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    Nitride LED with a schottky electrode penetrating a transparent electrode
    5.
    发明授权
    Nitride LED with a schottky electrode penetrating a transparent electrode 有权
    氮化物LED与肖特基电极穿透透明电极

    公开(公告)号：US08994054B2

    公开(公告)日：2015-03-31

    申请号：US13195926

    申请日：2011-08-02

    申请人： Eiji Muramoto ,  Shinya Nunoue ,  Toshiyuki Oka

    发明人： Eiji Muramoto ,  Shinya Nunoue ,  Toshiyuki Oka

    IPC分类号： H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/12 ,  H01L33/32

    CPC分类号： H01L33/38 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer. A shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer is same as a shape of the third electrode as viewed along the stacking direction.

    摘要翻译： 根据一个实施例，半导体发光器件包括层叠结构体，第一电极，第二电极，第三电极和第四电极。 层叠结构体包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极电连接到第一半导体层。 第二电极与第二半导体层形成欧姆接触。 第二电极对于从发光层发射的光是半透明的。 第三电极穿过第二电极并与第二电极电连接以与第二半导体层形成肖特基接触。 第三电极设置在第四电极和第二半导体层之间。 沿第一半导体层，发光层和第二半导体层的堆叠方向观察的第四电极的形状与沿着层叠方向观察的第三电极的形状相同。

    Semiconductor light emitting device
    6.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08610158B2

    公开(公告)日：2013-12-17

    申请号：US13165837

    申请日：2011-06-22

    申请人： Eiji Muramoto ,  Shinya Nunoue

    发明人： Eiji Muramoto ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light emitting device according to an embodiment includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer, and emitting light; a p-type semiconductor layer formed on the active layer; a p-electrode formed on the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic %; and an n-electrode formed on a second region of the n-type semiconductor layer.

    摘要翻译： 根据实施例的半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上并且发射光的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p电极，并且包括氧含量低于40原子％的第一导电氧化物层; 以及形成在n型半导体层的第二区域上的n电极。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20130092898A1

    公开(公告)日：2013-04-18

    申请号：US13705342

    申请日：2012-12-05

    申请人： Eiji Muramoto ,  Shinya Nunoue

    发明人： Eiji Muramoto ,  Shinya Nunoue

    IPC分类号： H01L33/04 ,  H01L33/00

    CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

    摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

    Semiconductor light-emitting device
    8.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US08648377B2

    公开(公告)日：2014-02-11

    申请号：US13705342

    申请日：2012-12-05

    申请人： Eiji Muramoto ,  Shinya Nunoue

    发明人： Eiji Muramoto ,  Shinya Nunoue

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

    摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

    摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

    Semiconductor light-emitting device
    9.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US08093608B2

    公开(公告)日：2012-01-10

    申请号：US12408806

    申请日：2009-03-23

    申请人： Eiji Muramoto ,  Shinya Nunoue

    发明人： Eiji Muramoto ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

    摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

    摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

    Semiconductor light emitting device including oxide layers with different oxygen contents
    10.
    发明授权
    Semiconductor light emitting device including oxide layers with different oxygen contents 有权
    半导体发光器件包括氧含量不同的氧化物层

    公开(公告)号：US08680566B2

    公开(公告)日：2014-03-25

    申请号：US13718618

    申请日：2012-12-18

    申请人： Eiji Muramoto ,  Shinya Nunoue

    发明人： Eiji Muramoto ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer.

    摘要翻译： 半导体发光器件包括n型半导体层，p型半导体层和形成在n型半导体层和p型半导体层之间的有源层，并且发射光。 该器件还包括与p型半导体层接触的p电极，并且包括氧含量低于40原子％的第一导电氧化物层和与第一导电氧化物层接触并具有较高的第二导电氧化物层的第二导电氧化物层 氧含量比第一导电氧化物层的氧含量高。 该器件还包括与n型半导体层电连接的n电极。