公开(公告)号：US20130143128A1

公开(公告)日：2013-06-06

申请号：US13816939

申请日：2011-08-24

申请人： Yasushi Mochida ,  Mitsuyasu Ueda ,  Kentaro Yoshida ,  Tomoharu Takeyama ,  Kazuhiro Goto

发明人： Yasushi Mochida ,  Mitsuyasu Ueda ,  Kentaro Yoshida ,  Tomoharu Takeyama ,  Kazuhiro Goto

IPC分类号： H01M10/0562 ,  H01M10/052

CPC分类号： H01M10/0561 ,  H01M4/131 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/0585 ,  H01M2300/0068 ,  H01M2300/0094 ,  Y10T29/49115

摘要： Provided are a nonaqueous-electrolyte battery in which short circuits between the positive- and negative-electrode layers can be suppressed with certainty and a method for producing the battery. A nonaqueous-electrolyte battery 100 includes a positive-electrode active-material layer 12 containing a Li-containing oxide; a negative-electrode active-material layer 22 on which deposition of Li metal can occur; and a sulfide-solid-electrolyte layer (SE layer) 3 disposed between these active-material layers 12 and 22. The SE layer 3 of the nonaqueous-electrolyte battery 100 includes a powder-formed layer 31 and a dense-film layer 32 formed on a surface of the powder-formed layer 31 by a vapor-phase process. In the nonaqueous-electrolyte battery 100, the powder-formed layer 31 is formed by a compression-molding process on a positive-electrode body including the positive-electrode active-material layer 12 and the dense-film layer 32 is then formed by a vapor-phase process on the positive-electrode body that is provided with the powder-formed layer 31 and serves as a substrate.

摘要翻译： 提供一种可以确定地抑制正电极层和负电极层之间的短路的非水电解质电池及其制造方法。 非水电解质电池100包括：含有Li的氧化物的正极活性物质层12; 可以发生Li金属沉积的负极活性物质层22; 以及设置在这些活性物质层12和22之间的硫化物 - 固体电解质层（SE层）3。非水电解质电池100的SE层3包括粉末形成层31和形成的致密膜层32 通过气相法在粉末形成层31的表面上。 在非水电解质电池100中，粉末形成层31通过在包含正极活性物质层12的正极体上的压缩成型工艺形成，然后通过以下方式形成致密膜层32： 在设置有粉末形成层31并作为基板的正极体上进行气相处理。

公开(公告)号：US08785051B2

公开(公告)日：2014-07-22

申请号：US13816939

申请日：2011-08-24

申请人： Yasushi Mochida ,  Mitsuyasu Ueda ,  Kentaro Yoshida ,  Tomoharu Takeyama ,  Kazuhiro Goto

发明人： Yasushi Mochida ,  Mitsuyasu Ueda ,  Kentaro Yoshida ,  Tomoharu Takeyama ,  Kazuhiro Goto

IPC分类号： H01M10/0561 ,  H01M10/0562 ,  H01M10/052 ,  H01M4/131

CPC分类号： H01M10/0561 ,  H01M4/131 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/0585 ,  H01M2300/0068 ,  H01M2300/0094 ,  Y10T29/49115

摘要： Provided are a nonaqueous-electrolyte battery in which short circuits between the positive- and negative-electrode layers can be suppressed with certainty and a method for producing the battery. A nonaqueous-electrolyte battery 100 includes a positive-electrode active-material layer 12 containing a Li-containing oxide; a negative-electrode active-material layer 22 on which deposition of Li metal can occur; and a sulfide-solid-electrolyte layer (SE layer) 3 disposed between these active-material layers 12 and 22. The SE layer 3 of the nonaqueous-electrolyte battery 100 includes a powder-formed layer 31 and a dense-film layer 32 formed on a surface of the powder-formed layer 31 by a vapor-phase process. In the nonaqueous-electrolyte battery 100, the powder-formed layer 31 is formed by a compression-molding process on a positive-electrode body including the positive-electrode active-material layer 12 and the dense-film layer 32 is then formed by a vapor-phase process on the positive-electrode body that is provided with the powder-formed layer 31 and serves as a substrate.

摘要翻译： 提供一种可以确定地抑制正电极层和负电极层之间的短路的非水电解质电池及其制造方法。 非水电解质电池100包括：含有Li的氧化物的正极活性物质层12; 可以发生Li金属沉积的负极活性物质层22; 以及设置在这些活性物质层12和22之间的硫化物 - 固体电解质层（SE层）3。非水电解质电池100的SE层3包括粉末形成层31和形成的致密膜层32 通过气相法在粉末形成层31的表面上。 在非水电解质电池100中，粉末形成层31通过在包含正极活性物质层12的正极体上的压缩成型工艺形成，然后通过以下方式形成致密膜层32： 在设置有粉末形成层31并作为基板的正极体上进行气相处理。

公开(公告)号：US09083057B2

公开(公告)日：2015-07-14

申请号：US13976152

申请日：2011-12-28

申请人： Kentaro Yoshida ,  Kazuhiro Goto ,  Ryoko Kanda ,  Tomoharu Takeyama

发明人： Kentaro Yoshida ,  Kazuhiro Goto ,  Ryoko Kanda ,  Tomoharu Takeyama

IPC分类号： H01M10/0562 ,  H01M10/052 ,  H01M10/0585 ,  H01M10/04

CPC分类号： H01M10/0562 ,  H01M10/04 ,  H01M10/052 ,  H01M10/0585 ,  H01M2300/0068 ,  Y02E60/122 ,  Y02P70/54

摘要： A positive-electrode body 1 is prepared that includes a positive-electrode active-material layer 12 including a powder-molded body, and a positive-electrode-side solid-electrolyte layer (PSE layer) 13 that is amorphous and formed on the positive-electrode active-material layer 12 by a vapor-phase process. A negative-electrode body 2 is prepared that includes a negative-electrode active-material layer 22 including a powder-molded body, and a negative-electrode-side solid-electrolyte layer (NSE layer) 23 that is amorphous and formed on the negative-electrode active-material layer 22 by a vapor-phase process. The positive-electrode body 1 and the negative-electrode body 2 are bonded together by subjecting the electrode bodies 1 and 2 being arranged such that the solid-electrolyte layers 13 and 23 of the electrode bodies 1 and 2 are in contact with each other, to a heat treatment under application of a pressure to crystallize the PSE layer 13 and the NSE layer 23.

摘要翻译： 准备正极体1，该正极体1包括具有粉末成型体的正极活性物质层12和非阳极形成的正极侧固体电解质层（PSE层）13 - 通过气相法电极活性物质层12。 制作负极体2，该负极体2具有由负极活性物质层22构成的负极活性物质层22和负极侧固体电解质层（NSE层）23，负极侧固体电解质层23是负极 - 通过气相法电极活性物质层22。 正极体1和负极体2通过使电极体1和2被布置成使得电极体1和2的固体电解质层13和23彼此接触而接合在一起， 在施加压力下使PSE层13和NSE层23结晶的热处理。

公开(公告)号：US20130302698A1

公开(公告)日：2013-11-14

申请号：US13980082

申请日：2012-01-18

申请人： Kazuhiro Goto ,  Takashi Uemura ,  Kentaro Yoshida ,  Tomoharu Takeyama ,  Ryoko Kanda

发明人： Kazuhiro Goto ,  Takashi Uemura ,  Kentaro Yoshida ,  Tomoharu Takeyama ,  Ryoko Kanda

IPC分类号： H01M4/485 ,  H01M4/583

CPC分类号： H01M4/485 ,  H01M4/131 ,  H01M4/583 ,  H01M4/625 ,  H01M10/0562 ,  H01M2220/20

摘要： Provided is a nonaqueous electrolyte battery that has a high capacity and a high volume power density and can have an enhanced charge-discharge cycle capability. The nonaqueous electrolyte battery includes a positive-electrode layer, a negative-electrode layer, and a solid-electrolyte layer disposed between these layers. The negative-electrode layer contains a powder of a negative-electrode active material and a powder of a solid electrolyte. In the negative-electrode active material, a charge-discharge volume change ratio is 1% or less and the powder has an average particle size of 8 μm or less. The solid-electrolyte layer is formed by a vapor-phase process. Examples of the negative-electrode active material having a charge-discharge volume change ratio of 1% or less include Li4Ti5O12 and non-graphitizable carbon.

摘要翻译： 提供具有高容量和高体积功率密度并且可以具有增强的充放电循环能力的非水电解质电池。 非水电解质电池包括正极层，负极层和设置在这些层之间的固体 - 电解质层。 负极层含有负极活性物质粉末和固体电解质粉末。 在负极活性物质中，充放电体积变化率为1％以下，粉末的平均粒径为8μm以下。 固体电解质层通过气相法形成。 充电 - 放电体积变化率为1％以下的负极活性物质的实例包括Li 4 Ti 5 O 12和不可石墨化碳。

公开(公告)号：US20130273438A1

公开(公告)日：2013-10-17

申请号：US13976152

申请日：2011-12-28

申请人： Kentaro Yoshida ,  Kazuhiro Goto ,  Ryoko Kanda ,  Tomoharu Takeyama

发明人： Kentaro Yoshida ,  Kazuhiro Goto ,  Ryoko Kanda ,  Tomoharu Takeyama

IPC分类号： H01M10/0562

CPC分类号： H01M10/0562 ,  H01M10/04 ,  H01M10/052 ,  H01M10/0585 ,  H01M2300/0068 ,  Y02E60/122 ,  Y02P70/54

摘要： A positive-electrode body 1 is prepared that includes a positive-electrode active-material layer 12 including a powder-molded body, and a positive-electrode-side solid-electrolyte layer (PSE layer) 13 that is amorphous and formed on the positive-electrode active-material layer 12 by a vapor-phase process. A negative-electrode body 2 is prepared that includes a negative-electrode active-material layer 22 including a powder-molded body, and a negative-electrode-side solid-electrolyte layer (NSE layer) 23 that is amorphous and formed on the negative-electrode active-material layer 22 by a vapor-phase process. The positive-electrode body 1 and the negative-electrode body 2 are bonded together by subjecting the electrode bodies 1 and 2 being arranged such that the solid-electrolyte layers 13 and 23 of the electrode bodies 1 and 2 are in contact with each other, to a heat treatment under application of a pressure to crystallize the PSE layer 13 and the NSE layer 23.

摘要翻译： 准备正极体1，该正极体1包括具有粉末成型体的正极活性物质层12和非阳极形成的正极侧固体电解质层（PSE层）13 - 通过气相法电极活性物质层12。 制作负极体2，该负极体2具有由负极活性物质层22构成的负极活性物质层22和负极侧固体电解质层（NSE层）23，负极侧固体电解质层23是负极 - 通过气相法电极活性物质层22。 正极体1和负极体2通过使电极体1和2被布置成使得电极体1和2的固体电解质层13和23彼此接触而接合在一起， 在施加压力下使PSE层13和NSE层23结晶的热处理。

公开(公告)号：US20100288191A1

公开(公告)日：2010-11-18

申请号：US12812679

申请日：2008-12-24

申请人： Tomoharu Takeyama

发明人： Tomoharu Takeyama

IPC分类号： C30B25/04 ,  C30B25/02

CPC分类号： C30B29/406 ,  C30B25/18

摘要： In a method of growing a gallium nitride crystal, the following steps are performed. First, a base substrate is prepared. Then, a first gallium nitride layer is grown on the base substrate. Thereafter, a second gallium nitride layer less brittle than the first gallium nitride layer is grown.

摘要翻译： 在生长氮化镓晶体的方法中，进行以下步骤。 首先，准备基材。 然后，在基底基板上生长第一氮化镓层。 此后，生长比第一氮化镓层更脆的第二氮化镓层。

公开(公告)号：US20110232564A1

公开(公告)日：2011-09-29

申请号：US13131989

申请日：2009-11-26

申请人： Tomoharu Takeyama

发明人： Tomoharu Takeyama

IPC分类号： C30B25/04 ,  C30B19/00 ,  C30B23/04 ,  C30B11/00

CPC分类号： H01L21/0237 ,  C30B25/04 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02658

摘要： In a method of growing GaN crystal in one aspect, the following steps are performed. An underlying substrate is prepared. Then, a mask layer having an opening portion and composed of SiO2 is formed on the underlying substrate. Then, GaN crystal is grown on the underlying substrate and the mask layer. The mask layer has surface roughness Rms not greater than 2 nm or a radius of curvature not smaller than 8 m. In a method of growing GaN crystal in one aspect, the following steps are performed. An underlying substrate is prepared. Then, using a resist, a mask layer having an opening portion is formed on the underlying substrate. Then, the underlying substrate and the mask layer are cleaned with an acid solution. Then, after of cleaning with an acid solution, the underlying substrate and the mask layer are cleaned with an organic solvent. Then, GaN crystal is grown on the underlying substrate and the mask layer.

摘要翻译： 在一方面生长GaN晶体的方法中，执行以下步骤。 制备底层基材。 然后，在底层基板上形成具有开口部并由SiO 2构成的掩模层。 然后，在下面的衬底和掩模层上生长GaN晶体。 掩模层的表面粗糙度Rms不大于2nm或曲率半径不小于8μm。 在一方面生长GaN晶体的方法中，执行以下步骤。 制备底层基材。 然后，使用抗蚀剂，在下面的基板上形成具有开口部的掩模层。 然后，用酸溶液清洗下面的基底和掩模层。 然后，用酸溶液清洗后，用有机溶剂清洗下面的基底和掩模层。 然后，在下面的衬底和掩模层上生长GaN晶体。