公开(公告)号：US20060137735A1

公开(公告)日：2006-06-29

申请号：US11296706

申请日：2005-12-08

申请人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Koji Satake

发明人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Koji Satake

IPC分类号： H01L31/00

CPC分类号： G02F1/133504 ,  G02F2202/16 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/054 ,  H01L31/056 ,  H01L31/076 ,  H01L2933/0091 ,  Y02E10/52 ,  Y02E10/548

摘要： A light scattering film having the structure which guides electrical signal to a desired position and scatters incident light and the surface of which is substantially flat, and a photoelectric device using the same. The light scattering film includes a medium made of transparent conductive material and a light scatterer embedded in the medium. The light scattering film realizes conductivity and the light-scattering characteristic by single component. It is not necessary to make the texture of a surface with concavity and convexity deliberately to achieve the light-scattering characteristic. Desirably, the surface is substantially flat. When a semiconductor layer is formed on the surface, the defects are suppressed because of the flatness of the surface. The photoelectric device having the light scattering film and the semiconductor device on the surface of the film can achieve high photoelectric conversion efficiency.

摘要翻译： 具有将电信号引导到所需位置并散射入射光并且其表面基本平坦的结构的光散射膜和使用该光散射膜的光电装置。 光散射膜包括由透明导电材料制成的介质和嵌入介质中的光散射体。 光散射膜通过单一成分实现导电性和光散射特性。 不必有意地使具有凹凸的表面的纹理实现光散射特性。 理想地，表面基本上是平的。 当在表面上形成半导体层时，由于表面的平坦度，缺陷被抑制。 具有光散射膜的光电器件和膜表面上的半导体器件可实现高的光电转换效率。

公开(公告)号：US08129611B2

公开(公告)日：2012-03-06

申请号：US11296706

申请日：2005-12-08

申请人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Koji Satake

发明人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Koji Satake

IPC分类号： H01L31/00

CPC分类号： G02F1/133504 ,  G02F2202/16 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/054 ,  H01L31/056 ,  H01L31/076 ,  H01L2933/0091 ,  Y02E10/52 ,  Y02E10/548

摘要： A light scattering film having the structure which guides electrical signal to a desired position and scatters incident light and the surface of which is substantially flat, and a photoelectric device using the same. The light scattering film includes a medium made of transparent conductive material and a light scatterer embedded in the medium. The light scattering film realizes conductivity and the light-scattering characteristic by single component. It is not necessary to make the texture of a surface with concavity and convexity deliberately to achieve the light-scattering characteristic. Desirably, the surface is substantially flat. When a semiconductor layer is formed on the surface, the defects are suppressed because of the flatness of the surface. The photoelectric device having the light scattering film and the semiconductor device on the surface of the film can achieve high photoelectric conversion efficiency.

摘要翻译： 具有将电信号引导到所需位置并散射入射光并且其表面基本平坦的结构的光散射膜和使用该光散射膜的光电装置。 光散射膜包括由透明导电材料制成的介质和嵌入介质中的光散射体。 光散射膜通过单一成分实现导电性和光散射特性。 不必有意地使具有凹凸的表面的纹理实现光散射特性。 理想地，表面基本上是平的。 当在表面上形成半导体层时，由于表面的平坦度，缺陷被抑制。 具有光散射膜的光电器件和膜表面上的半导体器件可实现高的光电转换效率。

公开(公告)号：US20060090790A1

公开(公告)日：2006-05-04

申请号：US11053667

申请日：2005-02-09

申请人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Koji Satake

发明人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Koji Satake

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/022425 ,  H01L31/02168 ,  H01L31/022466 ,  Y02E10/50

摘要： A photoelectric conversion device is composed of a substrate, a lower electrode layer formed to cover the substrate, and a first semiconductor layer formed on the lower electrode. The lower electrode layer includes a first matrix formed of transparent conductive material, and light scattering granules embedded within the first matrix.

摘要翻译： 光电转换装置由基板，形成为覆盖基板的下电极层和形成在下电极上的第一半导体层构成。 下电极层包括由透明导电材料形成的第一矩阵和嵌入在第一基体内的光散射颗粒。

公开(公告)号：US20100229935A1

公开(公告)日：2010-09-16

申请号：US12671868

申请日：2009-01-07

申请人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

发明人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

IPC分类号： H01L31/0224 ,  H01L31/04 ,  H01L31/028

CPC分类号： H01L31/022466 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L31/022483 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/0547 ,  H01L31/0687 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/544

摘要： The short-circuit current of a photovoltaic device is improved by optimizing the transparent conductive layer. A photovoltaic device comprising a first transparent electrode layer, an electric power generation layer, a second transparent electrode layer and a back electrode layer on a substrate, wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the light absorptance for the second transparent electrode layer in a wavelength region from not less than 600 nm to not more than 1,000 nm is not more than 1.5%. Also, a photovoltaic device wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the reflectance for light reflected at the second transparent electrode layer and the back electrode layer is not less than 91% in the wavelength region from not less than 600 nm to not more than 1,000 nm.

摘要翻译： 通过优化透明导电层来改善光伏器件的短路电流。 一种光电器件，包括在基板上的第一透明电极层，发电层，第二透明电极层和背面电极层，其中所述第二透明电极层的膜厚度不小于80nm且不大于 100nm，并且在不小于600nm至不大于1000nm的波长区域中的第二透明电极层的光吸收率不大于1.5％。 此外，第二透明电极层的膜厚为80nm以上且100nm以下的光电转换装置，第二透明电极层和背面电极层的反射率为91以上 在不小于600nm至不大于1000nm的波长区域中的％。

公开(公告)号：US20100116331A1

公开(公告)日：2010-05-13

申请号：US12526883

申请日：2008-02-08

申请人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Kengo Yamaguchi ,  Yuji Asahara ,  Saneyuki Goya

发明人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Kengo Yamaguchi ,  Yuji Asahara ,  Saneyuki Goya

IPC分类号： H01L31/00 ,  C23C14/34

CPC分类号： H01L31/076 ,  H01L31/0463 ,  Y02E10/548

摘要： A photovoltaic device and a process for producing the device that enables a higher level of performance to be achieved at low cost. The photovoltaic device includes at least two laminated photovoltaic layers, and an intermediate layer that is disposed between the two photovoltaic layers and connects the two photovoltaic layers electrically and optically, wherein the surface of the intermediate layer has a plasma-resistant protective layer.

摘要翻译： 光伏器件和用于制造能够以低成本实现更高水平的性能的器件的方法。 光伏器件包括至少两个层压的光伏层，以及中间层，其设置在两个光伏层之间并且电和光学地连接两个光伏层，其中中间层的表面具有耐等离子体保护层。

公开(公告)号：US20070221269A1

公开(公告)日：2007-09-27

申请号：US11585073

申请日：2006-10-24

申请人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

发明人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

IPC分类号： H01L31/00

CPC分类号： H01L31/056 ,  H01L31/0236 ,  Y02E10/52

摘要： The efficiency of a thin film Si solar battery is improved. Between a back face electrode and a transparent conductive film provided on a front face side of the back face electrode, a refractive index adjustment layer is interposed made from a material that has a lower refractive index than that of the transparent conductive film. For example when the transparent conductive film is GZO, SiO2 is interposed between the transparent conductive film and the back face electrode made from Ag. As a result light that penetrates into and is absorbed at the back face electrode is reduced, and the reflectivity of light at the back face electrode is improved.

摘要翻译： 提高薄膜Si太阳能电池的效率。 在背面电极和设置在背面电极的正面侧的透明导电膜之间，由折射率低于透明导电膜折射率的材料构成折射率调节层。 例如，当透明导电膜为GZO时，在透明导电膜和由Ag制成的背面电极之间插入SiO 2。 结果，在背面电极中渗入并被吸收的光减少，并且提高了背面电极的光的反射率。

公开(公告)号：US20120012168A1

公开(公告)日：2012-01-19

申请号：US13055131

申请日：2009-01-07

申请人： Saneyuki Goya ,  Yasuyuki Kobayashi ,  Satoshi Sakai

发明人： Saneyuki Goya ,  Yasuyuki Kobayashi ,  Satoshi Sakai

IPC分类号： H01L31/06

CPC分类号： H01L31/1812 ,  H01L31/046 ,  H01L31/076 ,  Y02E10/548

摘要： A film thickness configuration for a triple-junction photovoltaic device that is suitable for obtaining high conversion efficiency. The photovoltaic device comprises, on top of a substrate, a transparent electrode layer, a photovoltaic layer containing three stacked cell layers having pin junctions, and a back electrode layer, wherein an incident section cell layer provided on the light-incident side has an amorphous silicon i-layer having a thickness of not less than 100 nm and not more than 200 nm, a bottom section cell layer provided on the opposite side from the light-incident side has a crystalline silicon-germanium i-layer having a thickness of not less than 700 nm and not more than 1,600 nm, and the ratio of germanium atoms relative to the sum of germanium atoms and silicon atoms within the crystalline silicon-germanium i-layer is not less than 15 atomic % and not more than 25 atomic %, and a middle section cell layer provided between the incident section cell layer and the bottom section cell layer has a crystalline silicon i-layer having a thickness of not less than 1,000 nm and not more than 2,000 nm.

摘要翻译： 适用于获得高转换效率的三结光伏器件的膜厚结构。 光电器件在衬底的顶部上包​​括透明电极层，包含具有针状接合部的三个层叠电池层的光电转换层和背面电极层，其中设置在光入射侧的入射部电池层具有非晶形 具有不小于100nm且不大于200nm的厚度的硅i层，设置在与光入射侧相反的一侧的底部单元层具有不具有厚度的晶体硅 - 锗i层 小于700nm且不超过1600nm，并且锗原子相对于晶体硅锗锗层内的锗原子和硅原子之和的比例不小于15原子％且不超过25原子％ 并且设置在入射部分单元层和底部单元层之间的中间单元层具有厚度不小于1000nm且不大于2,000nm的晶体硅i层。

公开(公告)号：US20120006402A1

公开(公告)日：2012-01-12

申请号：US13256850

申请日：2010-05-06

申请人： Satoshi Sakai ,  Yasuyuki Kobayashi

发明人： Satoshi Sakai ,  Yasuyuki Kobayashi

IPC分类号： H01L31/0224 ,  H01L31/0232

CPC分类号： H01L31/022466 ,  H01L31/076 ,  Y02E10/548

摘要： A photovoltaic device comprising an intermediate contact layer for which the reflection characteristics have been optimized. The photovoltaic device (100) comprises a transparent electrode layer (2), which is disposed on a substrate (1) and has a textured structure on the surface opposite the substrate (1), a photovoltaic layer (3) composed of two electric power generation layers (91, 92), a back electrode layer (4), and an intermediate contact layer (5) disposed between the two electric power generation layers (91, 92), wherein the intermediate contact layer (5) comprises a titanium oxide film comprising mainly titanium oxide and a backside transparent conductive film comprising mainly a transparent conductive oxide, with the titanium oxide film disposed nearer the substrate (1), and the thickness of the titanium oxide film is a value that falls within a range defined as being from 65 to 110 nm inclusive when the thickness of the backside transparent conductive film is 5 nm, and similarly, from 65 to 95 nm inclusive when 10 nm, from 65 to 90 nm inclusive when 15 nm, from 60 to 85 nm inclusive when 20 nm, from 55 to 70 nm inclusive when 25 nm, and from 55 to 65 nm inclusive when 30 nm.

摘要翻译： 一种光电器件，包括反射特性已被优化的中间接触层。 光伏器件（100）包括透明电极层（2），其设置在基板（1）上并且在与基板（1）相对的表面上具有纹理结构;光电层（3），由两个电力 （91,92），背面电极层（4）和设置在两个发电层（91,92）之间的中间接触层（5），其中中间接触层（5）包括氧化钛 主要包含氧化钛的薄膜和主要由透明导电氧化物构成的背面透明导电膜，其中氧化钛膜设置在靠近基板（1）的位置，并且氧化钛膜的厚度是落在被定义为 当背面透明导电膜的厚度为5nm时为65〜110nm，同样地，当为10nm时为65nm〜95nm，当为15nm时为65〜90nm，如果为20nm则为60〜85nm nm，fr 当为25nm时为55〜70nm，当为30nm时为55〜65nm。

公开(公告)号：US20110019190A1

公开(公告)日：2011-01-27

申请号：US12934717

申请日：2009-07-02

申请人： Satoshi Sakai ,  Akemi Takano ,  Yasuyuki Kobayashi ,  Kengo Yamaguchi

发明人： Satoshi Sakai ,  Akemi Takano ,  Yasuyuki Kobayashi ,  Kengo Yamaguchi

IPC分类号： G01J4/00 ,  G01N21/21 ,  H01L31/18 ,  H01L31/02

CPC分类号： G01N21/9501 ,  G01N21/3563 ,  G01N21/55 ,  G01N21/8422 ,  G01R31/2831 ,  H01L31/1884 ,  Y10T29/53126

摘要： An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner. Provided is a resistivity testing device that includes a light emitting device that emits p-polarized emission light having a wavelength selected by a preliminarily performed test-condition selecting method toward a transparent conductive film, formed on a light-transmissive substrate conveyed along a manufacturing line, from a film-surface side at an incidence angle selected by the method; a light detecting device that detects reflected light reflected at the transparent conductive film; and an information processor that calculates an evaluation value related to the amount of light of the reflected light with respect to the wavelength on the basis of the intensity of the detected light and obtains a resistivity from the calculated evaluation value by using a correlation characteristic in which the evaluation value and the resistivity are associated with each other in advance.

摘要翻译： 目的是以非破坏性和非接触的方式高精度地有效地测量透明导电膜的电阻率。 提供了一种电阻率测试装置，其包括：发光装置，其将具有通过预先进行的测试条件选择方法选择的波长的p偏振发射光朝向透明导电膜形成，所述透明导电膜形成在沿着制造线传送的透光基板 从膜表面侧以该方法选择的入射角; 检测在透明导电膜上反射的反射光的光检测装置; 以及信息处理器，其基于所检测的光的强度来计算与所述反射光的相对于所述波长的光量相关的评价值，并且通过使用相关特性从所计算的评估值获得电阻率，其中， 评估值和电阻率预先相互关联。

公开(公告)号：US20100269897A1

公开(公告)日：2010-10-28

申请号：US12672868

申请日：2009-01-09

申请人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

发明人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/1884 ,  H01L31/022425 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/056 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： A photovoltaic device that exhibits improved light absorption properties for the electric power generation layer and a process for producing such a photovoltaic device are provided by optimizing the surface shape of the back surface structure. A photovoltaic device 100 comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, and the surface of the second transparent electrode layer 6 on the surface of the back electrode layer 4 has a fine uneven texture, for which the surface area magnification ratio relative to the projected surface area is not less than 10% and not more than 32%. Also, a photovoltaic device comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, the back electrode layer-side surface of the second transparent electrode layer 6 has a fine uneven texture, and the second transparent electrode layer 6 comprises needle-like crystals.

摘要翻译： 通过优化后表面结构的表面形状，提供了表现出对于发电层的改善的光吸收性能的光电器件和用于制造这种光伏器件的工艺。 光电器件100包括依次设置在基板1上的第一透明电极层2，发电层3，第二透明电极层6和背面电极层4，其中背面电极层4包括银的薄膜 并且背面电极层4的表面上的第二透明电极层6的表面具有微细的凹凸纹理，相对于投影表面积的表面积倍率不小于10％且不大于32 ％。 另外，包括依次设置在基板1上的第一透明电极层2，发电层3，第二透明电极层6和背面电极层4的光电器件，其中背面电极层4包括： 银，第二透明电极层6的背面电极层侧表面具有微细的凹凸纹理，第二透明电极层6包括针状晶体。