公开(公告)号：US20100116331A1

公开(公告)日：2010-05-13

申请号：US12526883

申请日：2008-02-08

申请人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Kengo Yamaguchi ,  Yuji Asahara ,  Saneyuki Goya

发明人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Kengo Yamaguchi ,  Yuji Asahara ,  Saneyuki Goya

IPC分类号： H01L31/00 ,  C23C14/34

CPC分类号： H01L31/076 ,  H01L31/0463 ,  Y02E10/548

摘要： A photovoltaic device and a process for producing the device that enables a higher level of performance to be achieved at low cost. The photovoltaic device includes at least two laminated photovoltaic layers, and an intermediate layer that is disposed between the two photovoltaic layers and connects the two photovoltaic layers electrically and optically, wherein the surface of the intermediate layer has a plasma-resistant protective layer.

摘要翻译： 光伏器件和用于制造能够以低成本实现更高水平的性能的器件的方法。 光伏器件包括至少两个层压的光伏层，以及中间层，其设置在两个光伏层之间并且电和光学地连接两个光伏层，其中中间层的表面具有耐等离子体保护层。

公开(公告)号：US08859887B2

公开(公告)日：2014-10-14

申请号：US12997418

申请日：2009-07-08

申请人： Shigenori Tsuruga ,  Kengo Yamaguchi ,  Saneyuki Goya ,  Satoshi Sakai

发明人： Shigenori Tsuruga ,  Kengo Yamaguchi ,  Saneyuki Goya ,  Satoshi Sakai

IPC分类号： H01L31/105 ,  H01L31/18 ,  H01L27/142 ,  H01L31/076 ,  H01L31/077

CPC分类号： H01L27/1423 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.

摘要翻译： 由于n层和背面透明电极层或中间接触层之间的接触特性的改善，显示出增加的开路电压和改善的填充因子的光电器件，以及用于制造光伏器件的工艺。 光伏器件包括具有层叠在衬底顶部上的p层，i层和n层的光电转换层，其中n层包括含氮的n层和形成在衬底上的界面处理层 含氮n层相对于基板的相对表面，含氮n层包含原子浓度为1％以上且20％以下的氮原子，结晶化比例不小于 0但小于3，并且界面处理层的结晶比不小于1且不大于6。

公开(公告)号：US20110100444A1

公开(公告)日：2011-05-05

申请号：US12997418

申请日：2009-07-08

申请人： Shigenori Tsuruga ,  Kengo Yamaguchi ,  Saneyuki Goya ,  Satoshi Sakai

发明人： Shigenori Tsuruga ,  Kengo Yamaguchi ,  Saneyuki Goya ,  Satoshi Sakai

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L27/1423 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.

摘要翻译： 由于n层和背面透明电极层或中间接触层之间的接触特性的改善，显示出增加的开路电压和改善的填充因子的光电器件，以及用于制造光伏器件的工艺。 光伏器件包括具有层叠在衬底顶部上的p层，i层和n层的光电转换层，其中n层包括含氮的n层和形成在衬底上的界面处理层 含氮n层相对于基板的相对表面，含氮n层包含原子浓度为1％以上且20％以下的氮原子，结晶化比例不小于 0但小于3，并且界面处理层的结晶比不小于1且不大于6。

公开(公告)号：US20100170565A1

公开(公告)日：2010-07-08

申请号：US12602255

申请日：2008-12-05

申请人： Shigenori Tsuruga ,  Kengo Yamaguchi ,  Saneyuki Goya ,  Satoshi Sakai

发明人： Shigenori Tsuruga ,  Kengo Yamaguchi ,  Saneyuki Goya ,  Satoshi Sakai

IPC分类号： H01L31/105 ,  H01L31/00 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/0262 ,  H01L31/028 ,  H01L31/076 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device having improved conversion efficiency as a result of an increase in the open-circuit voltage is provided. The photovoltaic device comprises a photovoltaic layer having a stacked p-layer, i-layer and n-layer, wherein the p-layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 25%, and the crystallization ratio of the p-layer is not less than 0 but less than 3. Alternatively, the n-layer may be a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, wherein the crystallization ratio of the n-layer is not less than 0 but less than 3. Alternatively, an interface layer may be formed at the interface between the p-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 30%. Alternatively, an interface layer may be formed at the interface between the n-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%.

摘要翻译： 提供了由于开路电压增加而具有提高的转换效率的光伏器件。 光电器件包括具有叠层的p层，i层和n层的光伏层，其中p层是含有原子浓度不小于1％且不大于1的氮原子的含氮层 25％，p层的结晶化比例不小于0但小于3.或者，n层可以是含有原子浓度不小于1％的氮原子的含氮层，而不是 大于20％，其中n层的结晶比不小于0但小于3.或者，可以在p层和i层之间的界面处形成界面层，其中界面层 是含有原子浓度为1％以上且30％以下的氮原子的含氮层。 或者，可以在n层和i层之间的界面处形成界面层，其中界面层是含有原子浓度不小于1％且不大于20的氮原子的含氮层 ％。

公开(公告)号：US20070221269A1

公开(公告)日：2007-09-27

申请号：US11585073

申请日：2006-10-24

申请人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

发明人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

IPC分类号： H01L31/00

CPC分类号： H01L31/056 ,  H01L31/0236 ,  Y02E10/52

摘要： The efficiency of a thin film Si solar battery is improved. Between a back face electrode and a transparent conductive film provided on a front face side of the back face electrode, a refractive index adjustment layer is interposed made from a material that has a lower refractive index than that of the transparent conductive film. For example when the transparent conductive film is GZO, SiO2 is interposed between the transparent conductive film and the back face electrode made from Ag. As a result light that penetrates into and is absorbed at the back face electrode is reduced, and the reflectivity of light at the back face electrode is improved.

摘要翻译： 提高薄膜Si太阳能电池的效率。 在背面电极和设置在背面电极的正面侧的透明导电膜之间，由折射率低于透明导电膜折射率的材料构成折射率调节层。 例如，当透明导电膜为GZO时，在透明导电膜和由Ag制成的背面电极之间插入SiO 2。 结果，在背面电极中渗入并被吸收的光减少，并且提高了背面电极的光的反射率。

公开(公告)号：US20120012168A1

公开(公告)日：2012-01-19

申请号：US13055131

申请日：2009-01-07

申请人： Saneyuki Goya ,  Yasuyuki Kobayashi ,  Satoshi Sakai

发明人： Saneyuki Goya ,  Yasuyuki Kobayashi ,  Satoshi Sakai

IPC分类号： H01L31/06

CPC分类号： H01L31/1812 ,  H01L31/046 ,  H01L31/076 ,  Y02E10/548

摘要： A film thickness configuration for a triple-junction photovoltaic device that is suitable for obtaining high conversion efficiency. The photovoltaic device comprises, on top of a substrate, a transparent electrode layer, a photovoltaic layer containing three stacked cell layers having pin junctions, and a back electrode layer, wherein an incident section cell layer provided on the light-incident side has an amorphous silicon i-layer having a thickness of not less than 100 nm and not more than 200 nm, a bottom section cell layer provided on the opposite side from the light-incident side has a crystalline silicon-germanium i-layer having a thickness of not less than 700 nm and not more than 1,600 nm, and the ratio of germanium atoms relative to the sum of germanium atoms and silicon atoms within the crystalline silicon-germanium i-layer is not less than 15 atomic % and not more than 25 atomic %, and a middle section cell layer provided between the incident section cell layer and the bottom section cell layer has a crystalline silicon i-layer having a thickness of not less than 1,000 nm and not more than 2,000 nm.

摘要翻译： 适用于获得高转换效率的三结光伏器件的膜厚结构。 光电器件在衬底的顶部上包​​括透明电极层，包含具有针状接合部的三个层叠电池层的光电转换层和背面电极层，其中设置在光入射侧的入射部电池层具有非晶形 具有不小于100nm且不大于200nm的厚度的硅i层，设置在与光入射侧相反的一侧的底部单元层具有不具有厚度的晶体硅 - 锗i层 小于700nm且不超过1600nm，并且锗原子相对于晶体硅锗锗层内的锗原子和硅原子之和的比例不小于15原子％且不超过25原子％ 并且设置在入射部分单元层和底部单元层之间的中间单元层具有厚度不小于1000nm且不大于2,000nm的晶体硅i层。

公开(公告)号：US20110126903A1

公开(公告)日：2011-06-02

申请号：US13056347

申请日：2009-08-11

申请人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Saneyuki Goya

发明人： Yasuyuki Kobayashi ,  Satoshi Sakai ,  Saneyuki Goya

IPC分类号： H01L31/0232 ,  H01L23/48 ,  H01L31/0236

CPC分类号： H01L31/1884 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device in which, by optimizing the structures for a substrate-side transparent electrode layer, an intermediate layer, and a back electrode layer, the extracted electrical current can be increased. The photovoltaic device includes at least a transparent electrode layer, a photovoltaic layer and a back electrode layer provided on a substrate, wherein the surface of the transparent electrode layer on which the photovoltaic layer is disposed includes a textured structure composed of ridges and a fine micro-texture provided on the surface of the ridges, the pitch of the textured structure is not less than 1.2 μm and not more than 1.6 μm, the height of the ridges is not less than 0.2 μm and not more than 0.8 μm, the pitch between peaks in the fine micro-texture is not less than 0.05 μm and not more than 0.14 μm, and the height of peaks is not less than 0.02 μm and not more than 0.1 μm.

摘要翻译： 通过优化基板侧透明电极层，中间层和背面电极层的结构，能够提高提取的电流的光电转换装置。 光电器件至少包括设置在基板上的透明电极层，光电转换层和背面电极层，其中配置有光电转换层的透明电极层的表面包括由脊组成的纹理结构和微细的微细结构 纹理设置在脊的表面上，纹理结构的间距不小于1.2μm且不大于1.6μm，脊的高度不小于0.2μm且不大于0.8μm，间距之间的间距 微细纹理中的峰不小于0.05μm且不大于0.14μm，峰的高度不小于0.02μm且不大于0.1μm。

公开(公告)号：US20100269897A1

公开(公告)日：2010-10-28

申请号：US12672868

申请日：2009-01-09

申请人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

发明人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/1884 ,  H01L31/022425 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/056 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： A photovoltaic device that exhibits improved light absorption properties for the electric power generation layer and a process for producing such a photovoltaic device are provided by optimizing the surface shape of the back surface structure. A photovoltaic device 100 comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, and the surface of the second transparent electrode layer 6 on the surface of the back electrode layer 4 has a fine uneven texture, for which the surface area magnification ratio relative to the projected surface area is not less than 10% and not more than 32%. Also, a photovoltaic device comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, the back electrode layer-side surface of the second transparent electrode layer 6 has a fine uneven texture, and the second transparent electrode layer 6 comprises needle-like crystals.

摘要翻译： 通过优化后表面结构的表面形状，提供了表现出对于发电层的改善的光吸收性能的光电器件和用于制造这种光伏器件的工艺。 光电器件100包括依次设置在基板1上的第一透明电极层2，发电层3，第二透明电极层6和背面电极层4，其中背面电极层4包括银的薄膜 并且背面电极层4的表面上的第二透明电极层6的表面具有微细的凹凸纹理，相对于投影表面积的表面积倍率不小于10％且不大于32 ％。 另外，包括依次设置在基板1上的第一透明电极层2，发电层3，第二透明电极层6和背面电极层4的光电器件，其中背面电极层4包括： 银，第二透明电极层6的背面电极层侧表面具有微细的凹凸纹理，第二透明电极层6包括针状晶体。

公开(公告)号：US20100229935A1

公开(公告)日：2010-09-16

申请号：US12671868

申请日：2009-01-07

申请人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

发明人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

IPC分类号： H01L31/0224 ,  H01L31/04 ,  H01L31/028

CPC分类号： H01L31/022466 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L31/022483 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/0547 ,  H01L31/0687 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/544

摘要： The short-circuit current of a photovoltaic device is improved by optimizing the transparent conductive layer. A photovoltaic device comprising a first transparent electrode layer, an electric power generation layer, a second transparent electrode layer and a back electrode layer on a substrate, wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the light absorptance for the second transparent electrode layer in a wavelength region from not less than 600 nm to not more than 1,000 nm is not more than 1.5%. Also, a photovoltaic device wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the reflectance for light reflected at the second transparent electrode layer and the back electrode layer is not less than 91% in the wavelength region from not less than 600 nm to not more than 1,000 nm.

摘要翻译： 通过优化透明导电层来改善光伏器件的短路电流。 一种光电器件，包括在基板上的第一透明电极层，发电层，第二透明电极层和背面电极层，其中所述第二透明电极层的膜厚度不小于80nm且不大于 100nm，并且在不小于600nm至不大于1000nm的波长区域中的第二透明电极层的光吸收率不大于1.5％。 此外，第二透明电极层的膜厚为80nm以上且100nm以下的光电转换装置，第二透明电极层和背面电极层的反射率为91以上 在不小于600nm至不大于1000nm的波长区域中的％。

公开(公告)号：US20110205556A1

公开(公告)日：2011-08-25

申请号：US13120295

申请日：2009-07-02

申请人： Satoshi Sakai ,  Youji Nakano ,  Yasuyuki Kobayashi ,  Kengo Yamaguchi ,  Akemi Takano

发明人： Satoshi Sakai ,  Youji Nakano ,  Yasuyuki Kobayashi ,  Kengo Yamaguchi ,  Akemi Takano

IPC分类号： G01B11/06

CPC分类号： G01B11/0625

摘要： A thin-film inspection apparatus includes a storage section (14) that stores at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum that are affected by a variation in the film thickness of at least one of a first transparent thin film and a second transparent thin film are each associated with the film thickness of the first transparent thin film and the film thickness of the second transparent thin film; a light irradiation section (11) that irradiates an inspection-target substrate (S) with white light through a transparent glass substrate; a light receiving section (12) that receives reflected light reflected from the inspection-target substrate (S); and an arithmetic section (15) that obtains measurement values of the feature values stored in the storage section (14) from a spectral reflectance spectrum generated based on the received reflected light and that calculates the film thickness of each of the first transparent thin film and the second transparent thin film by using the obtained measurement values of the feature values and the feature-value characteristics stored in the storage section (14).

摘要翻译： 薄膜检查装置包括存储部分（14），其存储至少两个特征值特性，其中从光谱反射光谱中的特征值中选择的至少两个特征值受到在 第一透明薄膜和第二透明薄膜中的至少一个分别与第一透明薄膜的膜厚度和第二透明薄膜的膜厚相关联; 通过透明玻璃基板将白色光照射到检查对象基板（S）的光照射部（11） 接收从所述检查对象基板（S）反射的反射光的受光部（12）。 以及算术部（15），其从基于所接收的反射光生成的光谱反射光谱获得存储在所述存储部（14）中的特征量的测量值，并且计算所述第一透明薄膜和 通过使用获得的存储在存储部分（14）中的特征值和特征值特性的测量值来确定第二透明薄膜。