公开(公告)号：US20170330862A1

公开(公告)日：2017-11-16

申请号：US15662764

申请日：2017-07-28

申请人： Yeong-Hwan CHOE ,  Tae-Joo HWANG ,  Tae-Hong MIN ,  Young-Kun JEE ,  Sang-Uk HAN

发明人： Yeong-Hwan CHOE ,  Tae-Joo HWANG ,  Tae-Hong MIN ,  Young-Kun JEE ,  Sang-Uk HAN

IPC分类号： H01L25/065 ,  H01L25/00 ,  H01L23/48 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/10 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/71 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/06156 ,  H01L2224/10125 ,  H01L2224/131 ,  H01L2224/14156 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75305 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/014

摘要： A semiconductor device includes at least first and second semiconductor chips stacked on each other along a first direction, at least one through-silicon-via (TSV) through at least the first semiconductor chip of the first and second semiconductor chips, a contact pad on the at least one TSV of the first semiconductor chip, the contact pad electrically connecting the TSV of the first semiconductor chip to the second semiconductor chip, and a plurality of dummy pads on the first semiconductor chip, the plurality of dummy pads being spaced apart from each other and from the contact pad along a second direction, and the dummy pads having same heights as the contact pads as measured between respective top and bottom surfaces along the first direction.

公开(公告)号：US20160064357A1

公开(公告)日：2016-03-03

申请号：US14825403

申请日：2015-08-13

申请人： Yeong-Hwan CHOE ,  Tae-Joo HWANG ,  Tae-Hong MIN ,  Young-Kun JEE ,  Sang-Uk HAN

发明人： Yeong-Hwan CHOE ,  Tae-Joo HWANG ,  Tae-Hong MIN ,  Young-Kun JEE ,  Sang-Uk HAN

IPC分类号： H01L25/065 ,  H01L23/48 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/10 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/71 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/06156 ,  H01L2224/10125 ,  H01L2224/131 ,  H01L2224/14156 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75305 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/014

摘要： A semiconductor device includes at least first and second semiconductor chips stacked on each other along a first direction, at least one silicon-through-via (TSV) through at least the first semiconductor chip of the first and second semiconductor chips, a contact pad on the at least one TSV of the first semiconductor chip, the contact pad electrically connecting the TSV of the first semiconductor chip to the second semiconductor chip, and a plurality of dummy pads on the first semiconductor chip, the plurality of dummy pads being spaced apart from each other and from the contact pad along a second direction, and the dummy pads having same heights as the contact pads as measured between respective top and bottom surfaces along the first direction.

摘要翻译： 半导体器件至少包括沿着第一方向彼此堆叠的第一和第二半导体芯片，至少一个硅通孔（TSV），至少通过第一和第二半导体芯片的第一半导体芯片，接触焊盘 所述第一半导体芯片的所述至少一个TSV，所述接触焊盘将所述第一半导体芯片的TSV电连接到所述第二半导体芯片，以及所述第一半导体芯片上的多个虚拟焊盘，所述多个虚拟焊盘与所述第一半导体芯片间隔开 彼此并且沿着第二方向从接触焊盘接合，并且虚拟焊盘具有与沿着第一方向在相应的顶部和底部表面之间测量的接触焊盘相同的高度。