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1.发明申请Method and system for reducing and monitoring precipitated defects on masking reticles 有权用于减少和监测掩蔽掩模版上沉淀的缺陷的方法和系统公开(公告)号：US20050191563A1
公开(公告)日：2005-09-01
申请号：US10787698
申请日：2004-02-26
申请人： Yi-Ming Dai , Ting-Yu Lin , Ho-Ku Lan , Li-Kong Turn , Heng-Hsin Liu , Louie Liu , Tony Wu , Chi-Hung Liao
发明人： Yi-Ming Dai , Ting-Yu Lin , Ho-Ku Lan , Li-Kong Turn , Heng-Hsin Liu , Louie Liu , Tony Wu , Chi-Hung Liao
CPC分类号： G03F7/70866 , G03F7/70741 , G03F7/70983
摘要： A method and system is disclosed for reducing and monitoring precipitated defects on mask reticles. A predetermined gas is provided into an environment surrounding the reticle assembly for reducing a formation of the precipitated defects around the mask reticle caused by photolithography under a light source having a small wavelength.
摘要翻译： 公开了用于减少和监测掩模掩模版上的沉淀缺陷的方法和系统。 预定的气体被提供到标线组件周围的环境中，用于减少在具有小波长的光源下通过光刻产生的掩模掩模版周围的沉淀缺陷的形成。
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公开(公告)号：US20060201848A1
公开(公告)日：2006-09-14
申请号：US11079617
申请日：2005-03-14
申请人： Ting-Yu Lin , Yi-Ming Dai , Chi-Hung Liao , Li-Kong Turn , Louie Liu , Ho-Ku Lan , Hsiang Liu
发明人： Ting-Yu Lin , Yi-Ming Dai , Chi-Hung Liao , Li-Kong Turn , Louie Liu , Ho-Ku Lan , Hsiang Liu
IPC分类号： B65D85/00
CPC分类号： G03F7/70741 , G03F1/66 , H01L21/67017 , H01L21/6735
摘要： In a container for transporting a reticle during a semiconductor manufacturing process, the reticle including a base made of isolating material and a metallic layer deposited onto a surface of the base, disclosed is a method for isolating and removing environmental contaminants which includes filling the container with inert gas, thereby purging the environmental contaminants, as well as inlet and outlet features to allow for the purging of clean inert gas and impurities.
摘要翻译： 在半导体制造过程中用于运输掩模版的容器中，包括由绝缘材料制成的基底和沉积在基底表面上的金属层的掩模版是一种用于分离和去除环境污染物的方法，其包括用容器 惰性气体，从而清除环境污染物，以及入口和出口特征，以便清洁惰性气体和杂质。
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公开(公告)号：US20050248754A1
公开(公告)日：2005-11-10
申请号：US10839625
申请日：2004-05-05
申请人： Chun-Sheng Wang , Louie Liu , Li-Kong Turn , Heng-Hsin Liu , Chi-Hung Liao , Hsin-Chun Chiang
发明人： Chun-Sheng Wang , Louie Liu , Li-Kong Turn , Heng-Hsin Liu , Chi-Hung Liao , Hsin-Chun Chiang
CPC分类号： G03F9/7088 , G03F9/7011
摘要： An improved photo resist coating and developing system comprising a track unit and a scanner unit is disclosed. The track unit has a coating unit for coating photo resist on a wafer. The scanner unit includes an enhanced wafer pre-alignment module, an expose stage, and a develop module. The enhanced wafer pre-alignment module is capable of performing wafer edge exposure (WEE) which conventionally required a separate WEE module as part of the track unit. By incorporating the WEE function into the wafer pre-alignment module of the scanner unit, the WEE module of the track unit is no longer required and duplication of wafer alignment and centering performed by the WEE module is eliminated.
摘要翻译： 公开了一种包括轨道单元和扫描器单元的改进的光致抗蚀剂涂覆和显影系统。 轨道单元具有用于在晶片上涂覆光致抗蚀剂的涂层单元。 扫描器单元包括增强的晶片预对准模块，曝光台和显影模块。 增强的晶片预校准模块能够执行通常需要单独的WEE模块作为轨道单元的一部分的晶片边缘曝光（WEE）。 通过将WEE功能结合到扫描器单元的晶片预对准模块中，轨道单元的WEE模块不再需要，并且消除了由WEE模块执行的晶片对准和定心的复制。
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公开(公告)号：US08048589B2
公开(公告)日：2011-11-01
申请号：US11192667
申请日：2005-07-30
申请人： Yi-Ming Dai , Chien-Hsing Wu , Chi-Hung Liao , Li-Kong Turn
发明人： Yi-Ming Dai , Chien-Hsing Wu , Chi-Hung Liao , Li-Kong Turn
IPC分类号： G03F1/00
摘要： A method for inspecting a phase shift photomask employs a phase shift photomask having an active pattern region. An optical property of the phase shift photomask is measured within the active pattern region, rather than, for example, a non-active pattern border region. By making the measurement within the active pattern region, performance of the phase shift mask may be properly assured. The method is particularly useful for inspecting attenuated phase shift photomasks to assure absence of side-lobes when photoexposing blanket photoresist layers.
摘要翻译： 用于检查相移光掩模的方法采用具有活性图案区域的相移光掩模。 在有源图案区域内测量相移光掩模的光学特性，而不是例如非活动图案边界区域。 通过在有源图案区域内进行测量，可以适当地确保相移掩模的性能。 该方法对于检查衰减的相移光掩模特别有用，以确保在曝光橡皮布光致抗蚀剂层时不存在侧裂片。
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公开(公告)号：US20070026320A1
公开(公告)日：2007-02-01
申请号：US11192667
申请日：2005-07-30
申请人： Yi-Ming Dai , Chien-Hsing Wu , Chi-Hung Liao , Li-Kong Turn
发明人： Yi-Ming Dai , Chien-Hsing Wu , Chi-Hung Liao , Li-Kong Turn
摘要： A method for inspecting a phase shift photomask employs a phase shift photomask having an active pattern region. An optical property of the phase shift photomask is measured within the active pattern region, rather than, for example, a non-active pattern border region. By making the measurement within the active pattern region, performance of the phase shift mask may be properly assured. The method is particularly useful for inspecting attenuated phase shift photomasks to assure absence of side-lobes when photoexposing blanket photoresist layers.
摘要翻译： 用于检查相移光掩模的方法采用具有活性图案区域的相移光掩模。 在有源图案区域内测量相移光掩模的光学特性，而不是例如非活动图案边界区域。 通过在有源图案区域内进行测量，可以适当地确保相移掩模的性能。 该方法对于检查衰减的相移光掩模特别有用，以确保在曝光橡皮布光致抗蚀剂层时不存在侧裂片。
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公开(公告)号：US20050185170A1
公开(公告)日：2005-08-25
申请号：US10786495
申请日：2004-02-25
申请人： Chun-Hung Lin , Louie Liu , Li-Kong Turn , Chi-Hung Liao , Ham-Ming Hsieh , Yi-Chang Sung , Hsin-Chun Chiang
发明人： Chun-Hung Lin , Louie Liu , Li-Kong Turn , Chi-Hung Liao , Ham-Ming Hsieh , Yi-Chang Sung , Hsin-Chun Chiang
CPC分类号： G03F9/7026 , G01N2021/8416 , G03F7/70533
摘要： A method and system for identifying a defocus wafer by mapping a topography of each wafer in a first wafer batch using a level sensor apparatus (100); calculating a focus spot deviation (402) from the data, the focus spot deviation (402) corresponding to a height by which a focus spot of a photo exposure module would be defocused by the topography; converting the focus spot deviation (402) to a corresponding wafer stage set point to which the photo exposure module is set, to focus the focus spot on each wafer in the wafer batch; and identifying a defocus wafer in the wafer batch, as a wafer having a topography that would defocus the focus spot, even when the photo exposure module is set to the wafer stage set point.
摘要翻译： 一种用于通过使用液位传感器装置（100）在第一晶片批次中映射每个晶片的形貌来识别散焦晶片的方法和系统; 从所述数据计算焦点偏差（402），所述焦点偏差（402）对应于所述照相曝光模块的焦点将由所述形貌散焦的高度; 将聚焦点偏差（402）转换为设置有曝光模块的对应的晶片台设定点，以将聚焦点聚焦在晶片批次中的每个晶片上; 并且即使当将曝光模块设置到晶片台设定点时，将晶片批中的散焦晶片识别为具有将焦点聚焦的形貌的晶片。
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公开(公告)号：US20050259272A1
公开(公告)日：2005-11-24
申请号：US10849455
申请日：2004-05-19
申请人： Chun-Sheng Wang , Yi-Chang Sung , Chi-Hung Liao , Li-Kong Turn , Louie Liu
发明人： Chun-Sheng Wang , Yi-Chang Sung , Chi-Hung Liao , Li-Kong Turn , Louie Liu
CPC分类号： G01B11/0608 , G03F9/7034 , G03F9/7069 , G03F9/7088
摘要： An improved method of wafer height mapping using a wafer level sensor eliminates or substantially minimizes the “spacing” in the wafer height mapping data usually caused by having an exposure field on a wafer whose width is less than the width of the measurement spot array of the wafer level sensor and also not being a multiple of the width of a single measurement spot. According to the improved method, the measurement spot array is first translated towards one edge of the exposure field and scanned. Then the measurement spot array is translated towards the other edge of the exposure field and scanned second time to map the area that was missed during the first mapping scan.
摘要翻译： 使用晶片级传感器的晶片高度映射的改进方法消除或基本上最小化晶片高度映射数据中的“间隔”，通常是由于在晶片上具有宽度小于其的测量点阵列的宽度的曝光场 晶圆级传感器，也不是单个测量点的宽度的倍数。 根据改进的方法，测量点阵列首先被转换成曝光场的一个边缘并进行扫描。 然后，测量点阵列朝向曝光区域的另一边缘平移，第二次扫描以映射第一次映射扫描期间遗漏的区域。
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公开(公告)号：US06975407B1
公开(公告)日：2005-12-13
申请号：US10849455
申请日：2004-05-19
申请人： Chun-Sheng Wang , Yi-Chang Sung , Chi-Hung Liao , Li-Kong Turn , Louie Liu
发明人： Chun-Sheng Wang , Yi-Chang Sung , Chi-Hung Liao , Li-Kong Turn , Louie Liu
CPC分类号： G01B11/0608 , G03F9/7034 , G03F9/7069 , G03F9/7088
摘要： An improved method of wafer height mapping using a wafer level sensor eliminates or substantially minimizes the “spacing” in the wafer height mapping data usually caused by having an exposure field on a wafer whose width is less than the width of the measurement spot array of the wafer level sensor and also not being a multiple of the width of a single measurement spot. According to the improved method, the measurement spot array is first translated towards one edge of the exposure field and scanned. Then the measurement spot array is translated towards the other edge of the exposure field and scanned second time to map the area that was missed during the first mapping scan.
摘要翻译： 使用晶片级传感器的晶片高度映射的改进方法消除或基本上最小化晶片高度映射数据中的“间隔”，通常是由于在晶片上具有宽度小于其的测量点阵列的宽度的曝光场 晶圆级传感器，也不是单个测量点的宽度的倍数。 根据改进的方法，测量点阵列首先被转换成曝光场的一个边缘并进行扫描。 然后，测量点阵列朝向曝光区域的另一边缘平移，第二次扫描以映射第一次映射扫描期间遗漏的区域。
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公开(公告)号：US07301604B2
公开(公告)日：2007-11-27
申请号：US10786495
申请日：2004-02-25
申请人： Chun-Hung Lin , Louie Liu , Li-Kong Turn , Chi-Hung Liao , Ham-Ming Hsieh , Yi-Chang Sung , Hsin-Chun Chiang
发明人： Chun-Hung Lin , Louie Liu , Li-Kong Turn , Chi-Hung Liao , Ham-Ming Hsieh , Yi-Chang Sung , Hsin-Chun Chiang
CPC分类号： G03F9/7026 , G01N2021/8416 , G03F7/70533
摘要： A method and system for identifying a defocus wafer by mapping a topography of each wafer in a first wafer batch using a level sensor apparatus (100); calculating a focus spot deviation (402) from the data, the focus spot deviation (402) corresponding to a height by which a focus spot of a photo exposure module would be defocused by the topography; converting the focus spot deviation (402) to a corresponding wafer stage set point to which the photo exposure module is set, to focus the focus spot on each wafer in the wafer batch; and identifying a defocus wafer in the wafer batch, as a wafer having a topography that would defocus the focus spot, even when the photo exposure module is set to the wafer stage set point.
摘要翻译： 一种用于通过使用液位传感器装置（100）在第一晶片批次中映射每个晶片的形貌来识别散焦晶片的方法和系统; 从所述数据计算焦点偏差（402），所述焦点偏差（402）对应于所述照相曝光模块的焦点将由所述形貌散焦的高度; 将聚焦点偏差（402）转换为设置有曝光模块的对应的晶片台设定点，以将聚焦点聚焦在晶片批次中的每个晶片上; 并且即使当将曝光模块设置到晶片台设定点时，将晶片批中的散焦晶片识别为具有将焦点聚焦的形貌的晶片。
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公开(公告)号：US20120264063A1
公开(公告)日：2012-10-18
申请号：US13086935
申请日：2011-04-14
申请人： Chih-Jen Yu , Chun-Hung Lin , Juin-Hung Lin , Hsueh-Yi Chung , Li-Kong Turn , Keh-Wen Chang
发明人： Chih-Jen Yu , Chun-Hung Lin , Juin-Hung Lin , Hsueh-Yi Chung , Li-Kong Turn , Keh-Wen Chang
CPC分类号： G06F17/50 , G03F7/705 , G03F7/70558 , G03F7/70625
摘要： A method including providing a present wafer to be processed by a photolithography tool, selecting a processed wafer having a past chip design from a plurality of processed wafers, the processed wafer being previously processed by the photolithography tool, selecting a plurality of critical dimension (CD) data points extracted from a plurality of fields on the processed wafer, modeling the plurality of CD data points with a function relating CD to position on the processed wafer, creating a field layout on the present wafer for a new chip design, creating an initial exposure dose map for the new chip design using the function and the field layout, and controlling the exposure of the photolithography tool according to the initial exposure dose map to form the new chip design on the present wafer.
摘要翻译： 一种方法，包括提供将由光刻工具处理的当前晶片，从多个经处理的晶片中选择具有过去芯片设计的处理晶片，处理的晶片由光刻工具预先处理，选择多个临界尺寸（CD ）数据点，其处理晶片上的多个场中提取的数据点，以与CD相关的功能对处理的晶片上的位置对多个CD数据点进行建模，在当前晶片上创建用于新芯片设计的场布局， 使用功能和现场布局的新芯片设计的曝光剂量图，并根据初始曝光剂量图控制光刻工具的曝光，以在当前晶片上形成新的芯片设计。
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