Thin-film transistor
    1.
    发明授权
    Thin-film transistor 有权
    薄膜晶体管

    公开(公告)号:US08134144B2

    公开(公告)日:2012-03-13

    申请号:US11317746

    申请日:2005-12-23

    IPC分类号: H01L51/30

    摘要: There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bottom-gate thin-film transistor, as an overcoat or top layer, improves the carrier mobility and current on/off ratio of the thin film transistor. Also provided is the thin-film transistor produced utilizing this process and/or composition.

    摘要翻译: 本文提供了包含分散在选自聚硅氧烷,聚倍半硅氧烷及其混合物的聚合物中的无机纳米粒子的性能增强组合物。 当作为外涂层或顶层施加到诸如底栅薄膜晶体管的薄膜晶体管时,该组成提高了薄膜晶体管的载流子迁移率和电流导通/截止比。 还提供了利用该方法和/或组合物制造的薄膜晶体管。

    Ethynylene acene polymers
    8.
    发明授权
    Ethynylene acene polymers 有权
    乙炔丙烯聚合物

    公开(公告)号:US07795373B2

    公开(公告)日:2010-09-14

    申请号:US11399091

    申请日:2006-04-06

    IPC分类号: C08G75/00 C08G65/00

    摘要: A polymer of Formula or structure (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteratom containing group, or a halogen; Ar and Ar′ represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.

    摘要翻译: 式(I)的聚合物,其中R 1和R 2中的至少一个是合适的烃,氢,含杂原子的基团或卤素; Ar和Ar'表示芳族部分; x,y,a,b,c,d,e,f和g分别表示基团或环的数目; n表示重复单元的数量。

    Polythiophenes and devices thereof
    9.
    发明授权
    Polythiophenes and devices thereof 有权
    聚噻吩及其装置

    公开(公告)号:US07781564B2

    公开(公告)日:2010-08-24

    申请号:US11565751

    申请日:2006-12-01

    IPC分类号: C08G75/06 H01L35/24 H01L51/40

    摘要: A polythiophene wherein the monomer segments thereof contain wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.

    摘要翻译: 聚噻吩,其中单体链段含有其中A是侧链; B是氢或侧链; 和D是二价键,其中单体链段中的A取代的亚噻吩基单元(I)的数目为约1至约10,B-取代的亚噻吩基单元(II)的数目为0至约5, 并且二价键D的数目为0或1。