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    INTEGRATED CIRCUIT SYSTEM WITH HIGH VOLTAGE TRANSISTOR AND METHOD OF MANUFACTURE THEREOF
    5.
    发明申请
    INTEGRATED CIRCUIT SYSTEM WITH HIGH VOLTAGE TRANSISTOR AND METHOD OF MANUFACTURE THEREOF 有权
    具有高压晶体管的集成电路系统及其制造方法

    公开(公告)号：US20100320529A1

    公开(公告)日：2010-12-23

    申请号：US12488451

    申请日：2009-06-19

    申请人： Yemin Dong ,  Purakh Raj Verma ,  Xin Zou ,  Chao Cheng ,  Shao-fu Sanford Chu

    发明人： Yemin Dong ,  Purakh Raj Verma ,  Xin Zou ,  Chao Cheng ,  Shao-fu Sanford Chu

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L21/823878 ,  H01L29/1041 ,  H01L29/4238

    摘要： A method of manufacture of an integrated circuit system includes: providing a semiconductor substrate having an active region, implanted with impurities of a first type at a first concentration; forming an isolation region around the active region; forming a parasitic transistor by applying a gate electrode, implanted with impurities of a second type at a second concentration, over the active region and the isolation region; and applying an isolation edge implant, with the impurities of the first type at a third concentration greater than or equal to the second concentration, for suppressing the parasitic transistor.

    摘要翻译： 一种集成电路系统的制造方法，包括：提供具有活性区域的半导体衬底，以第一浓度注入第一类型的杂质; 在活性区周围形成隔离区; 通过在有源区域和隔离区域上施加注入第二种类型的杂质的第二种浓度的栅电极来形成寄生晶体管; 以及施加隔离边缘注入，其中第一类型的杂质具有大于或等于第二浓度的第三浓度，用于抑制寄生晶体管。

    Double polysilicon bipolar transistor and method of manufacture therefor
    8.
    发明授权
    Double polysilicon bipolar transistor and method of manufacture therefor 有权
    双晶硅双极晶体管及其制造方法

    公开(公告)号：US06936519B2

    公开(公告)日：2005-08-30

    申请号：US10224111

    申请日：2002-08-19

    申请人： Purakh Raj Verma ,  Shao-fu Sanford Chu

    发明人： Purakh Raj Verma ,  Shao-fu Sanford Chu

    IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/732 ,  H01L29/737 ,  H01L21/8222

    CPC分类号： H01L29/66287 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/732 ,  H01L29/7375

    摘要： A bipolar transistor, and manufacturing method therefor, with a substrate having a collector region and a base structure provided thereon. An emitter structure is formed over the base structure and an extrinsic base structure is formed over the base structure and over the collector region beside and spaced from the emitter structure. A dielectric layer is deposited over the substrate and connections are formed to the extrinsic base structure, the emitter structure and the collector region.

    摘要翻译： 一种双极型晶体管及其制造方法，其上具有集电极区域和基极结构的基板。 在基底结构上形成发射极结构，并且在基极结构之上形成外部基极结构，并且在发射极结构旁边和间隔开的集电极区上方形成发射极结构。 电介质层沉积在衬底上，并且连接被形成为非本征基极结构，发射极结构和集电极区。

    Double polysilicon bipolar transistor
    9.
    发明授权
    Double polysilicon bipolar transistor 有权
    双晶硅双极晶体管

    公开(公告)号：US07268412B2

    公开(公告)日：2007-09-11

    申请号：US11057259

    申请日：2005-02-12

    申请人： Purakh Raj Verma ,  Shao-fu Sanford Chu

    发明人： Purakh Raj Verma ,  Shao-fu Sanford Chu

    IPC分类号： H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

    CPC分类号： H01L29/66287 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/732 ,  H01L29/7375

    摘要： A bipolar transistor with a substrate having a collector region and a base structure provided thereon. An emitter structure is formed over the base structure and an extrinsic base structure is formed over the base structure and over the collector region beside and spaced from the emitter structure. A dielectric layer is deposited over the substrate and connections are formed to the extrinsic base structure, the emitter structure and the collector region.

    摘要翻译： 一种双极晶体管，其具有设置在其上的集电极区域和基极结构的衬底。 在基底结构上形成发射极结构，并且在基极结构之上形成外部基极结构，并且在发射极结构旁边和间隔开的集电极区上方形成发射极结构。 电介质层沉积在衬底上，并且连接被形成为非本征基极结构，发射极结构和集电极区。

    Self-aligned lateral heterojunction bipolar transistor
    10.
    发明授权
    Self-aligned lateral heterojunction bipolar transistor 有权
    自对准横向异质结双极晶体管

    公开(公告)号：US07238971B2

    公开(公告)日：2007-07-03

    申请号：US11123748

    申请日：2005-05-04

    申请人： Jian Xun Li ,  Lap Chan ,  Purakh Raj Verma ,  Jia Zhen Zheng ,  Shao-fu Sanford Chu

    发明人： Jian Xun Li ,  Lap Chan ,  Purakh Raj Verma ,  Jia Zhen Zheng ,  Shao-fu Sanford Chu

    IPC分类号： H01L29/732

    CPC分类号： H01L29/66242 ,  H01L29/737

    摘要： A lateral heterojunction bipolar transistor (HBT) comprising a semiconductor substrate having having a first insulating layer over the semiconductor substrate. A base trench is formed in a first silicon layer over the first insulating layer to form a collector layer over an exposed portion of the semiconductor substrate and an emitter layer over the first insulating layer. A semiconductive layer is formed on the sidewalls of the base trench to form a collector structure in contact with the collector layer and an emitter structure in contact with the emitter layer. A base structure is formed in the base trench. A plurality of connections is formed through an interlevel dielectric layer to the collector layer, the emitter layer, and the base structure. The base structure preferably is a compound semiconductive material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.

    摘要翻译： 一种横向异质结双极晶体管（HBT），包括在半导体衬底上具有第一绝缘层的半导体衬底。 基底沟槽形成在第一绝缘层上的第一硅层中，以在半导体衬底的暴露部分和第一绝缘层上的发射极层之上形成集电极层。 半导体层形成在基底沟槽的侧壁上，以形成与集电极层接触的集电极结构和与发射极层接触的发射极结构。 基底结构形成在基底沟槽中。 通过层间电介质层到集电极层，发射极层和基底结构形成多个连接。 基底结构优选是硅的化合物半导体材料和硅 - 锗，硅 - 锗 - 碳及其组合中的至少一种。