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公开(公告)号：US09000201B2
公开(公告)日：2015-04-07
申请号：US13582700
申请日：2011-03-03
摘要： Disclosed are effective and simple adsorbents and methods of using the adsorbents for removing metal impurities generated during storage, transportation and supply of organometallic compounds. The disclosed adsorbents and methods provide for the easy and effective removal of the metallic impurities or compounds generated from decomposition of the organometallic compound during its transportation, storage, and supply. Namely, the disclosed adsorbents and methods permit the stable supply of a high purity organometallic compound desired in the semiconductor and photovoltaic cell.
摘要翻译： 公开了有效和简单的吸附剂和使用吸附剂去除在储存，运输和供应有机金属化合物期间产生的金属杂质的方法。 所公开的吸附剂和方法提供了容易且有效地除去在其运输，储存和供应期间由有机金属化合物分解产生的金属杂质或化合物。 也就是说，所公开的吸附剂和方法允许在半导体和光伏电池中稳定地供应所需的高纯度有机金属化合物。
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公开(公告)号：US20130066094A1
公开(公告)日：2013-03-14
申请号：US13582700
申请日：2011-03-03
IPC分类号： C07F3/06
摘要： Disclosed are effective and simple adsorbents and methods of using the adsorbents for removing metal impurities generated during storage, transportation and supply of organometallic compounds. The disclosed adsorbents and methods provide for the easy and effective removal of the metallic impurities or compounds generated from decomposition of the organometallic compound during its transportation, storage, and supply. Namely, the disclosed adsorbents and methods permit the stable supply of a high purity organometallic compound desired in the semiconductor and photovoltaic cell.
摘要翻译： 公开了有效和简单的吸附剂和使用吸附剂去除在储存，运输和供应有机金属化合物期间产生的金属杂质的方法。 所公开的吸附剂和方法提供了容易且有效地除去在其运输，储存和供应期间由有机金属化合物分解产生的金属杂质或化合物。 也就是说，所公开的吸附剂和方法允许在半导体和光伏电池中稳定地供应所需的高纯度有机金属化合物。
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公开(公告)号：US08348248B2
公开(公告)日：2013-01-08
申请号：US12721441
申请日：2010-03-10
IPC分类号： B01F3/04
CPC分类号： H01L21/02 , C23C16/4482 , C23C16/52 , Y10T137/0318
摘要： Embodiments of the invention generally provide apparatus and methods for vaporizing liquid precursors. In one embodiment, a bubbling system for supplying a vapor of liquid precursor is provided including a gas flow conduit having a first end and a second end, a nozzle structure connected to the second end of the gas flow conduit, and comprising one or more perforated conduits fluidly coupled with the second end of the gas flow conduit, and a plate disposed around the gas flow conduit and in a spaced relationship from the nozzle structure, wherein both the one or more perforated conduits and the plate extend radially from an axis of the gas flow conduit.
摘要翻译： 本发明的实施方案通常提供用于蒸发液体前体的装置和方法。 在一个实施例中，提供了用于供应液体前体蒸气的鼓泡系统，其包括具有第一端和第二端的气体流动管道，连接到气体流动管道的第二端的喷嘴结构，并且包括一个或多个穿孔 与气体流动管道的第二端流体耦合的导管，以及围绕气体流动导管设置并且与喷嘴结构间隔的关系的板，其中一个或多个穿孔导管和板沿着 气流管道。
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公开(公告)号：US08613976B2
公开(公告)日：2013-12-24
申请号：US13547876
申请日：2012-07-12
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02219 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.
摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤：将基底提供到反应室中; 向所述反应室中注入至少一种含硅化合物，其中所述至少一种含硅化合物是双（二乙基氨基）硅烷; 将氧气注入反应室和至少一种其它选自臭氧和水的含O气体; 在反应室内通过化学气相沉积在低于400℃的温度下使至少一种含硅化合物和至少一种含氧气体反应，以获得沉积在基底上的氧化硅膜。
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公开(公告)号：US20120276292A1
公开(公告)日：2012-11-01
申请号：US13547876
申请日：2012-07-12
IPC分类号： C23C16/40
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02219 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.
摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤：将基底提供到反应室中; 向所述反应室中注入至少一种含硅化合物，其中所述至少一种含硅化合物是双（二乙基氨基）硅烷; 将氧气注入反应室和至少一种其它选自臭氧和水的含O气体; 在反应室内通过化学气相沉积在低于400℃的温度下使至少一种含硅化合物和至少一种含氧气体反应，以获得沉积在基底上的氧化硅膜。
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6.发明申请Method for producing silicon nitride films and process for fabricating semiconductor devices using said method 失效用于制造氮化硅膜的方法和使用所述方法制造半导体器件的工艺公开(公告)号：US20050158983A1
公开(公告)日：2005-07-21
申请号：US11020712
申请日：2004-12-23
IPC分类号： C23C16/34 , H01L21/318 , H01L21/4763
CPC分类号： C23C16/345 , H01L21/3185
摘要： Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH2Cl2, SiCl4, Si2Cl6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH3NH2) and ammonia (NH3) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).
摘要翻译： 在LPCVD工具中，在安装在船上的硅晶片上形成硅氮化物膜，该硅源通过馈送硅源（SiH 2 2 Cl 2 Si 2 Si 3 S 2， >，Si 2 C 6 C 6等），并将一甲胺（CH 3 N 2 NH 2）的混合气体进料， / NH 3）和氨（NH 3 N 3）作为来自注射器的氮源。 通过将这种单甲胺添加到用于薄膜生产的源物质中，即使在低温（450-600℃）下也可以提供改进的膜质量和改善的泄漏特性。
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公开(公告)号：US06852187B2
公开(公告)日：2005-02-08
申请号：US10178359
申请日：2002-06-25
IPC分类号： H01L21/762 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/336 , H01L27/12 , H01L29/786 , B32B31/00
CPC分类号： H01L21/67092 , Y10S156/937 , Y10T83/364 , Y10T156/1137 , Y10T156/19 , Y10T156/1906 , Y10T156/1939
摘要： This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a first nozzle which forms a jet with a large width and a second nozzle which forms a jet with a small width. When the outer portion of a bonded substrate stack is to be separated, a jet formed by the first nozzle is used. After that, when a portion inside the outer portion is to be separated, a jet formed by the second nozzle is used.
摘要翻译： 本发明是为了适当地分离键合衬底叠层而不管键合衬底叠层等中的某些变形。 这种分离装置包括形成大宽度射流的第一喷嘴和形成小宽度的射流的第二喷嘴。 当键合衬底叠层的外部部分被分离时，使用由第一喷嘴形成的射流。 此后，当外部部分内的部分被分离时，使用由第二喷嘴形成的射流。
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公开(公告)号：US06712288B2
公开(公告)日：2004-03-30
申请号：US09930137
申请日：2001-08-16
IPC分类号： B05B108
CPC分类号： H01L21/67092
摘要： This invention is to improve the reproducibility and yield in separating a bonded substrate stack. A bonded substrate stack having a porous layer inside is held by substrate holding portions 105 and 106, and a fluid is injected from a nozzle to the porous layer of the bonded substrate stack, thereby separating the bonded substrate stack at the porous layer. The variation in pressure of the fluid is suppressed within a predetermined range by a servo-driven pump.
摘要翻译： 本发明是为了提高分离键合衬底叠层的再现性和产率。 具有内部多孔层的键合衬底叠层由衬底保持部分105和106保持，并且将流体从喷嘴注入到键合衬底叠层的多孔层，从而在多孔层处分离键合衬底叠层。 通过伺服驱动泵将流体的压力变化抑制在预定范围内。
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9.发明授权Composite member separating method, thin film manufacturing method, and composite member separating apparatus 失效复合构件分离方法，薄膜制造方法和复合构件分离装置公开(公告)号：US06653205B2
公开(公告)日：2003-11-25
申请号：US09730560
申请日：2000-12-07
IPC分类号： H01L2146
CPC分类号： H01L21/67092 , H01L21/76259 , Y10T156/1972
摘要： This invention relates to a composite member separating method in which a first member (1) having a separation layer (4) and a transfer layer (5) on the separation layer (4) is bonded to a second member (2) is separated at a position different from the bonding interface between the first member (1) and the second member (2), the method comprising the steps of, applying a force asymmetric with respect to the interface to the end portion of the composite member to form a crack (7A) that runs from the surface of the first member (1) to the separation layer (4) through the transfer layer (5), and then, growing the crack is grown along the separation layer (4) to completely separate the composite member.
摘要翻译： 本发明涉及一种复合构件分离方法，其中在分离层（4）上具有分离层（4）和转印层（5）的第一构件（1）与第二构件（2）结合在一起，分离在 与第一构件（1）和第二构件（2）之间的接合界面不同的位置，该方法包括以下步骤：将相对于界面的不对称力施加到复合构件的端部以形成裂纹 （7A），其通过所述转印层（5）从所述第一构件（1）的表面延伸到所述分离层（4），然后沿着所述分离层（4）生长所述裂纹以使所述复合构件完全分离。
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公开(公告)号：US06609553B2
公开(公告)日：2003-08-26
申请号：US10175004
申请日：2002-06-20
IPC分类号： B32B3500
CPC分类号： H01L21/67092 , Y10S156/942 , Y10T29/49821 , Y10T83/364 , Y10T156/1121 , Y10T156/1126 , Y10T156/1374 , Y10T156/1922 , Y10T156/1939 , Y10T156/1978
摘要： This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous layer (101b) while rotating the bonded substrate stack (101) to partially separate the bonded substrate stack (101) while leaving the central portion of the porous layer (101b) as an unseparated region. In the second process, the jet is ejected to the porous layer (101b) while rotation of the bonded substrate stack (101) is stopped. A force is applied to the unseparated region from a predetermined direction to completely separate the bonded substrate stack (101). Also, the first region (peripheral portion) and second region (central portion) of the bonded substrate stack (101) having the porous layer (101b) are separated using a jet and ultrasonic wave, respectively. More specifically, the first region is separated by a jet ejected from a nozzle (102) while rotating the bonded substrate stack (101). On the other hand, the second region is separated by an ultrasonic wave generated by an ultrasonic vibrator (1203).
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