摘要:
A clock signal duty correction circuit includes: a first transition timing control unit configured to generate a first control signal for controlling a rising timing of a duty correction clock signal by using a clock signal; a second transition timing control unit configured to generate a second control signal for varying a falling timing of the duty correction clock signal by using the clock signal according to a code signal; and a differential buffer unit configured to generate the duty correction clock signal, whose rising time or falling time is adjusted, in response to the first control signal and the second control signal.
摘要:
An internal control signal regulation circuit includes a programming test unit configured to detect an internal control signal in response to an external control signal and generate a selection signal, test codes and a programming enable signal; and a code processing unit configured to receive the test codes or programming codes in response to the selection signal and regulate the internal control signal.
摘要:
An internal control signal regulation circuit includes a programming test unit configured to detect an internal control signal in response to an external control signal and generate a selection signal, test codes and a programming enable signal; and a code processing unit configured to receive the test codes or programming codes in response to the selection signal and regulate the internal control signal.
摘要:
A clock generating circuit of a semiconductor memory apparatus includes a phase splitter that delays a clock to generate a delayed clock and inverts the clock to generate an inverted clock, and a clock buffer that buffers the delayed clock and the inverted clock and outputs a rising clock and a falling clock.
摘要:
A receiver circuit is capable of improving its operating characteristics. The receiver circuit includes a variable converter configured to output off-set control voltages in a first output range in a first operation mode and output the off-set control voltages in a second output range in a second operation mode according to a test mode activation signal, and a sense amplifier configured to sense input data based on a sensitivity, wherein the sensitivity is controlled by the off-set control voltages.
摘要:
A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
摘要:
An on-die termination circuit includes a reference period signal generation circuit that generates a reference period signal according to a level of a reference voltage, a first period signal generation circuit that generates a first period signal according to a voltage level of a pad, a period comparison circuit that compares a period of the first period signal with a period of the reference period signal and count a plurality of driving signals, and a driver circuit that drives the pad in response to the plurality of driving signals.
摘要:
A duty cycle correction apparatus includes a fixed delay unit configured to set a fixed delay time to a DLL clock signal and generate a delay rising clock signal; a variable delay unit configured to delay the DLL clock signal in response to a control signal and generate a delay falling clock signal; a duty cycle correction unit configured to generate a correction rising clock signal and a correction falling clock signal that are toggled in conformity with edge timing of the delay rising clock signal and the delay falling clock signal; and a delay control unit configured to detect duty cycles of the correction rising clock signal and the correction falling clock signal and generate the control signal.
摘要:
A semiconductor integrated circuit comprises a PLL (Phase Locked Loop (PLL) circuit configured to generate a control voltage in response to a frequency of a reference clock signal, and to generate a PLL clock signal having a frequency that corresponds to a level of the control voltage, and a voltage controlled oscillator configured to oscillate an output clock signal in response to the PLL clock signal, and to allow the PLL clock signal to have a frequency that corresponds to a level of the control voltage.
摘要:
A duty cycle correction circuit includes a signal generating unit including a first signal generating unit coupled to a power supply voltage terminal and configured to output a complementary output signal of an output signal in response to a clock signal, and a second signal generating unit coupled to the power supply voltage terminal and configured to output the output signal in response to a complementary clock signal of the clock signal; a variable resistor unit coupled between the first and second signal generating units configured to vary an amount of current flowing into the signal generating unit according to a duty correction control signal, the duty correction control signal having a voltage level determined based on a voltage level of the output signal; and a current source coupled between the variable resistor unit and a ground voltage terminal configured to supply current to the signal generating unit.