摘要:
A receiver circuit is capable of improving its operating characteristics. The receiver circuit includes a variable converter configured to output off-set control voltages in a first output range in a first operation mode and output the off-set control voltages in a second output range in a second operation mode according to a test mode activation signal, and a sense amplifier configured to sense input data based on a sensitivity, wherein the sensitivity is controlled by the off-set control voltages.
摘要:
A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
摘要:
An on-die termination circuit includes a reference period signal generation circuit that generates a reference period signal according to a level of a reference voltage, a first period signal generation circuit that generates a first period signal according to a voltage level of a pad, a period comparison circuit that compares a period of the first period signal with a period of the reference period signal and count a plurality of driving signals, and a driver circuit that drives the pad in response to the plurality of driving signals.
摘要:
A duty cycle correction apparatus includes a fixed delay unit configured to set a fixed delay time to a DLL clock signal and generate a delay rising clock signal; a variable delay unit configured to delay the DLL clock signal in response to a control signal and generate a delay falling clock signal; a duty cycle correction unit configured to generate a correction rising clock signal and a correction falling clock signal that are toggled in conformity with edge timing of the delay rising clock signal and the delay falling clock signal; and a delay control unit configured to detect duty cycles of the correction rising clock signal and the correction falling clock signal and generate the control signal.
摘要:
A semiconductor integrated circuit comprises a PLL (Phase Locked Loop (PLL) circuit configured to generate a control voltage in response to a frequency of a reference clock signal, and to generate a PLL clock signal having a frequency that corresponds to a level of the control voltage, and a voltage controlled oscillator configured to oscillate an output clock signal in response to the PLL clock signal, and to allow the PLL clock signal to have a frequency that corresponds to a level of the control voltage.
摘要:
A duty cycle correction circuit includes a signal generating unit including a first signal generating unit coupled to a power supply voltage terminal and configured to output a complementary output signal of an output signal in response to a clock signal, and a second signal generating unit coupled to the power supply voltage terminal and configured to output the output signal in response to a complementary clock signal of the clock signal; a variable resistor unit coupled between the first and second signal generating units configured to vary an amount of current flowing into the signal generating unit according to a duty correction control signal, the duty correction control signal having a voltage level determined based on a voltage level of the output signal; and a current source coupled between the variable resistor unit and a ground voltage terminal configured to supply current to the signal generating unit.
摘要:
A data alignment circuit of a semiconductor memory apparatus for receiving and aligning parallel data group includes a first control unit, a second control unit, a first alignment unit and a second alignment unit. The first alignment unit generates a first control signal group in response to an address group, a clock signal, and a latency signal. The second control unit generates a second control signal group in response to the address group, the clock signal, and the latency signal. The first alignment unit aligns the parallel data group as a first serial data group in response to the first control signal group. The second alignment unit aligns the parallel data group as a second serial data group in response to the second control signal group.
摘要:
A data output circuit includes a pre-driving block configured to receive input data, generate a plurality of pull-up signals and pull-down signals, and change enable times of the pull-up signals and the pull-down signals in response to a plurality of control signals, and a main driving block configured to generate output data in response to the pull-up signals and the pull-down signals.
摘要:
A domain crossing circuit of a semiconductor memory apparatus, the domain crossing circuit comprising first and second count signals generated at substantially a same clock period, and representing predetermined clock differences with reference to an internal clock signal with respect to same bit combination data, and a data processing unit configured to provide output data corresponding to input data based on the second count signal in response to the input data synchronized to an external clock signal.
摘要:
A semiconductor IC device capable of power-sharing includes a first power line configured to be supplied with a first power, a second power line configured to be supplied with a second power, a switching block configured to connect the first power line with the second power line in response to a first control signal, and a power-sharing control block configured to generate the control signal in accordance with a plurality of operation command signals.