STORAGE DEVICE AND DATA STORAGE SYSTEM INCLUDING OF THE SAME
    3.
    发明申请
    STORAGE DEVICE AND DATA STORAGE SYSTEM INCLUDING OF THE SAME 审中-公开
    存储设备和包括其的数据存储系统

    公开(公告)号:US20100251077A1

    公开(公告)日:2010-09-30

    申请号:US12729285

    申请日:2010-03-23

    IPC分类号: G06F12/02 H03M13/05 G06F11/10

    CPC分类号: G06F11/1048

    摘要: A storage device includes a controller unit and a memory cell array. The controller unit is for outputting data through a first data path or a second data path according to a property of externally supplied input data. The memory cell array includes a first memory and a second memory, and receives and stores the data from the controller unit output through the first and second data paths. The first memory has a different memory cell structure than the second memory.

    摘要翻译: 存储装置包括控制器单元和存储单元阵列。 控制器单元用于根据外部提供的输入数据的属性通过第一数据路径或第二数据路径输出数据。 存储单元阵列包括第一存储器和第二存储器,并且通过第一和第二数据路径接收并存储来自控制器单元输出的数据。 第一存储器具有与第二存储器不同的存储单元结构。

    Memory device and method of programming thereof
    4.
    发明申请
    Memory device and method of programming thereof 有权
    存储器件及其编程方法

    公开(公告)号:US20100020620A1

    公开(公告)日:2010-01-28

    申请号:US12453964

    申请日:2009-05-28

    IPC分类号: G11C16/04 G06F12/00

    CPC分类号: G11C11/5628 G11C7/1006

    摘要: Example embodiments may provide a memory device and memory data programming method. The memory device according to example embodiments may encode a first data page to generate at least one first codeword and encode a second data page to generate a second codeword. The memory device may generate the first codeword with at least one of a maximum value of a number of successive ones and a second maximum value of a number of successive zeros. The memory device may program the at least one first codeword and the at least one second codeword to a plurality of multi-bit cells.

    摘要翻译: 示例性实施例可以提供存储器设备和存储器数据编程方法。 根据示例性实施例的存储器件可编码第一数据页以产生至少一个第一码字,并对第二数据页进行编码以产生第二码字。 存储器装置可以利用连续零个数的最大值和连续零数的第二最大值中的至少一个来生成第一码字。 存储器件可以将至少一个第一代码字和至少一个第二代码字编程到多个多位单元。

    Memory device and method of programming thereof
    5.
    发明授权
    Memory device and method of programming thereof 有权
    存储器件及其编程方法

    公开(公告)号:US08004891B2

    公开(公告)日:2011-08-23

    申请号:US12453964

    申请日:2009-05-28

    IPC分类号: G11C16/04

    CPC分类号: G11C11/5628 G11C7/1006

    摘要: Example embodiments may provide a memory device and memory data programming method. The memory device according to example embodiments may encode a first data page to generate at least one first codeword and encode a second data page to generate a second codeword. The memory device may generate the first codeword with at least one of a maximum value of a number of successive ones and a second maximum value of a number of successive zeros. The memory device may program the at least one first codeword and the at least one second codeword to a plurality of multi-bit cells.

    摘要翻译: 示例性实施例可以提供存储器设备和存储器数据编程方法。 根据示例性实施例的存储器件可编码第一数据页以产生至少一个第一码字,并对第二数据页进行编码以产生第二码字。 存储器装置可以利用连续零个数的最大值和连续零数的第二最大值中的至少一个来生成第一码字。 存储器件可以将至少一个第一代码字和至少一个第二代码字编程到多个多位单元。

    Memory devices and data decision methods
    6.
    发明申请
    Memory devices and data decision methods 有权
    内存设备和数据决策方法

    公开(公告)号:US20090234792A1

    公开(公告)日:2009-09-17

    申请号:US12292539

    申请日:2008-11-20

    IPC分类号: G06N5/00

    CPC分类号: G06N99/005

    摘要: Disclosed are a memory device and a data decision method. The memory device may include a memory cell array, and a decision unit configured to read first data from the memory cell array via a first channel, perform at least one of a hard and soft decision on the first data using a first number of decision levels set based on characteristics of the first channel, read second data from the memory cell array via a second channel, and perform a soft decision on the second data using a second number of decision levels set based on characteristics of the second channel.

    摘要翻译: 公开了一种存储器件和数据判定方法。 存储器装置可以包括存储单元阵列,以及判定单元,被配置为经由第一通道从存储单元阵列读取第一数据,使用第一数量的判定级别对第一数据执行硬判决和软判决中的至少一个 基于第一信道的特性设置,经由第二信道从存储器单元阵列读取第二数据,并且使用基于第二信道的特性设置的第二数量的判定级来对第二数据执行软判决。

    Memory devices and data decision methods
    7.
    发明授权
    Memory devices and data decision methods 有权
    内存设备和数据决策方法

    公开(公告)号:US08200607B2

    公开(公告)日:2012-06-12

    申请号:US12292539

    申请日:2008-11-20

    IPC分类号: G06F17/00 G06N5/02

    CPC分类号: G06N99/005

    摘要: Disclosed are a memory device and a data decision method. The memory device may include a memory cell array, and a decision unit configured to read first data from the memory cell array via a first channel, perform at least one of a hard and soft decision on the first data using a first number of decision levels set based on characteristics of the first channel, read second data from the memory cell array via a second channel, and perform a soft decision on the second data using a second number of decision levels set based on characteristics of the second channel.

    摘要翻译: 公开了一种存储器件和数据判定方法。 存储器装置可以包括存储单元阵列,以及判定单元,被配置为经由第一通道从存储单元阵列读取第一数据,使用第一数量的判定级别对第一数据执行硬判决和软判决中的至少一个 基于第一信道的特性设置,经由第二信道从存储器单元阵列读取第二数据,并且使用基于第二信道的特性设置的第二数量的判定级来对第二数据执行软判决。

    Memory device and method of programming thereof
    9.
    发明申请
    Memory device and method of programming thereof 有权
    存储器件及其编程方法

    公开(公告)号:US20100008146A1

    公开(公告)日:2010-01-14

    申请号:US12453594

    申请日:2009-05-15

    IPC分类号: G11C11/34 G11C16/04

    摘要: The method of programming data in a memory device includes applying a plurality of pulses to a plurality of memory cells, at least one of the plurality of pulses being a positive pulse having a positive voltage and at least one of the plurality of pulses being a negative pulse having a negative voltage, and a temporal interval existing between subsequent pulses of the plurality of pulses, and controlling at least one of a width of at least one of the temporal intervals and a magnitude of at least one of the plurality of pulses.

    摘要翻译: 在存储器件中编程数据的方法包括将多个脉冲施加到多个存储器单元,所述多个脉冲中的至少一个是具有正电压的正脉冲,并且所述多个脉冲中的至少一个是负的 具有负电压的脉冲和存在于所述多个脉冲的后续脉冲之间的时间间隔,并且控制所述多个脉冲中的至少一个时间间隔中的至少一个的幅度和至少一个的幅度中的至少一个。

    Memory device and method of programming thereof
    10.
    发明授权
    Memory device and method of programming thereof 有权
    存储器件及其编程方法

    公开(公告)号:US07978521B2

    公开(公告)日:2011-07-12

    申请号:US12453594

    申请日:2009-05-15

    IPC分类号: G11C16/04

    摘要: The method of programming data in a memory device includes applying a plurality of pulses to a plurality of memory cells, at least one of the plurality of pulses being a positive pulse having a positive voltage and at least one of the plurality of pulses being a negative pulse having a negative voltage, and a temporal interval existing between subsequent pulses of the plurality of pulses, and controlling at least one of a width of at least one of the temporal intervals and a magnitude of at least one of the plurality of pulses.

    摘要翻译: 在存储器件中编程数据的方法包括将多个脉冲施加到多个存储器单元,所述多个脉冲中的至少一个是具有正电压的正脉冲,并且所述多个脉冲中的至少一个是负的 具有负电压的脉冲和存在于所述多个脉冲的后续脉冲之间的时间间隔,并且控制所述多个脉冲中的至少一个时间间隔中的至少一个的幅度和至少一个的幅度中的至少一个。