摘要:
Provided are a biosensor and a method of fabricating the same. The biosensor has a transistor structure including a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, source and drain electrodes formed on the gate insulating layer, and a channel region formed between the source and drain electrodes. Here, the channel region includes an active layer formed of an active polymer sensing an antigen-antibody reaction and a hydrophilic nano particle. The active layer is formed through direct printing, for example, inkjet printing. The biosensor having such a structure can be increased in reactivity between an antigen and an antibody and hydrophilicity to improve the sensor's characteristics, fabricated in a large-area process using direct printing, and further facilitates formation of devices on various substrates formed of, for example, plastic.
摘要:
Provided is a method of forming a fine pattern of a polymer thin film using a phenomenon that another material having a large difference in surface energy in comparison with a polymer thin film pattern is dewetted on the polymer thin film pattern. Two polymer materials having a large difference in surface energy can be applied to readily and conveniently form a fine pattern of a polymer thin film of micrometer or sub-micrometer grade.
摘要:
Provided is a method of forming a fine pattern of a polymer thin film using a phenomenon that another material having a large difference in surface energy in comparison with a polymer thin film pattern is dewetted on the polymer thin film pattern. Two polymer materials having a large difference in surface energy can be applied to readily and conveniently form a fine pattern of a polymer thin film of micrometer or sub-micrometer grade.
摘要:
An organic thin film transistor (OTFT), a method of manufacturing the same, and a biosensor using the OTFT are provided. The OTFT includes a gate electrode, a gate insulating layer, source and drain electrodes, and an organic semiconductor layer disposed on a substrate and further includes an interface layer formed between the gate insulating layer and the organic semiconductor layer by a sol-gel process. The gate insulating layer is formed of an organic polymer, and the interface layer is formed of an inorganic material. The OTFT employs the interface layer interposed between the gate insulating layer and the organic semiconductor layer so that the gate insulating layer can be protected from the exterior and adhesion of the gate insulating layer with the organic semiconductor layer can be improved, thereby increasing driving stability. Also, since the OTFT can use a plastic substrate, the manufacture of the OTFT is inexpensive so that the OTFT can be used as a disposable biosensor.
摘要:
An organic thin film transistor (OTFT), a method of manufacturing the same, and a biosensor using the OTFT are provided. The OTFT includes a gate electrode, a gate insulating layer, source and drain electrodes, and an organic semiconductor layer disposed on a substrate and further includes an interface layer formed between the gate insulating layer and the organic semiconductor layer by a sol-gel process. The gate insulating layer is formed of an organic polymer, and the interface layer is formed of an inorganic material. The OTFT employs the interface layer interposed between the gate insulating layer and the organic semiconductor layer so that the gate insulating layer can be protected from the exterior and adhesion of the gate insulating layer with the organic semiconductor layer can be improved, thereby increasing driving stability. Also, since the OTFT can use a plastic substrate, the manufacture of the OTFT is inexpensive so that the OTFT can be used as a disposable biosensor.
摘要:
Provided is a detector having a transistor or resistor structure. When an electrode is exposed to a detected solution, such as blood, a variation in current flowing through the detected solution may be greater than a variation in the electrical characteristics of the detector caused by a variation in the physical properties of semiconductor so that it is difficult to detect whether a bio-particle is contained in the detected solution. In order to solve this problem, a detection portion and an electrical measurement portion are separately formed, and the detection portion is processed with the bio-particle and then post-processed. Subsequently, the detection portion and the electrical measurement portion are bonded to each other using, for example, a laminating process, and the detector measures a detection value.
摘要:
Provided is a detector having a transistor or resistor structure. When an electrode is exposed to a detected solution, such as blood, a variation in current flowing through the detected solution may be greater than a variation in the electrical characteristics of the detector caused by a variation in the physical properties of semiconductor so that it is difficult to detect whether a bio-particle is contained in the detected solution. In order to solve this problem, a detection portion and an electrical measurement portion are separately formed, and the detection portion is processed with the bio-particle and then post-processed. Subsequently, the detection portion and the electrical measurement portion are bonded to each other using, for example, a laminating process, and the detector measures a detection value.
摘要:
Provided are a detector and a method of fabricating the same. The detector includes a base portion; first and second electrodes disposed on the base portion and spaced apart from each other; a reactant layer disposed between the first and second electrodes on the base portion to react with a specific functional group contained in a fluid; and a protection medium layer surrounding the first and second electrodes and forming a reaction space to expose a portion of the reactant layer. In the detector, electrodes can be effectively protected at low cost, and a path for guiding a fluid to be detected can be provided.
摘要:
Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.
摘要:
A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.