利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

39 条记录 (耗时 0.025 秒)

    Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film
    1.
    发明授权
    Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film 失效
    具有氧化钽膜的半导体存储器件的电容器的制造方法

    公开(公告)号：US06207489B1

    公开(公告)日：2001-03-27

    申请号：US09393186

    申请日：1999-09-10

    申请人： Kab-jin Nam ,  Seok-jun Won ,  Ki-yeon Park ,  Yong-woo Hyung ,  Young-wook Park

    发明人： Kab-jin Nam ,  Seok-jun Won ,  Ki-yeon Park ,  Yong-woo Hyung ,  Young-wook Park

    IPC分类号： H01L218242

    CPC分类号： H01L21/02183 ,  C03C23/0075 ,  H01L21/02271 ,  H01L21/0231 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/31604 ,  H01L27/1085 ,  H01L28/56

    摘要： A method for manufacturing a capacitor having a dielectric film formed of a tantalum oxide film. The method includes forming a lower electrode that is electrically connected to an active region of a semiconductor substrate. A pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof, is formed on the surface of the lower electrode. A dielectric film is formed on the pre-treatment film using a Ta precursor. The dielectric film includes a first dielectric layer deposited at a first temperature selected from a designated temperature range, and a second dielectric layer deposited at a second temperature different from the first temperature and selected from the same designated temperature range. A thermal treatment is thereafter performed on the dielectric film in an oxygen atmosphere.

    摘要翻译： 一种制造具有由氧化钽膜形成的电介质膜的电容器的方法。 该方法包括形成电连接到半导体衬底的有源区的下电极。 在下电极的表面上形成包括选自氧化硅，氮化硅及其组合的组分的预处理膜。 使用Ta前体在预处理膜上形成电介质膜。 电介质膜包括在选自指定温度范围的第一温度下沉积的第一介电层和在与第一温度不同的第二温度下沉积并选自相同指定温度范围的第二电介质层。 此后在氧气氛中对电介质膜进行热处理。

    Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere
    2.
    发明授权
    Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere 有权
    在氢气氛下对电介质膜进行热处理的半导体器件的电容器的制造方法

    公开(公告)号：US6136641A

    公开(公告)日：2000-10-24

    申请号：US134063

    申请日：1998-08-13

    申请人： Seok-jun Won ,  Kab-jin Nam ,  Young-wook Park

    发明人： Seok-jun Won ,  Kab-jin Nam ,  Young-wook Park

    IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/70

    CPC分类号： H01L28/55 ,  H01L21/3105 ,  H01L21/31691

    摘要： A capacitor fabricating method for a semiconductor device where a dielectric film is thermally treated under hydrogen atmosphere to improve interface characteristics between the dielectric film and an electrode. In the method, a lower electrode is formed on a semiconductor substrate. A dielectric film is formed on the lower electrode. The dielectric film is thermally treated under hydrogen atmosphere. An upper electrode is formed on the dielectric film, thereby completing formation of the capacitor. The thermal treatment under the hydrogen atmosphere is performed at a temperature of 300 to 600.degree. C. using H.sub.2 gas or H.sub.2 plasma for 5 to 60 minutes. Thus, the density of an interface trap between the electrode and the dielectric film of the capacitor is reduced.

    摘要翻译： 一种用于半导体器件的电容器制造方法，其中在氢气氛下对电介质膜进行热处理以改善介电膜和电极之间的界面特性。 在该方法中，在半导体衬底上形成下电极。 在下电极上形成电介质膜。 电介质膜在氢气氛下进行热处理。 在电介质膜上形成上电极，从而形成电容器。 氢气氛下的热处理在300〜600℃的温度下，使用H2气或H2等离子体进行5〜60分钟。 因此，电容器的电极和电介质膜之间的界面陷阱的密度降低。

    Apparatus for forming a film on a substrate
    4.
    发明授权
    Apparatus for forming a film on a substrate 有权
    用于在基板上形成膜的装置

    公开(公告)号：US06416584B1

    公开(公告)日：2002-07-09

    申请号：US09350407

    申请日：1999-07-08

    申请人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    发明人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    IPC分类号： C23C1600

    CPC分类号： C23C16/56 ,  C23C16/405

    摘要： An apparatus for forming a film on a substrate includes a reaction chamber and gas supply lines. The gas supply lines supply gases for depositing and annealing the film. Depositing a dielectric film and annealing the dielectric film are performed in situ using the reaction chamber. Thus, the time required for forming the dielectric film is shortened, improving the productivity. Also, deposition and annealing of the dielectric film are performed in the same reaction chamber, so that less area is required for manufacturing equipment.

    摘要翻译： 在基板上形成膜的装置包括反应室和气体供给管线。 气体供应管线供应用于沉积和退火膜的气体。 使用反应室原位进行沉积介电膜并退火介电膜。 因此，缩短了形成电介质膜所需的时间，提高了生产率。 此外，电介质膜的沉积和退火在相同的反应室中进行，因此制造设备需要较少的面积。

    Method for forming a thin film
    5.
    发明授权
    Method for forming a thin film 失效

    公开(公告)号：US07481882B2

    公开(公告)日：2009-01-27

    申请号：US10131761

    申请日：2002-04-23

    申请人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    发明人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    IPC分类号： H01L21/285 ,  H01L27/10

    CPC分类号： C23C16/56 ,  C23C16/405

    摘要： A method for forming a film includes forming the film on a substrate, followed by performing a first annealing of the film at a temperature lower than a crystallization temperature of the film. A second annealing of the film is performed at a temperature higher that the crystallization temperature. Forming the film and the first annealing of the film are performed in situ in a chamber. Alternatively, the first and second annealing are performed in situ in an apparatus.

    Methods for forming capacitors including rapid thermal oxidation
    6.
    发明授权
    Methods for forming capacitors including rapid thermal oxidation 失效
    形成电容器的方法包括快速热氧化

    公开(公告)号：US5939131A

    公开(公告)日：1999-08-17

    申请号：US874614

    申请日：1997-06-13

    申请人： Kyung-hoon Kim ,  Kab-jin Nam ,  In-sung Park ,  Young-wook Park

    发明人： Kyung-hoon Kim ,  Kab-jin Nam ,  In-sung Park ,  Young-wook Park

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  B05P5/12

    CPC分类号： H01L28/40 ,  H01L21/31604

    摘要： A method for forming a microelectronic capacitor includes the steps of forming a first conductive layer on a substrate and forming an oxide reducing layer on the first conductive layer opposite the substrate wherein the oxide reducing layer reduces oxidation of the first conductive layer. An oxide layer is formed on the oxide reducing layer opposite the substrate, and a dielectric layer is formed on the oxide layer opposite the substrate wherein the dielectric layer has a dielectric constant that is higher than a dielectric constant of the oxide reducing layer, and higher than a dielectric constant of the oxide layer. In addition, a second conductive layer is formed on the dielectric layer opposite the substrate. Related structures are also discussed.

    摘要翻译： 一种形成微电子电容器的方法包括以下步骤：在衬底上形成第一导电层，并在与衬底相对的第一导电层上形成氧化物还原层，其中氧化物还原层减少第一导电层的氧化。 在与衬底相对的氧化物还原层上形成氧化物层，并且在与衬底相对的氧化物层上形成介电层，其中介电层的介电常数高于氧化物还原层的介电常数，并且更高 比氧化物层的介电常数大。 此外，在与衬底相对的电介质层上形成第二导电层。 还讨论了相关结构。