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19 条记录 (耗时 0.015 秒)

    Hydrogen sulfide injection method for phosphor deposition
    1.
    发明授权
    Hydrogen sulfide injection method for phosphor deposition 有权
    用于荧光体沉积的硫化氢注入方法

    公开(公告)号：US07585545B2

    公开(公告)日：2009-09-08

    申请号：US10878221

    申请日：2004-06-28

    申请人： Yongbao Xin ,  Joe Acchione ,  Terry Hunt

    发明人： Yongbao Xin ,  Joe Acchione ,  Terry Hunt

    IPC分类号： C23C16/00

    CPC分类号： C09K11/7774 ,  C23C14/0021 ,  C23C14/0623 ,  H05B33/14

    摘要： The invention is a method of vacuum evaporation of a multi-element sulfur bearing thin film compositions onto a substrate. The method comprises targeting a source of gas or vapour sulfur species at one or more source materials that make up at least part of the thin film composition during evaporation of the source materials. The sulfur species is heated to a high temperature as it reaches the one or more source materials and there is a chemical interaction of the sulfur species with evaporant from the one or more source materials during deposition of said thin film composition. The method is particularly useful for the deposition of phosphors for full colour ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.

    摘要翻译： 本发明是将多元素含硫薄膜组合物真空蒸发到基底上的方法。 该方法包括在源材料蒸发期间将一种或多种源材料的气源或蒸汽硫物质的源定位成组成至少部分薄膜组合物的源材料。 硫物质在达到一种或多种源材料时被加热至高温，并且在沉积所述薄膜组合物期间硫物质与蒸发剂与蒸发剂的化学相互作用。 该方法对于使用具有高介电常数的厚膜电介质层的全色交流电致发光显示器的荧光体的沉积特别有用。

    Controlled sulfur species deposition process
    2.
    发明申请
    Controlled sulfur species deposition process 有权
    受控硫物质沉积过程

    公开(公告)号：US20050042376A1

    公开(公告)日：2005-02-24

    申请号：US10767912

    申请日：2004-01-29

    申请人： Yongbao Xin ,  Jim Stiles ,  Chi Leung ,  Terry Hunt ,  Joe Acchione

    发明人： Yongbao Xin ,  Jim Stiles ,  Chi Leung ,  Terry Hunt ,  Joe Acchione

    IPC分类号： C09K11/77 ,  C09K11/84 ,  C23C14/00 ,  C23C14/06 ,  C23C14/54 ,  C23C16/06 ,  H05B33/10 ,  H05B33/14

    CPC分类号： H05B33/10 ,  C09K11/7734 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/548 ,  H05B33/14

    摘要： The present invention is a method for the deposition of a thin film of a pre-determined composition onto a substrate, the thin film comprising ternary, quaternary or higher sulfide compounds selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table. The method comprises volatizing at least one source material of a sulfide of a pre-determined composition to form a sulfur-bearing thin film composition on a substrate and simultaneously inhibiting any excess quantity of sulfur-bearing species volatilized from the at least one source material from impinging on the substrate. The method improves the luminance and emission spectrum of phosphor materials used for full colour ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.

    摘要翻译： 本发明是一种用于将预定组合物的薄膜沉积到基底上的方法，所述薄膜包含三元，四元或更高级硫化物，其选自硫代铝酸盐，硫代镓酸盐和至少一种元素的硫代酸盐 来自周期表IIA和IIB组。 该方法包括使预定组合物的硫化物的至少一种源材料挥发，以在基材上形成含硫薄膜组合物并同时抑制从至少一种源材料挥发的任何过量的含硫物质 撞击基板。 该方法提高了使用具有高介电常数的厚膜电介质层的全色交流电致发光显示器的荧光体材料的亮度和发射光谱。

    Hydrogen sulfide injection method for phosphor deposition
    3.
    发明申请
    Hydrogen sulfide injection method for phosphor deposition 有权
    用于荧光体沉积的硫化氢注入方法

    公开(公告)号：US20050025887A1

    公开(公告)日：2005-02-03

    申请号：US10878221

    申请日：2004-06-28

    申请人： Yongbao Xin ,  Joe Acchione ,  Terry Hunt

    发明人： Yongbao Xin ,  Joe Acchione ,  Terry Hunt

    IPC分类号： C09K11/77 ,  C23C14/00 ,  C23C14/06 ,  C23C16/06 ,  H05B33/14

    CPC分类号： C09K11/7774 ,  C23C14/0021 ,  C23C14/0623 ,  H05B33/14

    摘要： The invention is a method of vacuum evaporation of a multi-element sulfur bearing thin film compositions onto a substrate. The method comprises targeting a source of gas or vapour sulfur species at one or more source materials that make up at least part of the thin film composition during evaporation of the source materials. The sulfur species is heated to a high temperature as it reaches the one or more source materials and there is a chemical interaction of the sulfur species with evaporant from the one or more source materials during deposition of said thin film composition. The method is particularly useful for the deposition of phosphors for full colour ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.

    摘要翻译： 本发明是将多元素含硫薄膜组合物真空蒸发到基底上的方法。 该方法包括在源材料蒸发期间将一种或多种源材料的气源或蒸汽硫物质的源定位成组成至少部分薄膜组合物的源材料。 硫物质在达到一种或多种源材料时被加热至高温，并且在沉积所述薄膜组合物期间硫物质与蒸发剂与蒸发剂的化学相互作用。 该方法对于使用具有高介电常数的厚膜电介质层的全色交流电致发光显示器的荧光体的沉积特别有用。

    Controlled sulfur species deposition process
    4.
    发明授权
    Controlled sulfur species deposition process 有权
    受控硫物质沉积过程

    公开(公告)号：US07811634B2

    公开(公告)日：2010-10-12

    申请号：US10767912

    申请日：2004-01-29

    申请人： Yongbao Xin ,  Jim Stiles ,  Chi Kit Leung ,  Terry Hunt ,  Joe Acchione

    发明人： Yongbao Xin ,  Jim Stiles ,  Chi Kit Leung ,  Terry Hunt ,  Joe Acchione

    IPC分类号： C23C16/00

    CPC分类号： H05B33/10 ,  C09K11/7734 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/548 ,  H05B33/14

    摘要： The present invention is a method for the deposition of a thin film of a pre-determined composition onto a substrate, the thin film comprising ternary, quaternary or higher sulfide compounds selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table. The method comprises volatizing at least one source material of a sulfide of a pre-determined composition to form a sulfur-bearing thin film composition on a substrate and simultaneously inhibiting any excess quantity of sulfur-bearing species volatilized from the at least one source material from impinging on the substrate. The method improves the luminance and emission spectrum of phosphor materials used for full color ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.

    摘要翻译： 本发明是一种用于将预定组合物的薄膜沉积到基底上的方法，所述薄膜包含三元，四元或更高级硫化物，其选自硫代铝酸盐，硫代镓酸盐和至少一种元素的硫代酸盐 来自周期表IIA和IIB组。 该方法包括使预定组合物的硫化物的至少一种源材料挥发，以在基材上形成含硫薄膜组合物并同时抑制从至少一种源材料挥发的任何过量的含硫物质 撞击基板。 该方法提高了使用具有高介电常数的厚膜电介质层的全色交流电致发光显示器的荧光体材料的亮度和发射光谱。

    Laser ablation method for patterning a thin film layer
    7.
    发明申请
    Laser ablation method for patterning a thin film layer 有权
    用于图案化薄膜层的激光烧蚀方法

    公开(公告)号：US20050231105A1

    公开(公告)日：2005-10-20

    申请号：US11000732

    申请日：2004-12-01

    申请人： Dave Lovell ,  Terry Hunt

    发明人： Dave Lovell ,  Terry Hunt

    IPC分类号： B23K26/00 ,  B23K26/12 ,  B23K26/36 ,  B23K26/38 ,  B23K26/40 ,  B23K101/36 ,  G09F9/00 ,  H01L51/00 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/28 ,  H01J1/62 ,  H01J63/04

    CPC分类号： H01L51/0005 ,  B23K26/0006 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/35 ,  B23K2103/172 ,  B23K2103/50 ,  B23K2103/52 ,  H05B33/10 ,  H05B33/12

    摘要： The invention relates to a laser ablation method for patterning thin film layers for thick dielectric electroluminescent displays without substantial ablation of or damage to any other layers. Typically, the thin film layers are phosphor layers. The laser ablation method for patterning a thin film phosphor layer of a thick dielectric electroluminescent display includes selecting a wavelength of laser radiation, a laser pulse length, a laser energy density and a sufficient number of laser pulses to pattern the thin film phosphor layer without substantial ablation of or damage to other layers, whereby the wavelength of laser radiation is such that the laser radiation is substantially absorbed by the thin film phosphor layer with minimal absorption by other layers, the laser pulse length is sufficiently short that during the duration of the laser pulse there is minimal heat flow from the thin film phosphor layer to other layers, and the laser energy density and the sufficient number of laser pulses is sufficiently high that energy is deposited in the thin film phosphor layer, whereby the entire thickness of at least a portion of the thin film phosphor layer is ablated.

    摘要翻译： 本发明涉及一种用于构图厚电介质电致发光显示器的薄膜层的激光烧蚀方法，而不会对其它任何层进行实质的消融或损坏。 通常，薄膜层是荧光体层。 用于图案化厚电介质电致发光显示器的薄膜荧光体层的激光烧蚀方法包括选择激光辐射的波长，激光脉冲长度，激光能量密度和足够数量的激光脉冲以对薄膜荧光体层进行图案化，而没有实质的 消融或损坏其他层，由此激光辐射的波长使得激光辐射基本上被薄膜磷光体层吸收，而其它层的吸收最小，激光脉冲长度足够短，在激光持续时间内 脉冲存在从薄膜荧光体层到其它层的最小热流，并且激光能量密度和足够数量的激光脉冲足够高，使得能量沉积在薄膜荧光体层中，从而整个厚度至少为 消除薄膜荧光体层的一部分。

    Method of monitoring wear of rock bit cutters
    9.
    发明授权
    Method of monitoring wear of rock bit cutters 有权
    监测岩石钻头磨损的方法

    公开(公告)号：US08757290B2

    公开(公告)日：2014-06-24

    申请号：US13188284

    申请日：2011-07-21

    申请人： Sorin G. Teodorescu ,  Terry Hunt

    发明人： Sorin G. Teodorescu ,  Terry Hunt

    IPC分类号： E21B12/02

    CPC分类号： E21B12/02

    摘要： A method of monitoring the wear of drill bits for drilling wells in earth formations, several embodiments of an improved drill bit for drilling a well in an earth formation, and methods of manufacture. In one embodiment, the bit is assembled by forming the bit, including a bit body and a plurality of cutting components; introducing a wear detector into the bit; and providing a module to monitor the wear detector and generate an indication of bit wear. The wear detector may be a witness material that may change a characteristic of at least a portion of the bit. The module may detect when the witness material is separated from the bit. The wear detector may be introduced during or after formation of the bit. The bit wear may be displayed for an operator.

    摘要翻译： 监测地层钻井钻头磨损的方法，用于在地层中钻井的改进钻头的几个实施例，以及制造方法。 在一个实施例中，通过形成钻头来组装钻头，包括钻头体和多个切割部件; 将磨损检测器引入钻头; 并提供一个模块来监测磨损检测器并产生钻头磨损的指示。 磨损检测器可以是可以改变钻头的至少一部分的特性的见证材料。 模块可以检测证人材料与钻头分离的时间。 可以在钻头形成期间或之后引入磨损检测器。 钻头磨损可能会显示给操作员。