摘要:
[Problem] To provide a substrate treatment device which can more efficiently heat and more efficiently use a treatment solution to treat the surface of a plate-shaped substrate.[Solution] A substrate treatment device which is provided with a treatment solution feed mechanism 50 and feeds a treatment solution S to the surface of a plate-shaped substrate that is held on the substrate holding part 10 and which uses the treatment solution S to treat the surface of the plate-shaped substrate 100, which substrate treatment device has a treatment solution holding plate 15 which is arranged facing the surface of the plate-shaped substrate 100 that is held at the substrate holding part 10, across a predetermined distance, and which holds the treatment solution with the surface of the plate-shaped substrate 100 and a heating part 30 which contacts a predetermined region of the treatment solution holding plate 15, including a position corresponding to the axis of rotation of the substrate holding part 10, to heat the predetermined region and which treatment solution feed mechanism feeds the treatment solution S to the clearance between the surface of the plate-shaped substrate 100 which rotates together with the substrate holding part 10 and the treatment solution holding plate 15 which is heated by the heating part 20.
摘要:
[Problem] To provide a substrate treatment device which can more efficiently heat and more efficiently use a treatment solution to treat the surface of a plate-shaped substrate.[Solution] A substrate treatment device which is provided with a treatment solution feed mechanism 50 and feeds a treatment solution S to the surface of a plate-shaped substrate that is held on the substrate holding part 10 and which uses the treatment solution S to treat the surface of the plate-shaped substrate 100, which substrate treatment device has a treatment solution holding plate 15 which is arranged facing the surface of the plate-shaped substrate 100 that is held at the substrate holding part 10, across a predetermined distance, and which holds the treatment solution with the surface of the plate-shaped substrate 100 and a heating part 30 which contacts a predetermined region of the treatment solution holding plate 15, including a position corresponding to the axis of rotation of the substrate holding part 10, to heat the predetermined region and which treatment solution feed mechanism feeds the treatment solution S to the clearance between the surface of the plate-shaped substrate 100 which rotates together with the substrate holding part 10 and the treatment solution holding plate 15 which is heated by the heating part 20.
摘要:
According to one embodiment, a cleaning method is disclosed. The method can produce an oxidizing solution including an oxidizing substance by electrolyzing a dilute sulfuric acid solution. In addition, the method can supply a highly concentrated inorganic acid solution individually, sequentially, or substantially simultaneously with the oxidizing solution to a surface of an object to be cleaned.
摘要:
The cleaning method by electrolytic sulfuric acid and the manufacturing method of semiconductor device comprising: the process in which the first sulfuric acid solution is supplied from outside to the sulfuric acid electrolytic cell to form the first electrolytic sulfuric acid containing oxidizing agent in the sulfuric acid electrolytic cell; the process in which the second sulfuric acid solution, which is higher in concentration than said the first sulfuric acid solution previously supplied, is supplied from outside to said sulfuric acid electrolytic cell; said the second sulfuric acid solution and the first electrolytic sulfuric acid are mixed in said sulfuric acid electrolytic cell; and electrolysis is performed to form the cleaning solution comprising the second electrolytic sulfuric acid containing sulfuric acid and oxidation agent in said sulfuric acid electrolytic cell and the process in which cleaning treatment is performed for the cleaning object with said cleaning solution.
摘要:
According to embodiments, a cleaning liquid includes an oxidizing substance and hydrofluoric acid and exhibiting acidity. A cleaning method is disclosed. The method includes producing an oxidizing solution including an oxidizing substance by one selected from electrolyzing a sulfuric acid solution, electrolyzing hydrofluoric acid added to a sulfuric acid solution, and mixing a sulfuric acid solution with aqueous hydrogen peroxide. The method includes supplying the oxidizing solution and hydrofluoric acid to a surface of an object to be cleaned.
摘要:
Sulfuric acid electrolysis process wherein; a temperature of electrolyte containing sulfuric acid to be supplied to an anode compartment and a cathode compartment is controlled to 30 degree Celsius or more; a flow rate F1 (L/min.) of the electrolyte containing sulfuric acid to be supplied to said anode compartment is controlled to 1.5 times or more (F1/Fa≧1.5) a flow rate Fa (L/min.) of gas formed on an anode side as calculated from Equation (1) shown below and a flow rate F2(L/min.) of said electrolyte containing sulfuric acid to be supplied to said cathode compartment is controlled to 1.5 times or more (F2/Fc≧1.5) a flow rate Fe (L/min.) of gas formed on a cathode side as calculated from Equation (2) shown below. Fa=(I×S×R×T)/(4×Faraday constant) Equation (I) Fe=(I×S×R×T)/(2×Faraday constant) Equation (2) I: Electrolytic current (A)S: Time: 60 second (Fixed)R: Gas constant (0.082 1·atm/K/mol)K: Absolute temperature (273.15 degree Celsius+T degree Celsius)T: Electrolysis temperature (degree Celsius)Faraday constant: (C/mol)
摘要:
Sulfuric acid electrolysis process wherein; a temperature of electrolyte containing sulfuric acid to be supplied to an anode compartment and a cathode compartment is controlled to 30 degree Celsius or more; a flow rate F1 (L/min.) of the electrolyte containing sulfuric acid to be supplied to said anode compartment is controlled to 1.5 times or more (F1/Fa≧1.5) a flow rate Fa (L/min.) of gas formed on an anode side as calculated from Equation (1) shown below and a flow rate F2(L/min.) of said electrolyte containing sulfuric acid to be supplied to said cathode compartment is controlled to 1.5 times or more (F2/Fc≧1.5) a flow rate Fe (L/min.) of gas formed on a cathode side as calculated from Equation (2) shown below. Fa=(I×S×R×T)/(4×Faraday constant) Equation (1) Fe=(I×S×R×T)/(2×Faraday constant) Equation (2) I: Electrolytic current (A) S: Time: 60 second (Fixed) R: Gas constant (0.082 1·atm/K/mol) K: Absolute temperature (273.15 degree Celsius+T degree Celsius) T: Electrolysis temperature (degree Celsius) Faraday constant: (C/mol)
摘要:
In a sulfuric acid electrolytic cell to electrolyze sulfuric acid supplied to an anode compartment and a cathode compartment comprising a diaphragm, said anode compartment and said cathode compartment separated by said diaphragm, a cathode provided in said cathode compartment and a conductive diamond anode provided in said anode compartment, as said conductive diamond anode, a conductive diamond film is formed on the surface of said conductive substrate, the rear face of said conductive substrate is pasted, with conductive paste, on an current collector comprising a rigid body with size equal to, or larger than, said conductive substrate, an anode compartment frame constituting said anode compartment is contacted via gasket with the periphery on the side of the conductive diamond film of said diamond anode, said diaphragm is contacted with the front face of said anode compartment, further, with the front face of said diaphragm, the cathode compartment frame constituting said cathode compartment, a gasket, and said cathode are contacted in sequence, the rear face of said cathode is pasted with conductive paste to the current collector comprising a rigid body with size equal to, or larger than, said cathode and electric power is supplied from one current collector to the other current collector via said conductive paste.
摘要:
In one embodiment, an etching method is disclosed. The method can include producing an oxidizing substance by electrolyzing a sulfuric acid solution, and producing an etching solution having a prescribed oxidizing species concentration by controlling a produced amount of the produced oxidizing substance. The method can include supplying the produced etching solution to a surface of a workpiece.
摘要:
The cleaning method by electrolytic sulfuric acid and the manufacturing method of semiconductor device comprising: the process in which the first sulfuric acid solution is supplied from outside to the sulfuric acid electrolytic cell to form the first electrolytic sulfuric acid containing oxidizing agent in the sulfuric acid electrolytic cell; the process in which the second sulfuric acid solution, which is higher in concentration than said the first sulfuric acid solution previously supplied, is supplied from outside to said sulfuric acid electrolytic cell; said the second sulfuric acid solution and the first electrolytic sulfuric acid are mixed in said sulfuric acid electrolytic cell; and electrolysis is performed to form the cleaning solution comprising the second electrolytic sulfuric acid containing sulfuric acid and oxidation agent in said sulfuric acid electrolytic cell and the process in which cleaning treatment is performed for the cleaning object with said cleaning solution.