公开(公告)号：US20060033104A1

公开(公告)日：2006-02-16

申请号：US11197637

申请日：2005-08-05

申请人： Yoshiaki Nakazaki ,  Fumiki Nakano ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Tomoya Kato

发明人： Yoshiaki Nakazaki ,  Fumiki Nakano ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Tomoya Kato

IPC分类号： H01L29/04 ,  H01L29/76 ,  H01L27/12

CPC分类号： H01L21/02675 ,  B23K26/073 ,  G02F1/13454 ,  H01L21/2026 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： There is disclosed a thin film transistor having a source region, a channel region, and a drain region in a semiconductor thin film whose crystals have grown in a transverse direction, the thin film transistor having a gate insulating film and a gate electrode in an upper part of the channel region, wherein a channel-region-side edge portion of the drain region or the source region is disposed in such a manner as to be positioned in the vicinity of an end position of lateral growth.

摘要翻译： 公开了一种在半导体薄膜中具有晶体沿横向生长的源极区，沟道区和漏极区的薄膜晶体管，薄膜晶体管具有栅极绝缘膜和位于上部的栅电极 沟道区域的一部分，其中漏极区域或源极区域的沟道区域侧边缘部分以这样的方式设置，以便位于横向生长的结束位置附近。

公开(公告)号：US20050212063A1

公开(公告)日：2005-09-29

申请号：US11085111

申请日：2005-03-22

申请人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

发明人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/8236 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L27/1296 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78696

摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

摘要翻译： 提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响 形成在Si岛的边缘部分的寄生晶体管。 薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。 栅极区域在绝缘基板上具有平面的环形形状。 高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

公开(公告)号：US07309900B2

公开(公告)日：2007-12-18

申请号：US11085111

申请日：2005-03-22

申请人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

发明人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

IPC分类号： H01L29/76

CPC分类号： H01L27/1296 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78696

摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

摘要翻译： 提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响 形成在Si岛的边缘部分的寄生晶体管。 薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。 栅极区域在绝缘基板上具有平面的环形形状。 高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

公开(公告)号：US20070228469A1

公开(公告)日：2007-10-04

申请号：US11758217

申请日：2007-06-05

申请人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

发明人： Fumiki Nakano ,  Genshiro Kawachi ,  Yoshiaki Nakazaki ,  Shinzo Tsuboi ,  Takahiko Endo ,  Tomoya Kato

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L27/1296 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78696

摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

摘要翻译： 提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响 形成在Si岛的边缘部分的寄生晶体管。 薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。 栅极区域在绝缘基板上具有平面的环形形状。 高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

公开(公告)号：US07485505B2

公开(公告)日：2009-02-03

申请号：US11855755

申请日：2007-09-14

申请人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极 在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

公开(公告)号：US20070023757A1

公开(公告)日：2007-02-01

申请号：US11428496

申请日：2006-07-03

申请人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L29/76

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor having a higher mobility for electrons or holes, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. Thus, the present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film having a crystallization region with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了一种对于电子或空穴具有较高迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 因此，本发明提供一种薄膜晶体管，其在具有在水平方向上生长的晶体的结晶区域的半导体薄膜中具有源极区域，沟道区域和漏极区域，所述薄膜晶体管具有栅极 绝缘膜和沟道区上的栅极电极，其中在晶体生长结束位置附近形成漏极区的与沟道区相邻的漏极边缘。

公开(公告)号：US20080044975A1

公开(公告)日：2008-02-21

申请号：US11855755

申请日：2007-09-14

申请人： Yoshiaki NAKAZAKI ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki NAKAZAKI ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L21/336

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极 在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

公开(公告)号：US07288787B2

公开(公告)日：2007-10-30

申请号：US11428477

申请日：2006-07-03

申请人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极 在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

公开(公告)号：US08847858B2

公开(公告)日：2014-09-30

申请号：US13889767

申请日：2013-05-08

申请人： Toshihiro Sato ,  Genshiro Kawachi ,  Yoshiro Mikami ,  Masaya Adachi

发明人： Toshihiro Sato ,  Genshiro Kawachi ,  Yoshiro Mikami ,  Masaya Adachi

IPC分类号： G09G3/30 ,  H01L27/32 ,  G09G3/32 ,  H01L51/52 ,  G09G3/20

CPC分类号： H01L27/3276 ,  G09G3/2011 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0439 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/02 ,  G09G2320/0233 ,  G09G2320/0238 ,  G09G2320/043 ,  H01L27/3246 ,  H01L27/326 ,  H01L27/3272 ,  H01L51/5284

摘要： In an organic electroluminescent light emitting display device comprising a plurality of pixels each of which includes an organic electroluminescent element emitting light by a current supplied thereto, a plurality of active elements including a first active element which acquires a data signal and a second active element which regulates the current supplied to the organic electroluminescent element in accordance with the data signal, and a capacitive element storing the data signal, the present invention utilizes a part of the capacitive element arranged in one of the pixels for a light shielding member which shields the plurality of active elements arranged the one of the pixels from light emitted by the organic electroluminescent element arranged therein or another pixel adjacent thereto so as to suppress image quality deterioration and smear appearing in an image display area of the organic electroluminescent light emitting display device.

摘要翻译： 在包括多个像素的有机电致发光显示装置中，每个像素包括通过提供给其的电流发光的有机电致发光元件，包括获取数据信号的第一有源元件和第二有源元件的多个有源元件， 调节根据数据信号提供给有机电致发光元件的电流和存储数据信号的电容元件，本发明利用布置在一个像素中的电容元件的一部分来遮蔽多个 有源元件将排列在其中的有机电致发光元件发出的光中的一个像素排列在与其相邻的其他像素上，以抑制出现在有机电致发光显示装置的图像显示区域中的图像质量恶化和拖尾。

公开(公告)号：US07791077B2

公开(公告)日：2010-09-07

申请号：US11834372

申请日：2007-08-06

申请人： Genshiro Kawachi

发明人： Genshiro Kawachi

IPC分类号： H01L27/08 ,  H01L29/04 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L27/1274 ,  G11C11/412 ,  H01L27/0722 ,  H01L27/1214 ,  H03F1/22 ,  H03F3/08 ,  H03F3/45089 ,  H03F3/45282 ,  H03F2200/534 ,  H03F2203/45024 ,  H03F2203/45032 ,  H03F2203/45371 ,  H03F2203/45702

摘要： An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconductor devices which are formed by using a semiconductor thin film and are formed in the semiconductor thin film that is provided on an insulating substrate and is crystallized in a predetermined direction. The plurality of semiconductor devices include a MOS transistor and at least either one of a lateral bipolar thin-film transistor and a MOS-bipolar hybrid thin film transistor.

摘要翻译： 在包括显示装置的绝缘基板上形成集成了MOS晶体管和双极晶体管的集成电路。 电子设备或显示器包括通过使用半导体薄膜形成并形成在设置在绝缘基板上并沿预定方向结晶的半导体薄膜中的多个半导体器件。 多个半导体器件包括MOS晶体管和横向双极型薄膜晶体管和MOS双极性混合薄膜晶体管中的至少一个。