公开(公告)号：US20060033104A1

公开(公告)日：2006-02-16

申请号：US11197637

申请日：2005-08-05

申请人： Yoshiaki Nakazaki ,  Fumiki Nakano ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Tomoya Kato

发明人： Yoshiaki Nakazaki ,  Fumiki Nakano ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Tomoya Kato

IPC分类号： H01L29/04 ,  H01L29/76 ,  H01L27/12

CPC分类号： H01L21/02675 ,  B23K26/073 ,  G02F1/13454 ,  H01L21/2026 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： There is disclosed a thin film transistor having a source region, a channel region, and a drain region in a semiconductor thin film whose crystals have grown in a transverse direction, the thin film transistor having a gate insulating film and a gate electrode in an upper part of the channel region, wherein a channel-region-side edge portion of the drain region or the source region is disposed in such a manner as to be positioned in the vicinity of an end position of lateral growth.

摘要翻译： 公开了一种在半导体薄膜中具有晶体沿横向生长的源极区，沟道区和漏极区的薄膜晶体管，薄膜晶体管具有栅极绝缘膜和位于上部的栅电极 沟道区域的一部分，其中漏极区域或源极区域的沟道区域侧边缘部分以这样的方式设置，以便位于横向生长的结束位置附近。

公开(公告)号：US20070023757A1

公开(公告)日：2007-02-01

申请号：US11428496

申请日：2006-07-03

申请人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L29/76

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor having a higher mobility for electrons or holes, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. Thus, the present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film having a crystallization region with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了一种对于电子或空穴具有较高迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 因此，本发明提供一种薄膜晶体管，其在具有在水平方向上生长的晶体的结晶区域的半导体薄膜中具有源极区域，沟道区域和漏极区域，所述薄膜晶体管具有栅极 绝缘膜和沟道区上的栅极电极，其中在晶体生长结束位置附近形成漏极区的与沟道区相邻的漏极边缘。

公开(公告)号：US07485505B2

公开(公告)日：2009-02-03

申请号：US11855755

申请日：2007-09-14

申请人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极 在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

公开(公告)号：US20080044975A1

公开(公告)日：2008-02-21

申请号：US11855755

申请日：2007-09-14

申请人： Yoshiaki NAKAZAKI ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki NAKAZAKI ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L21/336

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极 在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

公开(公告)号：US07288787B2

公开(公告)日：2007-10-30

申请号：US11428477

申请日：2006-07-03

申请人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Yoshiaki Nakazaki ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

摘要翻译： 本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。 本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极 在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

公开(公告)号：US07407873B2

公开(公告)日：2008-08-05

申请号：US11187850

申请日：2005-07-25

申请人： Hiroki Nakamura ,  Terunori Warabisako ,  Masakiyo Matsumura

发明人： Hiroki Nakamura ,  Terunori Warabisako ,  Masakiyo Matsumura

IPC分类号： H01L21/20

CPC分类号： H01L21/324 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/268

摘要： A method of manufacturing a semiconductor device includes irradiating a region to be crystallized of a non-monocrystalline semiconductor film with laser beam modulated by an optical modulator to have light intensity distribution having a minimum light intensity line or minimum light intensity spot to crystallize the region, and heating the crystallized region by irradiating light from a flash lamp onto the crystallized region.

摘要翻译： 一种制造半导体器件的方法包括用由光学调制器调制的激光束照射非单晶半导体膜结晶区域，以具有具有最小光强度线或最小光强度点的光强度分布，以使该区域结晶， 并通过将来自闪光灯的光照射到结晶​​区域来加热结晶区域。

公开(公告)号：US4984038A

公开(公告)日：1991-01-08

申请号：US194980

申请日：1988-05-17

申请人： Hideo Sunami ,  Makoto Ohkura ,  Masanobu Miyao ,  Kikuo Kusukawa ,  Masahiro Moniwa ,  ShinIchiro Kimura ,  Terunori Warabisako ,  Tokuo Kure

发明人： Hideo Sunami ,  Makoto Ohkura ,  Masanobu Miyao ,  Kikuo Kusukawa ,  Masahiro Moniwa ,  ShinIchiro Kimura ,  Terunori Warabisako ,  Tokuo Kure

IPC分类号： H01L21/762 ,  H01L27/108

CPC分类号： H01L21/762 ,  H01L27/10841

摘要： The side wall part of a recess dug in a Si substrate is used as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area. Thus, a desired capacitor capacitance can be attained without increasing the breakdown of an insulator film ascribable to the conventional approach of thinning of the insulator film. In addition, a vertical switching transistor is formed on the Si substrate, whereby the Si substrate can be entirely utilized for the formation of the capacitor.

公开(公告)号：US4354115A

公开(公告)日：1982-10-12

申请号：US211125

申请日：1980-11-28

申请人： Terunori Warabisako ,  Shigeo Shiono

发明人： Terunori Warabisako ,  Shigeo Shiono

IPC分类号： H01L31/10 ,  H01L31/02 ,  H01L31/042 ,  H01L31/12 ,  H01L31/16 ,  H01L31/04

CPC分类号： H04B10/801 ,  H01L31/035281 ,  H01L31/167 ,  Y02E10/50

摘要： A photo-coupler for electricity-light-electricity conversion comprising:(1) a light emitting part;(2) a photosensing device comprising a plurality of photosensing elements electrically connected in series in a light receiving surface of an insulating substrate, said photosensing elements being radially arrayed in said light receiving surface; and(3) a light guiding means optically coupling said light emitting part and said photosensing device,whereby light is emitted from said light emitting part and directed through said light guiding means to said photosensing device to generate a photoelectric conversion output.

摘要翻译： 一种用于电 - 光 - 电转换的光耦合器，包括：（1）发光部分; （2）一种感光装置，包括在绝缘基板的光接收表面串联电连接的多个感光元件，所述光敏元件在所述光接收表面中径向排列; 和（3）将所述发光部分和所述光敏装置光学耦合的导光装置，由此从所述发光部分发射光，并将光引导装置引导到所述光敏装置以产生光电转换输出。

公开(公告)号：US4683838A

公开(公告)日：1987-08-04

申请号：US750474

申请日：1985-07-01

申请人： Shin-Ichiro Kimura ,  Eiichi Murakami ,  Terunori Warabisako ,  Kiyoshi Miyake ,  Hideo Sunami

发明人： Shin-Ichiro Kimura ,  Eiichi Murakami ,  Terunori Warabisako ,  Kiyoshi Miyake ,  Hideo Sunami

IPC分类号： H01L21/302 ,  C23C14/22 ,  C23C14/32 ,  H01J37/32 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/32623 ,  C23C14/22 ,  C23C14/32 ,  H01J37/3266

摘要： An insulator film can be formed at a low temperature without any damage to a substrate to be treated by a plasma in a plasma treatment system which comprises a magnetron for generating a microwave, an isolator for isolating a wave guide from the magnetron, a discharge tube for generating a plasma, the wave guide for leading the microwave from the magnetron to the discharge tube, a vacuum chamber integrally formed together with the discharge tube, an evaporation source provided in the vacuum chamber, a substrate to be treated and provided at a position to sandwich a stream of the plasma between the substrate and the evaporation source, electromagnets provided around the discharge tube and the vacuum chamber, and a manipulator for manipulating the substrate, the electromagnets generating a magnetic field to confine the stream of the plasma.

摘要翻译： 可以在低温下形成绝缘膜，而不会对包括用于产生微波的磁控管的等离子体处理系统中的等离子体处理的基板造成任何损坏，用于将波导从磁控管隔离的隔离器，放电管 用于产生等离子体，用于将微波从磁控管引导到放电管的波导，与放电管一体形成的真空室，设置在真空室中的蒸发源，待处理的基板，并设置在位置 在基板和蒸发源之间夹着等离子体流，设置在放电管和真空室周围的电磁体以及用于操纵基板的操纵器，电磁体产生磁场以限制等离子体的流。

公开(公告)号：US4937641A

公开(公告)日：1990-06-26

申请号：US81142

申请日：1987-08-03

申请人： Hideo Sunami ,  Makoto Ohkura ,  Masanobu Miyao ,  Kikuo Kusukawa ,  Masahiro Moniwa ,  ShinIchiro Kimura ,  Terunori Warabisako ,  Tokuo Kure

发明人： Hideo Sunami ,  Makoto Ohkura ,  Masanobu Miyao ,  Kikuo Kusukawa ,  Masahiro Moniwa ,  ShinIchiro Kimura ,  Terunori Warabisako ,  Tokuo Kure

IPC分类号： H01L21/762 ,  H01L27/108

CPC分类号： H01L21/762 ,  H01L27/10841

摘要： The side wall part of a recess dug in a Si substrate is used as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area. Thus, a desired capacitor capacitance can be attained without increasing the breakdown of an insulator film ascribable to the conventional approach of thinning of the insulator film. In addition, a vertical switching transistor is formed on the Si substrate, whereby the Si substrate can be entirely utilized for the formation of the capacitor.

摘要翻译： 作为电容器的电极面的主要部分，使用在Si衬底中挖出的凹部的侧壁部分，由此电极面积扩大而不扩大平面面积。 因此，可以获得期望的电容器电容，而不会增加绝缘膜的破坏，这归因于传统的绝缘膜变薄的方法。 此外，在Si衬底上形成垂直开关晶体管，由此可以将Si衬底完全用于电容器的形成。