Nonvolatile programmable logic switch
    1.
    发明授权
    Nonvolatile programmable logic switch 有权
    非易失性可编程逻辑开关

    公开(公告)号:US08553464B2

    公开(公告)日:2013-10-08

    申请号:US13240087

    申请日:2011-09-22

    IPC分类号: G11C11/35

    摘要: An aspect of the present embodiment, there is provided a nonvolatile programmable logic switch including a first memory cell transistor, a second memory cell transistor, a pass transistor and a first substrate electrode applying a substrate voltage to the pass transistor, wherein a writing voltage is applied to the first wiring, a first voltage is applied to one of a second wiring and a third wiring and a second voltage which is lower than the first voltage is applied to the other of the second wiring and the third wiring, and the first substrate voltage which is higher than the second voltage and lower than the first voltage is applied to a well of the pass transistor, when data is written into the first memory cell transistor or the second memory cell transistor.

    摘要翻译: 本实施例的一个方面提供了一种非易失性可编程逻辑开关,包括第一存储单元晶体管,第二存储单元晶体管,传输晶体管和向该通过晶体管施加衬底电压的第一衬底电极,其中写入电压为 施加到第一布线,第一电压施加到第二布线和第三布线中的一个,并且低于第一电压的第二电压施加到第二布线和第三布线中的另一布线,第一基板 当数据被写入第一存储单元晶体管或第二存储单元晶体管时,高于第二电压并低于第一电压的电压被施加到传输晶体管的阱。

    METHOD AND APPARATUS FOR DESIGNING A THREE-DIMENSIONAL INTEGRATED CIRCUIT
    3.
    发明申请
    METHOD AND APPARATUS FOR DESIGNING A THREE-DIMENSIONAL INTEGRATED CIRCUIT 有权
    用于设计三维集成电路的方法和装置

    公开(公告)号:US20080244489A1

    公开(公告)日:2008-10-02

    申请号:US12047547

    申请日:2008-03-13

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5077 G06F17/5068

    摘要: A method of designing a three-dimensional integrated circuit includes dividing two-dimensional layout data of a circuit formed on a semiconductor substrate into a plurality of layout block data in order to re-arrange in different layers, generating layout block data reversing one of the layout block data of two folded layers arranged vertically adjacent to each other, alternately arranging the reversed layout block data and non-reverse block layout data to form a plurality of layers vertically overlapped, selecting at least one from interconnects included in a plurality of layout block data of the circuit and ranging over plural layers so as to be mutually and functionally collected together with respect to at least one of time delay, interconnect length and block configuration, and re-arranging the selected interconnect using a via connecting an upper layer and an under layer of the folded interconnect.

    摘要翻译: 一种设计三维集成电路的方法包括将形成在半导体衬底上的电路的二维布局数据划分成多个布局块数据,以便重新排列在不同的层中,生成布局块数据, 交替布置反向布局块数据和非反向块布局数据以形成垂直重叠的多个层的两个折叠层的布局块数据,从包括在多个布局块中的互连中选择至少一个层 电路的数据并且跨越多个层,以便相对于时间延迟,互连长度和块配置中的至少一个而相互和功能地收集在一起,并且使用连接上层和第二层的通孔重新布置所选择的互连 折叠互连的下层。

    METHOD FOR IMPLEMENTING CIRCUIT DESIGN FOR INTEGRATED CIRCUIT AND COMPUTER READABLE MEDIUM
    6.
    发明申请
    METHOD FOR IMPLEMENTING CIRCUIT DESIGN FOR INTEGRATED CIRCUIT AND COMPUTER READABLE MEDIUM 失效
    用于集成电路和计算机可读介质实现电路设计的方法

    公开(公告)号:US20130055189A1

    公开(公告)日:2013-02-28

    申请号:US13561483

    申请日:2012-07-30

    IPC分类号: G06F17/50

    摘要: In one embodiment, a method for implementing a circuit design for an integrated circuit includes: (a) obtaining a first wiring to satisfy a given operating frequency; (b) calculating a maximum bypass wiring length based on the given operating frequency and a critical path of the first wiring; (c) obtaining a second wiring by bypassing the first wiring using wires other than wires of the first wiring in a first wiring group, wherein wiring of the integrated circuit is categorized into a plurality of wiring groups, and the first wiring is included in the first wiring group of the categorized wiring groups; and (d) replacing the first wiring with the second wiring, if a difference between the second wiring and the first wiring is not larger than the maximum bypass wiring length, and not replacing the first wiring if said difference is larger than the maximum bypass wiring length.

    摘要翻译: 在一个实施例中,一种用于实现集成电路的电路设计的方法包括:(a)获得第一布线以满足给定的工作频率; (b)基于给定的工作频率和第一布线的关键路径计算最大旁路布线长度; (c)通过在第一布线组中使用不同于第一布线的布线的旁路第一布线来获得第二布线,其中集成电路的布线被分类为多个布线组,并且第一布线包括在第一布线中 分类布线组的第一接线组; 以及(d)如果所述第二布线和所述第一布线之间的差不大于所述最大旁路布线长度,则用所述第二布线代替所述第一布线,并且如果所述差大于所述最大旁路布线,则不更换所述第一布线 长度。

    Method and apparatus for designing a three-dimensional integrated circuit
    7.
    发明授权
    Method and apparatus for designing a three-dimensional integrated circuit 有权
    用于设计三维集成电路的方法和装置

    公开(公告)号:US07949984B2

    公开(公告)日:2011-05-24

    申请号:US12047547

    申请日:2008-03-13

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5077 G06F17/5068

    摘要: A method of designing a three-dimensional integrated circuit includes dividing two-dimensional layout data of a circuit formed on a semiconductor substrate into a plurality of layout block data in order to re-arrange in different layers, generating layout block data reversing one of the layout block data of two folded layers arranged vertically adjacent to each other, alternately arranging the reversed layout block data and non-reverse block layout data to form a plurality of layers vertically overlapped, selecting at least one from interconnects included in a plurality of layout block data of the circuit and ranging over plural layers so as to be mutually and functionally collected together with respect to at least one of time delay, interconnect length and block configuration, and re-arranging the selected interconnect using a via connecting an upper layer and an under layer of the folded interconnect.

    摘要翻译: 一种设计三维集成电路的方法包括将形成在半导体衬底上的电路的二维布局数据划分成多个布局块数据,以便重新排列在不同的层中,生成布局块数据, 交替布置反向布局块数据和非反向块布局数据以形成垂直重叠的多个层的两个折叠层的布局块数据,从包括在多个布局块中的互连中选择至少一个层 电路的数据并且跨越多个层,以便相对于时间延迟,互连长度和块配置中的至少一个而相互和功能地收集在一起,并且使用连接上层和第二层的通孔重新布置所选择的互连 折叠互连的下层。

    Method for implementing circuit design for integrated circuit and computer readable medium
    8.
    发明授权
    Method for implementing circuit design for integrated circuit and computer readable medium 失效
    集成电路和计算机可读介质电路设计实现方法

    公开(公告)号:US08578318B2

    公开(公告)日:2013-11-05

    申请号:US13561483

    申请日:2012-07-30

    IPC分类号: G06F17/50

    摘要: In one embodiment, a method for implementing a circuit design for an integrated circuit includes: (a) obtaining a first wiring to satisfy a given operating frequency; (b) calculating a maximum bypass wiring length based on the given operating frequency and a critical path of the first wiring; (c) obtaining a second wiring by bypassing the first wiring using wires other than wires of the first wiring in a first wiring group, wherein wiring of the integrated circuit is categorized into a plurality of wiring groups, and the first wiring is included in the first wiring group of the categorized wiring groups; and (d) replacing the first wiring with the second wiring, if a difference between the second wiring and the first wiring is not larger than the maximum bypass wiring length, and not replacing the first wiring if said difference is larger than the maximum bypass wiring length.

    摘要翻译: 在一个实施例中,一种用于实现集成电路的电路设计的方法包括:(a)获得第一布线以满足给定的工作频率; (b)基于给定的工作频率和第一布线的关键路径计算最大旁路布线长度; (c)通过在第一布线组中使用不同于第一布线的布线的旁路第一布线来获得第二布线,其中集成电路的布线被分类为多个布线组,并且第一布线包括在第一布线中 分类布线组的第一接线组; 以及(d)如果所述第二布线和所述第一布线之间的差不大于所述最大旁路布线长度,则用所述第二布线代替所述第一布线,并且如果所述差大于所述最大旁路布线,则不更换所述第一布线 长度。

    Random number generation apparatus
    9.
    发明授权
    Random number generation apparatus 有权
    随机数生成装置

    公开(公告)号:US08874631B2

    公开(公告)日:2014-10-28

    申请号:US12504998

    申请日:2009-07-17

    IPC分类号: G06F1/02 G06F7/58 H03B5/08

    CPC分类号: G06F7/588

    摘要: A random number generation apparatus includes: a random noise generation element comprising a source region and a drain region, a tunnel insulation film, a gate electrode, and a charge trap portion provided between the tunnel insulation film and the gate electrode and being capable of trapping charges, random noise being generated in a drain current flowing between the source region and the drain region on the basis of charges trapped in the charge trap portion; a random number conversion circuit for converting random noise generated from the random noise generation element to a random number; a first test circuit for performing a random number test to test quality of the random number output from the random number conversion circuit; and an initialization circuit for pulling out charges in the charge trap portion of the random noise generation element to the semiconductor substrate through the tunnel insulation film and thereby initializing the charge trap portion.

    摘要翻译: 随机数生成装置包括:包括源极区域和漏极区域的随机噪声产生元件,隧道绝缘膜,栅极电极和设置在隧道绝缘膜和栅极之间并且能够捕获的电荷陷阱部分 电荷,基于俘获在电荷陷阱部分中的电荷在在源极区和漏极区之间流动的漏极电流中产生随机噪声; 随机数转换电路,用于将从随机噪声产生元件产生的随机噪声转换为随机数; 第一测试电路,用于执行随机数测试以测试从随机数转换电路输出的随机数的质量; 以及初始化电路,用于通过隧道绝缘膜将随机噪声发生元件的电荷陷阱部分中的电荷提取到半导体衬底,从而初始化电荷陷阱部分。

    RANDOM NUMBER GENERATION APPARATUS
    10.
    发明申请
    RANDOM NUMBER GENERATION APPARATUS 有权
    随机数生成装置

    公开(公告)号:US20100057820A1

    公开(公告)日:2010-03-04

    申请号:US12504998

    申请日:2009-07-17

    IPC分类号: G06F7/58

    CPC分类号: G06F7/588

    摘要: A random number generation apparatus includes: a random noise generation element comprising a source region and a drain region, a tunnel insulation film, a gate electrode, and a charge trap portion provided between the tunnel insulation film and the gate electrode and being capable of trapping charges, random noise being generated in a drain current flowing between the source region and the drain region on the basis of charges trapped in the charge trap portion; a random number conversion circuit for converting random noise generated from the random noise generation element to a random number; a first test circuit for performing a random number test to test quality of the random number output from the random number conversion circuit; and an initialization circuit for pulling out charges in the charge trap portion of the random noise generation element to the semiconductor substrate through the tunnel insulation film and thereby initializing the charge trap portion.

    摘要翻译: 随机数生成装置包括:包括源极区域和漏极区域的随机噪声产生元件,隧道绝缘膜,栅极电极和设置在隧道绝缘膜和栅极之间并且能够捕获的电荷陷阱部分 电荷,基于俘获在电荷陷阱部分中的电荷在在源极区和漏极区之间流动的漏极电流中产生随机噪声; 随机数转换电路,用于将从随机噪声产生元件产生的随机噪声转换为随机数; 第一测试电路,用于执行随机数测试以测试从随机数转换电路输出的随机数的质量; 以及初始化电路,用于通过隧道绝缘膜将随机噪声发生元件的电荷陷阱部分中的电荷提取到半导体衬底,从而初始化电荷陷阱部分。