Nonvolatile programmable logic switch
    1.
    发明授权
    Nonvolatile programmable logic switch 有权
    非易失性可编程逻辑开关

    公开(公告)号:US08553464B2

    公开(公告)日:2013-10-08

    申请号:US13240087

    申请日:2011-09-22

    IPC分类号: G11C11/35

    摘要: An aspect of the present embodiment, there is provided a nonvolatile programmable logic switch including a first memory cell transistor, a second memory cell transistor, a pass transistor and a first substrate electrode applying a substrate voltage to the pass transistor, wherein a writing voltage is applied to the first wiring, a first voltage is applied to one of a second wiring and a third wiring and a second voltage which is lower than the first voltage is applied to the other of the second wiring and the third wiring, and the first substrate voltage which is higher than the second voltage and lower than the first voltage is applied to a well of the pass transistor, when data is written into the first memory cell transistor or the second memory cell transistor.

    摘要翻译: 本实施例的一个方面提供了一种非易失性可编程逻辑开关,包括第一存储单元晶体管,第二存储单元晶体管,传输晶体管和向该通过晶体管施加衬底电压的第一衬底电极,其中写入电压为 施加到第一布线,第一电压施加到第二布线和第三布线中的一个,并且低于第一电压的第二电压施加到第二布线和第三布线中的另一布线,第一基板 当数据被写入第一存储单元晶体管或第二存储单元晶体管时,高于第二电压并低于第一电压的电压被施加到传输晶体管的阱。

    Memory including transistors with double floating gate structures
    2.
    发明授权
    Memory including transistors with double floating gate structures 失效
    存储器包括具有双浮栅结构的晶体管

    公开(公告)号:US08610196B2

    公开(公告)日:2013-12-17

    申请号:US13608436

    申请日:2012-09-10

    IPC分类号: H01L27/11

    摘要: In a memory of an embodiment, first and second P-channel transistors are formed on a first semiconductor region, and each of the first and second P-channel transistors has a structure formed by stacking a first insulating film, a first floating gate, a second insulating film, a second floating gate, a third insulating film, and a first control gate in this order on the first semiconductor region. In the memory, first and second N-channel transistors are formed on a second semiconductor region, and each of the first and second N-channel transistors has a structure formed by stacking a fourth insulating film, a third floating gate, a fifth insulating film, a fourth floating gate, a sixth insulating film, and a second control gate in this order on the second semiconductor region.

    摘要翻译: 在实施例的存储器中,第一和第二P沟道晶体管形成在第一半导体区域上,并且第一和第二P沟道晶体管中的每一个具有通过堆叠第一绝缘膜,第一浮动栅极, 第二绝缘膜,第二浮栅,第三绝缘膜和第一控制栅极。 在存储器中,第一和第二N沟道晶体管形成在第二半导体区域上,并且第一和第二N沟道晶体管中的每一个具有通过堆叠第四绝缘膜,第三浮栅,第五绝缘膜 ,第四浮栅,第六绝缘膜和第二控制栅极。

    METHOD AND APPARATUS FOR DESIGNING A THREE-DIMENSIONAL INTEGRATED CIRCUIT
    4.
    发明申请
    METHOD AND APPARATUS FOR DESIGNING A THREE-DIMENSIONAL INTEGRATED CIRCUIT 有权
    用于设计三维集成电路的方法和装置

    公开(公告)号:US20080244489A1

    公开(公告)日:2008-10-02

    申请号:US12047547

    申请日:2008-03-13

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5077 G06F17/5068

    摘要: A method of designing a three-dimensional integrated circuit includes dividing two-dimensional layout data of a circuit formed on a semiconductor substrate into a plurality of layout block data in order to re-arrange in different layers, generating layout block data reversing one of the layout block data of two folded layers arranged vertically adjacent to each other, alternately arranging the reversed layout block data and non-reverse block layout data to form a plurality of layers vertically overlapped, selecting at least one from interconnects included in a plurality of layout block data of the circuit and ranging over plural layers so as to be mutually and functionally collected together with respect to at least one of time delay, interconnect length and block configuration, and re-arranging the selected interconnect using a via connecting an upper layer and an under layer of the folded interconnect.

    摘要翻译: 一种设计三维集成电路的方法包括将形成在半导体衬底上的电路的二维布局数据划分成多个布局块数据,以便重新排列在不同的层中,生成布局块数据, 交替布置反向布局块数据和非反向块布局数据以形成垂直重叠的多个层的两个折叠层的布局块数据,从包括在多个布局块中的互连中选择至少一个层 电路的数据并且跨越多个层,以便相对于时间延迟,互连长度和块配置中的至少一个而相互和功能地收集在一起,并且使用连接上层和第二层的通孔重新布置所选择的互连 折叠互连的下层。

    METHOD FOR IMPLEMENTING CIRCUIT DESIGN FOR INTEGRATED CIRCUIT AND COMPUTER READABLE MEDIUM
    7.
    发明申请
    METHOD FOR IMPLEMENTING CIRCUIT DESIGN FOR INTEGRATED CIRCUIT AND COMPUTER READABLE MEDIUM 失效
    用于集成电路和计算机可读介质实现电路设计的方法

    公开(公告)号:US20130055189A1

    公开(公告)日:2013-02-28

    申请号:US13561483

    申请日:2012-07-30

    IPC分类号: G06F17/50

    摘要: In one embodiment, a method for implementing a circuit design for an integrated circuit includes: (a) obtaining a first wiring to satisfy a given operating frequency; (b) calculating a maximum bypass wiring length based on the given operating frequency and a critical path of the first wiring; (c) obtaining a second wiring by bypassing the first wiring using wires other than wires of the first wiring in a first wiring group, wherein wiring of the integrated circuit is categorized into a plurality of wiring groups, and the first wiring is included in the first wiring group of the categorized wiring groups; and (d) replacing the first wiring with the second wiring, if a difference between the second wiring and the first wiring is not larger than the maximum bypass wiring length, and not replacing the first wiring if said difference is larger than the maximum bypass wiring length.

    摘要翻译: 在一个实施例中,一种用于实现集成电路的电路设计的方法包括:(a)获得第一布线以满足给定的工作频率; (b)基于给定的工作频率和第一布线的关键路径计算最大旁路布线长度; (c)通过在第一布线组中使用不同于第一布线的布线的旁路第一布线来获得第二布线,其中集成电路的布线被分类为多个布线组,并且第一布线包括在第一布线中 分类布线组的第一接线组; 以及(d)如果所述第二布线和所述第一布线之间的差不大于所述最大旁路布线长度,则用所述第二布线代替所述第一布线,并且如果所述差大于所述最大旁路布线,则不更换所述第一布线 长度。

    Method and apparatus for designing a three-dimensional integrated circuit
    8.
    发明授权
    Method and apparatus for designing a three-dimensional integrated circuit 有权
    用于设计三维集成电路的方法和装置

    公开(公告)号:US07949984B2

    公开(公告)日:2011-05-24

    申请号:US12047547

    申请日:2008-03-13

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5077 G06F17/5068

    摘要: A method of designing a three-dimensional integrated circuit includes dividing two-dimensional layout data of a circuit formed on a semiconductor substrate into a plurality of layout block data in order to re-arrange in different layers, generating layout block data reversing one of the layout block data of two folded layers arranged vertically adjacent to each other, alternately arranging the reversed layout block data and non-reverse block layout data to form a plurality of layers vertically overlapped, selecting at least one from interconnects included in a plurality of layout block data of the circuit and ranging over plural layers so as to be mutually and functionally collected together with respect to at least one of time delay, interconnect length and block configuration, and re-arranging the selected interconnect using a via connecting an upper layer and an under layer of the folded interconnect.

    摘要翻译: 一种设计三维集成电路的方法包括将形成在半导体衬底上的电路的二维布局数据划分成多个布局块数据,以便重新排列在不同的层中,生成布局块数据, 交替布置反向布局块数据和非反向块布局数据以形成垂直重叠的多个层的两个折叠层的布局块数据,从包括在多个布局块中的互连中选择至少一个层 电路的数据并且跨越多个层,以便相对于时间延迟,互连长度和块配置中的至少一个而相互和功能地收集在一起,并且使用连接上层和第二层的通孔重新布置所选择的互连 折叠互连的下层。

    Method for implementing circuit design for integrated circuit and computer readable medium
    9.
    发明授权
    Method for implementing circuit design for integrated circuit and computer readable medium 失效
    集成电路和计算机可读介质电路设计实现方法

    公开(公告)号:US08578318B2

    公开(公告)日:2013-11-05

    申请号:US13561483

    申请日:2012-07-30

    IPC分类号: G06F17/50

    摘要: In one embodiment, a method for implementing a circuit design for an integrated circuit includes: (a) obtaining a first wiring to satisfy a given operating frequency; (b) calculating a maximum bypass wiring length based on the given operating frequency and a critical path of the first wiring; (c) obtaining a second wiring by bypassing the first wiring using wires other than wires of the first wiring in a first wiring group, wherein wiring of the integrated circuit is categorized into a plurality of wiring groups, and the first wiring is included in the first wiring group of the categorized wiring groups; and (d) replacing the first wiring with the second wiring, if a difference between the second wiring and the first wiring is not larger than the maximum bypass wiring length, and not replacing the first wiring if said difference is larger than the maximum bypass wiring length.

    摘要翻译: 在一个实施例中,一种用于实现集成电路的电路设计的方法包括:(a)获得第一布线以满足给定的工作频率; (b)基于给定的工作频率和第一布线的关键路径计算最大旁路布线长度; (c)通过在第一布线组中使用不同于第一布线的布线的旁路第一布线来获得第二布线,其中集成电路的布线被分类为多个布线组,并且第一布线包括在第一布线中 分类布线组的第一接线组; 以及(d)如果所述第二布线和所述第一布线之间的差不大于所述最大旁路布线长度,则用所述第二布线代替所述第一布线,并且如果所述差大于所述最大旁路布线,则不更换所述第一布线 长度。

    ANALOG-TO-DIGITAL CONVERTER
    10.
    发明申请
    ANALOG-TO-DIGITAL CONVERTER 失效
    模拟数字转换器

    公开(公告)号:US20130076551A1

    公开(公告)日:2013-03-28

    申请号:US13535118

    申请日:2012-06-27

    IPC分类号: H03M1/36

    摘要: According to an embodiment, an analog-to-digital converter includes a voltage generating unit to generate comparative voltages; and comparators. Each comparator compares any one of the comparative voltages with an analog input voltage and output a digital signal. Each comparator includes a differential pair circuit to detect a potential difference between two inputs. The differential pair circuit includes first and second circuit portions. The first circuit portion includes a first transistor having a gate to which one input is supplied; and a resistor connected in series with the first transistor. The second circuit portion includes a second transistor having a gate to which the other input is supplied and forms a differential pair with the first transistor; and a variable resistor connected in series with the second transistor. The variable resistor includes variable resistive elements each having a resistance value variably set according to a control signal.

    摘要翻译: 根据实施例,模数转换器包括产生比较电压的电压产生单元; 和比较者。 每个比较器将比较电压中的任何一个与模拟输入电压进行比较,并输出数字信号。 每个比较器包括用于检测两个输入之间的电位差的差分对电路。 差分对电路包括第一和第二电路部分。 第一电路部分包括具有一个输入端的栅极的第一晶体管; 以及与第一晶体管串联连接的电阻器。 第二电路部分包括第二晶体管,其具有提供另一输入的栅极,并与第一晶体管形成差分对; 以及与第二晶体管串联连接的可变电阻器。 可变电阻器包括可变电阻元件,每个电阻元件具有根据控制信号可变地设置的电阻值。