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1.发明申请NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT 有权非易失性存储元件，其制造方法和使用非易失性存储元件的非易失性半导体器件公开(公告)号：US20110294259A1
公开(公告)日：2011-12-01
申请号：US13205408
申请日：2011-08-08
申请人： Yoshihiko KANZAWA , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko KANZAWA , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L21/36
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译： 非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻 电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽， 由TaOx（0
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2.发明授权Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element 有权非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置公开(公告)号：US08445319B2
公开(公告)日：2013-05-21
申请号：US13205408
申请日：2011-08-08
申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译： 非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻 电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽， 由TaOx（0
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3.发明授权Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element 有权非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置公开(公告)号：US08022502B2
公开(公告)日：2011-09-20
申请号：US12307211
申请日：2008-03-26
申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译： 非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻 电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽， 由TaOx（0
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4.发明授权Nonvolatile memory element, nonvolatile memory apparatus, nonvolatile semiconductor apparatus, and method of manufacturing nonvolatile memory element 有权非易失性存储元件，非易失性存储装置，非易失性半导体装置以及制造非易失性存储元件的方法公开(公告)号：US09236381B2
公开(公告)日：2016-01-12
申请号：US12307032
申请日：2007-10-24
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (104), a resistance value of the resistance variable layer varying reversibly according to an electric signal applied between the electrodes (103), (105), and the resistance variable layer (104) comprises at least a tantalum oxide, and is configured to satisfy 0
摘要翻译： 本发明的非易失性存储元件包括第一电极（103），第二电极（105）和设置在第一电极（103）和第二电极（104）之间的电阻变化层（104），电阻值 根据施加在电极（103），（105）和电阻变化层（104）之间的电信号可逆地改变的电阻变化层至少包括氧化钽，并且被配置为满足0
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5.发明授权Nonvolatile memory element, nonvolatile semiconductor memory apparatus, and reading method and writing method therefor 有权非易失性存储元件，非易失性半导体存储器件及其读取方法和写入方法公开(公告)号：US07965539B2
公开(公告)日：2011-06-21
申请号：US12516703
申请日：2008-09-25
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , G11C7/1006 , G11C13/0007 , G11C2013/0076 , G11C2213/32 , G11C2213/34 , G11C2213/79
摘要： A nonvolatile memory element (101) of the present invention includes a resistance variable layer (112) which intervenes between a first electrode (111) and a second electrode (113) and is configured to include at least an oxide of a metal element of VI group, V group or VI group, and when an electric pulse of a specific voltage is applied between the first voltage (111) and the second voltage (113), the resistance variable layer is turned to have a first high-resistance state or a second high-resistance state in which its resistance value is a high-resistance value RH, or a low-resistance state in which its resistance value is a low-resistance value RL.
摘要翻译： 本发明的非易失性存储元件（101）包括介于第一电极（111）和第二电极（113）之间的电阻变化层（112），并且被配置为至少包含VI的金属元素的氧化物 组，V组或VI组，并且当在第一电压（111）和第二电压（113）之间施加特定电压的电脉冲时，电阻变化层转为具有第一高电阻状态或 其电阻值为高电阻值RH的第二高电阻状态或其电阻值为低电阻值RL的低电阻状态。
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6.发明申请NONVOLATILE MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS, AND READING METHOD AND WRITING METHOD THEREFOR 有权非易失性存储器元件，非易失性半导体存储器件及其读取方法及其写入方法公开(公告)号：US20100271859A1
公开(公告)日：2010-10-28
申请号：US12516703
申请日：2008-09-25
CPC分类号： H01L27/101 , G11C7/1006 , G11C13/0007 , G11C2013/0076 , G11C2213/32 , G11C2213/34 , G11C2213/79
摘要： A nonvolatile memory element (101) of the present invention comprises a resistance variable layer (112) which intervenes between a first electrode (111) and a second electrode (113) and is configured to include at least an oxide of a metal element of VI group, V group or VI group, and when an electric pulse of a specific voltage is applied between the first voltage (111) and the second voltage (113), the resistance variable layer is turned to have a first high-resistance state or a second high-resistance state in which its resistance value is a high-resistance value RH, or a low-resistance state in which its resistance value is a low-resistance value RL.
摘要翻译： 本发明的非易失性存储元件（101）包括介于第一电极（111）和第二电极（113）之间的电阻变化层（112），并且被配置为至少包含VI的金属元素的氧化物 组，V组或VI组，并且当在第一电压（111）和第二电压（113）之间施加特定电压的电脉冲时，电阻变化层转为具有第一高电阻状态或 其电阻值为高电阻值RH的第二高电阻状态或其电阻值为低电阻值RL的低电阻状态。
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7.发明申请NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, NONVOLATILE SEMICONDUCTOR APPARATUS, AND METHOD OF MANUFACTURING NONVOLATILE MEMORY ELEMENT 有权非易失性存储元件，非易失性存储器件，非易失性半导体器件及其制造非易失性存储器元件的方法公开(公告)号：US20090224224A1
公开(公告)日：2009-09-10
申请号：US12307032
申请日：2007-10-24
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (104), a resistance value of the resistance variable layer varying reversibly according to an electric signal applied between the electrodes (103),(105), and the resistance variable layer (104) comprises at least a tantalum oxide, and is configured to satisfy 0
摘要翻译： 本发明的非易失性存储元件包括第一电极（103），第二电极（105）和设置在第一电极（103）和第二电极（104）之间的电阻变化层（104），电阻值 根据施加在电极（103），（105）和电阻变化层（104）之间的电信号可逆地改变的电阻变化层至少包括氧化钽，并且被配置为满足0
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公开(公告)号：US20090321709A1
公开(公告)日：2009-12-31
申请号：US12376256
申请日：2007-08-17
申请人： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
发明人： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , G11C2213/32 , G11C2213/55 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/1683
摘要： A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.
摘要翻译： 存储元件包括第一电极，第二电极和电阻可变膜2，电阻可变膜2设置在与第一和第二电极连接的第一和第二电极之间，电阻变化膜2的电阻值基于电压变化 电阻可变膜2包括由Fe 3 O 4制成的层2a和由Fe 2 O 3制成的层2b或以MFe 2 O 4表示的尖晶石结构氧化物（M：除了Fe之外的金属元素）; 由Fe 3 O 4制成的层2a比由Fe 2 O 3或尖晶石结构氧化物制成的层2b厚。
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公开(公告)号：US07964869B2
公开(公告)日：2011-06-21
申请号：US12376256
申请日：2007-08-17
申请人： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
发明人： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
IPC分类号： H01L29/10
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , G11C2213/32 , G11C2213/55 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/1683
摘要： A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.
摘要翻译： 存储元件包括第一电极，第二电极和电阻可变膜2，电阻可变膜2设置在与第一和第二电极连接的第一和第二电极之间，电阻变化膜2的电阻值基于电压变化 电阻可变膜2包括由Fe 3 O 4制成的层2a和由Fe 2 O 3制成的层2b或以MFe 2 O 4表示的尖晶石结构氧化物（M：除了Fe之外的金属元素）; 由Fe 3 O 4制成的层2a比由Fe 2 O 3或尖晶石结构氧化物制成的层2b厚。
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10.发明申请NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE ELEMENT ARRAY 有权非易失性存储设备，非易失性存储元件和非易失性元件阵列公开(公告)号：US20090250678A1
公开(公告)日：2009-10-08
申请号：US12302468
申请日：2008-03-27
申请人： Koichi Osano , Satoru Fujii , Shunsaku Muraoka
发明人： Koichi Osano , Satoru Fujii , Shunsaku Muraoka
CPC分类号： G11C13/003 , G11C13/0007 , G11C2213/32 , G11C2213/74 , G11C2213/76 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , Y10S257/904 , Y10S257/924
摘要： A nonvolatile memory apparatus comprises a first electrode (111), a second electrode (112), a variable resistance layer (113) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes, a first terminal (103) connected to the first electrode, and a second terminal (104) connected to the second terminal. The variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0
摘要翻译： 非易失性存储装置包括第一电极（111），第二电极（112），设置在电极之间的可变电阻层（113），可变电阻层的电阻值在多个电阻状态之间可逆地变化 在施加在电极之间的电信号上，连接到第一电极的第一端子（103）和连接到第二电极的第二端子（104）。 可变电阻层至少包含氧化钽，并且当钽氧化物由TaOx表示时，其被配置为满足0
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