公开(公告)号：US07501293B2

公开(公告)日：2009-03-10

申请号：US10518945

申请日：2003-06-04

申请人： Yoshihiro Ito ,  Michio Kadota

发明人： Yoshihiro Ito ,  Michio Kadota

IPC分类号： H01L29/24 ,  H01L21/00

CPC分类号： H01L29/7869 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L33/28 ,  H01S5/327

摘要： A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer) primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrate. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.

摘要翻译： 具有优异的结晶性和优异的电特性的半导体器件包括具有优异表面平滑度的ZnO薄膜。 主要包括ZnO的ZnO基薄膜（n型接触层，n型覆盖层，有源层，p型覆盖层和p型接触层）依次通过ECR溅射法 或其他合适的方法在ZnO基底的锌极性表面上。 在p型接触层的表面上通过蒸发法或其它合适的方法形成透明电极和p侧电极，在ZnO基板的氧极性面上形成n侧电极。

公开(公告)号：US20060054888A1

公开(公告)日：2006-03-16

申请号：US10518945

申请日：2003-06-04

申请人： Yoshihiro Ito ,  Michio Kadota

发明人： Yoshihiro Ito ,  Michio Kadota

IPC分类号： H01L29/12 ,  H01L21/00

CPC分类号： H01L29/7869 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L33/28 ,  H01S5/327

摘要： A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrates. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.

摘要翻译： 具有优异的结晶性和优异的电特性的半导体器件包括具有优异表面平滑度的ZnO薄膜。 通过ECR溅射法依次形成ZnO类薄膜（n型接触层，n型覆盖层，有源层，p型覆盖层和主要包含ZnO的p型接触层） 在ZnO基板的锌极性表面上的其他合适的方法，在p型接触层的表面上通过蒸发法或其它合适的方法形成透明电极和p侧电极，以及n侧电极 形成在ZnO基板的氧极性表面上。

公开(公告)号：US06847154B2

公开(公告)日：2005-01-25

申请号：US10255968

申请日：2002-09-27

申请人： Yoshihiro Ito ,  Michio Kadota ,  Koji Fujimoto

发明人： Yoshihiro Ito ,  Michio Kadota ,  Koji Fujimoto

IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  H03H9/64

CPC分类号： H03H9/14552 ,  H03H9/02543 ,  H03H9/6496

摘要： A Shear Horizontal-type end-surface-reflection-type surface acoustic wave device includes a piezoelectric substrate having end surfaces. The most appropriate positions of the end surfaces of the piezoelectric substrate are determined. Interdigital transducers are disposed on the main surface of the piezoelectric substrate having a comparatively low relative dielectric constant ∈11T (for example, a relative dielectric constant of about 40 or less). The positions of the end surfaces are determined so that the distance from the center of the second electrode finger, counting from the outermost side in the surface acoustic wave propagation direction among the interdigital transducers, to the end surfaces (end surfaces for reflecting the surface acoustic wave) of the piezoelectric substrate satisfy the relationship (N+⅝)λs≦L≦(N+⅞)λs, where λs is the wavelength of the surface acoustic wave, and N is 0 or a positive integer.

摘要翻译： 剪切水平型端面反射型表面声波装置包括具有端面的压电基板。 确定压电基片的端面最合适的位置。 叉指换能器设置在压电基片的相对介电常数ε11（例如相对介电常数约为40或更小）的主表面上。 端面的位置被确定为使得从叉指式换能器之间的表面声波传播方向上的最外侧的第二电极指的中心到端面（用于反射表面声学的端面） （N + 5/8）lambdas <= L <=（N + 7/8）lambdas，其中lambdas是表面声波的波长，N是0或正整数 。

公开(公告)号：US20120256522A1

公开(公告)日：2012-10-11

申请号：US13528879

申请日：2012-06-21

申请人： Shigeo ITO ,  Yoshihiro Ito ,  Michio Kadota

发明人： Shigeo ITO ,  Yoshihiro Ito ,  Michio Kadota

IPC分类号： H01L41/047 ,  H01L41/22

CPC分类号： G01R33/02 ,  G01R33/0052 ,  Y10T29/42

摘要： A magnetic sensor device includes a piezoelectric substrate and an IDT electrode disposed on the piezoelectric substrate. At least a portion of the IDT electrode is made of a ferromagnetic metal and the duty ratio of the IDT electrode is higher than about 0.5 and lower than or equal to about 0.99.

摘要翻译： 磁传感器装置包括压电基片和设置在压电基片上的IDT电极。 IDT电极的至少一部分由铁磁性金属制成，IDT电极的占空比高于约0.5且低于或等于约0.99。

公开(公告)号：US08677582B2

公开(公告)日：2014-03-25

申请号：US12706051

申请日：2010-02-16

申请人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

发明人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

IPC分类号： H03H3/04

CPC分类号： H03H9/02834 ,  H03H3/10 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49165

摘要： A method for fabricating an acoustic wave device includes the steps of forming an insulating material layer on a piezoelectric substrate, forming a patterned photoresist on the insulating material layer, patterning the insulating material layer, and forming a piezoelectric-substrate exposed depression corresponding to a region where an interdigital transducer electrode is to be formed on a first insulator layer composed of the insulating material layer, depositing a metallic material on the piezoelectric substrate to form the interdigital transducer electrode in the piezoelectric-substrate exposed depression such that the overall interdigital transducer electrode is thinner than the first insulator layer and coating the photoresist with a metallic material, removing the photoresist and the metallic material on the photoresist, and depositing a second insulator layer so as to cover the interdigital transducer electrode and the first insulator layer.

摘要翻译： 一种制造声波器件的方法包括以下步骤：在压电衬底上形成绝缘材料层，在绝缘材料层上形成图案化的光致抗蚀剂，图案化绝缘材料层，形成压电衬底暴露的与区域相对应的凹陷 其中在由绝缘材料层构成的第一绝缘体层上形成叉指式换能器电极，在压电基板上沉积金属材料，以在压电基板暴露的凹陷中形成叉指式换能器电极，使得整个叉指式换能器电极为 比第一绝缘体层薄，并用金属材料涂覆光致抗蚀剂，去除光致抗蚀剂上的光致抗蚀剂和金属材料，并沉积第二绝缘体层以覆盖叉指式换能器电极和第一绝缘体层。

公开(公告)号：US08658097B2

公开(公告)日：2014-02-25

申请号：US12273569

申请日：2008-11-19

申请人： Kenjiro Okaguchi ,  Takuo Hada ,  Michio Kadota

发明人： Kenjiro Okaguchi ,  Takuo Hada ,  Michio Kadota

IPC分类号： G01N15/06 ,  G01N21/75

CPC分类号： G01N29/022 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423

摘要： A sensor for detecting a substance in liquid includes a sensing circuit including a sensing surface acoustic wave (SAW) element in which a reaction film to react with a substance in liquid, a reference circuit including a reference SAW element including an IDT and not including a reaction film, a first signal source driving the sensing circuit, a second signal source driving the reference circuit and being independent of the first signal source, and a differential circuit arranged to output a differential output between an output of the sensing circuit and an output of the reference circuit. The frequency of a first frequency signal output from the first signal source is different from the frequency of a second frequency signal output from the second signal source, thereby making a driving frequency for the sensing SAW element and a driving frequency for the reference SAW element substantially the same as or different from one another.

摘要翻译： 用于检测液体中的物质的传感器包括感测电路，其包括感测声表面波（SAW）元件，其中反应膜与液体中的物质反应，参考电路包括包括IDT的参考SAW元件，并且不包括 反应膜，驱动感测电路的第一信号源，驱动参考电路并独立于第一信号源的第二信号源，以及差分电路，布置成在感测电路的输出和输出之间输出差分输出 参考电路。 从第一信号源输出的第一频率信号的频率与从第二信号源输出的第二频率信号的频率不同，从而使感测用SAW元件的驱动频率和基准SAW元件的驱动频率基本上 彼此相同或不同。

公开(公告)号：US08305163B2

公开(公告)日：2012-11-06

申请号：US13096026

申请日：2011-04-28

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H03H9/64

CPC分类号： H03H9/02834 ,  H03H9/02653 ,  H03H9/25 ,  H03H9/6403 ,  H03H9/6483

摘要： A tunable filter includes a surface acoustic wave resonator, in which an IDT electrode is defined by an electrode material provided in a recess in an upper surface of a piezoelectric substrate made of LiNbO3 or LiTaO3, and a ZnO film is arranged to cover the upper surface of the piezoelectric substrate, and variable capacitors connected with the surface acoustic wave resonator.

摘要翻译： 可调滤波器包括表面声波谐振器，其中IDT电极由设置在由LiNbO 3或LiTaO 3制成的压电基板的上表面的凹部中的电极材料限定，并且ZnO膜被布置成覆盖上表面 的压电基板和与表面声波谐振器连接的可变电容器。

公开(公告)号：US08304959B2

公开(公告)日：2012-11-06

申请号：US13424462

申请日：2012-03-20

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02574 ,  H03H9/02559

摘要： A surface acoustic wave device includes a piezoelectric substrate including an R-plane, a-plane, or m-plane sapphire substrate and a LiNbO3 film of (90°, 90°, −15° to 15°) or (0°, 90°, −15° to 15°) in terms of Euler angles (φ, θ, Ψ) disposed on the sapphire substrate, and electrodes disposed on the piezoelectric substrate and made of metal.

摘要翻译： 表面声波装置包括：包括R平面，a面或m面蓝宝石衬底和（90°，90°，-15°至15°）或（0°，90°）的LiNbO 3膜的压电衬底 设置在蓝宝石衬底上的欧拉角（＆Phgr;＆amp;Θ;Ψ），以及设置在压电衬底上并由金属制成的电极。

公开(公告)号：US07327071B2

公开(公告)日：2008-02-05

申请号：US11469505

申请日：2006-09-01

申请人： Kenji Nishiyama ,  Eiichi Takata ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Eiichi Takata ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H3/08 ,  H03H9/02984 ,  H03H9/14538 ,  H03H9/25

摘要： A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.

摘要翻译： 表面声波装置包括由机电系数为约15％以上的由LiT 3 O 3或LiNbO 3 3制成的压电基板，至少一个电极设置在 压电基板，其是具有金属层的层压膜，该金属层限定主要由密度高于Al的金属或金属和金属层的合金的主金属层构成的金属层，所述金属层与层叠在所述主金属层上的金属层的合金， 由另一种金属和第一SiO 2层构成，第一SiO 2层设置在除了至少一个电极所位于的其余区域之外的其余区域中，并且具有与电极的厚度大致相等的厚度 。 在上述表面声波装置中，电极的密度为第一SiO 2层的密度的至少约1.5倍。 此外，设置成覆盖电极和第一SiO 2层的第二SiO 2层和设置在第二SiO 2层上的氮化硅化合物层 进一步提供层。

公开(公告)号：US20070252475A1

公开(公告)日：2007-11-01

申请号：US10595317

申请日：2004-09-08

申请人： Kenjiro Okaguchi ,  Koji Fujimoto ,  Michio Kadota

发明人： Kenjiro Okaguchi ,  Koji Fujimoto ,  Michio Kadota

IPC分类号： G01N29/02

CPC分类号： G01N29/36 ,  G01N29/022 ,  G01N29/2462 ,  G01N2291/014 ,  G01N2291/0256 ,  G01N2291/0423 ,  H03B5/326 ,  H03B5/362

摘要： A surface-acoustic-wave-sensor-included oscillator circuit does not cause separation of an electrode film due to application of a bias voltage and can reliably accurate operate even if liquid is adhered thereto. The surface-acoustic-wave-sensor-included oscillator circuit includes interdigital electrode disposed on a piezoelectric substrate and a reaction film that is arranged so as to cover the interdigital electrodes and bound to a target substance or a binding material to be bound to the target substance. A surface acoustic wave sensor that is capable of detecting a bit of mass loading on the basis of a variation in frequency is connected as a resonator in the surface-acoustic-wave-sensor-included oscillator circuit. Direct-current cutting capacitors are connected in series to the surface acoustic wave sensor, and the direct-current cutting capacitors respectively define impedance matching circuits in the surface-acoustic-wave-sensor-included oscillator circuit.

摘要翻译： 包含表面声波传感器的振荡电路不会由于施加偏压而引起电极膜的分离，即使液体粘附在其上也能够可靠地进行精确的动作。 包含表面声波传感器的振荡电路包括布置在压电基片上的叉指式电极和反射膜，该反射膜布置成覆盖指状电极并结合到靶物质或结合材料上以与目标物结合 物质。 能够在基于频率变化的基础上检测质量负载量的表面声波传感器作为共振器连接在包含表面声波传感器的振荡电路中。 直流切割电容器与表面声波传感器串联连接，直流切断电容器分别在包含表面声波传感器的振荡电路中形成阻抗匹配电路。