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    Etching method and apparatus for semiconductor wafers
    6.
    发明授权
    Etching method and apparatus for semiconductor wafers 失效
    半导体晶片的蚀刻方法和装置

    公开(公告)号：US07097784B2

    公开(公告)日：2006-08-29

    申请号：US10742992

    申请日：2003-12-23

    申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    IPC分类号： B44C1/22 ,  C03C15/00

    CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

    摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

    摘要翻译： 一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法，包括选择适合于半导体晶片的蚀刻的预定蚀刻程序，将半导体晶片的数量计数为 在蚀刻之前将其装入蚀刻液中，基于计数得出蚀刻剂的温度下降，将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电，以蚀刻半导体晶片，并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。

    Etching method and apparatus for semiconductor wafers
    7.
    发明申请
    Etching method and apparatus for semiconductor wafers 审中-公开

    公开(公告)号：US20060255014A1

    公开(公告)日：2006-11-16

    申请号：US11490054

    申请日：2006-07-21

    申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    IPC分类号： C03C15/00 ,  H01L21/302 ,  B44C1/22

    CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

    摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

    APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE
    8.
    发明申请
    APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE 审中-公开
    装置和处理半导体基板表面的方法

    公开(公告)号：US20110143545A1

    公开(公告)日：2011-06-16

    申请号：US12879097

    申请日：2010-09-10

    申请人： Hisashi OKUCHI ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hiroshi Tomita

    发明人： Hisashi OKUCHI ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hiroshi Tomita

    IPC分类号： H01L21/306 ,  B08B3/00

    CPC分类号： H01L21/02057 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051

    摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit which holds a semiconductor substrate with a surface having a convex pattern formed thereon and rotates the semiconductor substrate, a first supply unit which supplies a chemical and/or pure water to the surface of the semiconductor substrate, and a second supply unit which supplies a diluted water repellent to the surface of the semiconductor substrate to form a water-repellent protective film on the surface of the convex pattern. The second supply unit comprises a buffer tank which stores the water repellent, a first supply line which supplies a purge gas to the buffer tank, a second supply line which supplies a diluent, a pump which sends off the water repellent within the buffer tank, a third supply line which supplies the water repellent sent off from the pump, and a mixing valve which mixes the diluent and the water repellent to produce the diluted water repellent.

    摘要翻译： 在一个实施例中，处理半导体衬底的表面的设备包括：衬底保持和旋转单元，其保持具有形成在其上的凸起图案的表面的半导体衬底，并使半导体衬底旋转，提供化学品的第一供应单元和 /或纯水，以及第二供给单元，其向半导体基板的表面供给稀释斥水剂，以在凸形图案的表面上形成防水保护膜。 第二供应单元包括缓冲罐，其存储防水剂，向缓冲罐供应净化气体的第一供应管线，供应稀释剂的第二供应管线，在缓冲罐内排出拒水剂的泵， 供给从泵送出的防水剂的第三供给管路和将稀释剂与防水剂混合而制成稀释斥水剂的混合阀。

    FILTER, SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
    9.
    发明申请
    FILTER, SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD 审中-公开
    过滤器，基板处理装置和基板处理方法

    公开(公告)号：US20090317980A1

    公开(公告)日：2009-12-24

    申请号：US12548814

    申请日：2009-08-27

    申请人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

    发明人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67086 ,  H01L21/30604 ,  H01L21/31111

    摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes:a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate;an H2O adding port which permits the addition of H2O;a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; anda protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.

    摘要翻译： 一种可连接到外部循环系统的过滤器，该循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，该过滤器包括：化学物质进料口，其允许含有由于蚀刻所沉积的颗粒的H 3 PO 4溶液进料 基质; 一个允许加入H 2 O的H 2 O加入口; 通过加入H 2 O使热分布不均匀的H 3 PO 4溶液除去颗粒的过滤膜; 以及保护构件，其设置在H 2 O添加口和过滤膜之间，并且保护过滤膜免于通过加入H 2 O引起的H 3 PO 4溶液的撞击。

    Filter, substrate treatment apparatus and substrate treatment method
    10.
    发明申请
    Filter, substrate treatment apparatus and substrate treatment method 审中-公开
    过滤器，基板处理装置及基板处理方法

    公开(公告)号：US20050211378A1

    公开(公告)日：2005-09-29

    申请号：US11076231

    申请日：2005-03-10

    申请人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

    发明人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

    IPC分类号： H01L21/306 ,  C23F1/00 ,  H01L21/00 ,  H01L21/311

    CPC分类号： H01L21/67086 ,  H01L21/30604 ,  H01L21/31111

    摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes: a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate; an H2O adding port which permits the addition of H2O; a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; and a protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.

    摘要翻译： 一种可连接到外部循环系统的过滤器，所述循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，所述过滤器包括： 化学品供给口，其允许由于蚀刻基材而沉积的含有3个/ 3个PO 4的溶液的进料; 允许加入H 2 O的H 2 O 2添加口; 过滤膜，其通过添加H 2 O 2从热分布不均匀的H 3 PO 4 溶液中除去颗粒; 以及保护构件，其设置在H 2 O 2添加口和过滤膜之间，并且保护过滤膜免受H 3 PO 4加成口的冲击， / SUB溶液，其通过加入H 2 O 2可以引起。