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334 条记录 (耗时 0.025 秒)

    Wafer drying apparatus and method with residual particle removability enhancement
    6.
    发明授权
    Wafer drying apparatus and method with residual particle removability enhancement 失效
    晶圆干燥装置和残留颗粒去除性提高方法

    公开(公告)号：US06286524B1

    公开(公告)日：2001-09-11

    申请号：US09257384

    申请日：1999-02-25

    申请人： Hisashi Okuchi ,  Hiroshi Tomita ,  Soichi Nadahara ,  Katsuya Okumura

    发明人： Hisashi Okuchi ,  Hiroshi Tomita ,  Soichi Nadahara ,  Katsuya Okumura

    IPC分类号： B08B704

    CPC分类号： H01L21/67034 ,  Y10S134/902

    摘要： A wafer dry cleaning method and apparatus capable of eliminating or suppressing adhesion of dust and particles on dried wafer surfaces while minimizing generation of water marks thereon. To achive this, the wafer dryer apparatus is configured including a surface cleaning/drying chamber structure which houses therein a set of spaced-apart silicon wafer workpieces. The dry chamber is operatively associated with a vacuum evacuation device for retaining the interior of this chamber at low pressures required. A water-drain device is provided for forcing water content separated off from the wafer surfaces to drain out of the drying vessel. During such wafer drying process, the wafers may be driven rotating at high speeds to thereby accelerate centrifugal spin-off of residual drops of water on wafer surfaces. Preferably, a chosen purge gas may be fed into the chamber during wafer rotation. The purge gas supply gets started substantially simultaneously upon activation of a vacuum pump for chamber evacuation, or after completion of such vacuum evacuation. In one illustrative embodiment ultrapure water may be used to rinse the wafers in the chamber.

    摘要翻译： 一种晶片干洗方法和装置，其能够消除或抑制灰尘和颗粒在干燥的晶片表面上的粘附，同时最小化其上的水痕的产生。 为了实现这一点，晶片干燥装置被构造成包括其中容纳一组间隔开的硅晶片工件的表面清洁/干燥室结构。 干燥室与真空排气装置可操作地相关联，用于将该室的内部保持在所需的低压。 设置排水装置，用于迫使从晶片表面分离的含水量从干燥容器排出。 在这样的晶片干燥过程中，晶片可被驱动高速旋转，从而加速晶片表面上剩余的水滴离心分离。 优选地，在晶片旋转期间可以将所选择的吹扫气体进料到室中。 在用于室抽真空的真空泵激活时或在完成这种真空排气之后，净化气体供应基本上同时启动。 在一个说明性实施例中，可以使用超纯水冲洗腔室中的晶片。

    APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE
    7.
    发明申请
    APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE 审中-公开
    装置和处理半导体基板表面的方法

    公开(公告)号：US20110143541A1

    公开(公告)日：2011-06-16

    申请号：US12886427

    申请日：2010-09-20

    申请人： Yoshihiro OGAWA ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

    发明人： Yoshihiro OGAWA ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

    IPC分类号： H01L21/308 ,  B08B3/08 ,  B08B3/02

    CPC分类号： H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

    摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

    摘要翻译： 在一个实施例中，处理半导体衬底的表面的设备包括基板保持和旋转单元，第一至第四供电单元和去除单元。 基板保持旋转单元保持在其表面上形成有凸起图案并使半导体基板旋转的半导体基板。 第一供给单元向半导体基板的表面供给化学品，以清洁半导体基板。 第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。 第三供给单元向半导体基板的表面供给防水剂，以在凸形图案的表面上形成防水保护膜。 为了冲洗半导体衬底，第四供应单元将用纯水或酸性水稀释的酒精提供给半导体衬底的表面。 去除单元除去留下凸起图案的防水保护膜。

    Etching method and apparatus for semiconductor wafers
    8.
    发明授权
    Etching method and apparatus for semiconductor wafers 失效
    半导体晶片的蚀刻方法和装置

    公开(公告)号：US07097784B2

    公开(公告)日：2006-08-29

    申请号：US10742992

    申请日：2003-12-23

    申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    IPC分类号： B44C1/22 ,  C03C15/00

    CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

    摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

    摘要翻译： 一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法，包括选择适合于半导体晶片的蚀刻的预定蚀刻程序，将半导体晶片的数量计数为 在蚀刻之前将其装入蚀刻液中，基于计数得出蚀刻剂的温度下降，将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电，以蚀刻半导体晶片，并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。

    Etching method and apparatus for semiconductor wafers
    9.
    发明申请
    Etching method and apparatus for semiconductor wafers 审中-公开

    公开(公告)号：US20060255014A1

    公开(公告)日：2006-11-16

    申请号：US11490054

    申请日：2006-07-21

    申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    IPC分类号： C03C15/00 ,  H01L21/302 ,  B44C1/22

    CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

    摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

    FILTER, SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
    10.
    发明申请
    FILTER, SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD 审中-公开
    过滤器，基板处理装置和基板处理方法

    公开(公告)号：US20090317980A1

    公开(公告)日：2009-12-24

    申请号：US12548814

    申请日：2009-08-27

    申请人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

    发明人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67086 ,  H01L21/30604 ,  H01L21/31111

    摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes:a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate;an H2O adding port which permits the addition of H2O;a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; anda protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.

    摘要翻译： 一种可连接到外部循环系统的过滤器，该循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，该过滤器包括：化学物质进料口，其允许含有由于蚀刻所沉积的颗粒的H 3 PO 4溶液进料 基质; 一个允许加入H 2 O的H 2 O加入口; 通过加入H 2 O使热分布不均匀的H 3 PO 4溶液除去颗粒的过滤膜; 以及保护构件，其设置在H 2 O添加口和过滤膜之间，并且保护过滤膜免于通过加入H 2 O引起的H 3 PO 4溶液的撞击。