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6 条记录 (耗时 0.021 秒)

    Method of manufacturing a semiconductor light-emitting device
    2.
    发明授权
    Method of manufacturing a semiconductor light-emitting device 失效
    制造半导体发光装置的方法

    公开(公告)号：US5182228A

    公开(公告)日：1993-01-26

    申请号：US827782

    申请日：1992-01-28

    申请人： Hiroshi Sekii ,  Koichi Imanaka

    发明人： Hiroshi Sekii ,  Koichi Imanaka

    IPC分类号： H01L33/16 ,  H01S5/02 ,  H01S5/22 ,  H01S5/223

    CPC分类号： H01S5/2231 ,  H01L33/16 ,  H01S5/0425 ,  H01S5/2205 ,  Y10S148/095 ,  Y10S148/099

    摘要： In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried layer is made higher than the top surface of the ridge, the top surface of the ridge is situated in the resulting recess, and an electrode is formed from the top surface of the ridge to the top surface of the surrounding buried layer to cover the entirety of these surfaces. Making the buried layer higher than the top of the ridge prevents an electrical short circuit for being caused by an electrically conductive bonding agent used in junction-down mounting.

    摘要翻译： 在脊形波导型半导体发光器件中，掩埋层由高电阻半导体材料（例如非晶硅）组成，从而提高散热特性并延长寿命。 掩埋层被制成高于脊的顶表面，脊的顶表面位于所得的凹部中，并且电极从脊的顶表面到周围掩埋层的顶表面形成以覆盖 这些表面的整体。 使掩埋层比脊的顶部高，防止由用于结露放置安装的导电粘合剂引起的电短路。

    Semiconductor element and its method of manufacturing
    3.
    发明授权
    Semiconductor element and its method of manufacturing 失效
    半导体元件及其制造方法

    公开(公告)号：US5994723A

    公开(公告)日：1999-11-30

    申请号：US56941

    申请日：1993-05-05

    申请人： Hiroshi Sekii ,  Koichi Imanaka

    发明人： Hiroshi Sekii ,  Koichi Imanaka

    IPC分类号： H01S5/00 ,  H01L33/00 ,  H01L33/14 ,  H01L33/40 ,  H01S5/20 ,  H01S5/223 ,  H01S5/40

    CPC分类号： H01L33/0016 ,  H01L33/0025 ,  H01L33/145 ,  H01L33/40 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2231 ,  H01S5/4031

    摘要： An improved semiconductor construction and method of fabrication having a luminous element for emitting light is provided composed of a layer having a pn junction formed with a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type on an upper portion of a luminescent layer. In one portion of the above-described layer, an area for a current path consisting of the second conductivity type is formed extending from the second semiconductor layer to the first semiconductor layer. An ohmic contact electrode is then created covering substantially the entire upper surface of the second semiconductor layer with the exception of the area defined for the current path.

    摘要翻译： 提供一种具有用于发光的发光元件的改进的半导体结构和制造方法，其由具有由第一导电类型的第一半导体层和第二导电类型的第二半导体层形成的pn结的层组成， 的发光层。 在上述层的一部分中，形成从第二半导体层延伸到第一半导体层的由第二导电类型组成的电流路径的区域。 然后产生覆盖第二半导体层的整个上表面的欧姆接触电极，除了为电流路径定义的区域之外。

    Semiconductor light-emitting device
    4.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号：US5084893A

    公开(公告)日：1992-01-28

    申请号：US539698

    申请日：1990-06-18

    申请人： Hiroshi Sekii ,  Koichi Imanaka

    发明人： Hiroshi Sekii ,  Koichi Imanaka

    IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/16 ,  H01L33/30 ,  H01L33/34 ,  H01L33/40 ,  H01L33/62 ,  H01S5/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/223

    CPC分类号： H01S5/2231 ,  H01L33/16 ,  H01S5/2205

    摘要： In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried layer is made higher than the top surface of the ridge, the top surface of the ridge is situated in the resulting recess, and an electrode is formed from the top surface of the ridge to the top surface of the surrounding buried layer to cover the entirety of these surfaces. Making the buried layer higher than the top of the ridge prevents an electrical short circuit for being caused by an electrically conductive bonding agent used in junction-down mounting.

    摘要翻译： 在脊形波导型半导体发光器件中，掩埋层由高电阻半导体材料（例如非晶硅）组成，从而提高散热特性并延长寿命。 掩埋层被制成高于脊的顶表面，脊的顶表面位于所得的凹部中，并且电极从脊的顶表面到周围掩埋层的顶表面形成以覆盖 这些表面的整体。 使掩埋层比脊的顶部高，防止由用于结露放置安装的导电粘合剂引起的电短路。

    Displacement sensor and positioner
    5.
    发明授权
    Displacement sensor and positioner 失效
    位移传感器和定位器

    公开(公告)号：US5179287A

    公开(公告)日：1993-01-12

    申请号：US720398

    申请日：1991-06-25

    申请人： Kourou Kitajima ,  Hiroshi Sekii

    发明人： Kourou Kitajima ,  Hiroshi Sekii

    IPC分类号： G01S17/46

    CPC分类号： G01S17/48

    摘要： The invention provides a displacement sensor comprising a light-emitting element for projecting a detection light towards an object in a substantially perpendicular direction, a condensing element for condensing a reflected light from the object, and a position sensitive device with its light-receiving surface disposed in parallel with the axis of the detection light. A positioning apparatus employing the above displacement sensor is also disclosed.

    Ultraviolet detector
    6.
    发明授权
    Ultraviolet detector 失效
    紫外检测器

    公开(公告)号：US06335529B1

    公开(公告)日：2002-01-01

    申请号：US09509362

    申请日：2000-03-27

    申请人： Hiroshi Sekii ,  Akihisa Matsuyama

    发明人： Hiroshi Sekii ,  Akihisa Matsuyama

    IPC分类号： G01J142

    CPC分类号： G01J1/58

    摘要： An ultraviolet detector has a wavelength conversion element 1 of a length in an incident direction of UV light 2 set longer than the direction orthogonal to the incident angle, and a light receiving element 3 arranged at a side plane 1a of wavelength conversion element 1. Unconverted ultraviolet does not exit wavelength conversion element 1, and is propagated downwards to be attenuated. Visible light having the wavelength converted in wavelength conversion element 1 is propagated in all directions and received at light receiving element 3. Light receiving element 3 detects the quantity of light according to the incident amount of ultraviolet. As a result, the detection sensitivity is ensured and degradation of the light receiving element caused by ultraviolet radiation does not occur.

    摘要翻译： 紫外线检测器具有波长转换元件1，该波长转换元件1的紫外线2的入射方向的长度大于与入射角正交的方向的长度;以及光接收元件3，其布置在波长转换元件1的侧面1a处。未转换 紫外线不会离开波长转换元件1，并且向下传播以被衰减。 在波长转换元件1中具有波长转换的可见光在所有方向上传播并被接收在光接收元件3处。光接收元件3根据入射的紫外线量来检测光量。 结果，确保了检测灵敏度，并且不会发生由紫外线辐射引起的光接收元件的劣化。