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    Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same
    1.
    发明授权
    Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same 有权
    具有铁电电容器的半导体存储器件及其制造方法

    公开(公告)号：US07095068B2

    公开(公告)日：2006-08-22

    申请号：US10455376

    申请日：2003-06-06

    申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Shinichi Watanabe

    发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Shinichi Watanabe

    IPC分类号： H01L29/76 ,  H01L27/108

    CPC分类号： H01L27/11502 ,  H01L27/11507

    摘要： A semiconductor memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers, a first contact connected to the first diffusion layer, a first conductive oxygen barrier film electrically connected to the first contact and covering at least the upper surface of the first contact, a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes, and a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.

    摘要翻译： 半导体存储器件包括半导体衬底，形成在半导体衬底上的第一晶体管，包括第一栅电极和第一和第二扩散层，与第一扩散层连接的第一触点，与第一导电氧阻隔膜电连接的第一导电氧阻隔膜 首先接触并且至少覆盖第一接触件的上表面;第一铁电电容器，包括插入在第一和第二电极之间的第一电极，第二电极和第一铁电体膜;以及连接到第一电极的第一连接构件 和第一导电氧阻隔膜。

    Semiconductor memory device having ferroelectric capacitors with hydrogen barriers
    2.
    发明授权
    Semiconductor memory device having ferroelectric capacitors with hydrogen barriers 失效
    具有具有氢屏障的铁电电容器的半导体存储器件

    公开(公告)号：US07400005B2

    公开(公告)日：2008-07-15

    申请号：US11142441

    申请日：2005-06-02

    申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

    发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

    IPC分类号： H01L29/92

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

    摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.

    摘要翻译： 一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜 电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二 氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

    Semiconductor memory device and its manufacturing method
    3.
    发明申请
    Semiconductor memory device and its manufacturing method 失效
    半导体存储器件及其制造方法

    公开(公告)号：US20060180894A1

    公开(公告)日：2006-08-17

    申请号：US11142441

    申请日：2005-06-02

    申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

    发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

    IPC分类号： H01L29/00

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

    摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.

    摘要翻译： 一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜 电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二 氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

    Ferro-electric memory device and method of manufacturing the same
    4.
    发明授权
    Ferro-electric memory device and method of manufacturing the same 失效
    铁电记忆装置及其制造方法

    公开(公告)号：US06972990B2

    公开(公告)日：2005-12-06

    申请号：US10858441

    申请日：2004-06-02

    申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

    发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

    IPC分类号： H01L27/10 ,  G11C11/14 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105

    CPC分类号： G11C11/22 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/57

    摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.

    摘要翻译： 铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜， 绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器 铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为 布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。

    FERRO-ELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    FERRO-ELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    电动记忆体装置及其制造方法

    公开(公告)号：US20050207202A1

    公开(公告)日：2005-09-22

    申请号：US10858441

    申请日：2004-06-02

    申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

    发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

    IPC分类号： H01L27/10 ,  G11C11/14 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105

    CPC分类号： G11C11/22 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/57

    摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.

    摘要翻译： 铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜， 绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器 铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为 布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。

    Semiconductor device and method of manufacturing the same
    9.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06680499B2

    公开(公告)日：2004-01-20

    申请号：US09988138

    申请日：2001-11-19

    申请人： Yoshinori Kumura ,  Hiroyuki Kanaya ,  Iwao Kunishima

    发明人： Yoshinori Kumura ,  Hiroyuki Kanaya ,  Iwao Kunishima

    IPC分类号： H01L2976

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

    摘要： Provided are a semiconductor memory device that permits increasing the degree of integration without decreasing the capacitance of the capacitor included in a memory cell, and a method of manufacturing the particular semiconductor memory device. Specifically, provided are a semiconductor memory device, comprising a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate, a first electrode formed on the interlayer insulating film, a first ferroelectric film formed on the first electrode, a second electrode formed on the first ferroelectric film, a second ferroelectric film formed on the second electrode, and a third electrode formed on the second ferroelectric film, and a method of manufacturing the particular semiconductor memory device.

    摘要翻译： 提供一种允许增加集成度而不减小包括在存储单元中的电容器的电容的半导体存储器件，以及制造特定半导体存储器件的方法。 具体地，提供一种半导体存储器件，包括半导体衬底，形成在半导体衬底上的层间绝缘膜，形成在层间绝缘膜上的第一电极，形成在第一电极上的第一铁电膜，形成在第一电极上的第二电极 第一铁电体膜，形成在第二电极上的第二铁电体膜和形成在第二铁电体膜上的第三电极，以及制造特定半导体存储器件的方法。