摘要:
An anti-reflective coating-forming composition comprising: (A) at least one compound selected from the group consisting of (i) a compound represented by the following formula (1): Si(OR1)a(OR2)b(OR3)c(OR4)d (1) (ii) a compound represented by the following formula (2): R5Si(OR6)e(OR7)f(OR8)g (2) and (iii) a compound represented by the following formula (3): R9R10Si(OR11)h(OR12)I (3) and (B) a thermosetting resin which can be condensed to said component (A) and has an absorption capacity with respect to exposing light.
摘要:
Proposed is a liquid coating composition for the formation of a siliceous coating film having good storage stability against gelation for the protection, levelling or electric insulation of various substrate surfaces. The composition is a uniform solution comprising:(A) a partial cohydrolysis-cocondensation product of(a) a first hydrolyzable silane compound represented by the general formulaHSi(OR).sub.3, in which each R is, independently from the others, an alkyl group having 1 to 4 carbon atoms or a phenyl group, and(b) a second hydrolyzable silane compound represented by the general formulaSi(OR).sub.4, in which each R has the same meaning as defined above, in a molar ratio of (a):(b) in the range from 1:9 to 9:1; and (B) an organic solvent to dissolve the component (A). The storage stability of the coating composition can be improved by removing the alcohol contained therein as the hydrolysis product of the silane compounds to such a content as not to exceed 15% by weight.
摘要:
Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capable of forming a silica-based coating film free from the troubles due to evolution of gases such as crack formation even when the coating film has a relatively large thickness. The coating solution is prepared by the hydrolysis reaction of a trialkoxy silane such as triethoxy silane dissolved in propyleneglycol dimethyl ether in a specified concentration with addition of a specified amount of water followed by removal of the alcohol formed by the hydrolysis reaction of the trialkoxy silane by distillation to such an extent that the content of the alcohol in the coating solution does not exceed 10% by weight or, preferably, 3% by weight.
摘要:
Proposed is a liquid coating composition for the formation of a siliceous coating film having good storage stability against gelation for the protection, levelling or electric insulation of various substrate surfaces. The composition is a uniform solution comprising:(A) a partial cohydrolysis-cocondensation product of(a) a first hydrolyzable silane compound represented by the general formulaHSi(OR).sub.3, in which each R is, independently from the others, an alkyl group having 1 to 4 carbon atoms or a phenyl group, and(b) a second hydrolyzable silane compound represented by the general formulaSi(OR).sub.4, in which each R has the same meaning as defined above,in a molar ratio of (a):(b) in the range from 1:9 to 9:1; and (B) an organic solvent to dissolve the component (A). The storage stability of the coating composition can be improved by removing the alcohol contained therein as the hydrolysis product of the silane compounds to such a content as not to exceed 15% by weight.
摘要:
Disclosed is a method for the formation of a silica-based coating film of a relatively large thickness in the manufacturing process of semiconductor devices and liquid crystal display panels by repeating the sequence consisting of coating of the surface with a coating solution containing a partial hydrolysis-condensation product of a trialkoxy silane compound followed by drying until a desired overall thickness of the coating film is obtained prior to a final baking treatment at 350 to 500.degree. C . The invention provides an improvement obtained by an ultraviolet irradiation treatment of the coating film intervening between a sequence of coating and drying and the next sequence of coating and drying so that the adhesion between the coating layers formed by repeating the sequence of coating and drying can be improved along with an advantage of absence of pinholes in the coating film.
摘要:
Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capable of forming a silica-based coating film free from the troubles due to evolution of gases such as crack formation even when the coating film has a relatively large thickness. The coating solution is prepared by the hydrolysis reaction of a trialkoxy silane such as triethoxy silane dissolved in propyleneglycol dimethyl ether in a specified concentration with addition of a specified amount of water followed by removal of the alcohol formed by the hydrolysis reaction of the trialkoxy silane by distillation to such an extent that the content of the alcohol in the coating solution does not exceed 10% by weight or, preferably, 3% by weight.
摘要:
A liquid developer for use in developing binary diazo copying materials which consists essentially of an alkali metal salt of an aminoacid and/or an alkaline earth metal salt of an aminoacid.
摘要:
Disclosed is a method for the formation of a silica coating film having a remarkably high crack-forming thickness limit on the surface of a substrate which may be highly heat resistant, for example, having a circuit wiring layer of polycrystalline silicon to withstand a temperature higher than 500° C. without excessive diffusion of dopant through the source layer or drain layer of the semiconductor device. The method comprises the steps of: coating the substrate surface with a coating solution containing a modified polysilazane which is a reaction product of a polysilazane and a dialkyl alkanol amine, drying the coating layer, subjecting the coating layer to a first baking treatment at 350-450° C. for 10-60 minutes and subjecting the layer to a second baking treatment at 550-800° C. for 0.5-60 minutes.
摘要:
Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the coating layer of polysilazane into a silica-based coating film. The method comprises drying the coating layer of the polysilazane according to a heating schedule at a specified heating rate with continuous or stepwise increase of the temperature up to 240.degree. to 350.degree. C. followed by an irradiation treatment with far ultraviolet light at a temperature of 240.degree. to 350.degree. C. and then by a baking treatment at 350.degree. to 800.degree. C.
摘要:
Provided is a susceptor 13 for manufacturing an epitaxial wafer, comprising a mesh-like groove 13b on a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coating has a surface roughness of 1 μm or more in centerline average roughness Ra and a maximum height of a protrusion 13p generated in forming the coating H of 5 μm or less. Thus, defects such as warping and slip as well as adhesion of the silicon substrate to the susceptor are prevented.