摘要:
An automatic paper loading device and method wherein a paper magazine is placed on a magazine table. The table is slid toward a pair of feed rollers disposed at a paper entrance of a printer processor. While the paper magazine is moving together with the magazine table, the feed roller pair starts rotating, so that a paper leading end is nipped by the feed roller pair immediately before the paper magazine is completely set in the printer processor. A cut-out for allowing the access of the feed roller pair to the paper leading end is formed in the exit of the paper magazine. When the paper leading end has passed through the feed roller pair, the feed roller stops rotating. Then, the width of paper guide are adjusted according to paper data read from the paper magazine. After the adjustment, the feed roller pair starts rotating again, so as to feed the paper further into the printer processor.
摘要:
A paper transporting device for a photographic printer. A pulse motor starts rotating during a magazine setting operation. The rotation of the pulse motor is transmitted to a pair of feed rollers through a pin-clutch mechanism and a paper feed gear train. Immediately before a paper magazine is completely attached to the photographic printer, the feed rollers nip the leading end of photographic paper and pull the photographic paper out of the paper magazine. When changing the paper magazine, a solenoid is turned on to change over the pin-clutch mechanism from the paper feed gear train to a paper rewind gear train. Thereafter, the pulse motor is rotated in reverse, so as to rotate a winding shaft of the paper magazine through the pin-clutch mechanism and the paper rewind gear train. An unexposed portion of the photographic paper remaining in the photographic printer is thus wound back into the paper magazine.
摘要:
A paper mask unit for setting a paper mask in an exposure station of a photographic printer. A mask frame of the paper mask unit has a paper guide member which is movable in a direction transverse to a paper transporting direction between a paper guide position for guiding photographic paper thereon and a rest position wherein the paper guide member is retracted from the exposure station. After the photographic paper is set in the exposure station, the mask frame is displaced apart from the photographic paper. When the paper mask is inserted into the mask frame through the mask guide path, the paper guide member is pushed by the paper mask inwards from the paper guide position into the rest position. Simultaneously, a letter printing aperture of the paper mask is automatically positioned on a lamp housing which is mounted on the paper guide member. Thereafter, the mask frame is moved into a masking position so as to bring the paper mask into contact with the photographic paper. The paper guide member is urged by springs to return to the paper guide position when the paper mask is removed from the mask frame.
摘要:
An apparatus for transporting a photographic paper having an epicyclic gear clutch mechanism for transmitting the rotation of a motor selectively to a magazine and a pair of nip rollers. In auto-loading of the photographic paper, the nip rollers are rotated by the motor to feed the leading end of the photographic paper to the exposure station. If a magazine is exchanged before the whole photographic paper is used, the photographic paper is cut at a position upstream of the last picture frame. In the first paper winding operation, the rotation of the motor is transmitted via the epicyclic gear clutch mechanism to the magazine to wind the unprinted portion of the photographic paper into the magazine. When the leading end of the photographic paper is returned back near the tip rollers, the epicyclic gear clutch mechanism is coupled to the nip rollers. In a second paper winding operation, the nip rollers are rotated reversely until the photographic paper detaches from the nip rollers. According to a preferred embodiment, the rotation of the motor is stopped when the leading end of the photographic paper nears the nip rollers. Immediately thereafter, the epicyclic gear clutch mechanism is coupled to the nip rollers to prevent the photographic paper roll from being rotated by the inertia. When the nip rollers are moved to the nip release position, the leading end of the photographic paper is released from the nip state, thereby allowing the magazine to be unloaded from the magazine chamber.
摘要:
A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要:
A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell provided on the semiconductor substrate, the nonvolatile memory cell including a tunnel insulating film provided on a surface of the semiconductor substrate, the tunnel insulating film including semiconductor grains, the semiconductor grains included in both end portions of the tunnel insulating film having smaller grain size than the semiconductor grains included in other portions of the tunnel insulating film, a charge storage layer provided on the tunnel insulating film, an insulating film provided on the charge storage layer, and a control gate electrode provided on the insulating film.
摘要:
A semiconductor device includes a memory cell transistor including a first lower insulating film provided on a semiconductor substrate, a first intermediate insulating film provided on the first lower insulating film, a first upper insulating film provided on the first intermediate insulating film, and a first gate electrode provided on the first upper insulating film, and a select transistor including a second lower insulating film provided on the semiconductor substrate, a second intermediate insulating film provided on the second lower insulating film, a second upper insulating film provided on the second intermediate insulating film, and a second gate electrode provided on the second upper insulating film, wherein trap density of the second intermediate insulating film is lower than that of the first intermediate insulating film.
摘要:
A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要:
In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.
摘要:
According to an embodiment, there is provided a method of manufacturing a semiconductor device, including forming a nitride film by nitriding a surface of an underlying region having a semiconductor region containing silicon as a main component and an insulating region containing silicon and oxygen as a main component and adjacent to the semiconductor region, carrying out oxidation with respect to the nitride film to convert a portion of the nitride film which is formed on the insulating region into an oxide film and to leave a portion of the nitride film which is formed on the semiconductor region as at least part of a charge storage insulating film, forming a block insulating film on the charge storage insulating film, and forming a gate electrode film on the block insulating film.