公开(公告)号：US07345746B2

公开(公告)日：2008-03-18

申请号：US11515023

申请日：2006-09-01

Applicant: Yoshio Takami

Inventor： Yoshio Takami

IPC: G01N21/00

CPC classification number: H01L21/02686 ,  C30B13/28 ,  G01N21/8422 ,  G01N2021/8477 ,  H01L21/2026 ,  H01L21/67115 ,  H01L21/67253 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In-situ monitoring of a crystallization state is used for laser anneal processing for applying an energy line irradiation for at least one of crystallization of a thin film and promotion of the crystallization. A method is characterized by simultaneously irradiating at least a plurality of monitoring places in a region having a predetermined area of at least one of the surface and the underside of the thin film by a monitor light for monitoring a crystallization state of the thin film at least during or after of before, during and after the energy line irradiation directly or through a substrate, and measuring a temporal change of the intensity of at least one of a reflected light and a transmitted light, from the surface or the underside of the thin film, of the monitor light as a light intensity distribution related to the positions of the monitoring places. Apparatus according to the invention perform such methods.

Abstract translation: 结晶状态的原位监测用于激光退火处理，用于施加能量线照射用于薄膜结晶中的至少一种并促进结晶。 一种方法的特征在于，通过监测光同时照射具有至少一个薄膜的表面和底面的预定面积的区域中的至少多个监测位置，用于至少监测薄膜的结晶状态 在直接或通过基板的能量线照射之前，之后和之后的过程中或之后，从薄膜的表面或底面测量反射光和透射光中的至少一个的强度的时间变化 作为与监视位置的位置相关的光强度分布的监视光。 根据本发明的装置执行这种方法。

公开(公告)号：US20070138146A1

公开(公告)日：2007-06-21

申请号：US11608947

申请日：2006-12-11

Applicant: Yoshio Takami ,  Tatsuhiro Taguchi

Inventor： Yoshio Takami ,  Tatsuhiro Taguchi

IPC: B23K26/00

CPC classification number: B23K26/043 ,  B23K26/04 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/0853 ,  B23K2101/40 ,  H01L27/1285

Abstract: A laser crystallization apparatus and a crystallization method with a high throughput are provided. Laser light having a predetermined light intensity distribution is irradiated to a semiconductor film to melt and crystallize, wherein a irradiation position is positioned very quickly and with a high positional accuracy, thereby forming the semiconductor film having a large crystal grain size. A laser crystallization apparatus according to one aspect of the present invention comprises a laser light source, a phase shifter modulating laser light to give a predetermined light intensity distribution, marks provided on the substrate, a substrate holding stage moving in a predetermined direction, mark measuring means measuring a time at which the mark passes a predetermined position, and signal generating means generating a trigger signal indicating the irradiation of the laser light based on the measured time.

Abstract translation: 提供了具有高通量的激光结晶装置和结晶方法。 将具有预定的光强度分布的激光照射到半导体膜上以熔融结晶，其中照射位置非常快速且位置精度高，从而形成具有大晶粒尺寸的半导体膜。 根据本发明的一个方面的激光结晶装置包括激光光源，调制激光以产生预定光强度分布的移相器，设置在基板上的标记，沿预定方向移动的基板保持台，标记测量 意味着测量标记通过预定位置的时间，以及根据测量时间产生指示激光照射的触发信号的信号发生装置。

公开(公告)号：US07130048B2

公开(公告)日：2006-10-31

申请号：US10717552

申请日：2003-11-21

Applicant: Yoshio Takami

Inventor： Yoshio Takami

IPC: G01J4/00

CPC classification number: G01N21/8422 ,  G01N21/211

Abstract: In an apparatus which determines characteristics of a thin film according to the present invention, a temporal change in a refractive index n and an extinction coefficient k of a thin film in a period from start of a change in the thin film as a processing target (e.g., melting) to end of the change (e.g., solidification) can be obtained with a high time resolution of pico-seconds. Based on this, it is possible to know a progress of a change in state of the thin film (e.g., crystallization) or a transition of growth of crystal grains in units of pico-seconds.

Abstract translation: 在根据本发明的确定薄膜特性的装置中，在从作为处理目标的薄膜的变化开始的时段内的薄膜的折射率n和消光系数k的时间变化（ 例如，熔化）到结束变化（例如，凝固）可以以高的时间分辨率获得微微秒。 基于此，可以知道薄膜状态的变化（例如结晶）的进展或晶粒生长的转变，以微微秒为单位。

公开(公告)号：US09322786B2

公开(公告)日：2016-04-26

申请号：US14377725

申请日：2012-02-10

Applicant: Yoshio Takami

Inventor： Yoshio Takami

IPC: G01N21/88 ,  G01N21/95 ,  H02S50/10 ,  G01M11/00 ,  H01L31/18 ,  G01N21/894

CPC classification number: G01N21/8803 ,  G01M11/00 ,  G01N21/8806 ,  G01N21/894 ,  G01N21/9501 ,  G01N21/9505 ,  G01N2201/02 ,  G01N2201/04 ,  G01N2201/061 ,  H01L31/18 ,  H02S50/10

Abstract: An inspection apparatus 1 for solar cells 100 includes: a visible light source 11 adapted to irradiate visible light; a CCD camera 15 adapted to measure a reflection image based on the visible light reflected by an antireflective film of a solar cell 100; an infrared light source 13 adapted to irradiate the solar cell 100 with infrared light; and a CCD camera 16 adapted to measure a transmission image based on the infrared light transmitting through the solar cell 100. In the inspection apparatus 1, as a result of comparing the reflection image and the transmission image with each other, of areas respectively appearing as bright spots in the reflection image, an area appearing as a dark spot in the transmission image is determined as an area including a particle, whereas of the areas respectively appearing as the bright spots in the reflection image, an area other than the area determined as the area including the particle is determined as an area including a pinhole.

Abstract translation: 太阳能电池100的检查装置1包括：适于照射可见光的可见光源11; 适于基于由太阳能电池100的抗反射膜反射的可见光测量反射图像的CCD照相机15; 适于用太阳能电池100照射红外光的红外光源13; 以及适于基于通过太阳能电池100透射的红外光来测量透射图像的CCD照相机16.在检查装置1中，作为将反射图像和透射图像彼此进行比较的结果，分别表现为 反射图像中的亮点，作为透射图像中的暗点的区域被确定为包括粒子的区域，而在反射图像中分别出现为亮点的区域，除了被确定为 将包括粒子的区域确定为包括针孔的区域。

公开(公告)号：US07292320B2

公开(公告)日：2007-11-06

申请号：US11074054

申请日：2005-03-08

Applicant: Yoshio Takami

Inventor： Yoshio Takami

IPC: G01N21/00

CPC classification number: H01L21/268 ,  B23K26/0006 ,  B23K26/032 ,  B23K2103/56 ,  H01L21/02678 ,  H01L21/02686 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A laser crystallization apparatus, which enables an observation of a high spatial resolution with several μm and a high temporal resolution with several nanoseconds, comprising a crystallization optical system to irradiate a laser light to a thin film provided on a substrate and to melt and crystallize the thin film, the laser crystallization apparatus comprises an illumination light source disposed out of an optical path of the laser light and emitting an illumination light for observation to illuminate the thin film, an illumination optical system comprising an annular optical element which has the optical path of the laser light in the center and which leads the illumination light from the illumination light source to the thin film along the optical path, and an observation optical system which displays a magnified image of the substrate including the thin film.

Abstract translation: 一种激光结晶装置，其能够观察到具有几个微米的高空间分辨率和具有几纳秒的高时间分辨率，包括用于将激光照射到设置在基板上的薄膜并且熔化和结晶的结晶光学系统 所述激光结晶装置包括设置在所述激光的光路外的照明光源，并且发射用于观察的照明光以照射所述薄膜;照明光学系统，包括环形光学元件，所述环形光学元件具有 中心的激光，沿着光路引导从照明光源到薄膜的照明光，以及观察光学系统，其显示包括薄膜的基板的放大图像。

公开(公告)号：US20070002308A1

公开(公告)日：2007-01-04

申请号：US11515023

申请日：2006-09-01

Applicant: Yoshio Takami

Inventor： Yoshio Takami

IPC: G01N21/00

CPC classification number: H01L21/02686 ,  C30B13/28 ,  G01N21/8422 ,  G01N2021/8477 ,  H01L21/2026 ,  H01L21/67115 ,  H01L21/67253 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In-situ monitoring of a crystallization state is used for laser anneal processing for applying an energy line irradiation for at least one of crystallization of a thin film and promotion of the crystallization. A method is characterized by simultaneously irradiating at least a plurality of monitoring places in a region having a predetermined area of at least one of the surface and the underside of the thin film by a monitor light for monitoring a crystallization state of the thin film at least during or after of before, during and after the energy line irradiation directly or through a substrate, and measuring a temporal change of the intensity of at least one of a reflected light and a transmitted light, from the surface or the underside of the thin film, of the monitor light as a light intensity distribution related to the positions of the monitoring places. Apparatus according to the invention perform such methods.

Abstract translation: 结晶状态的原位监测用于激光退火处理，用于施加能量线照射用于薄膜结晶中的至少一种并促进结晶。 一种方法的特征在于，通过监测光同时照射具有至少一个薄膜的表面和底面的预定面积的区域中的至少多个监测位置，用于至少监测薄膜的结晶状态 在直接或通过基板的能量线照射之前，之后和之后的过程中或之后，从薄膜的表面或底面测量反射光和透射光中的至少一个的强度的时间变化 作为与监视位置的位置相关的光强度分布的监视光。 根据本发明的装置执行这种方法。

公开(公告)号：US20050199596A1

公开(公告)日：2005-09-15

申请号：US11074054

申请日：2005-03-08

Applicant: Yoshio Takami

Inventor： Yoshio Takami

IPC: H01L21/20 ,  B23K26/00 ,  B23K26/06 ,  H01L21/268

CPC classification number: H01L21/268 ,  B23K26/0006 ,  B23K26/032 ,  B23K2103/56 ,  H01L21/02678 ,  H01L21/02686 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A laser crystallization apparatus, which enables an observation of a high spatial resolution with several μm and a high temporal resolution with several nanoseconds, comprising a crystallization optical system to irradiate a laser light to a thin film provided on a substrate and to melt and crystallize the thin film, the laser crystallization apparatus comprises an illumination light source disposed out of an optical path of the laser light and emitting an illumination light for observation to illuminate the thin film, an illumination optical system comprising an annular optical element which has the optical path of the laser light in the center and which leads the illumination light from the illumination light source to the thin film along the optical path, and an observation optical system which displays a magnified image of the substrate including the thin film.

Abstract translation: 一种激光结晶装置，其能够观察到具有几个微米的高空间分辨率和具有几纳秒的高时间分辨率，包括用于将激光照射到设置在基板上的薄膜并且熔化和结晶的结晶光学系统 所述激光结晶装置包括设置在所述激光的光路外的照明光源，并且发射用于观察的照明光以照射所述薄膜;照明光学系统，包括环形光学元件，所述环形光学元件具有 中心的激光，沿着光路引导从照明光源到薄膜的照明光，以及观察光学系统，其显示包括薄膜的基板的放大图像。

公开(公告)号：US5105161A

公开(公告)日：1992-04-14

申请号：US558320

申请日：1990-07-26

Applicant: Yoshio Takami ,  Shinji Nagamachi ,  Masakatsu Sakisaka

Inventor： Yoshio Takami ,  Shinji Nagamachi ,  Masakatsu Sakisaka

IPC: H05H5/06

CPC classification number: H05H5/06

Abstract: An acceleration/deceleration tube comprises a plurality of pairs of opposing electrodes alternatively positioned to be orthogonal along the opposing direction and overlapped by each other along the direction of the common axis, and a DC power source provided for applying specific DC voltages with a potential difference of a particular direction to each of the pairs of opposing electrodes according to the arrangement order along the common axis.

公开(公告)号：US07964036B2

公开(公告)日：2011-06-21

申请号：US11926893

申请日：2007-10-29

Applicant: Noritaka Akita ,  Yoshio Takami

Inventor： Noritaka Akita ,  Yoshio Takami

IPC: C30B11/14

CPC classification number: B23K26/0613 ,  B23K26/066 ,  H01L21/02381 ,  H01L21/02675 ,  Y10T117/1004

Abstract: A crystallization apparatus is provided. In the crystallization apparatus, a light intensity distribution formed by a light modulation device or a metal aperture and transferred to a processed substrate can be visualized. The crystallization apparatus has an ultraviolet (UV) irradiation system and a visible light irradiation system. The UV irradiation system irradiates pulses of laser beam in the UV range to the processed substrate. The visible light irradiation system continuously irradiates a visible light laser beam on the same irradiated region on the processed substrate. In a melted region resulted from the uniform irradiation of the laser beam in the UV range, the light intensity distribution of the visible laser beam is used to form crystal growth. The crystallization apparatus irradiates pulses of the laser beam in the UV range to melt the processed substrate, and continuously irradiates the visible light laser beam to crystallize the processed substrate.

Abstract translation: 提供结晶装置。 在结晶装置中，可以观察到由光调制装置或金属孔径形成并转移到处理的基板的光强度分布。 结晶装置具有紫外线（UV）照射系统和可见光照射系统。 UV照射系统将UV范围内的激光束的脉冲照射到被处理的基板。 可见光照射系统在可处理基板上的相同照射区域上连续照射可见光激光束。 在UV范围内由于激光束的均匀照射而产生的熔融区域中，使用可见激光束的光强度分布来形成晶体生长。 结晶装置照射UV范围内的激光束的脉冲，使经处理的基板熔化，并连续照射可见光激光束，使经处理的基板结晶。

公开(公告)号：US07642482B2

公开(公告)日：2010-01-05

申请号：US11608947

申请日：2006-12-11

Applicant: Yoshio Takami ,  Tatsuhiro Taguchi

Inventor： Yoshio Takami ,  Tatsuhiro Taguchi

IPC: B23K26/00 ,  B23K26/08 ,  H01L21/268

CPC classification number: B23K26/043 ,  B23K26/04 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/0853 ,  B23K2101/40 ,  H01L27/1285

Abstract: A laser crystallization apparatus and a crystallization method with a high throughput are provided. Laser light having a predetermined light intensity distribution is irradiated to a semiconductor film to melt and crystallize, wherein a irradiation position is positioned very quickly and with a high positional accuracy, thereby forming the semiconductor film having a large crystal grain size. A laser crystallization apparatus according to one aspect of the present invention comprises a laser light source, a phase shifter modulating laser light to give a predetermined light intensity distribution, marks provided on the substrate, a substrate holding stage moving in a predetermined direction, mark measuring means measuring a time at which the mark passes a predetermined position, and signal generating means generating a trigger signal indicating the irradiation of the laser light based on the measured time.

Abstract translation: 提供了具有高通量的激光结晶装置和结晶方法。 将具有预定的光强度分布的激光照射到半导体膜上以熔融结晶，其中照射位置非常快速且位置精度高，从而形成具有大晶粒尺寸的半导体膜。 根据本发明的一个方面的激光结晶装置包括激光光源，调制激光以产生预定光强度分布的移相器，设置在基板上的标记，沿预定方向移动的基板保持台，标记测量 意味着测量标记通过预定位置的时间，以及根据测量时间产生指示激光照射的触发信号的信号发生装置。