公开(公告)号：US07544587B2

公开(公告)日：2009-06-09

申请号：US11650503

申请日：2007-01-08

申请人： Yosuke Watanabe ,  Keiji Nomaru ,  Nobumori Ogoshi ,  Koichi Mitani ,  Taizo Kise ,  Kohei Matsumoto ,  Tatsuya Inaoka ,  Masaru Nakamura

发明人： Yosuke Watanabe ,  Keiji Nomaru ,  Nobumori Ogoshi ,  Koichi Mitani ,  Taizo Kise ,  Kohei Matsumoto ,  Tatsuya Inaoka ,  Masaru Nakamura

IPC分类号： H01L21/301

CPC分类号： B26F3/002 ,  B23K26/40 ,  B23K2103/50 ,  B26D7/10 ,  B28D5/0011 ,  B28D5/0052 ,  Y10T225/325

摘要： A method of dividing, along lattice pattern-like dividing lines, a wafer which has the lattice pattern-like dividing lines and a polymer film on the front surface of a substrate and is processed to allow for division along the dividing lines, the method comprising a frame holding step for putting the wafer on the surface of an adhesive tape mounted on an annular frame; a wafer cooling step for cooling the wafer that is affixed to the surface of the adhesive tape mounted on the annular frame; and a diving step for dividing the wafer along the dividing lines by expanding the adhesive tape to which the cooled wafer is affixed.

摘要翻译： 沿着格子状分割线将具有格子状分割线的晶片和在基板的前表面上的聚合物膜分割的方法，其被处理以允许沿着分割线分割，所述方法包括 框架保持步骤，用于将晶片放置在安装在环形框架上的胶带的表面上; 用于冷却固定到安装在环形框架上的胶带的表面的晶片的晶片冷却步骤; 以及用于通过使粘附有冷却晶片的粘合带膨胀而沿着分割线分割晶片的潜水步骤。

公开(公告)号：US20070164073A1

公开(公告)日：2007-07-19

申请号：US11650503

申请日：2007-01-08

申请人： Yosuke Watanabe ,  Keiji Nomaru ,  Nobumori Ogoshi ,  Koichi Mitani ,  Taizo Kise ,  Kohei Matsumoto ,  Tatsuya Inaoka ,  Masaru Nakamura

发明人： Yosuke Watanabe ,  Keiji Nomaru ,  Nobumori Ogoshi ,  Koichi Mitani ,  Taizo Kise ,  Kohei Matsumoto ,  Tatsuya Inaoka ,  Masaru Nakamura

IPC分类号： B26F3/00 ,  B26F3/02

CPC分类号： B26F3/002 ,  B23K26/40 ,  B23K2103/50 ,  B26D7/10 ,  B28D5/0011 ,  B28D5/0052 ,  Y10T225/325

摘要： A method of dividing, along lattice pattern-like dividing lines, a wafer which has the lattice pattern-like dividing lines and a polymer film on the front surface of a substrate and is processed to allow for division along the dividing lines, the method comprising a frame holding step for putting the wafer on the surface of an adhesive tape mounted on an annular frame; a wafer cooling step for cooling the wafer that is affixed to the surface of the adhesive tape mounted on the annular frame; and a diving step for dividing the wafer along the dividing lines by expanding the adhesive tape to which the cooled wafer is affixed.

摘要翻译： 沿着格子状分割线将具有格子状分割线的晶片和在基板的前表面上的聚合物膜分割的方法，其被处理以允许沿着分割线分割，所述方法包括 框架保持步骤，用于将晶片放置在安装在环形框架上的胶带的表面上; 用于冷却固定到安装在环形框架上的胶带的表面的晶片的晶片冷却步骤; 以及用于通过使粘附有冷却晶片的粘合带膨胀而沿着分割线分割晶片的潜水步骤。

公开(公告)号：US20060079155A1

公开(公告)日：2006-04-13

申请号：US11244172

申请日：2005-10-06

申请人： Masaru Nakamura ,  Yosuke Watanabe ,  Satoshi Kobayashi ,  Noboru Takeda ,  Masanori Yoshida ,  Takashi Sanpei ,  Masahiro Murata

发明人： Masaru Nakamura ,  Yosuke Watanabe ,  Satoshi Kobayashi ,  Noboru Takeda ,  Masanori Yoshida ,  Takashi Sanpei ,  Masahiro Murata

IPC分类号： B24B1/00

CPC分类号： H01L21/302 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B24B7/228 ,  H01L21/02021

摘要： A wafer grinding method for grinding the surface to be ground of a wafer having an arcuatedly chamfered outer peripheral surface, comprising an outer peripheral portion removal step for removing the outer peripheral portion of the wafer by applying a laser beam from one surface side of the wafer along the outer periphery at a location on the inside of the outer periphery by a predetermined distance; and a grinding step for grinding the surface to be ground of the wafer whose outer peripheral portion has been removed, to a predetermined finish thickness.

摘要翻译： 一种用于研磨具有圆弧倒角外周面的晶片被研磨表面的晶片研磨方法，包括外周部分去除步骤，用于通过从晶片的一个表面侧施加激光来去除晶片的外周部分 沿着所述外周的内侧的位置沿所述外周延伸预定距离; 以及研磨步骤，用于将已经除去外周部分的晶片的被研磨表面研磨至预定的精加工厚度。

公开(公告)号：US20090298263A1

公开(公告)日：2009-12-03

申请号：US12468556

申请日：2009-05-19

申请人： Yosuke Watanabe ,  Ryugo Oba ,  Masaru Nakamura

发明人： Yosuke Watanabe ,  Ryugo Oba ,  Masaru Nakamura

IPC分类号： H01L21/304

CPC分类号： H01L21/78 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/172 ,  B23K2103/50

摘要： A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street.

摘要翻译： 一种用于在其前侧分割具有膜的晶片的晶片分割方法。 晶片分割方法包括：修改层形成步骤，其沿着街道从其前侧向晶片的基板施加具有透射波长的激光束，使得激光束的焦点设置在基板内部，从而形成 沿着每个街道的基板中的改性层，膜分离步骤，沿着每条街道从晶片的前侧向膜施加具有吸收波长的激光束，从而形成用于沿着每条街道分割膜的激光加工槽 ，后磨削步骤，研磨晶片的基板的背面，从而将晶片的厚度减小到预定厚度;晶片支撑步骤，将晶片附着到支撑在环形框架上的切割带;以及晶片 通过扩大切割胶带将外力施加到晶片从而沿着每个街道破裂晶片的断裂步骤。

公开(公告)号：US07897488B2

公开(公告)日：2011-03-01

申请号：US12468556

申请日：2009-05-19

申请人： Yosuke Watanabe ,  Ryugo Oba ,  Masaru Nakamura

发明人： Yosuke Watanabe ,  Ryugo Oba ,  Masaru Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/172 ,  B23K2103/50

摘要： A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street.

摘要翻译： 一种用于在其前侧分割具有膜的晶片的晶片分割方法。 晶片分割方法包括：修改层形成步骤，其沿着街道从其前侧向晶片的基板施加具有透射波长的激光束，使得激光束的焦点设置在基板内部，从而形成 沿着每个街道的基板中的改性层，膜分离步骤，沿着每条街道从晶片的前侧向膜施加具有吸收波长的激光束，从而形成用于沿着每条街道分割膜的激光加工槽 ，后磨削步骤，研磨晶片的基板的背面，从而将晶片的厚度减小到预定厚度;晶片支撑步骤，将晶片附着到支撑在环形框架上的切割带;以及晶片 通过扩大切割胶带将外力施加到晶片从而沿着每个街道破裂晶片的断裂步骤。

公开(公告)号：US09099546B2

公开(公告)日：2015-08-04

申请号：US13275878

申请日：2011-10-18

申请人： Masaru Nakamura

发明人： Masaru Nakamura

IPC分类号： H01L21/00 ,  H01L21/78

CPC分类号： H01L21/78

摘要： A dividing method for a workpiece having a substrate with a film formed on the front side thereof. A first laser beam is applied to the film from the front side of the workpiece along the streets formed on the film, thereby forming a plurality of laser processed grooves along the streets to cut the film along the streets. Thereafter, an adhesive tape is attached to the front side of the workpiece. Thereafter, a second laser beam is applied to the substrate from the back side of the workpiece along the streets in the condition where the focal point of the second laser beam is set inside the substrate, thereby forming a plurality of modified layers inside the substrate along the streets. Thereafter, the adhesive tape is expanded to thereby divide the substrate along the streets, thereby obtaining a plurality of individual devices. Thereafter, the back side of the substrate of each device is ground to remove the modified layers and reduce the thickness of each device to a predetermined thickness.

摘要翻译： 一种具有在其前侧形成有膜的基板的工件的分割方法。 第一激光束沿着形成在膜上的街道从工件的前侧施加到膜上，从而沿着街道形成多个激光加工槽，以沿着街道切割膜。 此后，粘合带附着在工件的正面。 此后，在第二激光束的焦点设置在基板的内部的状态下，沿着街道将第二激光束从工件的背面施加到基板，由此在基板内部形成多个改性层 街头。 此后，将胶带膨胀，从而沿着街道划分基板，从而获得多个单独的装置。 此后，研磨每个器件的衬底的背面以去除改性层，并将每个器件的厚度减小到预定厚度。

公开(公告)号：US08704126B2

公开(公告)日：2014-04-22

申请号：US12248685

申请日：2008-10-09

申请人： Masaru Nakamura

发明人： Masaru Nakamura

IPC分类号： B23K26/00 ,  B23K26/06

CPC分类号： B23K26/0853 ,  B23K26/0006 ,  B23K2101/40 ,  B23K2103/56

摘要： A laser beam machining apparatus includes laser beam irradiation unit for irradiating a wafer held on a chuck table with a laser beam, and control unit. The laser beam irradiation unit includes a laser beam oscillator for oscillating a laser beam with such a wavelength as to be transmitted through said wafer, repetition frequency setting section for setting a repetition frequency of pulses in the laser beam oscillated from the laser beam oscillator. The control unit includes a memory for storing coordinates of an arcuate chamfer part formed at the outer periphery of the wafer and coordinates of a flat surface part surrounded by the chamfer part, and controls the repetition frequency setting section so as to set the repetition frequency of the pulses in the laser beam with which to irradiate the flat surface part to a value suitable for machining of the wafer and as to set the repetition frequency of the pulses in the laser beam with which to irradiate the chamfer part to a value higher than the repetition frequency in the pulses of the laser beam with which to irradiate the flat surface part.

摘要翻译： 一种激光束加工设备，包括：激光束照射单元，用于用激光束照射夹持在卡盘台上的晶片;以及控制单元。 激光束照射单元包括激光束振荡器，用于振荡具有透射通过所述晶片的波长的激光束，重复频率设置部分用于设置从激光束振荡器振荡的激光束中的脉冲的重复频率。 控制单元包括存储器，用于存储形成在晶片外围的弧形倒角部分的坐标和由倒角部分包围的平坦表面部分的坐标，并控制重复频率设置部分，以便设置重复频率 用于将平坦表面部分照射到激光束中的脉冲到适于晶片加工的值，并且将激光束中的脉冲的重复频率设置为高于 用于照射平面部分的激光束的脉冲中的重复频率。

公开(公告)号：US08605708B2

公开(公告)日：2013-12-10

申请号：US13233152

申请日：2011-09-15

申请人： Masaru Nakamura

发明人： Masaru Nakamura

IPC分类号： H04B1/00

CPC分类号： H04B7/0617 ,  G01S13/74 ,  H04B7/026 ,  H04B7/0408 ,  H04B7/0452 ,  H04B7/0697 ,  H04B7/2643 ,  H04W16/28 ,  H04W72/0446 ,  H04W72/046 ,  H04W74/0816 ,  H04W84/18 ,  H04W88/02

摘要： A wireless communication system includes wireless terminals. Each of the wireless terminals includes an SDM transmitting unit that includes antennas and generates directional radio signals to be transmitted to other terminals, each of which is obtained by superimposing radio signals at the antennas, each of which is composed of modulated data for each of the other terminals; a single-system receiving unit; and a TDMA control unit that controls a transmission of the SDM transmitting unit and a reception of the receiving unit in a time division manner. Using a TDMA scheme, the wireless terminals are controlled such that one of the wireless terminals acquires a transmission right for a predetermined time period to simultaneously transmit the generated directional radio signals from the SDM transmitting unit, while during the predetermined time period, the receiving units of the other wireless terminals having no transmission right simultaneously receive their corresponding directional radio signals.

摘要翻译： 无线通信系统包括无线终端。 每个无线终端包括包含天线的SDM发送单元，并且生成要发送到其他终端的定向无线电信号，其中每个终端通过在天线叠加无线电信号而获得，每个由无线电信号组成，每个由 其他终端; 单系统接收单元; 以及TDMA控制单元，其以时分方式控制SDM发送单元的发送和接收单元的接收。 使用TDMA方案，控制无线终端，使得无线终端中的一个在预定时间段内获取发送权限，以在SDM发送单元同时发送生成的定向无线电信号，而在预定时间段期间，接收单元 没有发送权限的其他无线终端同时接收其相应的定向无线电信号。

公开(公告)号：US08476553B2

公开(公告)日：2013-07-02

申请号：US13223941

申请日：2011-09-01

申请人： Satoshi Usuda ,  Kiyoshi Ohsuga ,  Masaru Nakamura

发明人： Satoshi Usuda ,  Kiyoshi Ohsuga ,  Masaru Nakamura

IPC分类号： B23K26/38

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： A method of dividing a workpiece includes: forming a pre-machining alteration region in the inside of a region in which no device is formed; detecting the position of the pre-machining alteration region through infrared imaging by imaging means, to thereby recognize a deviation between the pre-machining alteration region and a planned dividing line as machining position correction information; and forming a main machining alteration region by utilizing the machining position correction information, whereby the workpiece can be accurately divided along the planned dividing lines into individual devices.

摘要翻译： 分割工件的方法包括：在不形成装置的区域的内部形成预加工变更区域; 通过成像装置通过红外成像来检测预加工变更区域的位置，从而将预加工变更区域与计划分割线之间的偏差识别为加工位置校正信息; 并通过利用加工位置校正信息形成主加工变更区域，由此能够将工件沿着规划的分割线精确地划分成单独的装置。

公开(公告)号：US20110034007A1

公开(公告)日：2011-02-10

申请号：US12837235

申请日：2010-07-15

申请人： Yoshiaki Yodo ,  Masaru Nakamura

发明人： Yoshiaki Yodo ,  Masaru Nakamura

IPC分类号： H01L21/304

CPC分类号： H01L21/78

摘要： A dividing method for a platelike workpiece having a two-layer structure such that a solder layer (metal layer) is formed on the back side of a wafer (substrate). First, a modified layer is formed in the wafer along each division line formed on the front side of the wafer. Thereafter, the workpiece is bent along each division line to thereby divide the wafer along each division line from the corresponding modified layer as a starting point and simultaneously form a weak portion in the solder layer along each division line. Thereafter, an expandion tape attached to the solder layer is expanded to apply an external force to the solder layer, thereby dividing the solder layer along each division line from the corresponding weak portion as a starting point. Thus, the workpiece is completely divided.

摘要翻译： 具有双层结构的板状工件的分割方法，使得在晶片（基板）的背面上形成焊料层（金属层）。 首先，沿着形成在晶片的前侧上的每个划分线，在晶片中形成改性层。 此后，工件沿着每个分割线弯曲，从而沿着每个分割线将晶片与相应的改性层作为起始点，并沿着分割线同时形成焊料层中的弱部分。 此后，扩大连接于焊料层的扩展带，以向焊料层施加外力，从而沿着每个划分线将焊料层与相应的弱部分划分为起点。 因此，工件完全分开。