公开(公告)号：US07400222B2

公开(公告)日：2008-07-15

申请号：US10864077

申请日：2004-06-08

申请人： Young Se Kwon ,  Ju Hyun Ko ,  Seong Ho Shin

发明人： Young Se Kwon ,  Ju Hyun Ko ,  Seong Ho Shin

IPC分类号： H01P3/06

CPC分类号： H05K1/0221 ,  H01P3/06 ,  H01P11/005 ,  H05K1/0272 ,  H05K3/4614 ,  H05K2201/0379 ,  H05K2201/09809 ,  H05K2201/09981

摘要： Disclosed herein are a transmission line of coaxial type and a manufacturing method thereof, capable of preventing a radiative signal loss of signal lines during transmission of an RF signal and removing signal interference between adjacent signal lines, thus allowing signal lines to be compactly arrayed during a manufacture of IC, and reducing a dimension of the IC. The transmission line of coaxial type includes grooves provided on a semiconductor substrate, a first ground layer, an electrically conductive epoxy coated on a flat part of the first ground layer except the grooves, second ground layers provided on the electrically conductive epoxy, a dielectric film provided at a position above the grooves and the second ground layers, a third ground layer provided on an upper surface of the dielectric film, and signal lines placed in spaces defined by the grooves and a lower surface of the dielectric film. In this case, the electrically conductive epoxy is coated on only contact surfaces of the first and second ground layers, and the signal lines are attached to the lower surface of the dielectric film.

摘要翻译： 这里公开了一种同轴型传输线及其制造方法，其能够防止RF信号传输期间的信号线的辐射信号损失并消除相邻信号线之间的信号干扰，从而允许信号线在 制造IC，并减小IC的尺寸。 同轴型传输线包括设置在半导体衬底上的沟槽，第一接地层，涂覆在第一接地层的除了槽之外的平坦部分上的导电环氧树脂，设置在导电环氧树脂上的第二接地层，介电膜 设置在沟槽和第二接地层上方的位置，设置在电介质膜的上表面上的第三接地层和放置在由沟槽和电介质膜的下表面限定的空间中的信号线。 在这种情况下，仅在第一和第二接地层的接触表面上涂覆导电环氧树脂，并且信号线附着到电介质膜的下表面。

公开(公告)号：US07268027B2

公开(公告)日：2007-09-11

申请号：US11228471

申请日：2005-09-15

申请人： Young Se Kwon ,  Jung Ho Cha

发明人： Young Se Kwon ,  Jung Ho Cha

IPC分类号： H01L21/84 ,  H01L21/338 ,  H01L21/331

CPC分类号： G02B6/12004 ,  G02B6/4214 ,  H01L27/144 ,  H01L29/7787 ,  H01L31/03046 ,  H01L31/1085 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Disclosed is a method of manufacturing a photoreceiver, including sequentially laminating a buffer layer, a channel layer, a barrier layer, and a cap layer on a substrate; forming a mesa for HEMT and MSM PD by removing the buffer layer, the channel layer, the barrier layer, and the cap layer with the exception of a region corresponding to HEMT and MSM PD; forming a source electrode and a drain electrode of HEMT; removing the cap layer from a region corresponding to a gate electrode of HEMT and a Schottky electrode of MSM PD; forming the gate electrode of HEMT and the Schottky electrode of HEMT on the cap layer-removed region; and removing the cap layer, the barrier layer and the channel layer from a region corresponding to an optical waveguide, to expose the optical waveguide.

摘要翻译： 公开了一种制造光接收器的方法，包括在衬底上依次层叠缓冲层，沟道层，势垒层和覆盖层; 除了对应于HEMT和MSM PD的区域之外，通过去除缓冲层，沟道层，势垒层和盖层，形成HEMT和MSM PD的台面; 形成HEMT的源电极和漏电极; 从与HEMT的栅电极和MSM PD的肖特基电极对应的区域中去除覆盖层; 在除去盖的层上形成HEMT的栅电极和HEMT的肖特基电极; 以及从对应于光波导的区域去除覆盖层，阻挡层和沟道层，以露出光波导。

公开(公告)号：US4950622A

公开(公告)日：1990-08-21

申请号：US344317

申请日：1989-04-27

申请人： Young Se Kwon ,  Tae Kyung Yoo

发明人： Young Se Kwon ,  Tae Kyung Yoo

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/18

CPC分类号： H01S5/18 ,  Y10S148/026 ,  Y10S148/095

摘要： A method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor LASER diode by a selective epitaxy method which is capable of forming naturally a 45.degree. mirror reflective face during the epitaxy method itself. The method comprises the steps of forming a silicon oxide or silicon nitride layer on one side of a n-type single crystal GaAs substrate as a mask, removing the mask of the regions each for forming a 45.degree. mirror reflective face and a LASER diode by use of a photolithography and a chemicaletching, forming the two layers by removing the photoresistor on the remaining mask after a selective epitaxy process and converting a slant face of the LASER diode into a vertical face, depositing a n-type metal layer on the other side of the substrate, and carrying out a heat treatment.

摘要翻译： 一种通过选择性外延法制造表面发射型AlGaAs / GaAs半导体激光二极管的方法，其能够在外延法本身内自然形成45°镜面反射面。 该方法包括以下步骤：在n型单晶GaAs衬底的一侧上形成氧化硅或氮化硅层作为掩模，除去用于形成45°镜面反射面的区域和激光二极管的掩模 使用光刻和化学蚀刻，通过在选择性外延工艺之后去除剩余掩模上的光敏电阻并将激光二极管的倾斜面转换成垂直面来形成两层，在另一侧沉积n型金属层 并进行热处理。

公开(公告)号：US07184630B2

公开(公告)日：2007-02-27

申请号：US11110100

申请日：2005-04-19

申请人： Young Se Kwon ,  Bun-Joong Kim

发明人： Young Se Kwon ,  Bun-Joong Kim

IPC分类号： G02B6/30 ,  G02B6/00

CPC分类号： G02B6/3636 ,  G02B6/30 ,  G02B6/3652 ,  G02B6/3692

摘要： The present invention relates to an optical coupling module for optically coupling an optical fiber with an optical waveguide, and a method of fabricating the optical coupling module. In an optical coupling module for optically coupling an optical network with a planar lightwave circuit (PLC), an etched groove for disposition of the optical fiber and an etched groove for mounting of the optical waveguide are exposed using a mask having mask patterns that are aligned with each other, and then anisotropically etched. By doing so, the two grooves can be precisely aligned with each other at one time, compared with a conventional method in which an exposure process is carried out two or more times. Accordingly, an inexpensive structure having high optical coupling efficiency upon manual alignment can be obtained. In addition, since a tapered structure in which an inlet is larger than a body is employed in the optical waveguide, tolerance in vertical and horizontal alignment upon manual alignment can be broaden, resulting in improvement of optical coupling efficiency and facilitation of manual alignment. Furthermore, by utilizing a thick insulation film on the substrate or a thick insulation film of the optical waveguide itself as a board, a structure for allowing assembly into and application to a high-frequency electric-optical circuit can be obtained.

摘要翻译： 本发明涉及光耦合光波导的光耦合模块及其制造方法。 在用于光学耦合光网络与平面光波电路（PLC）的光耦合模块中，用于配置光纤的蚀刻凹槽和用于安装光波导的蚀刻凹槽使用具有对准的掩模图案的掩模来曝光 彼此之间，然后各向异性蚀刻。 通过这样做，与其中曝光处理进行两次或更多次的常规方法相比，两个凹槽可以一次精确对准。 因此，可以获得在手动对准时具有高光耦合效率的便宜的结构。 此外，由于在光波导中采用入口大于体的锥形结构，因此可以使手动对准时的垂直和水平对准中的公差变宽，从而提高光耦合效率并促进手动对准。 此外，通过将基板上的厚绝缘膜或光波导本身的厚绝缘膜用作基板，可以获得用于组装到高频电光电路中并应用于其的结构。

公开(公告)号：US06372594B1

公开(公告)日：2002-04-16

申请号：US09749785

申请日：2000-12-28

申请人： Soo Kun Jeon ,  Moon Jung Kim ,  Kyoung Hoon Yang ,  Young Se Kwon

发明人： Soo Kun Jeon ,  Moon Jung Kim ,  Kyoung Hoon Yang ,  Young Se Kwon

IPC分类号： H01L21331

摘要： Disclosed is a method for fabricating a self-aligned submicron gate electrode using an anisotropic etching process. The method involves the steps of laminating a dummy emitter defining a dummy emitter region over a heterojunction bipolar transistor structure including layers sequentially formed over a semiconductor substrate to define a base region, an emitter region, and an emitter cap region, respectively, defining a line having a width of about 1 micron on the dummy emitter by use of a photoresist while using a contact aligner, selectively anisotropic etching the dummy emitter at a region where the line is defined, to allow the dummy emitter to have an etched portion having a bottom surface with a width less than the width of the line defined by the photoresist, and depositing a contact metal on the etched portion of the dummy emitter, thereby forming a gate. In accordance with the present invention, a reliable submicron gate can be fabricated using a simple anisotropic wet etch process and an inexpensive contact aligner. Accordingly, the manufacturing costs can be reduced. In the formation of a base electrode involved in the fabrication of an HBT device, the present invention also provides an effect of reducing the distance between a base and an emitter, thereby achieving a reduction in base resistance, by virtue of a self-alignment using a V-shaped submicron gate.