公开(公告)号：US4950622A

公开(公告)日：1990-08-21

申请号：US344317

申请日：1989-04-27

申请人： Young Se Kwon ,  Tae Kyung Yoo

发明人： Young Se Kwon ,  Tae Kyung Yoo

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/18

CPC分类号： H01S5/18 ,  Y10S148/026 ,  Y10S148/095

摘要： A method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor LASER diode by a selective epitaxy method which is capable of forming naturally a 45.degree. mirror reflective face during the epitaxy method itself. The method comprises the steps of forming a silicon oxide or silicon nitride layer on one side of a n-type single crystal GaAs substrate as a mask, removing the mask of the regions each for forming a 45.degree. mirror reflective face and a LASER diode by use of a photolithography and a chemicaletching, forming the two layers by removing the photoresistor on the remaining mask after a selective epitaxy process and converting a slant face of the LASER diode into a vertical face, depositing a n-type metal layer on the other side of the substrate, and carrying out a heat treatment.

摘要翻译： 一种通过选择性外延法制造表面发射型AlGaAs / GaAs半导体激光二极管的方法，其能够在外延法本身内自然形成45°镜面反射面。 该方法包括以下步骤：在n型单晶GaAs衬底的一侧上形成氧化硅或氮化硅层作为掩模，除去用于形成45°镜面反射面的区域和激光二极管的掩模 使用光刻和化学蚀刻，通过在选择性外延工艺之后去除剩余掩模上的光敏电阻并将激光二极管的倾斜面转换成垂直面来形成两层，在另一侧沉积n型金属层 并进行热处理。

公开(公告)号：US06346431B1

公开(公告)日：2002-02-12

申请号：US09612917

申请日：2000-07-10

申请人： Tae Kyung Yoo ,  Jae Eung Oh

发明人： Tae Kyung Yoo ,  Jae Eung Oh

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/09

摘要： Quantum dot infrared detection device and method for fabricating the same, which is a new concept of detection device in which quantum dots in the quantum dot part having a stack of alternative quantum dots and separating layers are doped with impurities, so that the quantum dot part itself absorbs infrared ray and serves as a channel for transferring electrons generated by the infrared ray absorption, for enhancing device performance and a device uniformity, and simplifying a device structure and a device fabrication process.

摘要翻译： 量子点红外检测装置及其制造方法，其中检测装置的新概念是其中量子点部分中具有替代量子点和分离层的堆叠的量子点掺杂有杂质，使得量子点部分 本身吸收红外线并且用作用于传递由红外线吸收产生的电子的通道，用于增强器件性能和器件均匀性，并且简化了器件结构和器件制造工艺。

公开(公告)号：US06337223B1

公开(公告)日：2002-01-08

申请号：US09351439

申请日：1999-07-12

申请人： Wook Kim ,  Tae Kyung Yoo

发明人： Wook Kim ,  Tae Kyung Yoo

IPC分类号： H01L2120

CPC分类号： H01S5/02 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/10 ,  H01S5/0205 ,  H01S5/32341 ,  H01S2304/12

摘要： A semiconductor optical device and a method for fabricating the same. The semiconductor optical device comprises a substrate, a semiconductor electrode layer of a first conductive type formed on the substrate and having a groove formed to a desired depth therein, a semiconductor layer of the first conductive type formed from side walls of the groove up to a part of the semiconductor electrode layer of the first conductive type on the periphery of the groove, a cladding layer of the first conductive type, an active layer of the first conductive type, a cladding layer of a second conductive type and a semiconductor electrode layer of the second conductive type sequentially formed on the semiconductor layer of the first conductive type, and electrodes of the first and second conductive types formed respectively on the semiconductor electrode layers of the first and second conductive types.

公开(公告)号：US20090014751A1

公开(公告)日：2009-01-15

申请号：US11795995

申请日：2005-10-06

申请人： Chang-Tae Kim ,  Keuk Kim ,  Tae Kyung Yoo

发明人： Chang-Tae Kim ,  Keuk Kim ,  Tae Kyung Yoo

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/22

摘要： Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.

摘要翻译： 本文公开了一种包括多个氮化物半导体层的氮化物半导体发光器件，其包括衬底和沉积在衬底上的有源层，其中衬底设置有突起，以使有源层中产生的光发射出 发光器件和每个突起具有彼此不平行的第一散射面和第二散射面。

公开(公告)号：US06469313B2

公开(公告)日：2002-10-22

申请号：US10026809

申请日：2001-12-27

申请人： Wook Kim ,  Tae Kyung Yoo

发明人： Wook Kim ,  Tae Kyung Yoo

IPC分类号： H01L2906

CPC分类号： H01S5/02 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/10 ,  H01S5/0205 ,  H01S5/32341 ,  H01S2304/12

摘要： A semiconductor optical device and a method for fabricating the same. The semiconductor optical device comprises a substrate, a semiconductor electrode layer of a first conductive type formed on the substrate and having a groove formed to a desired depth therein, a semiconductor layer of the first conductive type formed from side walls of the groove up to a part of the semiconductor electrode layer of the first conductive type on the periphery of the groove, a cladding layer of the first conductive type, an active layer of the first conductive type, a cladding layer of a second condcutive type and a semiconductor electrode layer of the second conductive type sequentially formed on the semiconductor layer of the first conductive type, and electrodes of the first and second conductive types formed respectively on the semiconductor electrode layers of the first and second conductive types.

摘要翻译： 一种半导体光学器件及其制造方法。 半导体光学器件包括衬底，形成在衬底上的第一导电类型的半导体电极层，并且具有形成在其中所需深度的沟槽;第一导电类型的半导体层由沟槽的侧壁形成直到 在槽周边的第一导电类型的半导体电极层的一部分，第一导电类型的包覆层，第一导电类型的有源层，第二固化型的包覆层和半导体电极层 顺序地形成在第一导电类型的半导体层上的第二导电类型以及分别形成在第一和第二导电类型的半导体电极层上的第一和第二导电类型的电极。

公开(公告)号：US07923749B2

公开(公告)日：2011-04-12

申请号：US10599232

申请日：2005-03-25

申请人： Tae Kyung Yoo ,  Eun Hyun Park

发明人： Tae Kyung Yoo ,  Eun Hyun Park

IPC分类号： H01L33/00

CPC分类号： H01L21/3148 ,  H01L21/02447 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/318 ,  H01L21/3185 ,  H01L33/02 ,  H01L33/22 ,  H01L33/40

摘要： The present invention relates a III-nitride compound semiconductor light emitting device in which a first layer composed of a carbon-containing compound layer, such as an n-type or p-type silicon carbide (SiC), silicon carbon nitride (SiCN) or carbon nitride layer (CN) layer, is formed on the p-type III-nitride semiconductor layer of the existing III-nitride semiconductor light emitting device, and a second layer composed of a III-nitride semiconductor layer with a given thickness is formed on the first layer.

摘要翻译： 本发明涉及一种III族氮化物化合物半导体发光器件，其中由诸如n型或p型碳化硅（SiC），碳氮化硅（SiCN）或碳氮化硅（SiCN）等含碳化合物层构成的第一层 在现有的III族氮化物半导体发光器件的p型III族氮化物半导体层上形成碳氮化物层（CN）层，由具有给定厚度的III族氮化物半导体层构成的第二层形成在 第一层。

公开(公告)号：US20080149918A1

公开(公告)日：2008-06-26

申请号：US10597617

申请日：2005-02-05

申请人： Tae Kyung Yoo ,  Eun Hyun Park

发明人： Tae Kyung Yoo ,  Eun Hyun Park

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14

摘要： The present invention provides a III-nitride compound semiconductor light emitting device comprising an active layer (30) which emits light and is interposed between a lower contact layer (20) made of n-GaN and an upper contact layer (40) made of p-GaN, in which a sequential stack of a lattice mismatch-reducing layer L3 made of InxGa1-xN, an electron supply layer L4 made of n-GaN or n-AlyGa1-yN and a crystal restoration layer L5 made of InzGa1-zN is interposed between the lower contact layer and the active layer, and further comprising an electron acceleration layer L1 made of n-GaN or undoped GaN and a heterojunction electron barrier-removing layer L2, thereby the lattice mismatch between the lower contact layer (20) and the active layer (30) can be reduced.

摘要翻译： 本发明提供了一种III族氮化物化合物半导体发光器件，其包括发射光的有源层（30）并且介于由n-GaN制成的下接触层（20）和由p形成的上接触层（40）之间 -GaN，其中由In x Ga 1-x N制成的晶格失配减小层L 3的顺序堆叠，由n形成的电子供应层L 4 -GaN或n-Al 1 Ga 1-y N和由In z Ga 1-y N制成的晶体恢复层L 5， z N介于下接触层和有源层之间，并且还包括由n-GaN或未掺杂的GaN制成的电子加速层L 1和异质结电子势垒去除层L 2，由此晶格失配 可以减小下接触层（20）和有源层（30）之间的距离。

公开(公告)号：US06508878B2

公开(公告)日：2003-01-21

申请号：US09794615

申请日：2001-02-28

申请人： Chin Kyo Kim ,  Tae Kyung Yoo

发明人： Chin Kyo Kim ,  Tae Kyung Yoo

IPC分类号： C30B2516

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： GaN system compound semiconductor and method for growing a crystal thereof, which can significantly reduce a concentration of crystalline defects caused by lattice mismatch by growing a GaN system compound semiconductor of GaN or InxGa1-xN by using InxAl1-xN crystal on a substrate as an intermediate buffer layer, the method including the steps of (1) providing a sapphire substrate, (2) growing an intermediate buffer layer of InxAl1-xN on the sapphire substrate, and (3) growing GaN or InxGa1-xN system compound semiconductor on the intermediate buffer layer.

摘要翻译： GaN系化合物半导体及其晶体生长方法，其可以通过在基板上使用In x Al 1-x N晶体作为中间体来生长GaN或In x Ga 1-x N的GaN系化合物半导体而显着降低由晶格失配引起的晶体缺陷的浓度 缓冲层，该方法包括以下步骤：（1）提供蓝宝石衬底，（2）在蓝宝石衬底上生长InxAl1-xN的中间缓冲层，以及（3）在中间层上生长GaN或In x Ga 1-x N系化合物半导体 缓冲层。

公开(公告)号：US5707892A

公开(公告)日：1998-01-13

申请号：US560714

申请日：1995-11-20

申请人： Tae Kyung Yoo ,  Meoung Whan Cho ,  Ju Ok Seo ,  Shi Jong Leem ,  Min Soo Noh

发明人： Tae Kyung Yoo ,  Meoung Whan Cho ,  Ju Ok Seo ,  Shi Jong Leem ,  Min Soo Noh

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/22 ,  H01S5/227 ,  H01L21/20

CPC分类号： H01S5/227 ,  H01S5/164 ,  H01S2304/06 ,  H01S5/22 ,  H01S5/2275

摘要： A method for fabricating a semiconductor laser diode includes the steps of forming a double hetero structured semiconductor layer on a substrate, forming a dielectric layer on the double hetero structured semiconductor layer, selectively etching the dielectric layer to expose a portion of the double hetero structured semiconductor layer, selectively removing the exposed semiconductor layer using the dielectric layer as a mask by liquid phase etching, and re growing a semiconductor layer on the etched portion by liquid phase epitaxy.

摘要翻译： 一种制造半导体激光二极管的方法包括以下步骤：在衬底上形成双异质结构半导体层，在双异质结构半导体层上形成电介质层，选择性地蚀刻电介质层以暴露双异质结构半导体的一部分 层，通过液相蚀刻使用电介质层作为掩模选择性地去除暴露的半导体层，并且通过液相外延再生长在蚀刻部分上的半导体层。

公开(公告)号：US20090321713A1

公开(公告)日：2009-12-31

申请号：US11988495

申请日：2005-10-18

申请人： Tae Kyung Yoo ,  Eun Hyun Park

发明人： Tae Kyung Yoo ,  Eun Hyun Park

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： The present invention is to provide a method for controlling an active layer of a Hi-nitride semiconductor light emitting device by doping a barrier layer(s) selected from the active layer to suppress light emission in a specific well layer(s).

摘要翻译： 本发明提供一种通过掺杂从有源层选择的势垒层来​​抑制特定阱层中的发光来控制氮化镓半导体发光器件的有源层的方法。