公开(公告)号：US06372594B1

公开(公告)日：2002-04-16

申请号：US09749785

申请日：2000-12-28

申请人： Soo Kun Jeon ,  Moon Jung Kim ,  Kyoung Hoon Yang ,  Young Se Kwon

发明人： Soo Kun Jeon ,  Moon Jung Kim ,  Kyoung Hoon Yang ,  Young Se Kwon

IPC分类号： H01L21331

摘要： Disclosed is a method for fabricating a self-aligned submicron gate electrode using an anisotropic etching process. The method involves the steps of laminating a dummy emitter defining a dummy emitter region over a heterojunction bipolar transistor structure including layers sequentially formed over a semiconductor substrate to define a base region, an emitter region, and an emitter cap region, respectively, defining a line having a width of about 1 micron on the dummy emitter by use of a photoresist while using a contact aligner, selectively anisotropic etching the dummy emitter at a region where the line is defined, to allow the dummy emitter to have an etched portion having a bottom surface with a width less than the width of the line defined by the photoresist, and depositing a contact metal on the etched portion of the dummy emitter, thereby forming a gate. In accordance with the present invention, a reliable submicron gate can be fabricated using a simple anisotropic wet etch process and an inexpensive contact aligner. Accordingly, the manufacturing costs can be reduced. In the formation of a base electrode involved in the fabrication of an HBT device, the present invention also provides an effect of reducing the distance between a base and an emitter, thereby achieving a reduction in base resistance, by virtue of a self-alignment using a V-shaped submicron gate.

公开(公告)号：US09054276B2

公开(公告)日：2015-06-09

申请号：US13409391

申请日：2012-03-01

申请人： Soo Kun Jeon

发明人： Soo Kun Jeon

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/14 ,  H01L33/42 ,  H01L33/20

CPC分类号： H01L33/38 ,  H01L33/145 ,  H01L33/20 ,  H01L33/42

摘要： The present disclosure relates to a semiconductor light-emitting device, which includes: a first semiconductor layer having first conductivity; a second semiconductor layer having second conductivity different from the first conductivity; an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; a first pad electrode electrically connected to the second semiconductor layer; a high-resistance body partially disposed on the second semiconductor layer; and a branch electrode disposed on the second semiconductor layer, partially extending over the high-resistance body, and electrically connected to the first pad electrode.

摘要翻译： 本公开涉及一种半导体发光器件，其包括：具有第一导电性的第一半导体层; 具有不同于所述第一导电性的第二导电性的第二半导体层; 设置在第一半导体层和第二半导体层之间的有源层，并且通过电子和空穴的复合产生光; 电连接到第二半导体层的第一焊盘电极; 部分地设置在第二半导体层上的高电阻体; 以及分支电极，其设置在所述第二半导体层上，部分地延伸越过所述高电阻体，并且电连接到所述第一焊盘电极。

公开(公告)号：US08829558B2

公开(公告)日：2014-09-09

申请号：US13431080

申请日：2012-03-27

申请人： Soo Kun Jeon

发明人： Soo Kun Jeon

IPC分类号： H01L33/38 ,  H01L33/36 ,  H01L33/14 ,  H01L33/42 ,  H01L33/20

CPC分类号： H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/42

摘要： The present disclosure relates to a semiconductor light-emitting device, which includes: a plurality of semiconductor layers composed of a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode disposed on the second semiconductor layer; a high-resistance body interposed between the second semiconductor layer and the first electrode; and a light-transmitting conductive film having an opening through which the high-resistance body is exposed, the first electrode being brought into contact with the light-transmitting conductive film, which is disposed on the high-resistance body, and the high-resistance body, which is exposed through the opening.

摘要翻译： 本发明涉及半导体发光器件，其包括：由第一半导体层，第二半导体层和有源层组成的多个半导体层; 设置在所述第二半导体层上的第一电极; 介于所述第二半导体层和所述第一电极之间的高电阻体; 以及透光导电膜，具有露出高电阻体的开口，第一电极与设置在高电阻体上的透光性导电膜接触，高电阻 身体暴露在开口处。

公开(公告)号：US07432534B2

公开(公告)日：2008-10-07

申请号：US10544271

申请日：2005-03-04

申请人： Tae-Kyung Yoo ,  Chang Tae Kim ,  Eun Hyun Park ,  Soo Kun Jeon

发明人： Tae-Kyung Yoo ,  Chang Tae Kim ,  Eun Hyun Park ,  Soo Kun Jeon

IPC分类号： H01L27/15

CPC分类号： H01L33/32

摘要： The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, a SiaCbNc (a≧0,b>0,c≧0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc layer having an n-type conductivity and a thickness of 5 Å to 500 Å for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc layer. According to the present invention, a SiaCbNc (a≧0,b>0,c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor layer and a p-side electrode. Therefore, the present invention can solve the conventional problem.

摘要翻译： 本发明涉及包含多个III族氮化物半导体层的III族氮化物半导体发光器件，所述III族氮化物半导体层包括通过电子和空穴的复合发射光的有源层，所述多个III族氮化物半导体层具有p型III- （a> = 0，b> 0，c> = 0）的氮化物半导体层， ）层生长在p型III族氮化物半导体层上，具有n型导电性的Si a C b C n C c C层，以及 通过隧道将待注入到p型III族氮化物半导体层中的空穴的厚度为5埃至500埃，以及形成在Si III-B层上的p侧电极 N 层。 根据本发明，可以使用一种或多种C 1 -C 4烷基（a> = 0，b> 0，c> 0）的Si 可以在p型氮化物半导体层和p侧电极之间插入高浓度的掺杂。 因此，本发明可以解决常规问题。

公开(公告)号：US20120223357A1

公开(公告)日：2012-09-06

申请号：US13409391

申请日：2012-03-01

申请人： Soo Kun Jeon

发明人： Soo Kun Jeon

IPC分类号： H01L33/38

CPC分类号： H01L33/38 ,  H01L33/145 ,  H01L33/20 ,  H01L33/42

摘要： The present disclosure relates to a semiconductor light-emitting device, which includes: a first semiconductor layer having first conductivity; a second semiconductor layer having second conductivity different from the first conductivity; an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; a first pad electrode electrically connected to the second semiconductor layer; a high-resistance body partially disposed on the second semiconductor layer; and a branch electrode disposed on the second semiconductor layer, partially extending over the high-resistance body, and electrically connected to the first pad electrode.

摘要翻译： 本公开涉及一种半导体发光器件，其包括：具有第一导电性的第一半导体层; 具有不同于所述第一导电性的第二导电性的第二半导体层; 设置在第一半导体层和第二半导体层之间的有源层，并且通过电子和空穴的复合产生光; 电连接到第二半导体层的第一焊盘电极; 部分地设置在第二半导体层上的高电阻体; 以及分支电极，其设置在所述第二半导体层上，部分地延伸越过所述高电阻体，并且电连接到所述第一焊盘电极。

公开(公告)号：US20090085057A1

公开(公告)日：2009-04-02

申请号：US12195235

申请日：2008-08-20

申请人： Eun Hyun Park ,  Soo Kun Jeon ,  Jae Gu Lim

发明人： Eun Hyun Park ,  Soo Kun Jeon ,  Jae Gu Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/04

摘要： The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 100 Å in an n-side contact layer.

摘要翻译： 本发明涉及一种III族氮化物半导体发光器件，更具体地说，涉及一种III族氮化物半导体发光器件，其可以通过提供厚度大于100埃的未掺杂的GaN层来促进电流扩散并改善静电放电特性 n侧接触层。

公开(公告)号：US08629458B2

公开(公告)日：2014-01-14

申请号：US13642637

申请日：2011-03-18

申请人： Soo Kun Jeon

发明人： Soo Kun Jeon

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/647 ,  H01L24/32 ,  H01L33/382 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

摘要： The present disclosure relates to a compound semiconductor light-emitting element comprising: a frame; an adhesive provided on the frame; a light-emitting part which is secured in position on the frame by means of the adhesive and which includes a substrate, a first compound semiconductor layer formed on the substrate and having a first type of conductivity, a second compound semiconductor layer having a second type of conductivity that is different from the first type of conductivity, and an active layer disposed between the first compound semiconductor layer and the second compound semiconductor layer to generate light via electron-hole recombination; and a spacer disposed between the light-emitting part and the frame to create a gap therebetween.

摘要翻译： 本公开涉及一种化合物半导体发光元件，包括：框架; 设置在框架上的粘合剂; 发光部件，其通过粘合剂固定在框架上的位置，并且包括基板，形成在基板上并具有第一类型导电性的第一化合物半导体层，具有第二类型的第二化合物半导体层 不同于第一类型的导电性的导电性;以及设置在第一化合物半导体层和第二化合物半导体层之间以通过电子 - 空穴复合产生光的有源层; 以及设置在发光部和框架之间以在它们之间形成间隙的间隔件。

公开(公告)号：US20120267672A1

公开(公告)日：2012-10-25

申请号：US13431080

申请日：2012-03-27

申请人： Soo Kun Jeon

发明人： Soo Kun Jeon

IPC分类号： H01L33/36

CPC分类号： H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/42

摘要： The present disclosure relates to a semiconductor light-emitting device, which includes: a plurality of semiconductor layers composed of a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode disposed on the second semiconductor layer; a high-resistance body interposed between the second semiconductor layer and the first electrode; and a light-transmitting conductive film having an opening through which the high-resistance body is exposed, the first electrode being brought into contact with the light-transmitting conductive film, which is disposed on the high-resistance body, and the high-resistance body, which is exposed through the opening.

摘要翻译： 本发明涉及半导体发光器件，其包括：由第一半导体层，第二半导体层和有源层组成的多个半导体层; 设置在所述第二半导体层上的第一电极; 介于所述第二半导体层和所述第一电极之间的高电阻体; 以及透光导电膜，具有露出高电阻体的开口，第一电极与设置在高电阻体上的透光性导电膜接触，高电阻 身体暴露在开口处。

公开(公告)号：US07498244B2

公开(公告)日：2009-03-03

申请号：US10543318

申请日：2004-08-21

申请人： Soo Kun Jeon ,  Moon Sik Jang

发明人： Soo Kun Jeon ,  Moon Sik Jang

IPC分类号： H01L21/36

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/36 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： The present invention relates to a method for fabricating a gallium nitride(GaN) based nitride layer including a step of forming a silicon carbide buffer layer on a substrate, a step of forming a wetting layer having a composition of In(x1)Ga(y1)N (0

摘要翻译： 本发明涉及一种制造基于氮化镓（GaN）的氮化物层的方法，包括在衬底上形成碳化硅缓冲层的步骤，形成具有In（x1）Ga（y1）的组成的润湿层的步骤 ）在碳化硅缓冲层上的N（0

公开(公告)号：US20060261344A1

公开(公告)日：2006-11-23

申请号：US10544271

申请日：2005-03-04

申请人： Tae-Kyung Yoo ,  Chang Tae Kim ,  Eun Park ,  Soo Kun Jeon

发明人： Tae-Kyung Yoo ,  Chang Tae Kim ,  Eun Park ,  Soo Kun Jeon

IPC分类号： H01L31/0312

CPC分类号： H01L33/32

摘要： The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, an SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer having an n-type conductivity and a thickness of 5 Å to 500 Å for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer. Generally, in III-nitride semiconductor light emitting devices, if a p-side electrode is formed directly on a p-type nitride semiconductor, high contact resistance is generated due to a high energy bandgap and low doping efficiency of the p-type nitride semiconductor. This makes the efficiency of the device degraded. According to the present invention, however, a SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor and a p-side electrode. Therefore, the present invention can solve the conventional problem.

摘要翻译： 本发明涉及包含多个III族氮化物半导体层的III族氮化物半导体发光器件，所述III族氮化物半导体层包括通过电子和空穴的复合发射光的有源层，所述多个III族氮化物半导体层具有p型III- （a> = 0，b> 0，c> = 0）的氮化物半导体层， ，a + c> 0）层，（a + c> 0）层（a（c​​ + > = 0，b> 0，c> = 0，a + c> 0）层，对于要注入到p型III族氮化物半导体中的空穴，具有n型导电性和厚度为5埃至500埃 （a> = 0，b> 0，...，b）上形成的p侧电极， c> = 0，a + c> 0）层。 通常，在III族氮化物半导体发光器件中，如果p侧电极直接形成在p型氮化物半导体上，则由于p型氮化物半导体的高能带隙和低掺杂效率而产生高接触电阻 。 这使得设备的效率降低。 然而，根据本发明，一个或更多个（a> = 0，b> 0，c> = 0） ，可以掺杂高浓度的a + c> 0）层介于p型氮化物半导体和p侧电极之间。 因此，本发明可以解决常规问题。