公开(公告)号：US08728942B2

公开(公告)日：2014-05-20

申请号：US13390764

申请日：2010-08-20

申请人： Shinichi Ogata ,  Kazushige Takaishi ,  Hironori Nishimura ,  Shigeru Okuuchi ,  Shunsuke Mikuriya ,  Yuichi Nakayoshi

发明人： Shinichi Ogata ,  Kazushige Takaishi ,  Hironori Nishimura ,  Shigeru Okuuchi ,  Shunsuke Mikuriya ,  Yuichi Nakayoshi

IPC分类号： H01L21/302

CPC分类号： H01L21/02024

摘要： Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface.

摘要翻译： 使用由包含水溶性聚合物的无磨粒的碱性溶液构成的抛光液对硅晶片的前表面进行镜面抛光，简化了抛光工艺，从而导致生产率的提高和成本的降低，降低了密度 LPD可归因于处理并发生在镜面抛光晶片的前表面，从而提高了晶片正面的表面粗糙度。

公开(公告)号：US08296961B2

公开(公告)日：2012-10-30

申请号：US12694742

申请日：2010-01-27

申请人： Yuichi Nakayoshi ,  Hiroshi Takai ,  Hironori Nishimura

发明人： Yuichi Nakayoshi ,  Hiroshi Takai ,  Hironori Nishimura

IPC分类号： G01B3/20 ,  B24B49/02

CPC分类号： B24B37/20 ,  B24B37/042 ,  B24B49/105 ,  B24B49/18

摘要： A polishing pad thickness measuring method measures the thickness of a polishing pad attached to an upper surface of a surface plate. The polishing pad thickness measuring method measures a first distance between an upper surface of the polishing pad and a reference position on a vertical line perpendicular to the surface of the polishing pad and a second distance between an upper surface of the surface plate and the reference position on the vertical line, and calculates the thickness of the polishing pad from the difference between the first and second distances.

摘要翻译： 抛光垫厚度测量方法测量附着在表面板上表面的抛光垫的厚度。 抛光垫厚度测量方法测量抛光垫的上表面与垂直于抛光垫表面的垂直线上的基准位置之间的第一距离，并且测量表面板的上表面与基准位置之间的第二距离 并且从第一和第二距离之间的差计算抛光垫的厚度。

公开(公告)号：US20120156878A1

公开(公告)日：2012-06-21

申请号：US13390764

申请日：2010-08-20

申请人： Shinichi Ogata ,  Kazushige Takaishi ,  Hironori Nishimura ,  Shigeru Okuuchi ,  Shunsuke Mikuriya ,  Yuichi Nakayoshi

发明人： Shinichi Ogata ,  Kazushige Takaishi ,  Hironori Nishimura ,  Shigeru Okuuchi ,  Shunsuke Mikuriya ,  Yuichi Nakayoshi

IPC分类号： H01L21/306

CPC分类号： H01L21/02024

摘要： Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface.

摘要翻译： 使用由包含水溶性聚合物的无磨粒的碱性溶液构成的抛光液对硅晶片的前表面进行镜面抛光，简化了抛光工艺，从而导致生产率的提高和成本的降低，降低了密度 LPD可归因于处理并发生在镜面抛光晶片的前表面，从而提高了晶片正面的表面粗糙度。

公开(公告)号：US20120149177A1

公开(公告)日：2012-06-14

申请号：US13261183

申请日：2010-08-06

申请人： Yuichi Nakayoshi ,  Hironori Nishimura

发明人： Yuichi Nakayoshi ,  Hironori Nishimura

IPC分类号： H01L21/20

CPC分类号： H01L21/0209 ,  C30B25/02 ,  C30B29/06

摘要： An object of the invention is to provide an epitaxial silicon wafer in higher quality with good flatness and thickness uniformity. The object is achieved by a method characterized in that after an epitaxial film 20 is formed on a surface of a mirror polished silicon wafer 10, a grinding process, a polishing process, or a chemical etching process is performed only on the rear surface of the silicon wafer 10, and silicon precipitate 21 that adheres to an end portion of the rear surface of the silicon wafer 10 in the formation of the epitaxial film 20 is removed.

摘要翻译： 本发明的目的是提供一种质量更好，平坦度和厚度均匀性良好的外延硅晶片。 该目的通过一种方法实现，其特征在于，在镜面抛光的硅晶片10的表面上形成外延膜20之后，仅在其后表面上进行研磨处理，抛光处理或化学蚀刻处理 硅晶片10以及在形成外延膜20时粘附到硅晶片10的后表面的端部的硅沉淀物21被去除。

公开(公告)号：US08992791B2

公开(公告)日：2015-03-31

申请号：US12569929

申请日：2009-09-30

申请人： Kazuaki Kozasa ,  Tomonori Kawasaki ,  Takahisa Sugiman ,  Hironori Nishimura

发明人： Kazuaki Kozasa ,  Tomonori Kawasaki ,  Takahisa Sugiman ,  Hironori Nishimura

IPC分类号： H01L21/02

CPC分类号： H01L21/02046 ,  H01L21/02052 ,  H01L21/02054

摘要： A silicon wafer surface other than a defect is oxidized by ozone to form a silicon oxide film. A hydrofluoric acid is sprayed and subsequently a cleaning gas is sprayed onto the surface of the silicon wafer.

摘要翻译： 除了缺陷之外的硅晶片表面被臭氧氧化以形成氧化硅膜。 喷射氢氟酸，随后将清洁气体喷涂到硅晶片的表面上。