公开(公告)号：US20060093005A1

公开(公告)日：2006-05-04

申请号：US11212592

申请日：2005-08-29

Applicant: Yuichiro Okunuki ,  Hiromasu Matsuoka

Inventor： Yuichiro Okunuki ,  Hiromasu Matsuoka

IPC: H01S5/00

CPC classification number: H01S5/10

Abstract: A semiconductor laser has at least one laser-beam-emitting surface including a multilayer dielectric film composed of layers of different dielectric materials. The multilayer dielectric film has a wavelength dependent reflectance with a maximum or minimum in the vicinity of the oscillation wavelength of the laser. The reflectance of the laser-beam-emitting surface at the oscillation wavelength of the laser is at least 10% and not more than 25%.

Abstract translation: 半导体激光器具有至少一个激光束发射表面，其包括由不同介电材料层构成的多层电介质膜。 多层电介质膜在激光器的振荡波长附近具有最大或最小的波长相关反射率。 在激光器的振荡波长处的激光束发射表面的反射率为至少10％且不超过25％。

公开(公告)号：US07039084B2

公开(公告)日：2006-05-02

申请号：US10386553

申请日：2003-03-13

Applicant: Yuichiro Okunuki

Inventor： Yuichiro Okunuki

IPC: H01S5/00

CPC classification number: H01S5/16 ,  H01S5/168 ,  H01S2301/173 ,  H01S2301/18

Abstract: A semiconductor laser with a window structure which can emit a light beam with a non-deviated outgoing angle. The semiconductor laser emits a light beam generated at an active layer via a window section. The window section includes a first semiconductor layer having a first carrier concentration and a second semiconductor layer on the first semiconductor layer as an extension of the active layer and which has a second carrier concentration lower than the first carrier concentration. The window section further includes a third semiconductor layer having a third carrier concentration. According to the third layer, a refractive index distribution of the light beam at the window section is symmetrical in the laminating direction, with the extension of the active layer as a center. Because the beam is uniformly propagated, the beam can be emitted without being deviated in the laminating direction.

Abstract translation: 一种具有窗口结构的半导体激光器，其可以以非偏离的出射角发射光束。 半导体激光器经由窗口部分发射在有源层处产生的光束。 窗口部分包括具有第一载流子浓度的第一半导体层和在第一半导体层上的第二半导体层作为有源层的延伸，并且具有低于第一载流子浓度的第二载流子浓度。 窗口部分还包括具有第三载流子浓度的第三半导体层。 根据第三层，窗口部分处的光束的折射率分布在层叠方向上是对称的，以活性层的延伸为中心。 由于光束被均匀地传播，所以光束可以在层叠方向上不发生偏离而发射。

公开(公告)号：US07298769B2

公开(公告)日：2007-11-20

申请号：US11410057

申请日：2006-04-25

Applicant: Chikara Watatani ,  Masayoshi Takemi ,  Yuichiro Okunuki

Inventor： Chikara Watatani ,  Masayoshi Takemi ,  Yuichiro Okunuki

IPC: H01S5/00

CPC classification number: H01S5/227 ,  B82Y20/00 ,  H01S5/2223 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3434

Abstract: A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×1017 cm−3 or less are stacked on a p-type InP substrate containing Zn. On the undoped InP buffer layer, a Mg-doped p-type InP cladding layer, an InGaAsP optical confinement layer, an InGaAsP MQW active layer, an n-type InGaAsP optical confinement layer, and an n-type InP cladding layer are successively stacked. The diffusion of Zn from the p-type InP substrate into the InGaAsP MQW active layer is suppressed. Moreover, a steep doping profile can be formed in the vicinity of the active layer so that deterioration of device characteristics is suppressed.

Abstract translation: 将含有低浓度Zn的p型InP缓冲层和载流子浓度为3×10 -3 -3 -3以下的未掺杂InP缓冲层堆叠在p 型InP底物含Zn。 在未掺杂的InP缓冲层中，依次层叠Mg掺杂的p型InP包层，InGaAsP光限制层，InGaAsP MQW有源层，n型InGaAsP光限制层和n型InP包覆层 。 Zn从p型InP衬底扩散到InGaAsP MQW有源层被抑制。 此外，可以在有源层附近形成陡峭的掺杂分布，从而抑制器件特性的劣化。

公开(公告)号：US20060268952A1

公开(公告)日：2006-11-30

申请号：US11410057

申请日：2006-04-25

Applicant: Chikara Watatani ,  Masayoshi Takemi ,  Yuichiro Okunuki

Inventor： Chikara Watatani ,  Masayoshi Takemi ,  Yuichiro Okunuki

IPC: H01S5/00

CPC classification number: H01S5/227 ,  B82Y20/00 ,  H01S5/2223 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3434

Abstract: A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×1017 cm−3 or less are stacked on a p-type InP substrate containing Zn. On the undoped InP buffer layer, a Mg-doped p-type InP cladding layer, an InGaAsP optical confinement layer, an InGaAsP MQW active layer, an n-type InGaAsP optical confinement layer, and an n-type InP cladding layer are successively stacked. The diffusion of Zn from the p-type InP substrate into the InGaAsP MQW active layer is suppressed. Moreover, a steep doping profile can be formed in the vicinity of the active layer so that deterioration of device characteristics is suppressed.

Abstract translation: 将含有低浓度Zn的p型InP缓冲层和载流子浓度为3×10 -3 -3 -3以下的未掺杂InP缓冲层堆叠在p 型InP底物含Zn。 在未掺杂的InP缓冲层中，依次层叠Mg掺杂的p型InP包层，InGaAsP光限制层，InGaAsP MQW有源层，n型InGaAsP光限制层和n型InP包覆层 。 Zn从p型InP衬底扩散到InGaAsP MQW有源层被抑制。 此外，可以在有源层附近形成陡峭的掺杂分布，从而抑制器件特性的劣化。

公开(公告)号：US20100246623A1

公开(公告)日：2010-09-30

申请号：US12572323

申请日：2009-10-02

Applicant: Yuichiro Okunuki

Inventor： Yuichiro Okunuki

IPC: H01S5/20 ,  H01S5/00

CPC classification number: H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/0283 ,  H01S5/3235

Abstract: A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ: in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AlN) in contact with an facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a first layer of a-Si and a second layer of a material having a refractive index lower than that of a-Si. The first layer has a thickness ¼ of a in-medium wavelength of a-Si, and the second layer has a thickness ¼ of a in-medium wavelength of the second layer. Therefore, it is possible to firmly stack the first dielectric double layered film and form a high reflectance film with high yield.

Abstract translation: 根据本发明的半导体激光器包括与谐振器的面相接触的λ/ 2电介质膜（λ：介电膜的介质中波长，例如SiO 2，Si 3 N 4，Al 2 O 3和AlN） 以及设置在电介质膜上的第一介电双层膜，其包括第一层a-Si和第二层折射率低于a-Si的材料。 第一层具有a-Si的介质内波长的厚度¼，第二层具有第二层的介质内波长的厚度¼。 因此，可以将第一电介质双层膜牢固堆叠并以高产率形成高反射率膜。

公开(公告)号：US07359423B2

公开(公告)日：2008-04-15

申请号：US11041721

申请日：2005-01-25

Applicant: Yuichiro Okunuki

Inventor： Yuichiro Okunuki

IPC: H01S3/08

CPC classification number: H01S5/1228 ,  H01S5/124

Abstract: A semiconductor laser includes an active layer on an n-type InP substrate. A diffraction grating and a p-type InP cladding layer are above the active layer. The diffraction grating has at least one phase shift portion. Facets of the distributed feedback laser each have thereon an antireflective film having a reflectance of 3% or less. The diffraction grating does not extend into end regions of the distributed feedback laser, each end region extending 1 μm-20 μm from a respective one of the facets toward an opposite end in a waveguide direction.

Abstract translation: 半导体激光器包括n型InP衬底上的有源层。 衍射光栅和p型InP包覆层在有源层之上。 衍射光栅具有至少一个相移部分。 分布式反馈激光器的各个面都具有反射率为3％以下的抗反射膜。 衍射光栅不延伸到分布式反馈激光器的端部区域，每个端部区域从相应的一个面朝向波导方向的相对端延伸1mum-20mum。

公开(公告)号：US06912239B2

公开(公告)日：2005-06-28

申请号：US10206217

申请日：2002-07-29

Applicant: Yuichiro Okunuki

Inventor： Yuichiro Okunuki

IPC: G02F1/025 ,  H01S5/026 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S3/08

CPC classification number: H01S5/1028 ,  H01S5/12 ,  H01S5/2004

Abstract: A distributed feedback laser device inhibiting beam coupling coefficient variation resulting from fabrication dispersion and improving fabrication yield. The distributed feedback laser device includes cladding layers provided on an InP substrate and located on both sides of an active layer and a diffraction grating having grating bars, different in refractive index from the cladding layers, in either cladding layer and extending in a direction perpendicular to a light emission direction at a prescribed pitch in the emission direction, as well as at least one light distribution control layer, located in the cladding layer, spaced from the diffraction grating and having the same composition as the diffraction grating.

Abstract translation: 一种分布式反馈激光器件，其抑制由制造分散产生的光束耦合系数变化并提高制造产量。 分布式反馈激光器件包括设置在InP衬底上并且位于有源层的两侧上的覆盖层和具有与包覆层不同的折射率的格栅的衍射光栅，在任一包层中并沿垂直于 在发射方向上以规定间距的发光方向以及与衍射光栅间隔开并具有与衍射光栅相同的组成的位于包覆层中的至少一个配光控制层。

公开(公告)号：US08233514B2

公开(公告)日：2012-07-31

申请号：US13309120

申请日：2011-12-01

Applicant: Yuichiro Okunuki

Inventor： Yuichiro Okunuki

IPC: H01S5/00

CPC classification number: H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/0283 ,  H01S5/3235

Abstract: A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ:in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AlN) in contact with a facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a first layer of a-Si and a second layer of a material having a refractive index lower than that of a-Si. The first layer has a thickness ¼ of an in-medium wavelength of a-Si, and the second layer has a thickness ¼ of an in-medium wavelength of the second layer. Therefore, it is possible to firmly stack the first dielectric double layered film and form a high reflectance film with high yield.

Abstract translation: 根据本发明的半导体激光器包括与谐振器的小面接触的λ/ 2电介质膜（电介质膜的介质中波长，例如SiO 2，Si 3 N 4，Al 2 O 3和AlN） 以及设置在电介质膜上的第一介电双层膜，其包括第一层a-Si和第二层折射率低于a-Si的材料。 第一层具有a-Si的介质内波长的厚度¼，第二层具有第二层的介质内波长的厚度¼。 因此，可以将第一电介质双层膜牢固堆叠并以高产率形成高反射率膜。

公开(公告)号：US08094696B2

公开(公告)日：2012-01-10

申请号：US12572323

申请日：2009-10-02

Applicant: Yuichiro Okunuki

Inventor： Yuichiro Okunuki

IPC: H01S5/00

CPC classification number: H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/0283 ,  H01S5/3235

Abstract: A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ:in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AIN) in contact with an facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a first layer of a-Si and a second layer of a material having a refractive index lower than that of a-Si. The first layer has a thickness) ¼ of a in-medium wavelength of a-Si, and the second layer has a thickness ¼ of a in-medium wavelength of the second layer. Therefore, it is possible to firmly stack the first dielectric double layered film and form a high reflectance film with high yield.

Abstract translation: 根据本发明的半导体激光器包括与谐振器的面相接触的λ/ 2电介质膜（电介质膜的介质中波长，例如SiO 2，Si 3 N 4，Al 2 O 3和AIN） 以及设置在电介质膜上的第一介电双层膜，其包括第一层a-Si和第二层折射率低于a-Si的材料。 第一层具有a-Si的介质内波长的厚度¼，第二层具有第二层的介质内波长的厚度¼。 因此，可以将第一电介质双层膜牢固堆叠并以高产率形成高反射率膜。

公开(公告)号：US20090290611A1

公开(公告)日：2009-11-26

申请号：US12198152

申请日：2008-08-26

Applicant: Tohru Takiguchi ,  Yuichiro Okunuki ,  Go Sakaino

Inventor： Tohru Takiguchi ,  Yuichiro Okunuki ,  Go Sakaino

IPC: H01S5/00 ,  H01L21/02

CPC classification number: H01S5/227 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2275

Abstract: A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×1017 cm−3 or less near the pn junction.

Abstract translation: 半导体激光器包括：包括彼此堆叠的p型覆层，有源层和n型覆层的脊结构; 以及埋藏在山脊结构侧面的埋藏层。 掩埋层包括形成pn结的p型半导体层和n型半导体层; p型半导体层和n型半导体层中的一方在pn结附近具有5×10 17 cm -3以下的载流子浓度。