公开(公告)号：US20090080123A1

公开(公告)日：2009-03-26

申请号：US12181060

申请日：2008-07-28

申请人： Yuji Uehara ,  Koujiro Komagaki ,  Masashi Kawasaki

发明人： Yuji Uehara ,  Koujiro Komagaki ,  Masashi Kawasaki

IPC分类号： G11B5/127 ,  G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3993 ,  G11C11/161 ,  Y10T428/1121

摘要： The high quality magnetoresistance effect element is capable of reducing resistance in the perpendicular-plane direction and preventing performance deterioration of a barrier layer. The magnetoresistance effect element comprises: a free layer; a pinned magnetic layer; and a barrier layer being provided between the free layer and the pinned magnetic layer, and the barrier layer is composed of a semiconductor.

摘要翻译： 高品质磁阻效应元件能够降低垂直面方向的电阻，并防止阻挡层的性能劣化。 磁阻效应元件包括：自由层; 钉扎磁性层; 并且阻挡层设置在自由层和钉扎磁性层之间，阻挡层由半导体构成。

公开(公告)号：US08191235B2

公开(公告)日：2012-06-05

申请号：US12340236

申请日：2008-12-19

申请人： Migaku Takahashi ,  Masakiyo Tsunoda ,  Koujiro Komagaki ,  Yuji Uehara ,  Kazuyuki Sunaga

发明人： Migaku Takahashi ,  Masakiyo Tsunoda ,  Koujiro Komagaki ,  Yuji Uehara ,  Kazuyuki Sunaga

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： B32B37/06 ,  B32B2307/208 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2309/68 ,  B32B2311/00 ,  B32B2457/00 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T156/10 ,  Y10T428/12465

摘要： The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon.

摘要翻译： 本发明的方法提供一种磁阻效应元件，其能够具有对应于高密度记录的高MR比，并且适当地应用于磁阻器件，即使势垒层变薄以降低磁阻效应元件的电阻 。 制造磁阻效应元件的方法，其包括由氧化金属构成的阻挡层，与阻挡层的一个表面接触的第一磁性层和与其另一个表面接触的第二磁性层，包括以下步骤： 使用由氧化金属构成的靶，在第一磁性层上形成阻挡层; 并将第二磁性层层叠在阻挡层上。 在层叠第二磁性层之前对阻挡层进行退火。

公开(公告)号：US20090169915A1

公开(公告)日：2009-07-02

申请号：US12340236

申请日：2008-12-19

申请人： Migaku Takahashi ,  Masakiyo Tsunoda ,  Koujiro Komagaki ,  Yuji Uehara ,  Kazuyuki Sunaga

发明人： Migaku Takahashi ,  Masakiyo Tsunoda ,  Koujiro Komagaki ,  Yuji Uehara ,  Kazuyuki Sunaga

IPC分类号： B32B37/14 ,  B32B15/00

CPC分类号： B32B37/06 ,  B32B2307/208 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2309/68 ,  B32B2311/00 ,  B32B2457/00 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T156/10 ,  Y10T428/12465

摘要： The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon.

摘要翻译： 本发明的方法提供了一种磁阻效应元件，其能够具有对应于高密度记录的高MR比，并且适当地应用于磁阻器件，即使势垒层变薄以降低磁阻效应元件的电阻 。 制造磁阻效应元件的方法，其包括由氧化金属构成的阻挡层，与阻挡层的一个表面接触的第一磁性层和与其另一个表面接触的第二磁性层，包括以下步骤： 使用由氧化金属构成的靶，在第一磁性层上形成阻挡层; 并将第二磁性层层叠在阻挡层上。 在层叠第二磁性层之前对阻挡层进行退火。

公开(公告)号：US20090168270A1

公开(公告)日：2009-07-02

申请号：US12342419

申请日：2008-12-23

申请人： Migaku Takahashi ,  Masakiyo Tsunoda ,  Koujiro Komagaki ,  Yuji Uehara

发明人： Migaku Takahashi ,  Masakiyo Tsunoda ,  Koujiro Komagaki ,  Yuji Uehara

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295

摘要： In comparison with conventional exchange-coupled elements, the exchange-coupled element of the present invention has greater unidirectional magnetization anisotropy. The exchange-coupled element comprises: an ordered antiferromagnetic layer; and a pinned magnetic layer being exchange-coupled with the ordered antiferromagnetic layer, the pinned magnetic layer having unidirectional magnetization anisotropy. The pinned magnetic layer is constituted by a first pinned magnetic layer having a composition, which can have a face-centered cubic lattice structure, and a second pinned magnetic layer having a composition, which can have a body-centered cubic lattice structure.

摘要翻译： 与传统的交换耦合元件相比，本发明的交换耦合元件具有更大的单向磁化各向异性。 交换耦合元件包括：有序反铁磁层; 并且被钉扎的磁性层与有序的反铁磁层交换耦合，钉扎的磁性层具有单向磁化各向异性。 钉扎磁性层由具有面心立方晶格结构的组成的第一固定磁性层和具有体心立方晶格结构的具有组成的第二固定磁性层构成。

公开(公告)号：US20090207532A1

公开(公告)日：2009-08-20

申请号：US12371011

申请日：2009-02-13

申请人： Atsushi Furuya ,  Yuji Uehara ,  Kenji Noma

发明人： Atsushi Furuya ,  Yuji Uehara ,  Kenji Noma

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/307

摘要： A magneto resistance effect device includes a fixed magnetization portion including a ferromagnetic material, in which the magnetization direction can be fixed, and a tunnel barrier layer including high band gap metal oxide and low band gap metal oxide, and arranged on the fixed magnetization portion. The device includes a free magnetization portion including a ferromagnetic material, arranged on the tunnel barrier layer, in which the magnetization can be changed.

摘要翻译： 磁阻效应器件包括固定磁化部分，该固定磁化部分包括其中可固定磁化方向的铁磁材料和包括高带隙金属氧化物和低带隙金属氧化物的隧道势垒层，并且布置在固定磁化部分上。 该装置包括布置在隧道势垒层上的铁磁材料的自由磁化部分，其中磁化可以改变。

公开(公告)号：US20060209458A1

公开(公告)日：2006-09-21

申请号：US11158257

申请日：2005-06-21

申请人： Junichi Kane ,  Yuji Uehara ,  Kenji Noma ,  Akifumi Chikazawa

发明人： Junichi Kane ,  Yuji Uehara ,  Kenji Noma ,  Akifumi Chikazawa

IPC分类号： G11B5/147

CPC分类号： G11B5/3116 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3146 ,  H01F10/14 ,  H01F10/16 ,  H01F10/265

摘要： The soft magnetic film has superior soft magnetic characteristics and is suitable for a thin film magnetic head. The soft magnetic film of the present invention comprises: a magnetic base layer including a ferromagnetic element; and a ferromagnetic layer being piled on the magnetic base layer. The soft magnetic film has uniaxial magnetic anisotropy. The magnetic base layer includes at least one element selected from Fe, Ni and Co as the ferromagnetic element.

摘要翻译： 软磁膜具有优良的软磁特性，适用于薄膜磁头。 本发明的软磁性膜包括：包含铁磁性元件的磁性基层; 并且铁磁层堆叠在磁性基底层上。 软磁膜具有单轴磁各向异性。 磁性基层包括选自Fe，Ni和Co中的至少一种元素作为铁磁性元素。

公开(公告)号：US06970324B2

公开(公告)日：2005-11-29

申请号：US10299177

申请日：2002-11-19

申请人： Shoji Ikeda ,  Takayuki Kubomiya ,  Ikuya Tagawa ,  Yuji Uehara

发明人： Shoji Ikeda ,  Takayuki Kubomiya ,  Ikuya Tagawa ,  Yuji Uehara

IPC分类号： G11B5/31 ,  G11B5/39 ,  H01F10/16 ,  H01F10/26

CPC分类号： H01F10/26 ,  G11B5/3109 ,  G11B5/313 ,  G11B5/3967 ,  H01F10/16

摘要： A soft magnetic film includes a ferromagnetic layer. The ferromagnetic layer is laid over a non-magnetic substructure including ferromagnetic atoms. The uniaxial magnetic anisotropy may be established in the ferromagnetic layer. Since a magnetic property is not required in the substructure under the ferromagnetic layer, the soft magnetic film of this type may be utilized for purposes of wider variations.

摘要翻译： 软磁性膜包括铁磁层。 铁磁层铺设在包括铁磁原子的非磁性子结构之上。 可以在铁磁层中建立单轴磁各向异性。 由于在铁磁层下的亚结构中不需要磁性，所以这种类型的软磁膜可以用于较宽的变化。

公开(公告)号：US06605414B2

公开(公告)日：2003-08-12

申请号：US09439724

申请日：1999-11-12

申请人： Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Ei Yano ,  Takahisa Namiki ,  Hiroshi Shirataki ,  Keita Ohtsuka ,  Michiaki Kanamine ,  Yuji Uehara

发明人： Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Ei Yano ,  Takahisa Namiki ,  Hiroshi Shirataki ,  Keita Ohtsuka ,  Michiaki Kanamine ,  Yuji Uehara

IPC分类号： G03F730

CPC分类号： G11B5/3903 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/398 ,  Y10S438/911

摘要： A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.

摘要翻译： 本发明的磁电阻头的制造方法包括以下步骤：在构成磁阻器件的多层膜上形成有机膜，在有机膜上形成由抗蚀剂或无机膜形成的上层膜，使有机膜和上层 薄膜，从上部膜图案的边缘向内切割成有机膜图案的边缘，使得形成在上部膜和多层膜上的薄膜的颗粒不与有机膜图案的侧部接触。

公开(公告)号：US6052261A

公开(公告)日：2000-04-18

申请号：US669610

申请日：1996-06-24

申请人： Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Ei Yano ,  Takahisa Namiki ,  Hiroshi Shirataki ,  Keita Ohtsuka ,  Michiaki Kanamine ,  Yuji Uehara

发明人： Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Ei Yano ,  Takahisa Namiki ,  Hiroshi Shirataki ,  Keita Ohtsuka ,  Michiaki Kanamine ,  Yuji Uehara

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3903 ,  G11B5/3906 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/398 ,  Y10S438/911

摘要： A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.

公开(公告)号：US5792546A

公开(公告)日：1998-08-11

申请号：US289204

申请日：1994-08-12

申请人： Michiaki Kanamine ,  Hitoshi Kanai ,  Junichi Kane ,  Junzo Toda ,  Yuji Uehara

发明人： Michiaki Kanamine ,  Hitoshi Kanai ,  Junichi Kane ,  Junzo Toda ,  Yuji Uehara

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/66

CPC分类号： G11B5/3932 ,  G11B5/3903 ,  G11B5/3912 ,  G11B5/3967 ,  G11B5/3163 ,  Y10S428/90 ,  Y10T428/1171 ,  Y10T428/24942 ,  Y10T428/2495

摘要： A magneto-resistive head is provided with a substrate, a lower shield layer made of a Fe-system magnetic material and provided above the substrate, and a non-magnetic insulator layer provided above the lower shield layer. The non-magnetic insulator layer has a function of suppressing deterioration of surface roughness of the lower shield layer when subjected to an annealing process under a magnetic field in order to improve magnetic characteristics of the lower shield layer to desired magnetic characteristics.

摘要翻译： 磁阻头设置有基板，由Fe系磁性材料制成并设置在基板上方的下屏蔽层，以及设置在下屏蔽层上方的非磁性绝缘体层。 非磁性绝缘体层具有在磁场下进行退火处理时抑制下屏蔽层的表面粗糙度劣化的功能，以便将下屏蔽层的磁特性改善为期望的磁特性。