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    RESIN COMPOSITION FOR WIRING BOARD, RESIN SHEET FOR WIRING BOARD, COMPOSITE BODY, METHOD FOR PRODUCING COMPOSITE BODY, AND SEMICONDUCTOR DEVICE
    1.
    发明申请
    RESIN COMPOSITION FOR WIRING BOARD, RESIN SHEET FOR WIRING BOARD, COMPOSITE BODY, METHOD FOR PRODUCING COMPOSITE BODY, AND SEMICONDUCTOR DEVICE 审中-公开
    接线板用树脂组合物，导线板用树脂片，复合体，生产复合体的方法及半导体器件

    公开(公告)号：US20110308848A1

    公开(公告)日：2011-12-22

    申请号：US13148774

    申请日：2010-02-08

    申请人： Yuka Ito ,  Kenichi Kaneda ,  Yasuaki Mitsui ,  Iji Onozuka ,  Noriyuki Ohigashi ,  Hideki Hara

    发明人： Yuka Ito ,  Kenichi Kaneda ,  Yasuaki Mitsui ,  Iji Onozuka ,  Noriyuki Ohigashi ,  Hideki Hara

    IPC分类号： H05K1/18 ,  H05K3/00 ,  B32B3/00

    CPC分类号： H05K3/045 ,  H05K3/107 ,  H05K3/281 ,  H05K3/421 ,  H05K3/465 ,  H05K2201/0209 ,  H05K2201/09509 ,  H05K2201/09563 ,  Y10T29/49124 ,  Y10T428/24355

    摘要： Disclosed are a composite body, a method for producing the composite body and a semiconductor device, the composite body comprising a resin layer and a fine wiring and/or via hole being formed in the resin layer, having high adhesion and high reliability, and being capable of high frequencies. Also disclosed are a resin composition and a resin sheet, both of which can provide such a composite body.The composite body comprises a resin layer and an electroconductive layer, wherein a groove having a maximum width of 1 μm or more and 10 μm or less is on a surface of the resin layer; the electroconductive layer is inside the groove; and a surface of the resin layer being in contact with the electroconductive layer has an arithmetic average roughness (Ra) of 0.05 μm or more and 0.45 μm or less, and/or wherein the resin layer has a via hole having a diameter of 1 μm or more and 25 μm or less; the electroconductive layer is inside the via hole; and a surface of the resin layer of the inside of the via hole has an arithmetic average roughness (Ra) of 0.05 μm or more and 0.45 μm or less. The resin composition comprises an inorganic filler and a thermosetting resin, wherein the inorganic filler contains coarse particles having a diameter of more than 2 μm in an amount of 500 ppm or less. The resin sheet comprises a resin layer and a substrate, wherein the resin layer is on the substrate and comprises the resin composition.

    摘要翻译： 公开了一种复合体，该复合体的制造方法以及半导体装置，该复合体包括树脂层和在该树脂层中形成的精细布线和/或通孔，具有高粘合性和高可靠性，并且 能够高频率。 还公开了树脂组合物和树脂片，两者都可以提供这种复合体。 复合体包括树脂层和导电层，其中在树脂层的表面上具有最大宽度为1μm以上且10μm以下的槽; 导电层在槽内; 并且与导电层接触的树脂层的表面的算术平均粗糙度（Ra）为0.05μm以上且0.45μm以下，和/或其中树脂层具有直径为1μm的通孔 以上且25μm以下; 导电层在通孔内; 通孔内侧的树脂层的表面的算术平均粗糙度（Ra）为0.05μm以上且0.45μm以下。 树脂组合物包含无机填料和热固性树脂，其中无机填料含有直径大于2μm的粗颗粒的量在500ppm以下。 树脂片包括树脂层和基材，其中树脂层在基材上并包含树脂组合物。

    Circuit board, semiconductor device, process for manufacturing circuit board and process for manufacturing semiconductor device
    2.
    发明授权
    Circuit board, semiconductor device, process for manufacturing circuit board and process for manufacturing semiconductor device 失效
    电路板，半导体器件，制造电路板的工艺和制造半导体器件的工艺

    公开(公告)号：US08742568B2

    公开(公告)日：2014-06-03

    申请号：US13637296

    申请日：2011-02-24

    申请人： Masayoshi Kondo ,  Natsuki Makino ,  Daisuke Fujiwara ,  Yuka Ito

    发明人： Masayoshi Kondo ,  Natsuki Makino ,  Daisuke Fujiwara ,  Yuka Ito

    IPC分类号： H01L23/14 ,  H01L21/44

    CPC分类号： H01L23/49816 ,  H01L23/49811 ,  H01L23/49827 ,  H01L2924/0002 ,  H05K3/285 ,  H05K2201/068 ,  H05K2201/09136 ,  H01L2924/00

    摘要： A circuit board (1) exhibits an average coefficient of thermal expansion (A) of the first insulating layer (21) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm/degrees C. and equal to or lower than 30 ppm/degrees C. Further, an average coefficient of thermal expansion (B) of the second insulating layer (23) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point is equivalent to an average coefficient of thermal expansion (C) of the third insulating layer (25) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point. (B) and (C) are larger than (A), and a difference between (A) and (B) and a difference between (A) and (C) are equal to or higher than 5 ppm/degrees C. and equal to or lower than 35 ppm/degrees C.

    摘要翻译： 电路板（1）在25℃至其玻璃化转变点的温度范围内，沿着基板表面的方向显示第一绝缘层（21）的平均热膨胀系数（A） 在3ppm /℃以上且30ppm /℃以下的温度范围内。另外，第二绝缘层（23）的沿着基板表面的方向的平均热膨胀系数（B）在 25℃至其玻璃化转变点相当于在25℃至其玻璃化转变点的温度范围内沿着衬底表面的方向上的第三绝缘层（25）的平均热膨胀系数（C） 。 （B）和（C）大于（A），（A）和（B）之间的差异以及（A）和（C）之间的差异等于或高于5ppm /℃。 至35ppm /℃以下

    Profile measuring apparatus
    3.
    发明申请
    Profile measuring apparatus 有权
    型材测量仪器

    公开(公告)号：US20110270562A1

    公开(公告)日：2011-11-03

    申请号：US13064922

    申请日：2011-04-26

    申请人： Yuka Ito ,  Haruhiko Fujisawa

    发明人： Yuka Ito ,  Haruhiko Fujisawa

    IPC分类号： G06F19/00

    CPC分类号： G01B11/25 ,  G01B9/02055 ,  G01B11/2518 ,  G01B21/20

    摘要： According to one embodiment, a profile measuring apparatus comprises a profile measuring unit, a position acquiring unit, a profile calculating unit, a deflection detecting unit, and a controlling unit. The profile measuring unit has a projecting unit to project a pattern onto a measured object, and an imaging unit to image the pattern. The position acquiring unit acquires a position of the pattern on the measured object. The profile calculating unit calculates a profile of the measured object, based on image information from the imaging unit and position information from the position acquiring unit. The deflection detecting unit detects deflection of the projecting unit. The controlling unit executes active correction for the profile measuring unit and/or passive correction for the profile calculating unit, based on the deflection of the projecting unit detected by the deflection detecting unit.

    摘要翻译： 根据一个实施例，轮廓测量装置包括轮廓测量单元，位置获取单元，轮廓计算单元，偏转检测单元和控制单元。 型材测量单元具有将图案投影到测量对象上的投影单元和用于对图案进行成像的成像单元。 位置获取单元获取所测量对象上的图案的位置。 轮廓计算单元基于来自成像单元的图像信息和来自位置获取单元的位置信息来计算测量对象的轮廓。 偏转检测单元检测投影单元的偏转。 基于由偏转检测单元检测到的投影单元的偏转，控制单元对轮廓测量单元执行主动校正和/或轮廓计算单元的无源校正。

    CIRCUIT BOARD, SEMICONDUCTOR DEVICE, PROCESS FOR MANUFACTURING CIRCUIT BOARD AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE
    5.
    发明申请
    CIRCUIT BOARD, SEMICONDUCTOR DEVICE, PROCESS FOR MANUFACTURING CIRCUIT BOARD AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
    电路板，半导体器件，制造电路板的工艺和制造半导体器件的工艺

    公开(公告)号：US20130015582A1

    公开(公告)日：2013-01-17

    申请号：US13637296

    申请日：2011-02-24

    申请人： Masayoshi Kondo ,  Natsuki Makino ,  Daisuke Fujiwara ,  Yuka Ito

    发明人： Masayoshi Kondo ,  Natsuki Makino ,  Daisuke Fujiwara ,  Yuka Ito

    IPC分类号： H01L23/48 ,  H01L21/78

    CPC分类号： H01L23/49816 ,  H01L23/49811 ,  H01L23/49827 ,  H01L2924/0002 ,  H05K3/285 ,  H05K2201/068 ,  H05K2201/09136 ,  H01L2924/00

    摘要： A circuit board (1) exhibits an average coefficient of thermal expansion (A) of the first insulating layer (21) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm/degrees C. and equal to or lower than 30 ppm/degrees C. Further, an average coefficient of thermal expansion (B) of the second insulating layer (23) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point is equivalent to an average coefficient of thermal expansion (C) of the third insulating layer (25) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point. (B) and (C) are larger than (A), and a difference between (A) and (B) and a difference between (A) and (C) are equal to or higher than 5 ppm/degrees C. and equal to or lower than 35 ppm/degrees C.

    摘要翻译： 电路板（1）在25℃至其玻璃化转变点的温度范围内，沿着基板表面的方向显示第一绝缘层（21）的平均热膨胀系数（A） 在3ppm /℃以上且30ppm /℃以下的温度范围内。另外，第二绝缘层（23）的沿着基板表面的方向的平均热膨胀系数（B）在 25℃至其玻璃化转变点相当于在25℃至其玻璃化转变点的温度范围内沿着衬底表面的方向上的第三绝缘层（25）的平均热膨胀系数（C） 。 （B）和（C）大于（A），（A）和（B）之间的差异以及（A）和（C）之间的差异等于或高于5ppm /℃。 至35ppm /℃以下

    RECORDING MEDIUM AND IMAGE FORMING APPARATUS
    7.
    发明申请
    RECORDING MEDIUM AND IMAGE FORMING APPARATUS 有权
    记录介质和图像形成装置

    公开(公告)号：US20110059270A1

    公开(公告)日：2011-03-10

    申请号：US12699445

    申请日：2010-02-03

    申请人： Yuka Ito ,  Takashi Matsubara ,  Shinji Hasegawa ,  Suguru Nakaso ,  Makoto Furuki ,  Minquan Tian

    发明人： Yuka Ito ,  Takashi Matsubara ,  Shinji Hasegawa ,  Suguru Nakaso ,  Makoto Furuki ,  Minquan Tian

    IPC分类号： B44F1/10 ,  B32B3/10 ,  G03G15/06

    CPC分类号： G03G15/06 ,  Y10T428/24802

    摘要： The present invention provides a recording medium containing a first image formed with a first recording material; and a second image comprising a first region formed with a second recording material having approximately the same light fastness as that of the first recording material, and a second region formed with a third recording material having higher light fastness than that of the first recording material, a color of the second region being a color corresponding to any stage of a process of discoloration of the first region.

    摘要翻译： 本发明提供一种记录介质，其含有形成有第一记录材料的第一图像; 以及第二图像，包括形成有具有与第一记录材料大致相同的耐光性的第二记录材料的第一区域，以及形成有比第一记录材料具有更高耐光性的第三记录材料的第二区域， 第二区域的颜色是对应于第一区域的变色过程的任何阶段的颜色。

    Profile measuring apparatus
    9.
    发明授权
    Profile measuring apparatus 有权
    型材测量仪器

    公开(公告)号：US09335160B2

    公开(公告)日：2016-05-10

    申请号：US13064922

    申请日：2011-04-26

    申请人： Yuka Ito ,  Haruhiko Fujisawa

    发明人： Yuka Ito ,  Haruhiko Fujisawa

    IPC分类号： G01B11/25 ,  G01B9/02 ,  G01B21/20

    CPC分类号： G01B11/25 ,  G01B9/02055 ,  G01B11/2518 ,  G01B21/20

    摘要： According to one embodiment, a profile measuring apparatus comprises a profile measuring unit, a position acquiring unit, a profile calculating unit, a deflection detecting unit, and a controlling unit. The profile measuring unit has a projecting unit to project a pattern onto a measured object, and an imaging unit to image the pattern. The position acquiring unit acquires a position of the profile measuring unit. The profile calculating unit calculates a profile of the measured object, based on image information from the imaging unit and position information from the position acquiring unit. The deflection detecting unit detects deflection of the projecting unit. The controlling unit executes active correction for the profile measuring unit and/or passive correction for the profile calculating unit, based on the deflection of the projecting unit detected by the deflection detecting unit.

    摘要翻译： 根据一个实施例，轮廓测量装置包括轮廓测量单元，位置获取单元，轮廓计算单元，偏转检测单元和控制单元。 型材测量单元具有将图案投影到测量对象上的投影单元和用于对图案进行成像的成像单元。 位置获取单元获取轮廓测量单元的位置。 轮廓计算单元基于来自成像单元的图像信息和来自位置获取单元的位置信息来计算测量对象的轮廓。 偏转检测单元检测投影单元的偏转。 基于由偏转检测单元检测到的投影单元的偏转，控制单元对轮廓测量单元执行主动校正和/或轮廓计算单元的无源校正。