公开(公告)号：US20110071012A1

公开(公告)日：2011-03-24

申请号：US12858768

申请日：2010-08-18

申请人： Yuki Kondo ,  Hiroyuki Ohkawa ,  Makoto Sano ,  Kazutaka Hayashi ,  Shusaku Akiba

发明人： Yuki Kondo ,  Hiroyuki Ohkawa ,  Makoto Sano ,  Kazutaka Hayashi ,  Shusaku Akiba

IPC分类号： C03C3/087 ,  C03C3/085

CPC分类号： C03C21/002 ,  C03C3/085 ,  C03C3/087 ,  C03C4/02 ,  Y10T428/315

摘要： Glass comprising, as represented by mole percentage based on the following oxides, from 50 to 75% of SiO2, from 1 to 15% of Al2O3, from 6 to 21% of Na2O, from 0 to 15% of K2O, from 0 to 15% of MgO, from 0 to 20% of CaO, from 0 to 21% of ΣRO (wherein R is Mg, Ca, Sr, Ba and/or Zn), from 0 to 5% of ZrO2, from 1.5 to 6% of Fe2O3, and from 0.1 to 1% of Co3O4.

摘要翻译： 玻璃包含以下列氧化物为基准的摩尔百分比：50至75％的SiO 2，1至15％的Al 2 O 3，6至21％的Na 2 O，0至15％的K 2 O，0至15 0〜20％的CaO，0〜21％的RO（其中R是Mg，Ca，Sr，Ba和/或Zn），0〜5％的ZrO 2，1.5〜6 的Fe 2 O 3，以及0.1〜1％的Co 3 O 4。

公开(公告)号：US08349455B2

公开(公告)日：2013-01-08

申请号：US12858768

申请日：2010-08-18

申请人： Yuki Kondo ,  Hiroyuki Ohkawa ,  Makoto Sano ,  Kazutaka Hayashi ,  Shusaku Akiba

发明人： Yuki Kondo ,  Hiroyuki Ohkawa ,  Makoto Sano ,  Kazutaka Hayashi ,  Shusaku Akiba

IPC分类号： B32B17/00 ,  C03C21/00 ,  C03C3/085 ,  C03C3/087

CPC分类号： C03C21/002 ,  C03C3/085 ,  C03C3/087 ,  C03C4/02 ,  Y10T428/315

摘要： Glass comprising, as represented by mole percentage based on the following oxides, from 50 to 75% of SiO2, from 1 to 15% of Al2O3, from 6 to 21% of Na2O, from 0 to 15% of K2O, from 0 to 15% of MgO, from 0 to 20% of CaO, from 0 to 21% of ΣRO (wherein R is Mg, Ca, Sr, Ba and/or Zn), from 0 to 5% of ZrO2, from 1.5 to 6% of Fe2O3, and from 0.1 to 1% of Co3O4.

摘要翻译： 玻璃包含以下列氧化物为基准的摩尔百分比：50至75％的SiO 2，1至15％的Al 2 O 3，6至21％的Na 2 O，0至15％的K 2 O，0至15 0〜20％的CaO，0〜21％的RO（其中R是Mg，Ca，Sr，Ba和/或Zn），0〜5％的ZrO 2，1.5〜6 的Fe 2 O 3，以及0.1〜1％的Co 3 O 4。

公开(公告)号：US4786553A

公开(公告)日：1988-11-22

申请号：US30600

申请日：1987-03-27

申请人： Yoshihiro Shiroishi ,  Sadao Hishiyama ,  Hiroyuki Suzuki ,  Norikazu Tsumita ,  Tsuneo Suganuma ,  Yoshio Gobara ,  Masaaki Hayashi ,  Makoto Sano ,  Takaaki Shirakura

发明人： Yoshihiro Shiroishi ,  Sadao Hishiyama ,  Hiroyuki Suzuki ,  Norikazu Tsumita ,  Tsuneo Suganuma ,  Yoshio Gobara ,  Masaaki Hayashi ,  Makoto Sano ,  Takaaki Shirakura

IPC分类号： G11B5/64 ,  H01F10/10 ,  H01F10/26

CPC分类号： G11B5/64 ,  Y10S428/90 ,  Y10T428/1266 ,  Y10T428/12854 ,  Y10T428/12944 ,  Y10T428/265

摘要： A magnetic recording medium comprises a non-magnetic substrate and a thin magnetic film, the thin magnetic film being composed mainly of Co, Ni and at least one of Zr and Hf, and a concentration of Zr, Hf or Zr and Hf as contained in the thin magnetic film being 0.1 to 30% by atom on the basis of the total of Co and Ni, and has a considerably higher corrosion resistance than that of the conventional magnetic recording medium having a thin Co-Ni magnetic film.

摘要翻译： 磁记录介质包括非磁性基片和薄磁膜，该薄磁膜主要由Co，Ni和Zr和Hf中的至少一种组成，Zr，Hf或Zr和Hf的浓度包含在 基于Co和Ni的总和，薄磁膜为0.1至30原子％，并且具有比具有薄Co-Ni磁性膜的常规磁记录介质更高的耐腐蚀性。

公开(公告)号：US06815697B2

公开(公告)日：2004-11-09

申请号：US10397536

申请日：2003-03-27

申请人： Makoto Sano ,  Michiro Sugitani

发明人： Makoto Sano ,  Michiro Sugitani

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  H01J2237/0044

摘要： In an ion beam line having a mechanism for scanning an ion beam by an electric field or a magnetic field or in an ion beam line having a mechanism for forming a sheet-like or a ribbon-like ion beam, electrons are confined by the use of cusp magnetic fields generated by arranging permanent magnets. In a direction intersecting a beam traveling direction and a beam scanning direction or in a direction intersecting the beam traveling direction and a beam spread direction of the sheet-like or the ribbon-like beam, the electrons are supplied to neutralize electric charges.

公开(公告)号：US06250084B1

公开(公告)日：2001-06-26

申请号：US09429348

申请日：1999-10-28

申请人： Hiroshi Sato ,  Hisataka Asami ,  Makoto Sano ,  Choiku Yoshikawa

发明人： Hiroshi Sato ,  Hisataka Asami ,  Makoto Sano ,  Choiku Yoshikawa

IPC分类号： F25B2102

CPC分类号： F25B21/04 ,  B67D1/00

摘要： A soda drink selling machine having a compact purified-water generating unit can be installed at places where purified water suiting for producing soda drinks is not available, comprises a purified-water generating unit, a carbonated water generating unit, a soda drink producing-dispensing unit, and a control system controlling each device in the soda drink selling machine so as to be operated in order or simultaneously at need, wherein the purified-water generating unit comprises a control system for controlling operations in ice maker including a heat transfer surface on heat absorbing side or releasing side of a coolant compression-evaporation type or an electronic heat pump, and in constant temperature purified-water tank, and operations of ice-crystal formation and melting processes in the ice maker.

摘要翻译： 具有小型净化水生成单元的苏打饮料出售机可以安装在不能用于生产苏打饮料的净化水的地方，包括纯化水产生单元，碳酸水生成单元，苏打饮料生产分配 单元和控制系统，其控制所述苏打饮料出售机器中的每个装置，以便在需要时顺序或同时操作，其中所述净水产生单元包括用于控制制冰机中的操作的控制系统，所述制冰机包括传热表面 冷却剂压缩蒸发型或电子热泵的吸热侧或释放侧，以及恒温净化水箱，以及制冰机中的冰晶形成和熔融工序。

公开(公告)号：US4842917A

公开(公告)日：1989-06-27

申请号：US88380

申请日：1987-08-24

申请人： Tomoyuki Ohno ,  Yoshihiro Shiroishi ,  Sadao Hishiyama ,  Hiroyuki Suzuki ,  Takaaki Shirakura ,  Shinya Matsuoka ,  Makoto Sano ,  Takao Nakamura ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Kenzo Susa

发明人： Tomoyuki Ohno ,  Yoshihiro Shiroishi ,  Sadao Hishiyama ,  Hiroyuki Suzuki ,  Takaaki Shirakura ,  Shinya Matsuoka ,  Makoto Sano ,  Takao Nakamura ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Kenzo Susa

IPC分类号： G11B5/73

CPC分类号： G11B5/7325 ,  Y10S428/90 ,  Y10T428/24355

摘要： A magnetic recording medium having a magnetic film formed on a substrate directly or through an underlayer from an alloy containing Co as a principal component. The central line average surface roughness Ra and maximum surface roughness Rmax of the magnetic film in a direction perpendicular to the direction of magnetic recording are selected so as to fall within the ranges of 1 nm.ltoreq.Ra.ltoreq.20 nm and Rmax.ltoreq.25 Ra, respectively, and the in-plane magnetic anisotropy energy Ku of the magnetic film is selected to fall within the range of 0.ltoreq.Ku.ltoreq.8.times.10.sup.5 erg/cm.sup.3. Thus, it is possible to minimize the value of modulation which represents the degree of variation of read output on the same circumference of a magnetic disk. It is also possible to reduce the noise generated in read and write operations by forming the magnetic film so as have no crystallographic orientation.

摘要翻译： 一种磁记录介质，其具有直接或通过底层从基板上形成的含有Co作为主要成分的合金的磁性膜。 选择磁性膜在垂直于磁记录方向的方向上的中心线平均表面粗糙度Ra和最大表面粗糙度Rmax，使其落入1nm≤Ra<20nm的范围内，并且Rmax < / = 25Ra，磁性膜的面内磁各向异性能Ku被选择在0≤K≤5×10 5Ω/ cm 3的范围内。 因此，可以将表示在磁盘的同一圆周上的读取输出的变化程度的调制值最小化。 也可以通过形成磁性膜来减少读取和写入操作中产生的噪声，从而没有结晶取向。

公开(公告)号：US20080130039A1

公开(公告)日：2008-06-05

申请号：US11882405

申请日：2007-08-01

申请人： Tatsuya Igarashi ,  Makoto Sano ,  Ryuzo Sekiguchi

发明人： Tatsuya Igarashi ,  Makoto Sano ,  Ryuzo Sekiguchi

IPC分类号： G06F3/12

CPC分类号： G06F3/1208 ,  G06F3/1242

摘要： An image processing system includes: a receiving section that receives print information including at least a first printing control command embedded in a print document and a second printing control command relating to a setting condition for the first printing control command; a control command extracting section that extracts the first printing control command and the second printing control command from the print information; and a print executing section that performs the first printing control command according to the setting condition of the second printing control command.

摘要翻译： 图像处理系统包括：接收部分，其接收包括至少嵌入在打印文档中的第一打印控制命令的打印信息和与第一打印控制命令的设置条件有关的第二打印控制命令; 控制命令提取部分，从打印信息中提取第一打印控制命令和第二打印控制命令; 以及打印执行部，其根据第二打印控制命令的设定条件执行第一打印控制命令。

公开(公告)号：US06984833B2

公开(公告)日：2006-01-10

申请号：US10864343

申请日：2004-06-10

申请人： Makoto Sano ,  Michiro Sugitani ,  Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

发明人： Makoto Sano ,  Michiro Sugitani ,  Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

IPC分类号： H01J37/304 ,  H01J37/317

CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/31703

摘要： The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.

摘要翻译： 本发明适用于设置有真空压力补偿机构的离子注入机。 压力补偿机构对初步注入中的晶片附近的测量束电流和真空压力进行采样，并将功能参数存储在存储器单元中，该功能参数通过计算测量的光束电流和真空压力之间的关系来计算预定功能的参数而获得 。 在实际植入中，压力补偿机构使用作为真空压力的函数存储的功能参数来校正测量的束电流，并且基于校正的束电流，执行剂量控制。 在本发明中，基于从质量分析狭缝下游的区域中的晶片附近的压力的估计来补偿实际的光束损失。

公开(公告)号：US07304319B2

公开(公告)日：2007-12-04

申请号：US11151308

申请日：2005-06-14

申请人： Hiroshi Kawaguchi ,  Makoto Sano ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Takashi Kuroda ,  Kazunari Ueda ,  Hiroshi Sogabe

发明人： Hiroshi Kawaguchi ,  Makoto Sano ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Takashi Kuroda ,  Kazunari Ueda ,  Hiroshi Sogabe

IPC分类号： H01J37/317

CPC分类号： H01J49/26 ,  H01J37/026 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0041

摘要： A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.

摘要翻译： 根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时，用于抑制晶片的充电。 电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。 第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。 所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。 在第二电弧室中产生第二等离子体，并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。

公开(公告)号：US20060113492A1

公开(公告)日：2006-06-01

申请号：US11151308

申请日：2005-06-14

申请人： Hiroshi Kawaguchi ,  Makoto Sano ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Takashi Kuroda ,  Kazunari Ueda ,  Hiroshi Sogabe

发明人： Hiroshi Kawaguchi ,  Makoto Sano ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Takashi Kuroda ,  Kazunari Ueda ,  Hiroshi Sogabe

IPC分类号： H01J37/08

CPC分类号： H01J49/26 ,  H01J37/026 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0041

摘要： A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.

摘要翻译： 根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时，用于抑制晶片的充电。 电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。 第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。 所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。 在第二电弧室中产生第二等离子体，并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。