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公开(公告)号：US06461407B2
公开(公告)日：2002-10-08
申请号：US09725566
申请日：2000-11-30
IPC分类号： B01D1900
CPC分类号： B01D19/0031 , B01D19/0005
摘要： Disclosed are a method for supplying a liquid raw material wherein the liquid raw material is deaerated and supplied from a liquid raw material container to a liquid flow control section, the method comprising passing the liquid raw material, supplied from a liquid raw material container by the pressure of a first inert gas, inside of a gas permeable synthetic resin tube, passing a second inert gas having a lower permeability into the synthetic resin tube than the first inert gas along the external surface of the synthetic resin tube whereby the first inert gas dissolved in the liquid raw material is allowed to penetrate into the outside of the synthetic resin tube and then supplying the liquid raw material to the liquid flow control section and an apparatus for supplying a liquid raw material which apparatus is used in the method. The invention ensures that inert gas dissolved in a liquid raw material can be removed easily and efficiently in a semiconductor manufacturing process using a liquid raw material.
摘要翻译： 公开了一种液体原料的供给方法，其中液体原料从液体原料容器脱气并供给到液体流量控制部分，该方法包括使从液体原料容器供给的液体原料通过 第一惰性气体的压力，在透气性合成树脂管的内部，沿着合成树脂管的外表面使具有比第一惰性气体低的渗透性的第二惰性气体与合成树脂管相比，使第一惰性气体溶解 允许液体原料渗透到合成树脂管的外部，然后将液体原料供应到液体流动控制部分和用于该方法中使用该装置的液体原料的装置。 本发明确保了在使用液体原料的半导体制造过程中能够容易且有效地除去溶解在液体原料中的惰性气体。
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公开(公告)号：US6106898A
公开(公告)日：2000-08-22
申请号：US159092
申请日：1998-09-23
IPC分类号： C23C16/34
CPC分类号： C23C16/34
摘要： A process for preparing a nitride film by a chemical vapor deposition method, which entails reacting a material gas including tert-butyl hydrazene as the main component as the main component of a nitrogen source with a material gas of an organometallic compound, a metal halide or a metal hydride to deposit the nitride film on a substrate.
摘要翻译： 一种通过化学气相沉积法制备氮化物膜的方法，其使包含以叔丁基肼为主要成分的原料气体作为氮源的主要成分与有机金属化合物的材料气体，金属卤化物或 金属氢化物以将氮化物膜沉积在基底上。
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公开(公告)号：US6100415A
公开(公告)日：2000-08-08
申请号：US267791
申请日：1999-03-15
摘要： A purified alkoxide from which volatile impurities causing polymerization and degradation of the alkoxide are removed to extremely low concentrations. The purified alkoxide can be obtained by distilling a crude alkoxide and stripping the distilled liquid alkoxide by applying ultrasonic vibration while passing an inert gas through the liquid alkoxide. A high quality thin insulating film excellent in flatness with few defects such as voids can be obtained by using the purified alkoxide of the present invention as a CVD material.
摘要翻译： 纯化的醇盐，其中引起聚合的挥发性杂质和醇盐的降解被除去至极低的浓度。 纯化的醇盐可以通过蒸馏粗的醇盐并通过在惰性气体通过液体醇盐的同时施加超声振动来汽提蒸馏的液体醇盐来获得。 通过使用本发明的纯化醇盐作为CVD材料，可以获得平坦度优异，空隙少的缺陷的优质薄绝缘膜。
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公开(公告)号：US6155540A
公开(公告)日：2000-12-05
申请号：US158781
申请日：1998-09-23
IPC分类号： B05B17/06 , B01D1/16 , B01D3/34 , B01J4/00 , C23C16/44 , C23C16/448 , H01L21/205 , H01L21/285 , B01F3/04
CPC分类号： B01J4/008 , B01D1/16 , B01D3/346 , C23C16/4481 , C23C16/4486 , Y10S261/65
摘要： An apparatus for vaporizing a liquid material and supplying the material in a gas phase, in which a liquid material for CVD is introduced into a vaporizer at a controlled flow rate, atomized by an ultrasonic atomizing device disposed at the inside or the outside of the vaporizer, heated by a circular flow of a carrier gas and vaporized. When a liquid material for CVD is supplied to a CVD apparatus in the production of semiconductors, the concentration of the material is controlled easily in the vaporization, the concentration of the material in the gas can be changed quickly in response with the change in the flow rate of the material, decomposition of the material does not occur and the operating condition of a CVD apparatus is not restricted.
摘要翻译： 一种用于蒸发液体材料并将气体供给材料的装置，其中将用于CVD的液体材料以受控的流量引入蒸发器，由设置在蒸发器内部或外部的超声波雾化装置雾化 ，通过载气的圆形流加热并蒸发。 当用于CVD的液体材料在半导体的生产中被供应到CVD装置时，在蒸发中容易控制材料的浓度，气体中的材料的浓度可以响应于流动的变化而迅速地改变 材料的速率不会发生材料的分解，并且CVD装置的操作条件不受限制。
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公开(公告)号：US20090269938A1
公开(公告)日：2009-10-29
申请号：US12497428
申请日：2009-07-02
申请人： Tatsuya OHORI , Kazushige Shiina , Yasushi Iyechika , Noboru Suda , Yukichi Takamatsu , Yoshiyasu Ishihama , Takeo Yoneyama , Yoshinao Komiya
发明人： Tatsuya OHORI , Kazushige Shiina , Yasushi Iyechika , Noboru Suda , Yukichi Takamatsu , Yoshiyasu Ishihama , Takeo Yoneyama , Yoshinao Komiya
IPC分类号： H01L21/46
CPC分类号： C23C16/4581 , C23C16/481
摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.
摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。
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公开(公告)号：US08277893B2
公开(公告)日：2012-10-02
申请号：US12497428
申请日：2009-07-02
申请人： Tatsuya Ohori , Kazushige Shiina , Yasushi Iyechika , Noboru Suda , Yukichi Takamatsu , Yoshiyasu Ishihama , Takeo Yoneyama , Yoshinao Komiya
发明人： Tatsuya Ohori , Kazushige Shiina , Yasushi Iyechika , Noboru Suda , Yukichi Takamatsu , Yoshiyasu Ishihama , Takeo Yoneyama , Yoshinao Komiya
IPC分类号： C23C16/06
CPC分类号： C23C16/4581 , C23C16/481
摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.
摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。
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公开(公告)号：US20070051316A1
公开(公告)日：2007-03-08
申请号：US11514927
申请日：2006-09-05
申请人： Tatsuya Ohori , Kazushige Shiina , Yasushi Iyechika , Noboru Suda , Yukichi Takamatsu , Yoshiyasu Ishihama , Takeo Yoneyama , Yoshinao Komiya
发明人： Tatsuya Ohori , Kazushige Shiina , Yasushi Iyechika , Noboru Suda , Yukichi Takamatsu , Yoshiyasu Ishihama , Takeo Yoneyama , Yoshinao Komiya
IPC分类号： C23C16/00
CPC分类号： C23C16/4581 , C23C16/481
摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.
摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。
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公开(公告)号：US06473563B2
公开(公告)日：2002-10-29
申请号：US09986901
申请日：2001-11-13
申请人： Yukichi Takamatsu , Takeo Yoneyama , Koji Kiriyama , Akira Asano , Kazuaki Tonari , Mitsuhiro Iwata
发明人： Yukichi Takamatsu , Takeo Yoneyama , Koji Kiriyama , Akira Asano , Kazuaki Tonari , Mitsuhiro Iwata
IPC分类号： C23C1400
CPC分类号： C23C16/4411 , C23C16/4404 , C23C16/4481
摘要： There are disclosed a vaporizer wherein at least a portion of a CVD material feed portion in contact with a CVD material is constituted of a corrosion resistant synthetic resin; and an apparatus for vaporizing and supplying which comprises a cooler and the vaporizer wherein the inside of the CVD material feed portion of the vaporizer and the surface on the side of the vaporization chamber of the CVD material feed portion are constituted of a corrosion resistant synthetic resin; the feed portion in contact with the outside of the vaporizer is constituted of a metal; and the CVD material feed portion which is constituted of a metal and which undergoes heat transfer from the heating means upon heating the vaporization chamber can be cooled with a cooler. The vaporizer and apparatus, when used for supplying a gaseous CVD-material to CVD equipment for producing semiconductors, enables the CVD material to be efficiently vaporized and supplied at desirable concentration and flow rate without causing deposit or adhesion of the CVD material at a CVD material feed port even if a solid CVD-material is used.
摘要翻译： 公开了一种蒸发器，其中与CVD材料接触的CVD材料供给部分的至少一部分由耐腐蚀合成树脂构成; 以及包括冷却器和蒸发器的蒸发和供给装置，其中蒸发器的CVD材料供给部分的内部和CVD材料进料部分的蒸发室侧的表面由耐蚀合成树脂 ; 与蒸发器的外部接触的进料部分由金属构成; 并且由冷却器冷却由金属构成并且在加热蒸发室时从加热装置传热的CVD材料进料部分。 蒸发器和设备当用于向用于制造半导体的CVD设备供应气态CVD材料时，使得能够以期望的浓度和流速有效地蒸发和供应CVD材料，而不会在CVD材料上沉积或粘附CVD材料 即使使用固体CVD材料。
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9.发明授权Material for forming insulation film and film-forming method with the use of the material 失效用于形成绝缘膜的材料和使用该材料的成膜方法公开(公告)号：US07195795B2
公开(公告)日：2007-03-27
申请号：US10969185
申请日：2004-10-21
申请人： Yukichi Takamatsu , Takeo Yoneyama , Kazuaki Tonari , Nobumasa Soejima , Koji Kiriyama , Takafumi Ishii
发明人： Yukichi Takamatsu , Takeo Yoneyama , Kazuaki Tonari , Nobumasa Soejima , Koji Kiriyama , Takafumi Ishii
IPC分类号： C23C16/40
CPC分类号： C23C16/401 , C09D4/00 , C23C18/1204 , C08G77/00
摘要： A material for forming an insulation film comprising an alkoxide compound of lithium and at least one kind of organic solvent selected from ether, ketone, ester, alcohol, and hydrocarbon. A material for forming an insulation film comprising a carboxylate of lithium, an organic solvent, and tetramethoxysilane or tetraethoxysilane. A film-forming method for forming an insulation film with the use of the material for forming an insulation film. An insulation film-forming over the various substrates by spin coating method, mist deposition method or CVD method with the use of these material becomes possible and enables to expect providing an insulation film of high quality and high purity containing lithium or lithium silicate.
摘要翻译： 一种用于形成绝缘膜的材料，其包含锂的醇盐化合物和选自醚，酮，酯，醇和烃的至少一种有机溶剂。 一种用于形成包含锂，有机溶剂和四甲氧基硅烷或四乙氧基硅烷的羧酸盐的绝缘膜的材料。 一种用于使用用于形成绝缘膜的材料形成绝缘膜的成膜方法。 通过使用这些材料，通过旋涂法，雾滴法或CVD法在各种基板上形成绝缘膜成为可能，并且能够期望提供含有锂或硅酸锂的高质量和高纯度的绝缘膜。
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10.发明申请Material for forming insulation film and film-forming method with the use of the material 失效用于形成绝缘膜的材料和使用该材料的成膜方法公开(公告)号：US20050095361A1
公开(公告)日：2005-05-05
申请号：US10969185
申请日：2004-10-21
申请人： Yukichi Takamatsu , Takeo Yoneyama , Kazuaki Tonari , Nobumasa Soejima , Koji Kiriyama , Takafumi Ishii
发明人： Yukichi Takamatsu , Takeo Yoneyama , Kazuaki Tonari , Nobumasa Soejima , Koji Kiriyama , Takafumi Ishii
IPC分类号： H01B3/02 , B05D1/00 , C09D4/00 , C09D5/25 , C09D101/00 , C09D201/00 , C23C16/40 , C23C18/12 , H01B3/18 , H01B3/46
CPC分类号： C23C16/401 , C09D4/00 , C23C18/1204 , C08G77/00
摘要： A material for forming an insulation film comprising an alkoxide compound of lithium and at least one kind of organic solvent selected from ether, ketone, ester, alcohol, and hydrocarbon. A material for forming an insulation film comprising a carboxylate of lithium, an organic solvent, and tetramethoxysilane or tetraethoxysilane. A film-forming method for forming an insulation film with the use of the material for forming an insulation film. An insulation film-forming over the various substrates by spin coating method, mist deposition method or CVD method with the use of these material becomes possible and enables to expect providing an insulation film of high quality and high purity containing lithium or lithium silicate.
摘要翻译： 一种用于形成绝缘膜的材料，其包含锂的醇盐化合物和选自醚，酮，酯，醇和烃的至少一种有机溶剂。 一种用于形成包含锂，有机溶剂和四甲氧基硅烷或四乙氧基硅烷的羧酸盐的绝缘膜的材料。 一种用于使用用于形成绝缘膜的材料形成绝缘膜的成膜方法。 通过使用这些材料，通过旋涂法，雾滴法或CVD法在各种基板上形成绝缘膜成为可能，并且能够期望提供含有锂或硅酸锂的高质量和高纯度的绝缘膜。
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