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    Semiconductor integrated circuit
    2.
    发明授权
    Semiconductor integrated circuit 有权
    半导体集成电路

    公开(公告)号：US08000923B2

    公开(公告)日：2011-08-16

    申请号：US12043584

    申请日：2008-03-06

    申请人： Takashi Inukai ,  Yukihiro Urakawa

    发明人： Takashi Inukai ,  Yukihiro Urakawa

    IPC分类号： G01K15/00

    CPC分类号： G01K15/002 ,  G01K7/425

    摘要： A semiconductor integrated circuit according to the examples of the present invention is applied to a system using a first power source voltage and a second power source voltage independent of the first power source voltage and includes a first area to which the first power source voltage is supplied, a thermal sensor placed in the first area, and a first input path placed in the first area, for transferring trimming data that determine the control contents of the thermal sensor to the thermal sensor.

    摘要翻译： 根据本发明的实施例的半导体集成电路被应用于使用与第一电源电压无关的第一电源电压和第二电源电压的系统，并且包括提供第一电源电压的第一区域 放置在第一区域中的热传感器和放置在第一区域中的第一输入路径，用于将确定热传感器的控制内容的修整数据传送到热传感器。

    Semiconductor integrated circuit
    5.
    发明申请
    Semiconductor integrated circuit 失效
    半导体集成电路

    公开(公告)号：US20060224351A1

    公开(公告)日：2006-10-05

    申请号：US11261536

    申请日：2005-10-31

    申请人： Takashi Inukai ,  Yukihiro Urakawa

    发明人： Takashi Inukai ,  Yukihiro Urakawa

    IPC分类号： G01K1/08

    CPC分类号： G01K15/002 ,  G01K7/425

    摘要： A semiconductor integrated circuit according to the examples of the present invention is applied to a system using a first power source voltage and a second power source voltage independent of the first power source voltage and includes a first area to which the first power source voltage is supplied, a thermal sensor placed in the first area, and a first input path placed in the first area, for transferring trimming data that determine the control contents of the thermal sensor to the thermal sensor.

    摘要翻译： 根据本发明的实施例的半导体集成电路被应用于使用与第一电源电压无关的第一电源电压和第二电源电压的系统，并且包括提供第一电源电压的第一区域 放置在第一区域中的热传感器和放置在第一区域中的第一输入路径，用于将确定热传感器的控制内容的修整数据传送到热传感器。

    Semiconductor integrated circuit and method for testing a semiconductor integrated circuit
    6.
    发明申请
    Semiconductor integrated circuit and method for testing a semiconductor integrated circuit 失效
    半导体集成电路和半导体集成电路测试方法

    公开(公告)号：US20050134300A1

    公开(公告)日：2005-06-23

    申请号：US11001155

    申请日：2004-12-02

    申请人： Natsuki Kushiyama ,  Yukihiro Urakawa

    发明人： Natsuki Kushiyama ,  Yukihiro Urakawa

    IPC分类号： G01R31/28 ,  G01R31/02 ,  G01R31/30 ,  G01R31/317 ,  H01L21/822 ,  H01L27/04

    CPC分类号： G01R31/31725 ,  G01R31/3016

    摘要： A semiconductor integrated circuit includes a first delay circuit generating a first delay clock; a second delay circuit generating a second delay clock; a first register registering a value of a first delay of the first delay clock; a second register registering a value of a second delay of the second delay clock; a clock supplying circuit supplying a clock signal to the first and second delay circuits; a phase comparator detecting a phase difference between the first and second delay clocks; and a built-in test circuit configured to control the first and second registers so that the value of the first delay can be registered in the first register and the value of the second delay can be registered in the second register.

    摘要翻译： 半导体集成电路包括产生第一延迟时钟的第一延迟电路; 产生第二延迟时钟的第二延迟电路; 注册第一延迟时钟的第一延迟值的第一寄存器; 第二寄存器，其记录所述第二延迟时钟的第二延迟值; 时钟供给电路，向第一和第二延迟电路提供时钟信号; 相位比较器，检测第一和第二延迟时钟之间的相位差; 以及内置测试电路，被配置为控制第一和第二寄存器，使得可以将第一延迟的值登记在第一寄存器中，并且可以将第二延迟的值登记在第二寄存器中。

    Semiconductor memory device having refresh circuits
    7.
    发明授权
    Semiconductor memory device having refresh circuits 失效
    具有刷新电路的半导体存储器件

    公开(公告)号：US5517454A

    公开(公告)日：1996-05-14

    申请号：US355762

    申请日：1994-12-14

    申请人： Katsuhiko Sato ,  Kiyofumi Ochii ,  Yukihiro Urakawa

    发明人： Katsuhiko Sato ,  Kiyofumi Ochii ,  Yukihiro Urakawa

    IPC分类号： G11C11/405 ,  G11C11/403 ,  G11C11/406 ,  G11C11/409 ,  G11C7/00

    CPC分类号： G11C11/406

    摘要： A semiconductor memory device including dynamic memory cells for which refresh operation is required, wherein one fundamental cycle consists of a normal operation for carrying out writing or reading into or from the memory cells and a refresh operation. This semiconductor memory device comprising: a refresh signal generating circuit supplied with a clock signal to generate a refresh signal indicating start of refresh; a count signal generating circuit supplied with the clock signal to generate a count signal required for selection of a memory cell to be refreshed, a refresh counter circuit supplied with the refresh signal and the count signal to select a word line and a bit line to which a memory cell to be refreshed is connected; and a precharge circuit supplied with the refresh signal to carry out precharge of the bit line for refresh.

    摘要翻译： 一种包括需要刷新操作的动态存储器单元的半导体存储器件，其中一个基本周期包括用于执行对存储器单元的写入或读取的正常操作和刷新操作。 该半导体存储器件包括：刷新信号发生电路，被提供有时钟信号以产生指示刷新开始的刷新信号; 提供有时钟信号的计数信号发生电路，以产生选择要刷新的存储单元所需的计数信号，提供有刷新信号的刷新计数器电路和计数信号以选择字线和位线 连接要更新的存储单元; 以及提供有刷新信号的预充电电路，以执行用于刷新的位线的预充电。

    Semiconductor integrated circuit
    8.
    发明授权
    Semiconductor integrated circuit 有权
    半导体集成电路

    公开(公告)号：US08867868B2

    公开(公告)日：2014-10-21

    申请号：US11906725

    申请日：2007-10-03

    申请人： Natsuki Kushiyama ,  Yukihiro Urakawa

    发明人： Natsuki Kushiyama ,  Yukihiro Urakawa

    IPC分类号： G02B6/30 ,  G02B6/43 ,  G02B6/12 ,  G06F1/10

    CPC分类号： G02B6/12002 ,  G02B6/43 ,  G02B2006/12104 ,  G06F1/105

    摘要： A semiconductor integrated circuit according to an example of the present invention includes a chip substrate, first and second switches arranged on the chip substrate in which ON/OFF of an electrical signal path is directly controlled by an optical signal, a first light shielding layer arranged above the chip substrate, an optical waveguide layer arranged on the first light shielding layer, a second light shielding layer arranged on the optical waveguide layer, a reflecting plate arranged in the optical waveguide layer to change an advancing direction of the optical signal, and means for leading the optical signal to the first and second switches from an inside of the optical waveguide layer. The first and second light shielding layers reflect the optical signal, and the optical waveguide layer transmits the optical signal radially.

    摘要翻译： 根据本发明的实施例的半导体集成电路包括芯片基板，布置在芯片基板上的第一和第二开关，其中电信号路径的导通/截止由光信号直接控制，第一遮光层布置 在芯片基板的上方配置有布置在第一遮光层上的光波导层，布置在光波导层上的第二遮光层，布置在光波导层中以改变光信号的前进方向的反射板， 用于将光信号从光波导层的内部引导到第一和第二开关。 第一和第二遮光层反射光信号，并且光波导层径向透射光信号。

    SEMICONDUCTOR INTEGRATED MEMORY CIRCUIT AND TRIMMING METHOD THEREOF
    9.
    发明申请
    SEMICONDUCTOR INTEGRATED MEMORY CIRCUIT AND TRIMMING METHOD THEREOF 有权
    半导体集成存储器电路及其研制方法

    公开(公告)号：US20100054025A1

    公开(公告)日：2010-03-04

    申请号：US12540022

    申请日：2009-08-12

    申请人： Atsushi Kawasumi ,  Yukihiro Urakawa

    发明人： Atsushi Kawasumi ,  Yukihiro Urakawa

    IPC分类号： G11C11/00 ,  G11C5/14 ,  G11C7/02

    CPC分类号： G11C7/1045 ,  G11C7/065 ,  G11C11/412

    摘要： A latch circuit includes first and second inverters connected in a cross-coupling manner at a first node and a second node. A voltage application circuit applies a hot carrier generation voltage for generating hot carrier at a transistor included in the first inverter or the second inverter. An inverting circuit generates an inversion signal as an inverted signal of an amplified signal provided from the latch circuit to the bit line pair to provide the inversion signal to the first node and the second node.

    摘要翻译： 锁存电路包括在第一节点和第二节点处以交叉耦合方式连接的第一和第二反相器。 电压施加电路在包含在第一逆变器或第二逆变器中的晶体管上施加用于产生热载流子的热载流子产生电压。 反相电路产生作为从锁存电路向位线对提供的放大信号的反相信号的反相信号，以向第一节点和第二节点提供反转信号。

    Upper-layer metal power standard cell
    10.
    发明授权
    Upper-layer metal power standard cell 失效
    上层金属电源标准电池

    公开(公告)号：US07501689B2

    公开(公告)日：2009-03-10

    申请号：US11060727

    申请日：2005-02-18

    申请人： Takeshi Yoshida ,  Yukihiro Urakawa

    发明人： Takeshi Yoshida ,  Yukihiro Urakawa

    IPC分类号： H01L21/822

    CPC分类号： H01L27/11807 ,  H01L23/5286 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An upper-layer metal power standard cell comprises: a basic power metal layer which is disposed in an upper layer of a circuit and which supplies a power voltage from an outside of the upper-layer metal power standard cell; a transistor element layer which is formed in a predetermined arrangement on a circuit substrate under the basic power metal layer; and an inner wire layer which supplies the power voltage to the transistor element layer disposed under the basic power metal layer disposed in the upper layer from the basic power metal layer.

    摘要翻译： 上层金属电力标准电池包括：基本功率金属层，其设置在电路的上层中，并从上层金属电力标准电池的外部提供电力电压; 在基本功率金属层下的电路基板上以预定的布置形成的晶体管元件层; 以及内部电线层，其将功率电压提供到从基本功率金属层设置在上层中的基本功率金属层下方的晶体管元件层。