摘要:
A wet process performed in the manufacture of semiconductor devices with cathode water and anode water produced from electrolyte using a 3-cell electrolyzer having an intermediate cell for the electrolyte. The 3-cell electrolyzer includes an anode cell, a cathode cell, and an intermediate cell between the anode and cathode cells, which are partitioned by ion exchange membranes. Deionized water is supplied into the anode and cathode cells, and the intermediate cell is filled with an electrolytic aqueous solution to perform electrolysis. The anode water containing oxidative substances or the cathode water containing reductive substances, which are produced by the electrolysis process, are used in the wet process.
摘要:
A method of forming fine pitch hardmask patterns includes forming a hardmask layer on a substrate and forming a plurality of first mask patterns on the hardmask layer. A buffer layer is formed on the plurality of first mask patterns, and has an upper surface defining recesses between adjacent first mask patterns. Second mask patterns are formed within the recesses formed in the upper surface of the buffer layer. The buffer layer is partially removed to expose upper surfaces of the plurality of first mask patterns, and the buffer layer is then partially removed using the first mask patterns and the second mask patterns as an etch mask to expose the hardmask layer between the first mask pattern and the second mask pattern. Using the first mask patterns and the second mask patterns as an etch mask, the hardmask layer is etched to form hardmask patterns.
摘要:
A method of forming fine pitch hardmask patterns includes forming a hardmask layer on a substrate and forming a plurality of first mask patterns on the hardmask layer. A buffer layer is formed on the plurality of first mask patterns, and has an upper surface defining recesses between adjacent first mask patterns. Second mask patterns are formed within the recesses formed in the upper surface of the buffer layer. The buffer layer is partially removed to expose upper surfaces of the plurality of first mask patterns, and the buffer layer is then partially removed using the first mask patterns and the second mask patterns as an etch mask to expose the hardmask layer between the first mask pattern and the second mask pattern. Using the first mask patterns and the second mask patterns as an etch mask, the hardmask layer is etched to form hardmask patterns.
摘要:
A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.
摘要:
A cleaning apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.
摘要:
A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed. The method further includes the steps of: forming a conductive pad electrically connected to the semiconductor substrate and a lower insulating layer surrounding the conductive pad; and forming bit line stacks on the lower insulating layer, wherein the interlayer dielectric layer covers the bit line stacks, and the contact hole between the bit line stacks exposes the conductive pad.
摘要:
A cleaning solution includes acetic acid, an inorganic acid, a fluoride compound, and deionized water, and may further include a corrosion inhibitor, a chelating agent, or a combination thereof. The cleaning solution may be used in the formation of a metal pattern in which a metal film including ruthenium is formed on a surface of a substrate, and a portion of the metal film is dry-etched to form a metal film pattern. After dry-etching, the metal film pattern is cleaned with the cleaning solution to remove an etching by-product layer around the metal film pattern. The cleaning solution may also be used to remove an etching by-product layer around an oxide film pattern prior to dry-etching of the metal film.
摘要:
A method of fabricating a flash memory having a U-shape floating gate is provided. The method includes forming adjacent isolation layers separated by a gap and forming a tunnel oxide layer in the gap. After a conductive layer is formed on the tunnel oxide layer to a thickness not to fill the gap, a polishing sacrificial layer is formed on the conductive layer. The sacrificial layer and the conductive layer on the isolation layers are removed, thereby forming a U-shape floating gate self-aligned in the gap, and concurrently forming a sacrificial layer pattern within an inner portion of the floating gate. Selected isolation layers are then recessed to expose sidewalls of the floating gate. The sacrificial layer pattern is then removed from the floating gate to expose an upper surface of the floating gate.
摘要:
In one aspect, a method of fabricating a semiconductor memory device is provided which includes forming a mold insulating film over first and second portions of a semiconductor substrate, where the mold insulating film includes a plurality of storage node electrode holes spaced apart over the first portion of the semiconductor substrate. The method further includes forming a plurality of storage node electrodes on inner surfaces of the storage node electrode holes, respectively, and forming a capping film which covers the storage node electrodes and a first portion of the mold insulating film located over the first portion of the semiconductor substrate, and which exposes a second portion of the mold insulating film located over the second portion of the semiconductor substrate. The method further includes selectively removing, including wet etching, the mold insulating film to expose a sidewall of at least one storage node electrode among the storage node electrodes covered by the capping film, and removing the capping film by dry etching to expose upper portions of the storage node electrodes.
摘要:
In one aspect, a method of fabricating a semiconductor memory device is provided which includes forming a mold insulating film over first and second portions of a semiconductor substrate, where the mold insulating film includes a plurality of storage node electrode holes spaced apart over the first portion of the semiconductor substrate. The method further includes forming a plurality of storage node electrodes on inner surfaces of the storage node electrode holes, respectively, and forming a capping film which covers the storage node electrodes and a first portion of the mold insulating film located over the first portion of the semiconductor substrate, and which exposes a second portion of the mold insulating film located over the second portion of the semiconductor substrate. The method further includes selectively removing, including wet etching, the mold insulating film to expose a sidewall of at least one storage node electrode among the storage node electrodes covered by the capping film, and removing the capping film by dry etching to expose upper portions of the storage node electrodes.