Abstract:
A DRAM memory cell and a method of making a DRAM memory cell are provided. The DRAM memory cell includes a semiconductor substrate, including a trench formed therein and a buried plate region, at least a first doped region and a second doped region provided on a sidewall of the trench above the buried plate region in the substrate, where the first doped region contains carbon and the second doped region contains germanium provided in a portion of the first region, a dielectric layer formed on the bottom and sidewall of the trench, at least one polysilicon layer deposited in the trench and on the dielectric layer to cover the dielectric layer, and a transistor formed on a surface of the semiconductor substrate.
Abstract:
A process for manufacturing a pixel array of top-emitting OLED pixel is provided. The process comprises: providing a substrate having at least two poly-silicon islands defined thereon, and defining an implantation region on the substrate; forming a gate insulator layer and a gate metal layer sequentially, and then defining a gate; carrying out an implantation process for forming the doped region; forming an inter-layer dielectric (ILD) layer and etching a plurality of contact holes thereon; forming a source/drain metal layer and defining a source/drain pattern thereon; wherein the patterned source/drain metal layer extends to the pixel array of the top-emitting OLED so as to be employed as a bottom electrode of the top-emitting OLED. The characteristic of the present invention is that the bottom electrode is substantially the portion of the source/drain extending to the pixel array of the top-emitting OLED, so that the array manufacturing can save at least two masks.
Abstract:
The present invention discloses an apparatus of ion sensitive thin film transistor and method of manufacturing of the same. The apparatus of the invention, formed on a glass substrate, comprises an ion detector, formed on said glass substrate, including a plurality of ion sensitive transistors and a signal processor with display, also formed on said glass substrate, being coupled with said ion detector. The signal processor with display further comprises a circuit of signal processing, a driver circuit, and a display, wherein by means of the method of Low Temperature PolySilicon, i.e. LTPS technology, the invention integrates said ion detector and said signal processor with display on said glass substrate to become an tiny, light and thin apparatus with portable and disposable characteristics.
Abstract:
An optical mouse has a housing, a printed circuit board, a light source unit, a photodetector unit, a light-guiding unit and a lens unit. The light source unit has different colors of image light sources and is disposed on the printed circuit board. The light-guiding unit is arranged in the housing and adjacent to the light source unit for guiding a non-complementary color light relative to a reflection surface from one of the image light sources to the reflection surface. The lens unit is arranged in the housing and positioned below the photodetector unit for converging a reflected light reflected by the reflection surface into the photodetector unit. Furthermore, the optical mouse can be operated on various colors of reflection surfaces, and still retains better sensitivity.
Abstract:
A puzzle includes a base board on which set a number of cutouts, and the same number of puzzle pieces with shapes corresponding to the cutouts and images on both sides. With images on both sides of the puzzle pieces, the present invention provides two different jigsaw puzzles for assembly.
Abstract:
A digital phase lock loop that does not depend on a voltage controlled oscillator (VCO) for phase locking. A phase detector (PD), terminated with a latch, controls an up/down counter that programs an increase/decrease of delay on the delay line. The tapped output of the delay line goes through a two phase generator which in turn feeds back to the PD for comparison with the reference clock. This process is repeated until phase locking is obtained.