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公开(公告)号：US06656285B1
公开(公告)日：2003-12-02
申请号：US09903299
申请日：2001-07-11
IPC分类号： C23C1600
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
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公开(公告)号：US07556688B2
公开(公告)日：2009-07-07
申请号：US11134200
申请日：2005-05-20
IPC分类号： C30B25/00
CPC分类号： C30B25/00 , C30B11/00 , C30B11/14 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02378 , H01L21/02389 , H01L21/0254 , H01L21/0262
摘要： A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译： 提供了一种用于生长体GaN和AlGaN单晶晶粒的方法，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。
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公开(公告)号：US06616757B1
公开(公告)日：2003-09-09
申请号：US09903298
申请日：2001-07-11
IPC分类号： C30B2502
CPC分类号： C30B25/00 , C30B29/403 , C30B29/406
摘要： A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译： 提供了一种用于生长体GaN和AlGaN单晶晶粒的方法，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。
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公开(公告)号：US06613143B1
公开(公告)日：2003-09-02
申请号：US09900833
申请日：2001-07-06
IPC分类号： C30B2500
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译： 提供了一种用于生长体GaN和AlGaN单晶晶粒的方法，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。
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公开(公告)号：US08372199B2
公开(公告)日：2013-02-12
申请号：US12141944
申请日：2008-06-19
IPC分类号： C30B21/02
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
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公开(公告)号：US08092596B2
公开(公告)日：2012-01-10
申请号：US12138487
申请日：2008-06-13
IPC分类号： C30B25/00
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
摘要翻译： 提供了优选使用改进的HVPE工艺制造的块状GaN和AlGaN单晶晶粒。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，本体材料可以在生长期间掺杂，例如以实现n，i-或p型导电性。
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公开(公告)号：US07279047B2
公开(公告)日：2007-10-09
申请号：US10632736
申请日：2003-08-01
IPC分类号： C23C16/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译： 提供一种用于生长体GaN和AlGaN单晶晶粒的装置，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。
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公开(公告)号：US06936357B2
公开(公告)日：2005-08-30
申请号：US10355426
申请日：2003-01-31
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
摘要翻译： 提供了优选使用改进的HVPE工艺制造的块状GaN和AlGaN单晶晶粒。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，本体材料可以在生长期间掺杂，例如以实现n，i-或p型导电性。
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公开(公告)号：US06576054B1
公开(公告)日：2003-06-10
申请号：US09901926
申请日：2001-07-09
IPC分类号： C30B2500
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译： 提供了一种用于生长体GaN和AlGaN单晶晶粒的方法，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。
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公开(公告)号：US07611586B2
公开(公告)日：2009-11-03
申请号：US11868880
申请日：2007-10-08
IPC分类号： C23C16/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译： 提供一种用于生长体GaN和AlGaN单晶晶粒的装置，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。
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