公开(公告)号：US08835093B2

公开(公告)日：2014-09-16

申请号：US13133751

申请日：2009-12-16

申请人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

发明人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

IPC分类号： G03F7/004 ,  G03F7/11 ,  G03F7/075 ,  G03F7/09 ,  C08L83/04 ,  H01L21/308 ,  C09D183/04

CPC分类号： H01L21/3086 ,  C08L83/04 ,  C09D183/04 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R1aR2bSi(R3)4−(a+b) (1). A composition comprising a mixture of a hydrolyzable organosilane of Formula (1), and at least one organic silicon compound selected from the group consisting of a compound of Formula (2): R4aSi(R5)4−a (2) and a compound of Formula (3): [R6cSi(R7)3−c]2Yb (3); a hydrolysis product of the mixture; or a hydrolysis-condensation product of the mixture.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 一种用于光刻的抗蚀剂下层膜形成组合物，其包含含有阴离子基团的硅烷化合物，其中含有阴离子基团的硅烷化合物是其中含有阴离子基团的有机基团与硅原子键合的可水解的有机硅烷，并且阴离子基团形成 盐结构，其水解产物或其水解缩合产物。 阴离子基团可以是羧酸阴离子，酚盐阴离子，磺酸阴离子或膦酸阴离子。 可水解的有机硅烷可以是式（1）的化合物：R1aR2bSi（R3）4-（a + b）（1）。 一种组合物，其包含式（1）的可水解有机硅烷和至少一种选自式（2）的化合物：R4aSi（R5）4-a（2）的化合物和 式（3）：[R6cSi（R7）3-c] 2Yb（3）; 该混合物的水解产物; 或该混合物的水解缩合产物。

公开(公告)号：US20110143149A1

公开(公告)日：2011-06-16

申请号：US13058109

申请日：2009-08-13

申请人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

发明人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

IPC分类号： B32B9/04 ,  C07F7/02 ,  C09D7/12 ,  H01L21/311

CPC分类号： G03F7/0755 ,  C08G77/26 ,  C09D5/006 ,  C09D183/08 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/095 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4-(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

摘要翻译： 提供了用于形成抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物，能够用作硬掩模或底部抗反射涂层，或者不与抗蚀剂混合并具有干蚀刻速率的抗蚀剂下层膜 高于抗蚀剂。 一种包含具有鎓基的硅烷化合物的成膜组合物，其中具有鎓基的硅烷化合物是其分子中具有鎓基，其水解产物或其水解缩合产物的可水解的有机硅烷。 该组合物用作光刻的抗蚀剂下层膜形成组合物。 包含具有鎓基的硅烷化合物和不具有鎓基的硅烷化合物的组合物，其中具有鎓基的硅烷化合物以小于1摩尔％的比例存在于全部硅烷化合物中，例如0.01至0.95 ％摩尔。 可水解的有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。 14.一种抗蚀剂下层膜，其通过将权利要求1〜14中任一项所述的组合物涂布在半导体基板上，并烘烤该组合物而得到。

公开(公告)号：US20120070994A1

公开(公告)日：2012-03-22

申请号：US13375517

申请日：2010-05-28

申请人： Yuta Kanno ,  Makoto Nakajima ,  Wataru Shibayama

发明人： Yuta Kanno ,  Makoto Nakajima ,  Wataru Shibayama

IPC分类号： H01L21/312 ,  C07F7/18 ,  B32B9/00 ,  C08K5/548

CPC分类号： G03F7/11 ,  G03F7/0752 ,  G03F7/091 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [R1aSi(R2)3-a]bR3 wherein R3 has a partial structure of Formula (2): R4—S—R5.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成组合物; 以及使用用于光刻的下层膜形成组合物的抗蚀剂图案的形成方法。 一种用于光刻的抗蚀剂下层膜形成组合物，包括：含硅原子的化合物，含有含硫原子的基团的可水解的有机硅烷，其水解产物或其水解缩合产物，其中在整个含硅原子的 化合物，硫原子与硅原子的比例小于5摩尔％。 可水解的有机硅烷优选为式（1）的化合物：[R a Si（R 2）3-a] b R 3，其中R 3具有式（2）的部分结构：R4-S-R5。

公开(公告)号：US09023588B2

公开(公告)日：2015-05-05

申请号：US13580066

申请日：2011-02-18

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/26 ,  C07F7/18 ,  C09D183/08 ,  C08G77/388

CPC分类号： C07F7/1804 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/094 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) wherein R1 is Formula (2): in which R4 is an organic group, and R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X1 is Formula (3), Formula (4), or Formula (5): R2 is an organic group, and R3 is a hydrolysable group.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 用于光刻的抗蚀剂下层膜形成组合物包括硅烷化合物，可水解的有机硅烷，其水解产物或其水解缩合产物，其中可水解的有机硅烷是式（1）的可水解的有机硅烷：R1aR2bSi（R3） 4-（a + b）式（1）其中R1是式（2）：其中R4是有机基团，R5是C1-10亚烷基，羟基亚烷基，硫醚键，醚键， 酯键或其组合，X 1为式（3），式（4）或式（5）：R 2为有机基团，R 3为可水解基团。

公开(公告)号：US08864894B2

公开(公告)日：2014-10-21

申请号：US13058109

申请日：2009-08-13

申请人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

发明人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

IPC分类号： C09D183/08 ,  C09D5/00 ,  G03F7/075 ,  G03F7/004 ,  G03F7/095 ,  C08G77/26

CPC分类号： G03F7/0755 ,  C08G77/26 ,  C09D5/006 ,  C09D183/08 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/095 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4−(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

摘要翻译： 提供了用于形成抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物，能够用作硬掩模或底部抗反射涂层，或者不与抗蚀剂混合并具有干蚀刻速率的抗蚀剂下层膜 高于抗蚀剂。 一种包含具有鎓基的硅烷化合物的成膜组合物，其中具有鎓基的硅烷化合物是其分子中具有鎓基，其水解产物或其水解缩合产物的可水解的有机硅烷。 该组合物用作光刻的抗蚀剂下层膜形成组合物。 包含具有鎓基的硅烷化合物和不具有鎓基的硅烷化合物的组合物，其中具有鎓基的硅烷化合物以小于1摩尔％的比例存在于全部硅烷化合物中，例如0.01至0.95 ％摩尔。 可水解的有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。 14.一种抗蚀剂下层膜，其通过将权利要求1〜14中任一项所述的组合物涂布在半导体基板上，并烘烤该组合物而得到。

公开(公告)号：US20120315765A1

公开(公告)日：2012-12-13

申请号：US13580066

申请日：2011-02-18

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： C09D183/08 ,  B32B27/00 ,  C07F7/04 ,  H01L21/311 ,  C08K3/20 ,  C08K5/41

CPC分类号： C07F7/1804 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/094 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) wherein R1 is Formula (2): in which R4 is an organic group, and R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X1 is Formula (3), Formula (4), or Formula (5): R2 is an organic group, and R3 is a hydrolysable group.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 用于光刻的抗蚀剂下层膜形成组合物包括硅烷化合物，可水解的有机硅烷，其水解产物或其水解缩合产物，其中可水解的有机硅烷是式（1）的可水解的有机硅烷：R1aR2bSi（R3） 4-（a + b）式（1）其中R1是式（2）：其中R4是有机基团，R5是C1-10亚烷基，羟基亚烷基，硫醚键，醚键， 酯键或其组合，X 1为式（3），式（4）或式（5）：R 2为有机基团，R 3为可水解基团。

公开(公告)号：US20120178261A1

公开(公告)日：2012-07-12

申请号：US13496768

申请日：2010-09-07

申请人： Yuta Kanno ,  Makoto Nakajima ,  Wataru Shibayama

发明人： Yuta Kanno ,  Makoto Nakajima ,  Wataru Shibayama

IPC分类号： H01L21/311 ,  C07F7/18 ,  G03F7/00

CPC分类号： C08G77/04 ,  C08G77/28 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094

摘要： There is provided a lithographic resist underlayer film-forming composition for forming a resist underlayer film which can be used as a hard mask. A lithographic resist underlayer film-forming composition including a silane compound having sulfonamide group, wherein the silane compound having sulfonamide group is a hydrolyzable organosilane having a sulfonamide group in the molecule, a hydrolyzate thereof, or a hydrolytic condensation product thereof. The composition including a silane compound having sulfonamide group and a silane compound lacking a sulfonamide group, wherein the silane compound having sulfonamide group is present within the silane compounds overall in a proportion of less than 1 mol %, for example 0.1 to 0.95 mol %.

摘要翻译： 提供了可用作硬掩模的用于形成抗蚀剂下层膜的平版印刷抗蚀剂下层膜形成组合物。 含有具有磺酰胺基的硅烷化合物的平版印刷抗蚀剂下层膜形成用组合物，其中，具有磺酰胺基的硅烷化合物为分子内具有磺酰胺基的水解性有机硅烷，其水解物或其水解缩合物。 所述组合物包括具有磺酰胺基团的硅烷化合物和不具有磺酰胺基团的硅烷化合物，其中具有磺酰胺基团的硅烷化合物总体上以小于1摩尔％，例如0.1至0.95摩尔％的比例存在于硅烷化合物中。

公开(公告)号：US09760006B2

公开(公告)日：2017-09-12

申请号：US12811424

申请日：2009-01-08

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/075 ,  G03F7/30 ,  G03F7/32 ,  G03F7/36 ,  G03F7/40 ,  C09D183/08 ,  C08G77/26

CPC分类号： G03F7/11 ,  C08G77/26 ,  C09D183/08 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/30 ,  G03F7/322 ,  G03F7/36 ,  G03F7/40

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising: a hydrolyzable organosilane having a urea group; a hydrolysis product thereof; or a hydrolysis-condensation product thereof. The hydrolyzable organosilane is for example a compound of Formula (1): where at least one of three groups T1, T2, and T3 is a group of Formula (2):

公开(公告)号：US08426112B2

公开(公告)日：2013-04-23

申请号：US12676687

申请日：2008-09-10

申请人： Makoto Nakajima ,  Wataru Shibayama ,  Yuta Kanno

发明人： Makoto Nakajima ,  Wataru Shibayama ,  Yuta Kanno

IPC分类号： G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38

CPC分类号： G03F7/091 ,  G03F7/0752

摘要： There is provided a resist underlayer film for lithography causing no intermixing with a photoresist and having a dry etching rate higher than that of the photoresist, and a resist underlayer film forming composition for forming the underlayer film. A resist underlayer film forming composition for lithography comprising: a polymer containing a partial structure of Formula (1): where X1 is a group of Formula (2), Formula (3), Formula (4) or Formula (4-1): and a solvent. The polymer may contain, besides the partial structure of Formula (1), a partial structure of Formula (5): (R1)a(R3)bSi(O—)4−(a+b)  Formula (5) and/or a partial structure of Formula (6): [(R4)cSi(O—)3−c]2Y  Formula (6).

摘要翻译： 提供了一种用于光刻的抗蚀剂下层膜，其不与光致抗蚀剂混合并且具有比光致抗蚀剂更高的干蚀刻速率，以及用于形成下层膜的抗蚀剂下层膜组合物。 1，一种含有式（1）部分结构的聚合物：其中X1是式（2），式（3），式（4）或式（4-1）的基团： 和溶剂。 除了式（1）的部分结构之外，聚合物可以包含式（5）的部分结构：（R1）a（R3）bSi（O-）4-（a + b）式（5）和/或 式（6）的部分结构：[（R4）cSi（O-）3-c] 2YFormula（6）。

公开(公告)号：US20100291487A1

公开(公告)日：2010-11-18

申请号：US12811424

申请日：2009-01-08

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： G03F7/20 ,  C08G77/26 ,  C08L83/00

CPC分类号： G03F7/11 ,  C08G77/26 ,  C09D183/08 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/30 ,  G03F7/322 ,  G03F7/36 ,  G03F7/40

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising: a hydrolyzable organosilane having a urea group; a hydrolysis product thereof; or a hydrolysis-condensation product thereof. The hydrolyzable organosilane is for example a compound of Formula (1): where at least one of three groups T1, T2, and T3 is a group of Formula (2):

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 一种用于光刻的抗蚀剂下层膜形成组合物，包括：具有脲基的可水解的有机硅烷; 其水解产物; 或其水解缩合产物。 可水解的有机硅烷是例如式（1）的化合物：其中三个基团T1，T2和T3中的至少一个是式（2）的基团：