公开(公告)号：US09760006B2

公开(公告)日：2017-09-12

申请号：US12811424

申请日：2009-01-08

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/075 ,  G03F7/30 ,  G03F7/32 ,  G03F7/36 ,  G03F7/40 ,  C09D183/08 ,  C08G77/26

CPC分类号： G03F7/11 ,  C08G77/26 ,  C09D183/08 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/30 ,  G03F7/322 ,  G03F7/36 ,  G03F7/40

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising: a hydrolyzable organosilane having a urea group; a hydrolysis product thereof; or a hydrolysis-condensation product thereof. The hydrolyzable organosilane is for example a compound of Formula (1): where at least one of three groups T1, T2, and T3 is a group of Formula (2):

公开(公告)号：US08877425B2

公开(公告)日：2014-11-04

申请号：US13880787

申请日：2011-10-20

申请人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

发明人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

IPC分类号： G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/40

CPC分类号： G03F7/091 ,  C08G77/14 ,  C08G77/26 ,  C09D183/06 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/3081 ,  C08L33/16 ,  C09D183/08

摘要： A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds.

摘要翻译： 用于光刻的抗蚀剂下层膜形成组合物包括：作为组分（I），通过在其分子中聚合具有两个或更多个可自由基聚合的双键的单体A获得的含氟高支化聚合物，具有氟烷基的单体B 和分子中的至少一个自由基聚合性双键，以及分子中具有含硅原子的有机基团和至少一个自由基聚合性双键的单体D，在聚合引发剂C的存在下， 相对于单体A，单体B和单体D的总摩尔数为5摩尔％以上且200摩尔％以下。 作为组分（II），可水解硅烷化合物，其水解产物，其水解缩合产物或这些化合物的组合的含硅化合物。

公开(公告)号：US20130183830A1

公开(公告)日：2013-07-18

申请号：US13825158

申请日：2011-09-14

申请人： Satoshi Takeda ,  Makoto Nakajima ,  Yuta Kanno

发明人： Satoshi Takeda ,  Makoto Nakajima ,  Yuta Kanno

IPC分类号： H01L21/033

CPC分类号： H01L21/0332 ,  C08G77/14 ,  C08G77/16 ,  C09D183/04 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094

摘要： Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

摘要翻译： 本文描述了用于形成用于溶剂可显影抗蚀剂的下层膜的组合物。 这些组合物可以包括具有与含有保护的脂族醇基的有机基团键合的硅原子的水解性有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物，或其组合和溶剂。 该组合物可以形成抗蚀剂下层膜，该抗蚀剂下层膜包括可水解的有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物或其组合，硅烷化合物中硅原子与硅原子键合的硅原子 相对于硅原子总量，含有保护的脂族醇基的有机基团的比例为0.1〜40摩尔％。 还描述了将组合物施加到半导体衬底上并烘烤该组合物以形成抗蚀剂下层膜的方法。

公开(公告)号：US08426112B2

公开(公告)日：2013-04-23

申请号：US12676687

申请日：2008-09-10

申请人： Makoto Nakajima ,  Wataru Shibayama ,  Yuta Kanno

发明人： Makoto Nakajima ,  Wataru Shibayama ,  Yuta Kanno

IPC分类号： G03F7/09 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38

CPC分类号： G03F7/091 ,  G03F7/0752

摘要： There is provided a resist underlayer film for lithography causing no intermixing with a photoresist and having a dry etching rate higher than that of the photoresist, and a resist underlayer film forming composition for forming the underlayer film. A resist underlayer film forming composition for lithography comprising: a polymer containing a partial structure of Formula (1): where X1 is a group of Formula (2), Formula (3), Formula (4) or Formula (4-1): and a solvent. The polymer may contain, besides the partial structure of Formula (1), a partial structure of Formula (5): (R1)a(R3)bSi(O—)4−(a+b)  Formula (5) and/or a partial structure of Formula (6): [(R4)cSi(O—)3−c]2Y  Formula (6).

摘要翻译： 提供了一种用于光刻的抗蚀剂下层膜，其不与光致抗蚀剂混合并且具有比光致抗蚀剂更高的干蚀刻速率，以及用于形成下层膜的抗蚀剂下层膜组合物。 1，一种含有式（1）部分结构的聚合物：其中X1是式（2），式（3），式（4）或式（4-1）的基团： 和溶剂。 除了式（1）的部分结构之外，聚合物可以包含式（5）的部分结构：（R1）a（R3）bSi（O-）4-（a + b）式（5）和/或 式（6）的部分结构：[（R4）cSi（O-）3-c] 2YFormula（6）。

公开(公告)号：US20100291487A1

公开(公告)日：2010-11-18

申请号：US12811424

申请日：2009-01-08

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： G03F7/20 ,  C08G77/26 ,  C08L83/00

CPC分类号： G03F7/11 ,  C08G77/26 ,  C09D183/08 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/30 ,  G03F7/322 ,  G03F7/36 ,  G03F7/40

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising: a hydrolyzable organosilane having a urea group; a hydrolysis product thereof; or a hydrolysis-condensation product thereof. The hydrolyzable organosilane is for example a compound of Formula (1): where at least one of three groups T1, T2, and T3 is a group of Formula (2):

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 一种用于光刻的抗蚀剂下层膜形成组合物，包括：具有脲基的可水解的有机硅烷; 其水解产物; 或其水解缩合产物。 可水解的有机硅烷是例如式（1）的化合物：其中三个基团T1，T2和T3中的至少一个是式（2）的基团：

公开(公告)号：US09524871B2

公开(公告)日：2016-12-20

申请号：US14236136

申请日：2012-08-10

申请人： Makoto Nakajima ,  Daisuke Sakuma ,  Yuta Kanno ,  Takahiro Kishioka

发明人： Makoto Nakajima ,  Daisuke Sakuma ,  Yuta Kanno ,  Takahiro Kishioka

IPC分类号： H01L21/027 ,  G03F7/11 ,  C07F7/18 ,  G03F7/075 ,  G03F7/09 ,  H01L21/311

CPC分类号： H01L21/0274 ,  C07F7/1804 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0276 ,  H01L21/31133

摘要： A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): [(R1)aSi(R2)(3−a)]b(R3)  Formula (1) [in Formula (1), R3 is an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si—C bond; R1 is an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

公开(公告)号：US09023588B2

公开(公告)日：2015-05-05

申请号：US13580066

申请日：2011-02-18

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/26 ,  C07F7/18 ,  C09D183/08 ,  C08G77/388

CPC分类号： C07F7/1804 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/094 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) wherein R1 is Formula (2): in which R4 is an organic group, and R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X1 is Formula (3), Formula (4), or Formula (5): R2 is an organic group, and R3 is a hydrolysable group.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 用于光刻的抗蚀剂下层膜形成组合物包括硅烷化合物，可水解的有机硅烷，其水解产物或其水解缩合产物，其中可水解的有机硅烷是式（1）的可水解的有机硅烷：R1aR2bSi（R3） 4-（a + b）式（1）其中R1是式（2）：其中R4是有机基团，R5是C1-10亚烷基，羟基亚烷基，硫醚键，醚键， 酯键或其组合，X 1为式（3），式（4）或式（5）：R 2为有机基团，R 3为可水解基团。

公开(公告)号：US08864894B2

公开(公告)日：2014-10-21

申请号：US13058109

申请日：2009-08-13

申请人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

发明人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

IPC分类号： C09D183/08 ,  C09D5/00 ,  G03F7/075 ,  G03F7/004 ,  G03F7/095 ,  C08G77/26

CPC分类号： G03F7/0755 ,  C08G77/26 ,  C09D5/006 ,  C09D183/08 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/095 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4−(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

摘要翻译： 提供了用于形成抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物，能够用作硬掩模或底部抗反射涂层，或者不与抗蚀剂混合并具有干蚀刻速率的抗蚀剂下层膜 高于抗蚀剂。 一种包含具有鎓基的硅烷化合物的成膜组合物，其中具有鎓基的硅烷化合物是其分子中具有鎓基，其水解产物或其水解缩合产物的可水解的有机硅烷。 该组合物用作光刻的抗蚀剂下层膜形成组合物。 包含具有鎓基的硅烷化合物和不具有鎓基的硅烷化合物的组合物，其中具有鎓基的硅烷化合物以小于1摩尔％的比例存在于全部硅烷化合物中，例如0.01至0.95 ％摩尔。 可水解的有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。 14.一种抗蚀剂下层膜，其通过将权利要求1〜14中任一项所述的组合物涂布在半导体基板上，并烘烤该组合物而得到。

公开(公告)号：US20140120730A1

公开(公告)日：2014-05-01

申请号：US14131945

申请日：2012-07-20

申请人： Makoto Nakajima ,  Yuta Kanno ,  Satoshi Takeda ,  Yasushi Sakaida ,  Shuhei Shigaki

发明人： Makoto Nakajima ,  Yuta Kanno ,  Satoshi Takeda ,  Yasushi Sakaida ,  Shuhei Shigaki

IPC分类号： H01L21/033 ,  H01L21/311

CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/40 ,  H01L21/31111 ,  H01L21/31138

摘要： A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: R0aTi(R1)(4−a)  Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B): R2a′R3bSi(R4)4−(a′+b)  Formula (2) a hydrolysis product, or a hydrolysis-condensation product of the mixture, wherein the number of moles of Ti atom is 50% to 90% relative to the total moles in terms of Ti atom and Si atoms in the composition.

摘要翻译： 用于形成用于制造半导体器件的抗蚀剂下层膜的薄膜形成组合物，并且抗蚀剂上层膜在不期望的UV光到达EUV抗蚀剂层之前吸收作为EUV抗蚀剂的上层的薄膜的不期望的UV光 在EUV光刻中，用于EUV抗蚀剂的底层膜（硬掩模），反向材料以及用于溶剂显影用抗蚀剂的下层膜。 该薄膜形成组合物与平版印刷工艺中的抗蚀剂一起使用，包括钛化合物（A）的混合物，其选自：R a Ti（R 1）（4-a）式（1）钛螯合化合物和可水解的钛二聚体 ，和硅化合物（B）：R2a'R3bSi（R4）4-（a'+ b）式（2）水解产物或混合物的水解缩合产物，其中Ti原子的摩尔数为 相对于组合物中Ti原子和Si原子的总摩尔数为50〜90％。

公开(公告)号：US20130224957A1

公开(公告)日：2013-08-29

申请号：US13880787

申请日：2011-10-20

申请人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

发明人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

IPC分类号： G03F7/09 ,  H01L21/308 ,  H01L21/027

CPC分类号： G03F7/091 ,  C08G77/14 ,  C08G77/26 ,  C09D183/06 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/3081 ,  C08L33/16 ,  C09D183/08

摘要： A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds.

摘要翻译： 用于光刻的抗蚀剂下层膜形成组合物包括：作为组分（I），通过在其分子中聚合具有两个或更多个可自由基聚合的双键的单体A获得的含氟高支化聚合物，具有氟烷基的单体B 和分子中的至少一个自由基聚合性双键，以及分子中具有含硅原子的有机基团和至少一个自由基聚合性双键的单体D，在聚合引发剂C的存在下， 相对于单体A，单体B和单体D的总摩尔数为5摩尔％以上且200摩尔％以下。 作为组分（II），可水解硅烷化合物，其水解产物，其水解缩合产物或这些化合物的组合的含硅化合物。