公开(公告)号：US08593840B2

公开(公告)日：2013-11-26

申请号：US13031715

申请日：2011-02-22

申请人： Yutaka Shionoiri ,  Junpei Sugao

发明人： Yutaka Shionoiri ,  Junpei Sugao

IPC分类号： H02M3/18 ,  G05F1/10

CPC分类号： H02M3/158 ,  H01L27/0688 ,  H01L27/1225 ,  H02M3/073

摘要： One object is to provide a boosting circuit whose boosting efficiency is enhanced. Another object is to provide an RFID tag including a boosting circuit whose boosting efficiency is enhanced. A node corresponding to an output terminal of a unit boosting circuit or a gate electrode of a transistor connected to the node is boosted by bootstrap operation, so that a decrease in potential which corresponds to substantially the same as the threshold potential of the transistor can be prevented and a decrease in output potential of the unit boosting circuit can be prevented.

公开(公告)号：US20110215787A1

公开(公告)日：2011-09-08

申请号：US13031715

申请日：2011-02-22

申请人： Yutaka Shionoiri ,  Junpei Sugao

发明人： Yutaka Shionoiri ,  Junpei Sugao

IPC分类号： G05F3/02

CPC分类号： H02M3/158 ,  H01L27/0688 ,  H01L27/1225 ,  H02M3/073

摘要： One object is to provide a boosting circuit whose boosting efficiency is enhanced. Another object is to provide an RFID tag including a boosting circuit whose boosting efficiency is enhanced. A node corresponding to an output terminal of a unit boosting circuit or a gate electrode of a transistor connected to the node is boosted by bootstrap operation, so that a decrease in potential which corresponds to substantially the same as the threshold potential of the transistor can be prevented and a decrease in output potential of the unit boosting circuit can be prevented.

摘要翻译： 一个目的是提供一种提升效率提高的升压电路。 另一个目的是提供一种RFID标签，其包括提升效率提高的升压电路。 与单元升压电路的输出端子或与该节点连接的晶体管的栅电极对应的节点通过自举运算来升压，使得与晶体管的阈值电位基本相同的电位降低可以是 可以防止单元升压电路的输出电位的降低。

公开(公告)号：US09448432B2

公开(公告)日：2016-09-20

申请号：US11383286

申请日：2006-05-15

申请人： Shunpei Yamazaki ,  Shingo Eguchi ,  Yutaka Shionoiri ,  Etsuko Fujimoto

发明人： Shunpei Yamazaki ,  Shingo Eguchi ,  Yutaka Shionoiri ,  Etsuko Fujimoto

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/123 ,  H01L27/1255 ,  H01L29/42384

摘要： It is an object to provide a display having high visibility and a transflective type liquid crystal display device having a reflection electrode having a concavo-convex structure formed without especially increasing the process. During manufacturing a transflective liquid crystal display device, a reflection electrode of a plurality of irregularly arranged island-like patterns and a transparent electrode of a transparent conductive film are layered in forming an electrode having transparent and reflection electrodes thereby having a concavo-convex form to enhance the scattering ability of light and hence the visibility of display. Furthermore, because the plurality of irregularly arranged island-like patterns can be formed simultaneous with an interconnection, a concavo-convex structure can be formed during the manufacturing process without especially increasing the patterning process only for forming a concavo-convex structure. It is accordingly possible to greatly reduce cost and improve productivity.

公开(公告)号：US09123581B2

公开(公告)日：2015-09-01

申请号：US13287569

申请日：2011-11-02

申请人： Toshihiko Saito ,  Yutaka Shionoiri ,  Kiyoshi Kato

发明人： Toshihiko Saito ,  Yutaka Shionoiri ,  Kiyoshi Kato

IPC分类号： G06K19/06 ,  H01L27/12 ,  G06K19/07 ,  H01L21/84

CPC分类号： H01L27/12 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/0723 ,  H01L21/84

摘要： An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit 104, but rather an output VDD0 of a rectifier circuit portion 103, which is a higher potential than the VDD, the high potential necessary for writing data to a memory can be obtained with a small circuit area.

摘要翻译： 本发明的目的是提供一种使用小电路区域可以获得将数据写入存储器所需的高电位的半导体器件。 在本发明中，通过使用升压电路的输入电压而不是调节器电路104的常规使用的输出VDD，而是使用比VDD高的电压的整流电路部分103的输出VDD0， 可以以小的电路面积获得将数据写入存储器所必需的。

公开(公告)号：US08854191B2

公开(公告)日：2014-10-07

申请号：US11716042

申请日：2007-03-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

IPC分类号： H04Q5/22 ,  G06K19/07

CPC分类号： G06K19/0723 ,  G06K19/0701 ,  G06K19/0702

摘要： To provide a semiconductor device including an RFID which can transmit and receive individual information without checking of the remaining charge of a battery or a replacing operation of the battery in accordance with deterioration over time of the battery for driving, and can maintain an excellent state for transmission and reception of individual information even when power of a radio wave or an electromagnetic wave from outside is insufficient. A battery (also described as a secondary battery) is provided as a power supply for supplying power to the RFID. Then, when power which is obtained from a signal received from outside is larger than predetermined power, its surplus power is stored in the battery; and when the power which is obtained from the signal received from outside is smaller than the predetermined power, power which is obtained from the battery is used for the power for driving.

摘要翻译： 为了提供一种包括RFID的半导体器件，其可以根据用于驱动的​​电池的劣化随时检测电池的剩余电量或电池的替换操作而发送和接收各个信息，并且可以保持优异的状态 即使在来自外部的无线电波或电磁波的功率不足的情况下，也可以发送和接收个别信息。 提供电池（也称为二次电池）作为向RFID提供电力的电源。 然后，当从外部接收的信号获得的功率大于预定功率时，其剩余功率被存储在电池中; 并且当从外部接收的信号获得的功率小于预定功率时，从电池获得的功率用于驱动电力。

公开(公告)号：US08570065B2

公开(公告)日：2013-10-29

申请号：US13437961

申请日：2012-04-03

申请人： Hidetomo Kobayashi ,  Masami Endo ,  Yutaka Shionoiri ,  Hiroki Dembo ,  Tatsuji Nishijima ,  Kazuaki Ohshima ,  Seiichi Yoneda ,  Jun Koyama

发明人： Hidetomo Kobayashi ,  Masami Endo ,  Yutaka Shionoiri ,  Hiroki Dembo ,  Tatsuji Nishijima ,  Kazuaki Ohshima ,  Seiichi Yoneda ,  Jun Koyama

IPC分类号： H03K19/177 ,  G11C11/24

CPC分类号： H03K19/17796 ,  G11C16/0433 ,  H01L27/11803 ,  H01L27/1203

摘要： A low-power programmable LSI that can perform dynamic configuration is provided. The programmable LSI includes a plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic processing and changes an electrical connection between the logic elements, in accordance with the configuration data stored in the configuration memory. The configuration memory includes a set of a volatile storage circuit and a nonvolatile storage circuit. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer and a capacitor whose one of a pair of electrodes is electrically connected to a node that is set in a floating state when the transistor is turned off.

摘要翻译： 提供了可以执行动态配置的低功耗可编程LSI。 可编程LSI包括多个逻辑元件。 多个逻辑元件各自包括配置存储器。 多个逻辑元件中的每一个执行不同的运算处理，并且根据存储在配置存储器中的配置数据改变逻辑元件之间的电连接。 配置存储器包括一组易失性存储电路和非易失性存储电路。 非易失性存储电路包括其沟道形成在氧化物半导体层中的晶体管和一对电极中的一个电极与晶体管截止时被设置为浮置状态的节点电连接的电容器。

公开(公告)号：US08525585B2

公开(公告)日：2013-09-03

申请号：US13558694

申请日：2012-07-26

申请人： Takanori Matsuzaki ,  Yutaka Shionoiri

发明人： Takanori Matsuzaki ,  Yutaka Shionoiri

IPC分类号： H03D1/00

CPC分类号： H03D1/18 ,  H01L27/1225

摘要： An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received.

公开(公告)号：US08331873B2

公开(公告)日：2012-12-11

申请号：US12073615

申请日：2008-03-07

申请人： Yutaka Shionoiri

发明人： Yutaka Shionoiri

IPC分类号： H04Q7/00 ,  H04B1/38

CPC分类号： G06K19/0723 ,  G06K19/0701 ,  G06K19/0715

摘要： In a semiconductor device which can perform data communication through wireless communication, to suppress transmission and the like of an AC signal, the semiconductor device includes an input circuit to which a radio signal is input, a first circuit, which generates a constant voltage, such as a constant voltage circuit or a limiter circuit, a second circuit to which the generated constant voltage is input and which can change impedance of the semiconductor device, and a filter provided between the first circuit and the second circuit. Transmission of an AC signal is suppressed by the filter, and malfunctions or operation defects such as complete inoperative due to variation in the constant voltage is prevented.

摘要翻译： 在能够通过无线通信进行数据通信的半导体装置中，为了抑制交流信号的发送等，半导体装置具备输入无线信号的输入电路，产生恒定电压的第一电路， 作为恒压电路或限幅电路，输入所产生的恒定电压并能够改变半导体器件的阻抗的第二电路以及设置在第一电路和第二电路之间的滤波器。 通过滤波器抑制AC信号的传输，并且防止由于恒定电压的变化而导致的故障或诸如完全不工作的操作缺陷。

公开(公告)号：US08232880B2

公开(公告)日：2012-07-31

申请号：US11716018

申请日：2007-03-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

IPC分类号： G08B13/14

CPC分类号： H01Q1/2225 ,  G06K19/0701 ,  G06K19/0702 ,  G06K19/0723 ,  G06K19/07767

摘要： The present invention provides a battery as a power supply for supplying power in the RFID, and another antenna for charging the battery, in addition to an antenna which transmits and receives individual information to and from outside as a means for supplying power to the battery.

摘要翻译： 本发明提供一种作为用于在RFID中供电的电源的电池，以及用于对电池充电的另一个天线，以及向外部发送和接收个人信息的天线作为向电池供电的装置。

公开(公告)号：US08207756B2

公开(公告)日：2012-06-26

申请号：US12912397

申请日：2010-10-26

申请人： Yutaka Shionoiri ,  Hidetomo Kobayashi

发明人： Yutaka Shionoiri ,  Hidetomo Kobayashi

IPC分类号： H03K19/096

CPC分类号： H01L29/7869 ,  H01L27/088 ,  H01L27/1225 ,  H03K3/0375 ,  H03K19/0016 ,  H03K19/096

摘要： In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×1019 (atoms/cm3) or lower. Thus, leakage current of the transistor can be reduced. As a result, in the logic circuit, reduction in standby power and suppression of malfunction can be achieved.

摘要翻译： 在执行时钟门控的逻辑电路中，待机功率降低或故障被抑制。 该逻辑电路包括在不提供时钟信号的时段内处于源极端子和漏极端子之间存在电位差的关断状态的晶体管。 使用其中氢浓度降低的氧化物半导体形成晶体管的沟道形成区域。 具体地说，氧化物半导体的氢浓度为5×1019（原子/ cm3）以下。 因此，可以减小晶体管的漏电流。 结果，在逻辑电路中，可以实现待机功率的降低和故障的抑制。