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191 条记录 (耗时 0.027 秒)

    Hollow assembly structure and fabrication method therefor
    1.
    发明授权
    Hollow assembly structure and fabrication method therefor 有权
    中空组装结构及其制造方法

    公开(公告)号：US07500640B2

    公开(公告)日：2009-03-10

    申请号：US11026086

    申请日：2005-01-03

    申请人： Yutaka Tanaka ,  Haruhiko Kakimoto

    发明人： Yutaka Tanaka ,  Haruhiko Kakimoto

    IPC分类号： B64C3/26

    CPC分类号： B64C3/26 ,  B23K20/122 ,  B23K20/1265 ,  B64C1/12 ,  B64C27/473

    摘要： A movable trailing edge is composed of a main body including a structural frame member in which a spar and a rib intersect with each other, and a first outer plate that covers the main body. The first outer plate is placed on and cover the structural frame member, a rotating probe is pressed against the first outer plate from the obverse side thereof to friction stir weld the first outer plate and the side end face of the structural frame member. Joint parts are arranged in a dotted pattern.

    摘要翻译： 可动后缘由包括翼梁和肋骨彼此相交的结构框架构件的主体和覆盖主体的第一外板构成。 第一外板被放置在覆盖结构框架构件上的情况下，旋转探头从其正面压靠第一外板，摩擦搅拌焊接第一外板和结构框架构件的侧端面。 联合部件以点状图案排列。

    GLOW PLUG, NEW GLOW PLUG DETERMINATION METHOD, AND GLOW PLUG DRIVING CONTROL DEVICE
    4.
    发明申请
    GLOW PLUG, NEW GLOW PLUG DETERMINATION METHOD, AND GLOW PLUG DRIVING CONTROL DEVICE 有权
    GLOW PLUG，新GLOW PLUG确定方法和GLOW PLUG驱动控制装置

    公开(公告)号：US20140096733A1

    公开(公告)日：2014-04-10

    申请号：US14118918

    申请日：2012-05-14

    申请人： Tomohiro Nakamura ,  Yutaka Tanaka ,  Yoshihito Fujishiro ,  Yasuo Toyoshima

    发明人： Tomohiro Nakamura ,  Yutaka Tanaka ,  Yoshihito Fujishiro ,  Yasuo Toyoshima

    IPC分类号： F02P19/02

    CPC分类号： F02P19/02 ,  F02D41/266 ,  F02D2041/2058 ,  F02P19/027 ,  F23Q7/001

    摘要： There is provided a new glow plug that can be easily determined as to whether or not it is a new article.An additional circuit 12 formed by connecting a diode 13, a fuse 14, and an adjusting resistor 15 in series in this order is connected in parallel to a heating element 11 of a glow plug 1. The diode 13 is provided so as to have an anode located on the positive electrode side of the heating element 11 and a cathode located on the fuse 14 side. In the case of a unit inspection, by applying a positive voltage for test to a heating element negative electrode connecting portion 3a, it is possible to determine whether or not the glow plug 1 is normal without blowing the fuse 14 before the glow plug 1 is used in a vehicle.

    摘要翻译： 提供了一个新的电热塞，可以很容易地确定它是否是一个新的文章。 依次连接二极管13，熔断器14和调节电阻器15而构成的附加电路12与电热塞1的加热元件11并联连接。二极管13设置成具有 位于加热元件11的正极侧的阳极和位于保险丝14侧的阴极。 在单元检查的情况下，通过向加热元件负极连接部3a施加正电压进行测试，可以在电热塞1为止之前先吹出保险丝14来判断电热塞1是否正常 用于车辆。

    GLOW PLUG CONTROL DRIVE METHOD AND GLOW PLUG DRIVE CONTROL SYSTEM
    5.
    发明申请
    GLOW PLUG CONTROL DRIVE METHOD AND GLOW PLUG DRIVE CONTROL SYSTEM 有权
    GLOW插头控制驱动方法和GLOW PLUG驱动控制系统

    公开(公告)号：US20130255615A1

    公开(公告)日：2013-10-03

    申请号：US13993165

    申请日：2011-12-06

    申请人： Yoshito Hujishiro ,  Yutaka Tanaka ,  Tomohiro Nakamura

    发明人： Yoshito Hujishiro ,  Yutaka Tanaka ,  Tomohiro Nakamura

    IPC分类号： F02P23/00

    CPC分类号： F02P23/00 ,  F02D2041/2027 ,  F02P19/02 ,  F02P19/022 ,  F02P19/023 ,  F02P19/026 ,  F23Q7/001

    摘要： To suppress current fluctuations upon commencement of driving and prolong lifespan by reducing electric stress caused by current fluctuations.A glow plug 1, a glow switch 2, and a stabilizing coil 3 are series-connected, and upon commencement of the driving of the glow plug 1, a repetition frequency of PWM signals that control the opening and closing of the glow switch 2 is made into a higher frequency than a repetition frequency in a normal drive state and the opening and closing of the glow switch 2 is controlled (S104), and when a predetermined drive shift condition has been met (S106), the repetition frequency of the PWM signals is returned to the frequency during normal driving and the opening and closing of the glow switch 2 is controlled (S108), whereby the current upon commencement of driving is smoothed and the occurrence of an instantaneous large current is suppressed.

    摘要翻译： 为了抑制驱动开始时的电流波动，通过减少由电流波动引起的电应力来延长寿命。 电热塞1，辉光开关2和稳定线圈3是串联的，并且在电热塞1的驱动开始时，控制辉光开关2的打开和关闭的PWM信号的重复频率是 在正常驱动状态下被制成比重复频率高的频率，并且控制辉光开关2的打开和关闭（S104），并且当满足预定的驱动移位条件（S106）时，PWM的重复频率 信号在正常驱动期间返回到频率，并且控制辉光开关2的打开和关闭（S108），从而驱动开始时的电流平滑，并且抑制了瞬时大电流的发生。

    Semiconductor memory device
    6.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US08159852B2

    公开(公告)日：2012-04-17

    申请号：US12398839

    申请日：2009-03-05

    申请人： Toshiyuki Kouchi ,  Yutaka Tanaka

    发明人： Toshiyuki Kouchi ,  Yutaka Tanaka

    IPC分类号： G11C5/02

    CPC分类号： G11C8/16 ,  G11C11/412

    摘要： A semiconductor memory device includes first and second driving transistors; first and second load transistors; and first and second transmission transistors. Their respective drain diffusion layers of the transistors are isolated from one another. The semiconductor memory device also includes a bit cell in which the first and second driving transistors, the first and second load transistors, and the first and second transmission transistors are arranged; a first wiring for connecting their respective drains of the first driving transistor, the first load transistor, and the first transmission transistor; and a second wiring for connecting their respective drains of the second driving transistor, the second load transistor, and the second transmission transistor.

    摘要翻译： 半导体存储器件包括第一和第二驱动晶体管; 第一和第二负载晶体管; 以及第一和第二传输晶体管。 它们各自的漏极扩散层彼此隔离。 半导体存储器件还包括其中布置第一和第二驱动晶体管，第一和第二负载晶体管以及第一和第二传输晶体管的位单元; 用于连接第一驱动晶体管，第一负载晶体管和第一透射晶体管的各自的漏极的第一布线; 以及用于连接其第二驱动晶体管，第二负载晶体管和第二传输晶体管的各自的漏极的第二布线。

    SEMICONDUCTOR MEMORY DEVICE
    7.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权
    半导体存储器件

    公开(公告)号：US20090268499A1

    公开(公告)日：2009-10-29

    申请号：US12398839

    申请日：2009-03-05

    申请人： Toshiyuki Kouchi ,  Yutaka Tanaka

    发明人： Toshiyuki Kouchi ,  Yutaka Tanaka

    IPC分类号： G11C5/02 ,  G11C5/06 ,  G11C8/16

    CPC分类号： G11C8/16 ,  G11C11/412

    摘要： A semiconductor memory device includes first and second driving transistors; first and second load transistors; and first and second transmission transistors. Their respective drain diffusion layers of the transistors are isolated from one another. The semiconductor memory device also includes a bit cell in which the first and second driving transistors, the first and second load transistors, and the first and second transmission transistors are arranged; a first wiring for connecting their respective drains of the first driving transistor, the first load transistor, and the first transmission transistor; and a second wiring for connecting their respective drains of the second driving transistor, the second load transistor, and the second transmission transistor.

    摘要翻译： 半导体存储器件包括第一和第二驱动晶体管; 第一和第二负载晶体管; 以及第一和第二传输晶体管。 它们各自的漏极扩散层彼此隔离。 半导体存储器件还包括其中布置第一和第二驱动晶体管，第一和第二负载晶体管以及第一和第二传输晶体管的位单元; 用于连接第一驱动晶体管，第一负载晶体管和第一透射晶体管的各自的漏极的第一布线; 以及用于连接其第二驱动晶体管，第二负载晶体管和第二传输晶体管的各自的漏极的第二布线。

    Exposure apparatus with tanks storing helium gas and method of manufacturing device using exposure apparatus
    8.
    发明授权
    Exposure apparatus with tanks storing helium gas and method of manufacturing device using exposure apparatus 失效
    带有储存氦气的储罐的曝光装置和使用曝光装置的制造装置的方法

    公开(公告)号：US07566422B2

    公开(公告)日：2009-07-28

    申请号：US11201142

    申请日：2005-08-11

    申请人： Shinichi Hara ,  Yutaka Tanaka ,  Shigeru Terashima ,  Takayuki Hasegawa ,  Shin Matsui

    发明人： Shinichi Hara ,  Yutaka Tanaka ,  Shigeru Terashima ,  Takayuki Hasegawa ,  Shin Matsui

    IPC分类号： G05D16/00 ,  C23C14/00

    CPC分类号： G05D16/2013

    摘要： A processing apparatus includes a sealed vacuum chamber which contains a processing portion; a pressure controlling system which keeps the internal pressure of the sealed vacuum chamber constant at a predetermined level by exhausting the ambient gas in the sealed vacuum chamber; and an ambient gas recirculating system which recirculates the ambient gas exhausted from the sealed vacuum chamber back into the sealed vacuum chamber; wherein the ambient as recirculated by the ambient gas recirculating system is blown into the sealed vacuum chamber so that a gas flow is generated in a predetermined direction along the processing portion.

    摘要翻译： 一种处理装置，包括：密封真空室，其包含处理部分; 压力控制系统，通过排出密封真空室中的环境气体来保持密封真空室的内部压力恒定在预定水平; 以及环境气体循环系统，其将从密封的真空室排出的环境气体再循环回密封的真空室中; 其中由环境气体再循环系统再循环的环境被吹入密封的真空室中，使得沿着处理部分沿预定方向产生气流。

    Fuse-data reading circuit
    10.
    发明申请
    Fuse-data reading circuit 失效
    保险丝数据读取电路

    公开(公告)号：US20050280495A1

    公开(公告)日：2005-12-22

    申请号：US11138712

    申请日：2005-05-25

    申请人： Toshiaki Douzaka ,  Shigeyuki Hayakawa ,  Yutaka Tanaka ,  Tsuyoshi Midorikawa

    发明人： Toshiaki Douzaka ,  Shigeyuki Hayakawa ,  Yutaka Tanaka ,  Tsuyoshi Midorikawa

    IPC分类号： G11C17/18 ,  H01H85/04

    CPC分类号： G11C29/027 ,  G11C17/18

    摘要： A fuse-data reading circuit is provided in a semiconductor integrated circuit device. In the fused-data reading circuit, a differential latch circuit compares a current depending on the resistance across a first fuse element, i.e., target element, with a current depending on the resistance of a series circuit including a second fuse element used as a reference fuse element and a resistor element. The differential latch circuit determines whether the first fuse element has been cut or not.

    摘要翻译： 熔丝数据读取电路设置在半导体集成电路器件中。 在熔融数据读取电路中，差分锁存电路将依赖于第一熔丝元件（即目标元件）的电阻的电流与取决于串联电路的电阻的电流进行比较，该串联电路包括用作基准的第二熔丝元件 熔丝元件和电阻元件。 差分锁存电路确定第一熔丝元件是否已被切割。