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    Magnetoresistance effect element
    1.
    发明授权
    Magnetoresistance effect element 有权
    磁阻效应元件

    公开(公告)号：US6111729A

    公开(公告)日：2000-08-29

    申请号：US313767

    申请日：1999-05-18

    申请人： Yuzo Kamiguchi ,  Akiko Saito ,  Kazuhiro Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Akiko Saito ,  Kazuhiro Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/00 ,  G11B5/3967

    摘要： A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the metallic buffer layer and the first magnetic layer. Or a magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer composed of a laminated film of a magnetic undercoat layer and a ferromagnetic layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the middle non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the magnetic undercoat layer and the ferromagnetic layer.

    摘要翻译： 设置有由形成在金属缓冲层上的第一磁性层，形成在第一磁性层上的中间非磁性层和形成在非磁性层上的第二磁性层构成的自旋阀膜的磁阻效应元件具有 在金属缓冲层和第一磁性层之间的界面形成平均厚度为2nm以下的原子扩散阻挡层。 或设置有由由磁性底涂层和铁磁层的层叠膜构成的第一磁性层，形成在第一磁性层上的中间非磁性层和第二磁性层构成的自旋阀膜的磁阻效应元件 在中间非磁性层上形成的平均厚度为2nm以下的原子扩散阻挡层形成在磁性底涂层和铁磁层之间的界面中。

    Magneto-resistance effect element and magnetic head
    3.
    发明授权
    Magneto-resistance effect element and magnetic head 失效
    磁阻效应元件和磁头

    公开(公告)号：US6052262A

    公开(公告)日：2000-04-18

    申请号：US38848

    申请日：1998-03-12

    申请人： Yuzo Kamiguchi ,  Akiko Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Akiko Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/012 ,  G11B5/39 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/012

    摘要： A magneto-resistance effect element comprising a spin valve film including a first magnetic layer, a second magnetic layer and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer. Among the first and the second magnetic layers, in at least one of the magnetic layers, close-packed faces of crystal grains which constitute the magnetic layer are isotropically dispersed. Such a magnetic layer, by setting a film thickness of an under layer having an identical crystal structure with the magnetic layer at 2.0 nm or less and by dispersing isotropically close-packed faces of crystal grains constituting the under layer, can be obtained with reproducibility. According to a magneto-resistance effect element comprising such a spin valve film, while maintaining a large MR change rate, for example, magnetostriction constant can satisfy such a low magnetostriction as 1.times.10.sup.-6 or less. Further, excellent soft magnetic property can be provided.

    摘要翻译： 一种磁电阻效应元件，包括自旋阀膜，该自旋阀膜包括介于第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和非磁性层。 在第一和第二磁性层中，在至少一个磁性层中，构成磁性层的晶粒的紧密堆积面各向同性地分散。 通过将具有与磁性层相同的晶体结构的下层的膜厚设定为2.0nm以下，通过使构成下层的晶粒的各向同性紧密堆积面分散，可以得到这样的磁性层。 根据包含这种自旋阀膜的磁阻效应元件，在保持大的MR变化率的同时，例如，磁致伸缩常数可满足1×10 -6以下的低磁致伸缩性。 此外，可以提供优异的软磁性。