公开(公告)号：US06813534B2

公开(公告)日：2004-11-02

申请号：US10081088

申请日：2002-02-20

申请人： Zhifeng Sui ,  Paul E Luscher ,  Nils Johansson ,  Michael D Welch

发明人： Zhifeng Sui ,  Paul E Luscher ,  Nils Johansson ,  Michael D Welch

IPC分类号： G06F1900

CPC分类号： H01L21/67253 ,  H01J37/32935 ,  H01J37/32963

摘要： In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position. The endpoint signal is determined to be true or false by evaluating the process parameter.

摘要翻译： 在具有通电气体的基板处理室中执行的处理的端点检测方法中，检测该处理的过程变量。 所述过程变量包括以下中的至少一个：（i）由所述通电气体发射的辐射，（ii）从所述室中的衬底反射的辐射，（iii）所述通电气体的反射功率水平，以及（iv） 在房间里 当过程变量指示过程的终点时，发出端点信号。 还检测该过程的过程参数，该过程参数包括以下中的至少一个：（i）源功率，（ii）RF正向功率，反射功率或匹配分量，（iii）RF峰 - 峰 电压，电流或相位，（iv）DC偏置电平，（v）腔室压力或节流阀位置，（vi）气体组成或流速，（vii）衬底温度或组成，（viii） 腔室部件或壁，以及（ix）磁限制水平或磁体位置。 通过评估过程参数将端点信号确定为真或假。

公开(公告)号：US06716302B2

公开(公告)日：2004-04-06

申请号：US10253496

申请日：2002-09-24

申请人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

发明人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

IPC分类号： H05H100

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

摘要翻译： 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US06797639B2

公开(公告)日：2004-09-28

申请号：US10254969

申请日：2002-09-24

申请人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

发明人： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

IPC分类号： H01L2100

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

公开(公告)号：US06589361B2

公开(公告)日：2003-07-08

申请号：US09882132

申请日：2001-06-15

申请人： Paul E Luscher ,  James D Carducci ,  Siamak Salimian

发明人： Paul E Luscher ,  James D Carducci ,  Siamak Salimian

IPC分类号： B08B700

CPC分类号： H01L21/67017 ,  B08B3/04 ,  H01L21/67028 ,  Y10S134/902

摘要： The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes an upper plate, a lower plate and a gas manifold disposed there between. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce rotation of the substrate during a cleaning and drying process. A cleaning process involves flowing one or more fluids onto a surface of the substrate during its rotation. One-sided and two-sided cleaning and drying is provided.