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    Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers
    2.
    发明授权
    Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers 有权
    制造包括外延Hf 3 Si 2层的半导体结构的方法

    公开(公告)号：US06852588B1

    公开(公告)日：2005-02-08

    申请号：US10883181

    申请日：2004-06-30

    申请人： Zhiyi Yu ,  Jay A. Curless ,  Yong Liang

    发明人： Zhiyi Yu ,  Jay A. Curless ,  Yong Liang

    IPC分类号： H01L21/285 ,  H01L21/8242

    CPC分类号： H01L21/28518

    摘要： Methods are provided for fabricating semiconductor structures and semiconductor device structures utilizing epitaxial Hf3Si2 layers. A process in accordance with one embodiment of the invention begins by disposing a silicon substrate in a processing chamber. The pressure within the processing chamber and a temperature of the silicon substrate in the range of approximately 250° C. to approximately 700° C. is established. A layer of Hf3Si2 then is grown overlying the silicon substrate at a rate in the range of about one (1) to about five (5) monolayers per minute.

    摘要翻译： 提供了用于制造使用外延Hf 3 Si 2层的半导体结构和半导体器件结构的方法。 根据本发明的一个实施例的方法开始于将硅衬底设置在处理室中。 处理室内的压力和硅衬底的温度在大约250℃至大约700℃的范围内。 然后以约1（1）至约5（5）单层/分钟的速率在硅衬底上生长一层Hf 3 Si 2。

    Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof
    4.
    发明申请
    Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof 有权
    半导体结构和制造半导体结构的方法包括用镧，镧系金属或其组合改性的氧化铪

    公开(公告)号：US20060003602A1

    公开(公告)日：2006-01-05

    申请号：US10883180

    申请日：2004-06-30

    申请人： Zhiyi Yu ,  Jay Curless ,  Yong Liang

    发明人： Zhiyi Yu ,  Jay Curless ,  Yong Liang

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02181 ,  C23C14/0026 ,  C23C14/083 ,  H01L21/02192 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/3115 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517

    摘要： Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnOx, where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.

    摘要翻译： 提供半导体结构和制造半导体结构的方法，其包括用氧化镧或镧系金属氧化物改性的氧化铪层。 根据本发明的实施例的半导体结构包括覆盖在衬底上的氧化铪的非晶层。 含镧掺杂剂或含镧系金属的掺杂剂包含在氧化铪的非晶层内。 该方法包括在衬底上生长氧化铪的非晶层。 氧化铪的非晶层掺杂有具有化学配方LnO x x的掺杂剂，其中Ln是镧，镧系金属或其组合，X是大于零的任何数。 掺杂步骤可以在氧化铪的非晶层生长期间或之后进行。

    Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
    7.
    发明授权
    Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process 失效
    使用低温，低压，富碱土金属的方法在邻位衬底上制造半导体结构的方法

    公开(公告)号：US07169619B2

    公开(公告)日：2007-01-30

    申请号：US10299246

    申请日：2002-11-19

    申请人： Yong Liang ,  Ravindranath Droopad ,  Xiaoming Hu ,  Jun Wang ,  Yi Wei ,  Zhiyi Yu

    发明人： Yong Liang ,  Ravindranath Droopad ,  Xiaoming Hu ,  Jun Wang ,  Yi Wei ,  Zhiyi Yu

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02197 ,  C30B23/02 ,  C30B29/24 ,  H01L21/02293 ,  H01L21/31604 ,  H01L21/31691

    摘要： High quality epitaxial layers of monocrystalline oxide materials (24) can be grown overlying monocrystalline substrates (22) such as large silicon wafers. The monocrystalline oxide layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.

    摘要翻译： 单晶氧化物材料（24）的高质量外延层可以生长在覆盖单晶衬底（22）如大硅晶片上。 单晶氧化物层（24）包括通过氧化硅的非晶界面层（28）与硅晶片间隔开的单晶氧化物层。 非晶界面层用作衬底和缓冲层之间的去耦层，使得衬底和缓冲器是晶体图，化学和介电解耦的。 此外，可以使用低压，低温，富碱土金属的工艺在邻近衬底上形成高质量的外延容纳缓冲层。

    Method for fabricating a semiconductor structure including a metal oxide interface with silicon
    8.
    发明授权
    Method for fabricating a semiconductor structure including a metal oxide interface with silicon 失效
    包括与硅的金属氧化物界面的半导体结构的方法

    公开(公告)号：US06709989B2

    公开(公告)日：2004-03-23

    申请号：US09885409

    申请日：2001-06-21

    申请人： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

    发明人： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

    IPC分类号： H01L2100

    CPC分类号： H01L21/3141 ,  H01L21/02172 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/316 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/31691

    摘要： A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monocrystalline high dielectric constant oxide on the seed layer, where providing a substrate includes providing a substrate having formed thereon a silicon oxide, and wherein forming by atomic layer deposition a seed layer further includes depositing a layer of a metal oxide onto a surface of the silicon oxide, flushing the layer of metal oxide with an inert gas, and reacting the metal oxide and the silicon oxide to form a monocrystalline silicate.

    摘要翻译： 一种制造半导体结构的方法，包括以下步骤：提供具有表面的硅衬底;通过原子层沉积在硅衬底的表面上形成单晶种子层; 并且通过原子层沉积形成在种子层上的单晶高介电常数氧化物的一层或多层，其中提供衬底包括提供其上形成有氧化硅的衬底，并且其中通过原子层沉积形成晶种层还包括沉积 在氧化硅表面上的金属氧化物层，用惰性气体冲洗金属氧化物层，并使金属氧化物和氧化硅反应形成单晶硅酸盐。

    Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
    9.
    发明授权
    Method for fabricating a semiconductor structure having a stable crystalline interface with silicon 有权
    制造具有与硅稳定的结晶界面的半导体结构的方法

    公开(公告)号：US06291319B1

    公开(公告)日：2001-09-18

    申请号：US09465622

    申请日：1999-12-17

    申请人： Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Jamal Ramdani

    发明人： Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Jamal Ramdani

    IPC分类号： H01L2120

    CPC分类号： H01L21/318 ,  C30B23/02 ,  C30B29/16 ,  C30B29/32 ,  H01L21/3144 ,  H01L21/31691 ,  H01L28/56

    摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, nitrogen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−Ox]2, where M is a metal and X is 0≦X

    摘要翻译： 一种制造半导体结构的方法包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底的表面上形成包含硅，氮和金属的单原子层的界面（14）; 以及在界面上形成一层或多层单晶氧化物（26）。 该界面包括硅，氮和MSiN 2形式的金属的原子层，其中M是金属。 在第二个实施方案中，界面包括形式为MSi [N1-Ox] 2的硅，金属以及氮和氧的混合物的原子层，其中M是金属，X是0 <= X <1。

    Method for fabricating a semiconductor structure with reduced leakage current density
    10.
    发明授权
    Method for fabricating a semiconductor structure with reduced leakage current density 有权
    制造漏电流密度降低的半导体结构的方法

    公开(公告)号：US06270568B1

    公开(公告)日：2001-08-07

    申请号：US09354173

    申请日：1999-07-15

    申请人： Ravindranath Droopad ,  Zhiyi Yu ,  Jamal Ramdani

    发明人： Ravindranath Droopad ,  Zhiyi Yu ,  Jamal Ramdani

    IPC分类号： C30B100

    CPC分类号： H01L28/56 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/31691

    摘要： A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (22) on the buffer layer (20) utilizing activated oxygen.

    摘要翻译： 一种制造半导体结构的方法，包括以下步骤：提供具有表面（12）的硅衬底（10）; 形成包括与所述硅衬底（10）的所述表面（12）相邻的晶种层（18）的界面，使用分子氧形成缓冲层（20）; 以及使用活性氧在缓冲层（20）上形成一层或多层高介电常数氧化物（22）。